© 2011 IXYS CORPORATION, All Rights Reserved
GenX3TM 600V
IGBTs
Symbol Test Conditions Maximum Ratings
VCES T
C = 25°C to 150°C 600 V
VCGR T
J = 25°C to 150°C, RGE = 1MΩ 600 V
VGES Continuous ± 20 V
VGEM Transient ± 30 V
IC25 T
C = 25°C 60 A
IC110 T
C = 110°C 30 A
ICM T
C = 25°C, 1ms 150 A
SSOA V
GE = 15V, TVJ = 125°C, RG = 5Ω ICM = 60 A
(RBSOA) Clamped Inductive Load @ ≤ VCES
PC T
C = 25°C 220 W
TJ -55 ... +150 °C
TJM 150 °C
Tstg -55 ... +150 °C
TL 1.6mm (0.062 in.) from Case for 10s 300 °C
TSOLD Plastic Body for 10 seconds 260 °C
Md Mounting Torque (TO-220 & TO-247) 1.13/10 Nm/lb.in.
Weight TO-220 2.5 g
TO-263 3.0 g
TO-263 3.0 g
DS100012B(05/11)
IXGA30N60C3
IXGP30N60C3
IXGH30N60C3
Symbol Test Conditions Characteristic Values
(TJ = 25°C Unless Otherwise Specified) Min. Typ. Max.
BVCES IC = 250μA, VGE = 0V 600 V
VGE(th) IC = 250μA, VCE = VGE 3.0 5.5 V
ICES VCE = VCES, VGE = 0V 15 μA
TJ = 125°C 300 μA
IGES VCE = 0V, VGE = ± 20V ±100 nA
VCE(sat) IC = 20A, VGE = 15V, Note 1 2.6 3.0 V
TJ = 125°C 1.8 V
VCES = 600V
IC110 = 30A
VCE(sat) ≤≤
≤≤
≤ 3.0V
tfi(typ) = 47ns
High-Speed PT IGBTs for
40-100kHz Switching
G = Gate D = Collector
S = Emitter Tab = Collector
TO-247 (IXGH)
G
E
C C (Tab)
TO-263 AA (IXGA)
G
E
C (Tab)
G C E
TO-220AB (IXGP)
C (Tab)
Features
Optimized for Low Switching Losses
Square RBSOA
International Standard Packages
Advantages
High Power Density
Low Gate Drive Requirement
Applications
High Frequency Power Inverters
UPS
Motor Drives
SMPS
PFC Circuits
Battery Chargers
Welding Machines
Lamp Ballasts
IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.
IXGA30N60C3 IXGP30N60C3
IXGH30N60C3
Symbol Test Conditions Characteristic Values
(TJ = 25°C Unless Otherwise Specified) Min. Typ. Max.
gfs IC = 20A, VCE = 10V, Note 1 9 16 S
Cies 915 pF
Coes VCE = 25V, VGE = 0V, f = 1MHz 78 pF
Cres 32 pF
Qg 38 nC
Qge IC = 20A, VGE = 15V, VCE = 0.5 • VCES 8 nC
Qgc 17 nC
td(on) 16 ns
tri 26 ns
Eon 0.27 mJ
td(off) 42 75 ns
tfi 47 ns
Eoff 0.09 0.18 mJ
td(on) 17 ns
tri 28 ns
Eon 0.44 mJ
td(off) 70 ns
tfi 90 ns
Eoff 0.33 mJ
RthJC 0.56 °C/W
RthCS TO-220 0.50 °C/W
TO-247 0.21 °C/W
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.7 5.3 .185 .209
A1 2.2 2.54 .087 .102
A2 2.2 2.6 .059 .098
b 1.0 1.4 .040 .055
b1 1.65 2.13 .065 .084
b2 2.87 3.12 .113 .123
C .4 .8 .016 .031
D 20.80 21.46 .819 .845
E 15.75 16.26 .610 .640
e 5.20 5.72 0.205 0.225
L 19.81 20.32 .780 .800
L1 4.50 .177
∅P 3.55 3.65 .140 .144
Q 5.89 6.40 0.232 0.252
R 4.32 5.49 .170 .216
S 6.15 BSC 242 BSC
e
∅ P
TO-247 Outline
1 2 3
Terminals: 1 - Gate 2 - Collector
3 - Emitter
TO-263 Outline
Pins: 1 - Gate 2 - Drain
TO-220 Outline
1 = Gate
2 = Collector
3 = Emitter
4 = Collector
1 = Gate 2 = Collector
3 = Emitter
Inductive Load, TJ = 125°C
IC = 20A, VGE = 15V
VCE = 300V, RG = 5Ω
Note 2
Inductive Load, TJ = 25°C
IC = 20A, VGE = 15V
VCE = 300V, RG = 5Ω
Note 2
Notes:
