Infineon BUZ 111SL technologies SIPMOS Power Transistor Features Product Summary Nchannel Drain source voltage Vos 55 |V Enhancement mode Drain-Source on-state resistance | Angony|{ 9.007 | Q Avalanche rated Continuous drain current b 80 |A * Logic Level e dv/dt rated e 175C operating temperature VPTOS 164 Type Package Ordering Code Packaging Pin 1 | Pin 2 | Pin3 BUZ111SL P-T0220-3-1 | Q67040-S4002-A2 | Tube G D s BUZ111SL E3045A | P-TO263-3-2 | Q67040-S4002-A6 | Tape and Reel BUZ111SL E3045 P-T0263-3-2 | Q67040-S4002-A5 | Tube Maximum Ratings, at 7; = 25 C, unless otherwise specified Parameter Symbol Value Unit Continuous drain current Ip A To = 25C, 1) 80 To = 100 C 80 Pulsed drain current pulse 320 Te = 25C Avalanche energy, single pulse Eas 700 mJ Ip = 80 A, Vpp = 25 V, Rag = 25 Avalanche energy, periodic limited by Timax Ear 30 Reverse diode dwdt dwdt 6 kV/us Ig = 80 A, Vos = 40 V, di/dt = 200 Aus, Timax = 175 C . Gate source voltage Ves +20 V Power dissipation Prot 300 W To = 25C Operating and storage temperature Tj. Teta -55... +175 Cc IEC climatic category; DIN IEC 68-1 55/175/56 MM 8235605 0133456 4St Data Book 734 06.99Infineon BUZ 111SL technologies Thermal Characteristics Parameter Symbol Values Unit min. | typ. | max. Characteristics Thermal resistance, junction - case Rinuc - - 0.5 | KW Thermal resistance, junction - ambient, leded Rind - - 62 SMD version, device on PCB: Rind @ min. footprint - - 62 @ 6 cm? cooling area?) - - 40 Electrical Characteristics, at 7; = 25 C, unless otherwise specified Parameter Symbol Values Unit min. | typ. max. Static Characteristics Drain- source breakdown voltage Vierypss 55 - - Vv Vas = OV, lp = 0.25 mA Gate threshold voltage, Vag = Vog Vescth) 1.2 | 1.6 2 Ip = 240 pA Zero gate voltage drain current loss pA Vos = 50 V, Vag = OV, 7) = 25C - 0.1 1 Vos = 50 V, Vag = OV, 7) = 150C - - 100 Gate-source leakage current . lass - 10 100 [nA Ves = 20 V, Vos =0V Drain-Source on-state resistance Foscon) Q Vag =4.5V, bb =80A - 0.0085] 0.01 Vag =10V, Ip =80A - 0.0059 0.007 Teurrent limited by bond wire 2 Device on 40mm*40mm"1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70m thick) copper area for drain connection. PCB is vertical without blown air. M@ 62355605 01355457? 352 Data Book 736 06.99Infineon BUZ 111SL technologies Electrical Characteristics, at T; = 25 C, unless otherwise specified Parameter Symbol Values Unit min. | typ. | max. Dynamic Characteristics Transconductance Dts 30 95 - (8 Vps22" lp Rpsion)max !p = 80 A Input capacitance Ciss - 3850 | 4800 | pF Vas =0V, Vpg = 25 V, f= 1 MHz Output capacitance Coss : 1090 | 1357 Veg = OV, Vos = 25 V, f= 1 MHz Reverse transfer capacitance Crs - 570 | 715 Vas = OV, Vos = 25 V, f= 1 MHz Turn-on delay time fa(on) - 30 45 |ns Vop = 30 V, Ves = 4.8 V, lp = 804A, Ag=1.32 Rise time t - 37 56 Vop = 30 V, Veg = 4.5 V, Ip = 804A, Agz1.32 Turn-off delay time facott) - 70 105 Vop = 30 V, Veg = 4.5 V, Ip = 80A, Agz1.3Q Fall time i - 36 55 Vop = 30 V, Veg = 4.5 V, lp = 80A, Ag=i3Q M@ 6235605 0133458 229 Data Book 736 06.99oe C Infineon BUZ 111SL technologies Electrical Characteristics, at T, = 25 C, unless