INTEGRATED CIRCUITS DIVISION
ITC135P
Integrated Telecom Circuits
www.ixysic.com
DS-ITC135P_R06 1
Applications
Features
Description
Pin Configuration
This Integrated Telecom Circuit combines a single-pole,
normally open (1-Form-A) solid state relay, a bridge
rectifier, a Darlington transistor, an optocoupler, and
Zener diodes into one 16-pin SOIC package,
consolidating designs and reducing component count
in telecom applications.
The ITC135’s optocoupler provides for half-wave
detection of ringing signals.
• Data/Fax Modem
• Voice Mail Systems
• Telephone Sets
• Computer Telephony Integration
• Cable TV Modems
• 3750Vrms Input/Output Isolation
• FCC Compatible Part 68
• 2mW Hook Switch Drive Power (Logic Compatible)
• Full-Wave Bridge Rectifier
• Darlington Transistor for Electronic Inductor “Dry”
Circuits
• Half-Wave Current Detector for Ring Signal or Loop
Current Detect
• Includes Zener Diodes
• Board Space and Cost Savings
• No Moving Parts
• Small 16-Pin SOIC Package (PCMCIA Compatible)
• Tape & Reel Version Available
• JEDEC Standard Pin Out
Approvals
Ordering Information
• UL Recognized Component: File E76270
• CSA Certified Component: Certificate 1305490
• EN/IEC 60950-1 Certified Component:
TUV Certificate: B 12 11 82667 002
Parameter Rating Units
Relay Blocking Voltage 350 V
Relay Load Current 120 mArms / mADC
Relay On-Resistance (max) 15
Bridge Rectifier Reverse Voltage 100 V
Darlington Collector Current 120 mA
Darlington Current Gain 10,000 -
Part # Description
ITC135P 16-Pin SOIC (50/Tube)
ITC135PTR 16-Pin SOIC (1000/Reel)
PV
1
2
3
4
16
15
14
13
5
6
7
8
(N/C)
– LED - Form A Relay
– LED - Form A Relay
+ Zener Diode (cathode)
– Zener Diode (anode)
+ Zener Diode (cathode)
Collector - Phototransistor
Emitter - Phototransistor
Output Form A
Output Form A/Bridge Input –/+
Darlington Base
Darlington Emitter
Bridge Output +/Darlington Collector/
+ Zener Diode (cathode)
Bridge Output –/– Zener Diode (anode)
LED - Phototransistor (+)
LED - Phototransistor (–)
* Denotes reverse polarity protection diode;
half-wave detection only.
*
12
11
10
9
Switching Characteristics
of Normally Open Devices
Form-A
IF
ILOAD
10%
90%
ton toff
INTEGRATED CIRCUITS DIVISION
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2R06
ITC135P
Absolute Maximum Ratings @ 25ºC
Electrical Characteristics @ 25ºC: Relay Section
Total Power Dissipation (PD):
PD=PHOOKSWITCH + PBRIDGE + PDARLINGTON + PLED
PD=(RDS(on)) (I2
L) + 2(VF)(IL) + (VCE)(IL) + (VLED)(IF)
WHERE:
RDS(on) = Maximum relay on resistance
IL = Maximum loop current
VF = Maximum diode forward voltage
VCE = Maximum voltage collector to emitter
VLED = Maximum LED forward voltage
IF = Maximum LED current
Parameter Ratings Units
Input Control Current, Relay 50 mA
Input Control Current, Detector 100 mA
Total Package Dissipation 11W
Isolation Voltage, Input to Output 3750 Vrms
Operational Temperature -40 to +85 °C
Storage Temperature -40 to +125 °C
1 Derate linearly 8.33 mW / ºC
Parameter Conditions Symbol Min Typ Max Units
Output Characteristics
Blocking Voltage (Peak) - VL- - 350 VP
