http://www.fujielectric.com/products/semiconductor/ 7MBR150VN120-50 IGBT Modules IGBT MODULE (V series) 1200V / 150A / PIM Features Low VCE(sat) Compact Package P.C.Board Mount Module Converter Diode Bridge Dynamic Brake Circuit RoHS compliant product Applications Inverter for Motor Drive AC and DC Servo Drive Amplifier Uninterruptible Power Supply Maximum Ratings and Characteristics Absolute Maximum Ratings (at Tc=25C unless otherwise specified) Items Symbols Inverter Collector-Emitter voltage Gate-Emitter voltage Collector current Converter Brake Collector power dissipation Collector-Emitter voltage Gate-Emitter voltage Collector current Collector power dissipation Repetitive peak reverse voltage (Diode) Repetitive peak reverse voltage Average output current Surge current (Non-Repetitive) I2t (Non-Repetitive) Conditions VCES VGES Ic Icp -Ic -Ic pulse Pc VCES VGES IC ICP PC VRRM VRRM IO IFSM I2 t Junction temperature Tj Operating junciton temperature (under switching conditions) Tjop Case temperature Storage temperature Tc Tstg Continuous 1ms Tc=100C Tc=80C 1ms 1 device Continuous 1ms 1 device Tc=80C Tc=80C 50Hz/60Hz, sine wave 10ms, Tj=150C half sine wave Inverter, Brake Converter Inverter, Brake Converter Isolation voltage between terminal and copper base (*1) Viso between thermistor and others (*2) AC : 1min. Screw torque Mounting (*3) M5 - Maximum ratings 1200 20 150 300 150 300 885 1200 20 100 200 520 1200 1600 150 780 3000 175 150 150 150 125 -40 to +125 Units V V A W V V A W V V A A A2 s C 2500 VAC 3.5 Nm Note *1: All terminals should be connected together during the test. Note *2: Two thermistor terminals should be connected together, other terminals should be connected together and shorted to base plate during the test. Note *3: Recommendable value : 2.5-3.5 Nm (M5) 1 1261b JULY 2015 7MBR150VN120-50 IGBT Modules http://www.fujielectric.com/products/semiconductor/ Electrical characteristics (at Tj= 25C unless otherwise specified) Items Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Symbols Conditions ICES IGES VGE (th) VGE = 0V, VCE = 1200V VGE = 0V, VGE = 20V VCE = 20V, IC = 150mA VCE (sat) (terminal) VGE = 15V IC = 150A VCE (sat) (chip) VGE = 15V IC = 150A Rg (int) Cies ton tr tr (i) toff tf VCE = 10V, VGE = 0V, f = 1MHz Inverter Collector-Emitter saturation voltage Internal gate resistance Input capacitance Turn-on time Turn-off time VF (terminal) VCC = 600V IC = 150A VGE = +15 / -15V RG = 1.8 IF = 150A Forward on voltage Brake Tj=25C Tj=125C Tj=150C Tj=25C Tj=125C Tj=150C Units mA nA V V nF s V VF (chip) IF = 150A trr IF = 150A Zero gate voltage collector current ICES VGE = 0V VCE = 1200V - - 1.0 mA Gate-Emitter leakage current IGES VCE = 0V VGE = +20 / -20V - - 200 nA VCE (sat) (terminal) VGE = 15V IC = 100A 465 3305 2.15 2.45 2.50 1.75 2.05 2.10 7.5 0.39 0.09 0.53 0.06 2.00 1.40 5000 495 3375 2.60 2.20 1.20 0.60 1.00 0.30 1.00 2.45 1.0 520 3450 Reverse recovery time Collector-Emitter saturation voltage Internal gate resistance Turn-on time Turn-off time Reverse current Thermistor Converter Tj=25C Tj=125C Tj=150C Tj=25C Tj=125C Tj=150C