1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
2. Switching times & energy losses may increase for higher VCE(Clamp), TJ or RG.
© 2011 IXYS CORPORATION, All Rights Reserved
IXGA30N60C3 IXGP30N60C3
IXGH30N60C3
Fi g . 1. Ou tp u t Char ac ter i sti cs @ TJ = 25ºC
0
5
10
15
20
25
30
35
40
0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6
VCE - Volts
IC - Amperes
V
GE
= 15
V
13
V
7V
9V
11V
Fig. 2. Extended Output Characteristics @ TJ = 25º C
0
20
40
60
80
100
120
140
160
180
0 2 4 6 8 101214161820
VCE - Volts
IC
-
Amperes
V
GE
= 15V
7V
9V
11V
13V
Fi g . 3. Output Charact er i sti cs @ TJ = 125ºC
0
5
10
15
20
25
30
35
40
0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2
VCE - Volts
IC - Amperes
V
GE
= 15
V
13
V
11
V
7V
9V
Fig. 4. Dependence of VCE(sat) on
Junction T emperature
0.5
0.6
0.7
0.8
0.9
1.0
1.1
25 50 75 100 125 150
TJ - Degrees Centigrade
VCE(sat) - Normalized
V
GE
= 15V
I
C
= 40A
I
C
= 20A
I
C
= 10A
Fi g . 5. Co llecto r -to-Emi tter Vo l tag e
vs. Gate- to -Emi tter Vol ta g e
2.5
3.0
3.5
4.0
4.5
5.0
5.5
7 8 9 101112131415
VGE - Volts
VCE - Volts
I
C
= 40
A
T
J
= 25ºC
10
A
20
A
Fig. 6. Input Admittance
0
10
20
30
40
50
60
70
5 5.5 6 6.5 7 7.5 8 8.5 9 9.5 10 10.5 11
VGE - Volts
IC
-
Amperes
T
J
= 125ºC
25ºC
- 40ºC
IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.
IXGA30N60C3 IXGP30N60C3
IXGH30N60C3
Fig. 11. Maximum Transient T h ermal Im pedance for IGBT
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
Z
(th)JC
- ºC / W
Fig. 7. Tr ansco nductance
0
4
8
12
16
20
24
0 1020304050607080
I
C
- Amperes
g
f s
-
Siemens
T
J
= - 40ºC
25ºC
125ºC
Fi g . 10. R ever se-B ias Safe Op er ati n g Area
0
10
20
30
40
50
60
70
100 150 200 250 300 350 400 450 500 550 600 650
V
CE
- Volts
I
C
- Amperes
T
J
= 125ºC
R
G
= 5
dv / dt < 10V / ns
Fig. 8. Gate Charge
0
2
4
6
8
10
12
14
16
0 5 10 15 20 25 30 35 40
Q
G
- NanoCoulombs
V
GE
- Volts
V
CE
= 300V
I
C
= 20A
I
G
= 10mA
Fig. 9. Capacitance
10
100
1,000
10,000
0 5 10 15 20 25 30 35 40
V
CE
- Volts
Capacitance - PicoFarads
f
= 1 MHz
Cies
Coes
Cres
© 2011 IXYS CORPORATION, All Rights Reserved
IXGA30N60C3 IXGP30N60C3
IXGH30N60C3
Fig. 12. Inductive Switching Energy Loss vs.
