BCX54
BCX55
BCX56
SURFACE MOUNT
NPN SILICON TRANSISTOR
DESCRIPTION:
The CENTRAL SEMICONDUCTOR BCX54, BCX55,
and BCX56 types are NPN Silicon Transistors
manufactured by the epitaxial planar process, epoxy
molded in a surface mount package, designed for high
current general purpose amplifier applications.
MARKING CODE: SEE MARKING CODE TABLE
ON FOLLOWING PAGE
MAXIMUM RATINGS: (TA=25°C) SYMBOL BCX54 BCX55 BCX56 UNITS
Collector-Base Voltage VCBO 45 60 100 V
Collector-Emitter Voltage VCEO 45 60 80 V
Emitter-Base Voltage VEBO 5.0 V
Continuous Collector Current IC 1.0 A
Peak Collector Current ICM 1.5 A
Continuous Base Current IB 100 mA
Peak Base Current IBM 200 mA
Power Dissipation PD 1.3 W
Operating and Storage Junction Temperature TJ, Tstg -65 to +150 °C
Thermal Resistance ΘJA 96 °C/W
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
ICBO V
CB=30V 100 nA
ICBO V
CB=30V, TA=125°C 10 µA
IEBO V
EB=5.0V 100 nA
BVCBO I
C=100µA (BCX54) 45 V
BVCBO I
C=100µA (BCX55) 60 V
BVCBO I
C=100µA (BCX56) 100 V
BVCEO I
C=10mA (BCX54) 45 V
BVCEO I
C=10mA (BCX55) 60 V
BVCEO I
C=10mA (BCX56) 80 V
VCE(SAT) I
C=500mA, IB=50mA 0.5 V
VBE(ON) V
CE=2.0V, IC=500mA 1.0 V
hFE V
CE=2.0V, IC=5.0mA 40
hFE V
CE=2.0V, IC=150mA 63 250
hFE V
CE=2.0V, IC=150mA
(BCX54-10, BCX55-10, BCX56-10) 63 160
hFE V
CE=2.0V, IC=150mA
(BCX54-16, BCX55-16, BCX56-16) 100 250
hFE V
CE=2.0V, IC=500mA 25
fT V
CE=5.0V, IC=10mA, f=100MHz 130 MHz
SOT-89 CASE
R5 (20-November 2009)
www.centralsemi.com