Characteristics min. typ. max. 1.0 200 6.0 6.5 7.0 2.45 2.90 2.80 2.85 1.85 2.30 2.20 2.25 5 12.5 0.39 1.20 0.09 0.60 0.03 0.53 1.00 0.06 0.30 2.50 2.95 2.80 2.75 1.90 2.35 2.20 2.15 0.35 VCE (sat) (chip) VGE = 15V IC = 100A Rg (int) ton tr toff tf IRRM - Tj=25C Tj=125C Tj=150C Tj=25C Tj=125C Tj=150C VCE = 600V IC = 100A VGE = +15 / -15V RG = 1.6 VR = 1200V Forward on voltage VFM (chip) Reverse current IRRM Resistance R B value B VR = 1600V T = 25C T = 100C T = 25 / 50C Symbols Conditions IF = 150A terminal chip s V s mA V mA K Thermal resistance characteristics Items Thermal resistance (1device) Rth(j-c) Contact thermal resistance (1device) (*4) Rth(c-f) Inverter IGBT Inverter FWD Brake IGBT Converter Diode with Thermal Compound Note *4: This is the value which is defined mounting on the additional cooling fin with thermal compound. 2 Characteristics min. typ. max. 0.17 0.31 0.29 0.24 0.05 - Units C/W 7MBR150VN120-50 IGBT Modules http://www.fujielectric.com/products/semiconductor/ Characteristics (Representative) [ Inverter ] Collector current vs. Collector-Emitter voltage (typ.) [ Inverter ] Collector current vs. Collector-Emitter voltage (typ.) Tj= 25oC / chip Tj= 150oC / chip 300 300 15V Collector current: IC [A] VGE=20V 12V 250 200 150 10V 100 50 12V 200 150 10V 100 50 8V 0 8V 0 0 1 2 3 4 5 0 Collector-Emitter voltage: VCE[V] 2 3 4 5 [ Inverter ] Collector-Emitter voltage vs. Gate-Emitter voltage (typ.) Tj= 25oC / chip 8 Tj=25C Collector - Emitter voltage: VCE [V] 300 Tj=150C 250 Collector current: IC [A] 1 Collector-Emitter voltage: VCE[V] [ Inverter ] Collector current vs. Collector-Emitter voltage (typ.) VGE=15V / chip 200 Tj=125C 150 100 50 0 6 4 Ic=300A Ic=150A Ic=75A 2 0 0 1 2 3 4 5 5 10 15 20 25 Collector current: IC [A] Gate - Emitter voltage: VGE [V] [ Inverter ] Capacitance vs. Collector-Emitter voltage (typ.) [ Inverter ] Dynamic gate charge (typ.) Vcc=600V, Ic=150A, Tj= 25C VGE=0V, f= 1MHz, Tj= 25oC Collector - Emitter voltage: VCE [200V/div] Gate - Emitter voltage: VGE [5V/div] 100.0 Capacitance: Cies, Coes, Cres [nF] 15V 250 Collector current: IC [A] VGE=20V Cies 10.0 Cres 1.0 Coes 0.1 0.0 0 10 20 VCE VGE 0 -1200 30 Collector - Emitter voltage: VCE [V] 0 Gate charge: Qg [nC] 3 1200 7MBR150VN120-50 IGBT Modules http://www.fujielectric.com/products/semiconductor/ [ Inverter ] Switching time vs. Collector current (typ.) Vcc=600V, VGE=15V, Rg=1.8, Tj= 150C 10000 1000 Switching time : ton, tr, toff, tf [ nsec ] Switching time : ton, tr, toff, tf [ nsec ] [ Inverter ] Switching time vs. Collector current (typ.) Vcc=600V, VGE=15V, Rg=1.8, Tj= 125C toff ton tr 100 tf 10 0 100 200 300 10000 1000 ton tf 10 400 0 Switching loss : Eon, Eoff, Err [mJ/pulse ] Switching time : ton, tr, toff, tf [ nsec ] [ Inverter ] Switching time vs. gate resistance (typ.) Vcc=600V, Ic=150A, VGE=15V, Tj= 125C 10000 toff ton tr 100 tf 10 0.1 1.0 10.0 100.0 100 200 300 Collector current: IC [A] 30 Eoff(150C) Eoff(125C) Eon(150C) Eon(125C) Err(150C) Err(125C) 20 10 0 0 100 200 300 [ Inverter ] Reverse bias safe operating area (max.) +VGE=15V,-VGE <= 15V, RG >= 1.8 ,Tj = 150C 20 