Gate Re sist an ce
0.2
0.3
0.4
0.5
0.6
0.7
0.8
4 6 8 101214161820
R
G
- Ohms
Eoff - MilliJoules
0.2
0.4
0.6
0.8
1.0
1.2
1.4
Eon - MilliJoules
E
off
E
on
- - - -
T
J
= 125ºC , V
GE
= 15V
V
CE
= 300V
I
C
= 40A
I
C
= 20A
Fig. 17. Inductive T urn-off Switching T imes vs.
Junction Temperature
20
40
60
80
100
120
140
160
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
t
f i - Nanoseconds
20
30
40
50
60
70
80
90
t d
(
off
)
- Nanoseconds
t
fi
t
d(off)
- - - -
R
G
= 5
, V
GE
= 15V
V
CE
= 300V
I C = 40A, 20A
Fig. 15. Inductive Turn-off Switching Times vs.
Gate Res i stance
80
100
120
140
160
180
4 6 8 101214161820
R
G
- Ohms
t f i - Nanoseconds
40
60
80
100
120
140
t d
(
off
)
- Nanoseconds
t
fi
t
d(off)
- - - -
T
J
= 125ºC, V
GE
= 15V
V
CE
= 300V
I
C
= 40A
I
C
= 20A
Fig. 13. Inductive Switching Energy Loss vs.
Co l l ecto r C u rrent
0
0.1
0.2
0.3
0.4
0.5
0.6
10 15 20 25 30 35 40
I
C
- Amperes
Eoff - MilliJoules
0
0.2
0.4
0.6
0.8
1
1.2
Eon - MilliJoules
E
off
E
on
- - - -
R
G
= 5
,
V
GE
= 15V
V
CE
= 300V
T
J
= 125ºC
T
J
= 25ºC
Fig. 14. Inductive Switching Energy Loss vs.
Junction T emperature
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
Eoff - MilliJoules
0
0.2
0.4
0.6
0.8
1
1.2
1.4
E
on - MilliJoules
Eoff Eon
- - - -
R
G
= 5
,
V
GE
= 15V
V
CE
= 300V
I
C
= 40A
I
C
= 20A
Fig. 16. Inductive Turn-off Switching T imes vs.
Co l lecto r C urr ent
0
20
40
60
80
100
120
140
160
180
10 15 20 25 30 35 40
I
C
- Amperes
t f i - Nanoseconds
20
30
40
50
60
70
80
90
100
110
t d
(
off
)
- Nanoseconds
t
fi
t
d(off)
- - - -
R
G
= 5
, V
GE
= 15V
V
CE
= 300V
T
J
= 125ºC
T
J
= 25ºC
IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.
IXGA30N60C3 IXGP30N60C3
IXGH30N60C3
IXYS REF: G_30N60C3(4D)05-02-11-A
Fig. 19. Inductive Turn-on Switching Times vs.
Collector C urrent
0
10
20
30
40
50
60
70
10 15 20 25 30 35 40
I
C
- Amperes
t
r i
- Nanoseconds
10
12
14
16
18
20
22
24
t
d
(
on
)
- Nanoseconds
t
ri
t
d(on)
- - - -
R
G
= 5
, V
GE
= 15V
V
CE
= 300V
T
J
= 125ºC
T
J
= 25ºC
Fig. 20. Inductive T urn-on Switching T imes vs.
Junction T emperature
15
25
35
45
55
65
75
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
t
r i
- Nanoseconds
15
16
17
18
19
20
21
t
d
(
on
)
- Nanoseconds
t
ri
t
d(on)
- - - -
R
G
= 5
, V
GE
= 15V
V
CE
= 300V
I
C
= 20A
I
C
= 40A
Fig. 18. Inductive Turn-on Switching Times vs.
Gate R esi stan ce
10
20
30
40
50
60
70
80
90
4 6 8 101214161820
R
G
- Ohms
t
r i
- Nanoseconds
14
16
18
20
22
24
26
28
30
t
d
(
on
)
- Nanoseconds
t
ri
t
d(on)
- - - -
T
J
= 125ºC, V
GE
= 15V
V
CE
= 300V
I
C
= 20A
I
C
= 40A