otherwise specified Parameter Symbol Values Unit min. | typ. | max. Dynamic Characteristics Gate to source charge Qgs - 12 18 [nc Vop = 40 V, lp = 80A Gate to drain charge Qga - 61 91.5 Vop = 40 V, Ip = 80A Gate charge total Qg - 155 | 232 Vop = 40 V, Ip = 80 A, Vgg=0to 10 V Gate plateau voltage Viplateau) | - 3.4 - |v Vop = 40 V, Ip = 80A Reverse Diode Inverse diode continuous forward current Ig - - 80 JA To = 25C Inverse diode direct current,pulsed Ign - - 320 To = 25C Inverse diode forward voltage Vsp - 125 | 18 |V Veg =O0V, le = 160A Reverse recovery time tr - 105 | 157 |ns V_ = 30 V, Ip=lg , dig/dt = 100 A/us Reverse recovery charge Qn - 0.31 | 0.47 [pC Vp = 30 V, Ip=lg , dip/dt = 100 A/us MS 8235605 0333459 115 Data Book 737 06.99oo Infineon technologies BUZ 111SL Power Dissipation Prot = f(T) BUZ111SL 320 Ww 240 200 Prot 160 120 > 80 40 % 20 40 60 80 100 120 140 16C 190 To Safe operating area Ipn= f(Vps) parameter: D=0, Tp = 25C 103 BUz111SL 10 10 10 v 10 * Vos Data Book Drain current lp = F(Tc) parameter: Veg 2 10 V BUZ111SL 90 70 \ 60 N { \ * 20 10 % 20 40 60 80 100 120 140 16C 190 , Tc Transient thermal impedance Zinuc = f(b) parameter : D= /T 1 BUZI1ISL KW Hit oA LCT 4thc rin CO 10 LL CCITT TTI TTA ST 107 w* 10% 10% 10% 1% 8s 10 44 06.99 M@ 82355605 0133440 387Infineon technologies BUZ 111SL Typ. output characteristics Ip = f (Vos) parameter: f, = 80 us BUZITISL 190 = 300W 40 20 a %o 05 10 15 20 25 30 35 40 V 50 > Vos Typ. transfer characteristics /p= f (Vgs) parameter: f = 80 us Vos 2 2 x Ip X Ros(on)max 80 . A 'b 8 ~~] 7 / 10 7 qo 15 2.0 25 3.0 Vv 4.0 * Ves Data Book Typ. drain-source-on-resistance Fos(on) =f (Ip) parameter: Ves BUZITISL 0.024 Fisvon) 0.020 9.016 | 0.012 0.008 0.004 Yas VJ = boc die f g oh 1 ] k 4 30 35 40 45 60 55 6065 70 80 100 0.000 0 20 40 60 80 100 A 140 +- b Typ. forward transconductance Ss = Kip); T; = 25C Parameter: gf. 100 s 80 70 & 60 50 } 30 20 0 40 50 A 70 06.99 M8 62355605 0133461 413Infineon technologies BUZ 111SL Drain-source on-resistance Roson) = f(7)) parameter : ip = 80 A, Vag = 4.5 V BUZTHISL 0.034 Q -60 -20 20 60 100 140 "C 200 7 Typ. capacitances C=f(Vps) parameter: Vag =0 V, f= 1 MHz 106 pF 10? 0 10 20 v 40 *, Vos Data Book Gate threshold voltage Vasithy = (7)) parameter: Vag = Vps, fp = 240 HA 30 v 24b, 22 2.0 Vasith) 18 1.65, 14 12 10 08 0.6 0.4 02 8 %0 -20 20 60 100 I a oat typ mn 140 "GC 200 Forward characteristics of reverse diode lz = f (Vgp) parameter: 7), tp = 80 us 10 3 BUZ111SL T,=25Ctyp T\= 175 C typ 7,= 25C (98%) T, = 175C (98%) 10 24 Vo 30 oo 04 08 12 #16 20 Vsp 06.99 MB 8235605 01334be 75T Infineon technologias Avalanche Energy Eqs = f(T) parameter: Ip = 80 A, Vpp = 25 V Res = 252 Eas A 750 \ \ an 450 y 300 ' 150 \ N en %o 40 60 80 100 120 140 C 180 Drain-source breakdown voltage Vierypss = f (7) Vierypss BUZITISL 66 Vv 56 52 60 -20 20 60 100 140 C 200 fT, Data Book 744 MS 6235605 0133443 96 BUZ 111SL Typ. gate charge Vas = f (Qaate) parameter: Ip puls = 80 A BUZIHISL 40 80 120 160 nO 240 ~ Qgate 06.99Infineon technologies Gehausemabbilder Package Outlines GehadusemaBbilder Package Outlines (MaBe in mm, wenn nicht anders angegeben) (Dimensions in mm, unless otherwise specified) P-DSO-6-6/-7 Gewicht etwa 0.1 5g 0:88 2008 x45" Approx. weight 0.15 g a . 