400 16 Eoff(125oC) 14 Eon(150oC) Eon(125oC) 10 Collector current: IC [A] Eoff(150oC) 12 Err(150oC) 8 Err(125oC) 6 4 300 200 RBSOA (Repetitive pulse) 100 2 0 0 0 1 10 400 Collector current: IC [A] [ Inverter ] Switching loss vs. gate resistance (typ.) Vcc=600V, Ic=150A, VGE=15V 18 400 [ Inverter ] Switching loss vs. Collector current (typ.) Vcc=600V, VGE=15V, Rg=1.8 Gate resistance : Rg [] Switching loss : Eon, Eoff, Err [mJ/pulse ] tr 100 Collector current: IC [A] 1000 toff 0 100 400 800 1200 Collector-Emitter voltage : VCE [V] (Main terminals) Gate resistance : Rg [] 4 7MBR150VN120-50 IGBT Modules http://www.fujielectric.com/products/semiconductor/ [ Inverter ] Reverse recovery characteristics (typ.) Vcc=600V, VGE=15V, Rg=1.8 [ Inverter ] Forward current vs. forward on voltage (typ.) chip 250 Tj=25oC 200 150 Tj=150oC 100 Tj=125oC 50 0 0 1 2 1000 Reverse recovery current : Irr [ A ] Reverse recovery time : trr [ nsec ] Forward current : IF [A] 300 3 Irr(150C) Irr(125C) trr(150C) trr(125C) 100 10 4 0 100 Forward on voltage : VF [V] 200 300 400 Forward current : IF [A] [ Converter ] Forward current vs. forward on voltage (typ.) chip Forward current : IF [A] 300 Tj=125C C Tj=25C 200 100 0 0 1 2 3 4 Forward on voltage : VFM [V] [ Thermistor ] Temperature characteristic (typ.) 100 1.00 Resistance : R [k] Thermal resistanse : Rth(j-c) [ C/W ] Transient thermal resistance (max.) FWD[Inverter] Conv. Diode IGBT[Inverter] 0.10 IGBT[Brake] Zth = 4 r n =1 n n rn [C/W] 0.01 0.001 0.010 1 [sec] 0.0023 IGBT 0.01781 FWD 0.03271 B-IGBT 0.03111 Conv 0.02574 n t - 1 - e n 2 0.0301 0.04514 0.08294 0.07886 0.06527 3 0.0598 0.06377 0.11717 0.11141 0.09220 0.100 4 0.0708 0.03928 0.07217 0.06862 0.05679 10 1 0.1 1.000 -60 -40 -20 0 20 40 60 80 100 120 140 160 180 Temperature [C ] Pulse width : Pw [sec] 5 7MBR150VN120-50 [ Brake ] Collector current vs. Collector-Emitter voltage (typ.) [ Brake ] Collector current vs. Collector-Emitter voltage (typ.) Tj= 25oC / chip Tj= 150oC / chip VGE=20V 200 15V VGE=20V 12V Collector current: IC [A] 200 Collector current: IC [A] IGBT Modules http://www.fujielectric.com/products/semiconductor/ 150 10V 100 50 15V 150 12V 10V 100 50 8V 8V 0 0 0 1 2 3 4 0 5 Collector-Emitter voltage: VCE[V] 4 5 Tj= 25oC / chip 8 Tj=25C Collector - Emitter voltage: VCE [V] Collector current: IC [A] 3 [ Brake ] Collector-Emitter voltage vs. Gate-Emitter voltage (typ.) Tj=150C 150 Tj=125C 100 50 0 6 4 Ic=200A Ic=100A Ic=50A 2 0 0 1 2 3 4 5 5 10 15 20 Collector-Emitter voltage: VCE[V] Gate - Emitter voltage: VGE [V] [ Brake ] Capacitance vs. Collector-Emitter voltage (typ.) [ Brake ] Dynamic gate charge (typ.) Vcc=600V, Ic=100A, Tj= 25C VGE=0V, f= 1MHz, Tj= 25oC Collector - Emitter voltage: VCE [200V/div] Gate - Emitter voltage: VGE [5V/div] 100.0 Capacitance: Cies, Coes, Cres [nF] 2 Collector-Emitter voltage: VCE[V] [ Brake ] Collector current vs. Collector-Emitter voltage (typ.) VGE=15V / chip 200 1 Cies 10.0 1.0 Cres Coes 0.1 0 10 20 30 VGE VCE 0 -1000 Collector - Emitter voltage: VCE [V] 0 Gate charge: Qg [nC] 6 25 1000 7MBR150VN120-50 IGBT Modules