Load Current
Continuous - IL- - 120 mArms / mADC
Peak t=10ms ILPK - - 400 mAP
On-Resistance IL=120mA RON --15
Off-State Leakage Current VL=350V, TJ=25ºC ILEAK --1 A
Switching Speeds
Turn-On IF=5mA, VL=10V ton --3 ms
Turn-Off toff --3
Output Capacitance VL=50V, f=1MHz COUT -25 - pF
Input Characteristics
Input Control Current (to Activate) IL=120mA IF--5 mA
Input Voltage Drop IF=5mA VF0.9 1.2 1.4 V
Reverse Input Voltage - VR--5 V
Reverse Input Current VR=5V IR--10 A
Electrical Characteristics @25ºC: Darlington Transistor Section
Parameter Conditions Symbol Min Typ Max Units
Collector-Emitter Voltage IC=10mADC, IB=0mA VCEO 40 - - V
Collector Current, Continuous VC=3.5V IC- - 120 mA
Power Dissipation - PD- - 500 mW
Off-State Collector-Emitter Leakage Current VCE=10V, IB=0mA ICEX --1A
DC Current Gain VCE=10VDC, IC=120mA hFE 10,000 - - -
Saturation Voltage IC=120mA VCE(sat) - - 1.5 V
Total Harmonic Distortion IC=40mA, fO=300Hz @ -10dBm - - - -80 dB
Absolute Maximum Ratings are stress ratings. Stresses in
excess of these ratings can cause permanent damage to
the device. Functional operation of the device at conditions
beyond those indicated in the operational sections of this
data sheet is not implied.
INTEGRATED CIRCUITS DIVISION
ITC135P
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R06
EXAMPLE CIRCUIT
Parameter Conditions Symbol Min Typ Max Units
Output Characteristics
Phototransistor Blocking Voltage IC=10ABV
CEO 20 50 - V
Phototransistor Dark Current VCE=5V, IF=0mA ICEO - 50 500 nA
Saturation Voltage IF=16mA , IC=2mA VSAT - 0.3 0.5 V
Current Transfer Ratio IF=6mA, VCE=0.5V CTR 33 400 - %
Input Characteristics
Input Control Current IC=2mA, VCE=0.5V IF-26mA
Input Voltage Drop IF=5mA VF0.9 1.2 1.4 V
Input Current (Detector Must be Off) IC=1A, VCE=5V IF525 -A
Electrical Characteristics @25ºC: Detector Section
Parameter Conditions Symbol Min Typ Max Units
Reverse Voltage - VRD - - 100 V
Forward Voltage Drop IFD=120mA VFD - - 1.5 V
Reverse Leakage Current TJ=25ºC, VR=100V IRD
--10
A
TJ=85ºC - - 50
Forward Current
Continuous - IFD
- - 140 mA
Peak t=10ms - - 500
Electrical Characteristics @25ºC (Unless Otherwise Noted): Bridge Rectifier Section
Parameter Conditions Symbol Min Typ Max Units
Zener Voltage Between Pins 4&5 and Pins 6&5 IZT=20mA VZ- 4.3 - V
Zener Voltage Between Pins 12&11 IZT=20mA VZ-15 -V
Input to Output Capacitance - CI/O -3 -pF
Input to Output Isolation - VI/O 3750 - - Vrms
Electrical Characteristics @25ºC: Zener Diodes
MOSFET
DRIVER
CIRCUIT
4
1
3
2
7
8
6
5
16
15
14
13
12
11
10
9
DIGITAL
GROUND
ISOLATED
GROUND
CPU RING
OFF-HOOK
680
VCC
15V 4.7F
+
4.7F
+
51k
15
10F
25k
COUPLING
TRANSFORMER
RL
10
300V SURGE
PROTECTION
TELEPHONE
LINE
RING
18Vx 2 0.47F
250V
8.2k
V
CC
TIP
A
B
A
B
* Denotes reverse polarity protection diode;
half-wave detection only.
*
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4R06
ITC135P
* The Performance data shown in the graphs above is typical of device performance. For guaranteed parameters not indicated in the written specifications, please contact our application
department.