02 z723 TT] =| Bo | es 214i a 2) nt Le rn. Op aa |! q ine 4 12 LU : | 0.64 10.25 8x | ae oe 4 A ! 6102 . 1 8 5 5 92 af 4 toon > Index Marking (Chamfer) 1) Does not include plastic or metal protrusion of 0.15 max. per side Bild 16 P-TO218-AA (P-TO218-2-1) Gewicht etwa 4.9 g Approx. weight 4.9 g yt Figure 16 15202 49 28M 13 |] 43 50's 2.5203 0.4 A 1) Punch direction, burr max. 0.04 2) Dip tinning 3) Max. 15.5 by dip tinning press burr max. 0.05 radii not dimensioned max, 0.2 GPT0S156 Bild 17 Data Book 1 Mi 4235605 Figure 17 055 06.99 0133774 1145- Infineon technologies Gehause maBbilder Package Outlines P-TO220-3-1 Gewicht etwa 1.8 g 10302 Approx. weight 1.8 g a a 44 4.27201 e 3 0.50.1 .) Typical All metal surfaces tin plated, except area of cut. GPTOS1S5 Bild 18 Figure 18 P-TO251-3-1 Gewicht etwa 2.0 g Approx. weight 2.0 g esis ats +9010 _[0.9%868 q 3x 0.75201 0.57088 456 GPTO9050 All metal surfaces tin plated, except area of cut. Bild 19 Data Book Figure 19 1056 MB 6235605 03433775 O50Infineon technologies GehausemaBbilder Package Outlines P-TO252-3-1. Gewicht etwa 0.38 g Approx. weight 0.38 g 101s 65-0346 2 3100s >A] _, | B4sot | 0.9808 : it q Rn L 2 s} ty = , J in 1 (| 0.15 max 3x s 0...0.15 per side 0.75 20.1 0.5 #008 1201 4.57 $10.25 @IAIB] fe] 0.1] All metal surfaces tin plated, except area of cut. GPT09051 Bild 20 Figure 20 P-T0262-3-1/P?PAK Ax04 | 3 rs 0.50.1 ") Typical Metal surface min. X = 7.25, = 7,35 All metal surfaces tin plated, except area of cut. GPTog244 Bild 21 Figure 21 Data Book 1057 06.99 @@ 8235605 0133776 11?Infineon GehausemaBbilder technologies Package Outlines P-T0263-3-2/DPAK Gewicht etwa 1.38 g 10202 44 Approx. weight 1.38 g 4.27401 " 24 f pe 015201 es max} [5.08] 1} Typical All metal surfaces tin plated, except area of cut. GPTo908S Bild 22 Figure 22 SOT-23 (P-SQT23-3-1) Gewicht etwa 0.01 9 Approx. weight 0.01 g 1.14max | 29201 0.1 max ~ at +02 * py ; -1- ace. to E ty | DINems 6B Bo _ Wy ab = {2 0.4530 j 0.08.0 15 0.95 . 2... 30 [0.25 @B/C| =10.20 @IAl GPS0S5S7 Bild 23 Figure 23 Data Book 1058 06.99 @ 8235605 0133777 12e3Infineon GehadusemaBbilder lechnologies Package Outlines SOT-89. Gewicht etwa 0.01 g Approx. weight 0.01 g ace. to 5 DIN 6784 D G D 0.25 min GPS05558 Bild 24 Figure 24 SOT-223 (P:SOT223-4-1) Gewicht etwa 0.15 g Approx. weight 0.15 g 6.5102 1.60.1 ais 3201 0.1 max -_ (eB) tL ee ie Yt a PX Is | oO ET aT of i, 07:01 [2.3] 0.28.04 10.25 @A] =10.25 @[8] GPS05560 Bild 25 Figure 25 Data Book 1059 06.99 M@@ 6235605 0133778 S&TGehausemaBbilder ( Infineon technologies Package Outlines TO-92 Gewicht etwa 0.23 g Approx. weight 0.23 g 1 2 3 Hil = i~ 4202 . 34 e w 2 a ~ 4 _ { 9.4 GPT05158 Bild 26 Figure 26 TO-92-E6288 Gewicht etwa 0.23 g Approx. weight 0.23 g \ 2 8 af chy = 4 5.2 92 4.292 x _ 4 x a 2 3 ' 3 2, = 0.4% GPT05548 Bild 27 Figure 27 Sorts of Packing Package outlines for tubes, trays etc. are contained in our Data Book Package Information. SMD = Surface Mounted Device Data Book 1060 06.99 MH 8235605 0133779 ?Tb =