http://www.fujielectric.com/products/semiconductor/ Outline Drawings (Unit: mm) ( shows theoretical dimension. ) shows reference dimension. Section A-A Weight: 310g(typ.) Equivalent Circuit [ Converter ] [ Brake] [ Inverter ] 7 [ Thermistor ] 7MBR150VN120-50 IGBT Modules http://www.fujielectric.com/products/semiconductor/ WARNING 1.This Catalog contains the product specifications, characteristics, data, materials, and structures as of July 2015. The contents are subject to change without notice for specification changes or other reasons. When using a product listed in this Catalog, be sur to obtain the latest specifications. 2.All applications described in this Catalog exemplify the use of Fuji's products for your reference only. No right or license, either express or implied, under any patent, copyright, trade secret or other intellectual property right owned by Fuji Electric Co., Ltd. is (or shall be deemed) granted. Fuji Electric Co., Ltd. makes no representation or warranty, whether express or implied, relating to the infringement or alleged infringement of other's intellectual property rights which may arise from the use of the applications described herein. 3.Although Fuji Electric Co., Ltd. is enhancing product quality and reliability, a small percentage of semiconductor products may become faulty. When using Fuji Electric semiconductor products in your equipment, you are requested to take adequate safety measures to prevent the equipment from causing a physical injury, fire, or other problem if any of the products become faulty. It is recommended to make your design failsafe, flame retardant, and free of malfunction. 4.The products introduced in this Catalog are intended for use in the following electronic and electrical equipment which has normal reliability requirements. * Computers * OA equipment * Communications equipment (terminal devices) * Measurement equipment * Machine tools * Audiovisual equipment * Electrical home appliances * Personal equipment * Industrial robots etc. 5.If you need to use a product in this Catalog for equipment requiring higher reliability than normal, such as for the equipment listed below, it is imperative to contact Fuji Electric Co., Ltd. to obtain prior approval. When using these products for such equipment, take adequate measures such as a backup system to prevent the equipment from malfunctioning even if a Fuji's product incorporated in the equipment becomes faulty. * Transportation equipment (mounted on cars and ships) * Trunk communications equipment * Traffic-signal control equipment * Gas leakage detectors with an auto-shut-off feature * Emergency equipment for responding to disasters and anti-burglary devices * Safety devices * Medical equipment 6.Do not use products in this Catalog for the equipment requiring strict reliability such as the following and equivalents to strategic equipment (without limitation). * Space equipment * Aeronautic equipment * Nuclear control equipment * Submarine repeater equipment 7.Copyright (c)1996-2015 by Fuji Electric Co., Ltd. All rights reserved. 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