Typical LED Forward Voltage Drop
(N=50, IF=5mA, TA=25ºC)
35
30
25
20
15
10
5
0
1.17 1.19 1.21 1.23 1.25
LED Forward Voltage Drop (V)
Device Count (N)
Typical LED Forward Voltage Drop
vs. Temperature
Temperature (ºC)
LED Forward Voltage Drop (V)
1.8
1.6
1.4
1.2
1.0
0.8
-40 -20 0 20 40 60 80 120100
I
F
=50mA
I
F
=30mA
I
F
=20mA
I
F
=10mA
I
F
=5mA
Package Power Derating
Temperature (ºC)
Power Dissipation (Watts)
25
1.00
0.95
0.90
0.85
0.80
0.75
0.70
0.65
0.60
0.55
0.50
30 35 40 45 50 55 60 65 70 75 80 85
Operating Area
DEVICE PERFORMANCE DATA*
RELAY PERFORMANCE DATA*
Typical Turn-On Time
(N=50, IF=2mA, IL=120mADC, TA=25ºC)
0.88 1.58 2.28 2.981.23 1.93 2.63
Turn-On Time (ms)
Device Count (N)
25
20
15
10
5
0
Typical Turn-Off Time
(N=50, IF=2mA, IL=120mADC, TA=25ºC)
0.06 0.14 0.22 0.300.260.180.10
Turn-Off Time (ms)
Device Count (N)
25
20
15
10
5
0
Typical On-Resistance Distribution
(N=50, IL=120mADC, TA=25ºC)
35
30
25
20
15
10
5
0
9.25 10.258.75 9.75 10.75
On-Resistance (:)
Device Count (N)
Typical IF for Switch Operation
(N=50, IL=120mADC, TA=25ºC)
0.42 0.66 0.900.30 0.54 0.78 1.02
LED Current (mA)
Device Count (N)
25
20
15
10
5
0
Typical IF for Switch Dropout
(N=50, IL=120mADC, TA=25ºC)
25
20
15
10
5
0
0.30 0.54 0.780.18 0.42 0.66 0.90
LED Current (mA)
Device Count (N)
Typical Blocking Voltage Distribution
(N=50, TA=25ºC)
35
30
25
20
15
10
5
0
365 385 405 425375 395 415
Blocking Voltage (VP)
Device Count (N)
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ITC135P
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R06
* The Performance data shown in the graphs above is typical of device performance. For guaranteed parameters not indicated in the written specifications, please contact our application
department.
Typical Turn-On Time
vs. LED Forward Current
(IL=120mADC)
LED Forward Current (mA)
Turn-On Time (ms)
05 1015202530354045
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
50
Typical Turn-Off Time
vs. LED Forward Current
(IL=120mADC)
LED Forward Current (mA)
Turn-Off Time (ms)
05 1015202530354045
0.18
0.16
0.14
0.12
0.10
0.08
0.06
0.04
50
Typical On-Resistance
vs. Temperature
(IF=5mA, IL=120mADC)
Temperature (ºC)
On-Resistance (:)
-40
60
50
40
30
20
10
0
-20 0 20 40 60 80 100
Typical Turn-On Time
vs. Temperature
(IL=120mADC)
Temperature (ºC)
Turn-On Time (ms)
-40
3.0
2.5
2.0
1.5
1.0
0.5
0
-20 0 20 40 60 80 100
IF=5mA
IF=10mA
IF=20mA
IF=10mA
IF=20mA
Typical Turn-Off Time
vs. Temperature
(IF=5mA, IL=120mA)
Temperature (ºC)
Turn-Off Time (ms)
-40
0.30
0.25
0.20
0.15
0.10
0.05
0
-20 0 20 40 60 80 100
Load Current
vs. Ambient Temperature
(IF=5mA)
Ambient Temperature (ºC)
Percent of Maximum
Load Rating (Typical) (%)
-40
100
75
50
25
0
025
50 85
Typical IF for Switch Operation
vs. Temperature
(IL=120mADC)
Temperature (ºC)
LED Current (mA)
-40
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
-20 0 20 40 60 80 100
Typical IF for Switch Dropout
vs. Temperature
(IL=120mADC)
Temperature (ºC)
LED Current (mA)
-40
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
-20 0 20 40 60 80 100
Typical Load Current
vs. Load Voltage
(IF=5mA, TA=25ºC)
Load Voltage (V)
Load Current (mA)
200
150
100
50
0
-50
-100
-150
-200
-2.0 -1.5 -1.0 -0.5 0 0.5 1.0 2.01.5
Typical Blocking Voltage
vs. Temperature
Temperature (ºC)
Blocking Voltage (VP)
-40
415
410
405
400
395
390
385
380
-20 0 20 40 60 80 100
Typical Leakage vs. Temperature
Measured across Pins 15&16
Temperature (ºC)
Leakage (PA)
-40
0.10
0.09
0.08
0.07
0.06
0.05
0.04
0.03
0.02
0.01
0
-20 0 20 40 60 80 100
Energy Rating Curve
Time
Load Current (A)
10Ps
1.2
1.0
0.8
0.6
0.4
0.2
0
1ms100Ps 100ms 1s
10ms 10s 100s
RELAY PERFORMANCE DATA (cont)*
INTEGRATED CIRCUITS DIVISION
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6R06
ITC135P
* The Performance data shown in the graphs above is typical of device performance. For guaranteed parameters not indicated in the written specifications, please contact our application
department.
0
0
8
4
16
12
24
20
28
12345678910
IF=10mA
IF=5mA
IF=2mA
IF=1mA
Typical Transfer Characteristics
Single Transistor Detector
Collector Emitter Voltage
Collector Current (mA)
Single Transistor
Typical Normalized CTR vs. Temperature
(VCE=0.5V)
Temperature (ºC)
Normalized CTR (%)
8
7
6
5
4
3
2
1
0-40 -20 0 20 40 60 80 120100
I
F
=1mA
I
F
=2mA
I
F
=5mA
I
F
=10mA
I
F
=15mA
I
F
=20mA
Single Transistor
Typical Normalized CTR vs. IF
(VCE=0.5V)
Forward Current (mA)
Normalized CTR (%)
024681012141618
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
020
Single Transistor - Typical IC vs. IF
(VCE=0.5V)
Forward Current (mA)
Collector Current (mA)
02468 1210 14 16 18 20
12
10
8
6
4
2
0
Darlington Transistor - Typical IC vs. IF
(VCE=0.5V)
Forward Current (mA)
Collector Current (mA)
02468 1210 14 16 18 20
16
14
12
10
8
6
4
2
0
Darlington Transistor
Typical Normalized CTR vs. IF
(VCE=0.8V)
Forward Current (mA)
Normalized CTR (%)
024681012141618
2.5
2.0
1.5
1.0
0.5
0
20
Darlington Transistor
Typical Normalized CTR vs. Temperature
(VCE=0.8V)
Temperature (ºC)
Normalized CTR (%)
-40
3.0
2.5
2.0
1.5
1.0
0.5
0
-20 0 20 40 60 80 100
IF=1mA
IF=2mA
IF=5mA
IF=10mA
IF=15mA
IF=20mA
Typical Transfer Characteristics
Darlington Transistor
Collector Emitter Voltage
Collector Current (mA)
0246810
20
40
60
80
100
120
Ib=2PA
Ib=4PA
Ib=6PA
Ib=8PA
Ib=10PA
V-I Characteristics for Test Circuit
IOUT (mA)
VIN (Volts)
20
10
9
8
7
6
5
4
40 60 80 100 120
PHOTOTRANSISTOR PERFORMANCE DATA*
DARLINGTON PERFORMANCE DATA*
INTEGRATED CIRCUITS DIVISION
ITC135P
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Manufacturing Information
Moisture Sensitivity
All plastic encapsulated semiconductor packages are susceptible to moisture ingression. IXYS Integrated
Circuits Division classified all of its plastic encapsulated devices for moisture sensitivity according to the
latest version of the joint industry standard, IPC/JEDEC J-STD-020, in force at the time of product
evaluation. We test all of our products to the maximum conditions set forth in the standard, and guarantee proper
operation of our devices when handled according to the limitations and information in that standard as well as to any
limitations set forth in the information or standards referenced below.
Failure to adhere to the warnings or limitations as established by the listed specifications could result in reduced
product performance, reduction of operable life, and/or reduction of overall reliability.
This product carries a Moisture Sensitivity Level (MSL) rating as shown below, and should be handled according
to the requirements of the latest version of the joint industry standard IPC/JEDEC J-STD-033.
Device Moisture Sensitivity Level (MSL) Rating
ITC135P MSL 1
ESD Sensitivity
This product is ESD Sensitive, and should be handled according to the industry standard JESD-625.
Reflow Profile
This product has a maximum body temperature and time rating as shown below. All other guidelines of J-STD-020
must be observed.
Device Maximum Temperature x Time
ITC135P 260ºC for 30 seconds
Board Wash
IXYS Integrated Circuits Division recommends the use of no-clean flux formulations. However, board washing to
remove flux residue is acceptable. Since IXYS Integrated Circuits Division employs the use of silicone coating as an
optical waveguide in many of its optically isolated products, the use of a short drying bake could be necessary if a
wash is used after solder reflow processes. Chlorine- or Fluorine-based solvents or fluxes should not be used.
Cleaning methods that employ ultrasonic energy should not be used.
INTEGRATED CIRCUITS DIVISION
Specification: DS-ITC135P_R06
©Copyright 2013, IXYS Integrated Circuits Division
All rights reserved. Printed in USA.
9/27/2013
For additional information please visit our website at: www.ixysic.com
8
ITC135P
IXYS Integrated Circuits Division makes no representations or warranties with respect to the accuracy or completeness of the contents of this publication and reserves the right to make
changes to specifications and product descriptions at any time without notice. Neither circuit patent licenses nor indemnity are expressed or implied. Except as set forth in IXYS Integrated
Circuits Division’s Standard Terms and Conditions of Sale, IXYS Integrated Circuits Division assumes no liability whatsoever, and disclaims any express or implied warranty, relating to its
products including, but not limited to, the implied warranty of merchantability, fitness for a particular purpose, or infringement of any intellectual property right.
The products described in this document are not designed, intended, authorized or warranted for use as components in systems intended for surgical implant into the body, or in other
applications intended to support or sustain life, or where malfunction of IXYS Integrated Circuits Division’s product may result in direct physical harm, injury, or death to a person or severe
property or environmental damage. IXYS Integrated Circuits Division reserves the right to discontinue or make changes to its products at any time without notice.
MECHANICAL DIMENSIONS
NOTES:
1. Coplanarity = 0.1016 (0.004) max.
2. Leadframe thickness does not include solder plating
(1000 microinch maximum).
(inches)
mm
DIMENSIONS
8.890 TYP
(0.350 TYP)
0.406 TYP
(0.016 TYP)
10.160±0.381
(0.400±0.015)
7.493±0.127
(0.295±0.005)
10.363±0.127
(0.408±0.005)
1.270 TYP
(0.050 TYP)
0.635 X 45°
(0.025 X 45°)
0.254 ±0.0127
(0.010±0.0005)
1.016 TYP
(0.040 TYP)
0.508±0.1016
(0.020±0.004)
PIN 1
PIN 16
2.057±0.051
(0.081±0.002)
MIN: 0.0254 (0.001)
MAX: 0.102 (0.004)
Lead to Package Standoff:
1.90
(0.075)
1.27
(0.050)
9.30
(0.366)
0.60
(0.024)
PCB Land Pattern
Dimensions
mm
(inches)
Embossment
Embossed Carrier
Top Cover
Tape Thickness
0.102 MAX.
(0.004 MAX.)
330.2 DIA.
(13.00 DIA.)
K0=3.20
(0.126)
K1=2.70
(0.106)
A0=10.90
(0.429)
W=16
(0.630)
B0=10.70
(0.421)
P=12.00
(0.472)
NOTES:
1. All dimensions carry tolerances of EIA Standard 481-2
2. The tape complies with all “Notes” for constant dimensions
listed on page 5 of EIA-481-2
ITC135P
ITC135PTR Tape & Reel
