7MBR150VN-120-50 - Fuji Electric

http://www.fujielectric.com/products/semiconductor/

1261b

JULY 2015

7MBR150VN120-50 IGBT Modules

IGBT MODULE (V series)

1200V / 150A / PIM

Features

Low VCE(sat)

Compact Package

P.C.Board Mount Module

Converter Diode Bridge Dynamic Brake Circuit

RoHS compliant product

Applications

Inverter for Motor Drive

AC and DC Servo Drive Amplier

Uninterruptible Power Supply

Note *1: All terminals should be connected together during the test.

Note *2: Two thermistor terminals should be connected together, other terminals should be connected together and shorted to base plate during the test.

Note *3: Recommendable value : 2.5-3.5 Nm (M5)

Maximum Ratings and Characteristics

Absolute Maximum Ratings (at Tc=25°C unless otherwise specied)

Items Symbols Conditions Maximum

ratings Units

Inverter

Collector-Emitter voltage VCES 1200 V

Gate-Emitter voltage VGES ±20 V

Collector current

Ic Continuous Tc=100°C 150

Icp 1ms Tc=80°C 300

-Ic 150

-Ic pulse 1ms 300

Collector power dissipation Pc 1 device 885 W

Brake

Collector-Emitter voltage VCES 1200 V

Gate-Emitter voltage VGES ±20 V

Collector current ICContinuous Tc=80°C 100 A

ICP 1ms Tc=80°C 200

Collector power dissipation PC1 device 520 W

Repetitive peak reverse voltage (Diode) VRRM 1200 V

Converter

Repetitive peak reverse voltage VRRM 1600 V

Average output current IO50Hz/60Hz, sine wave 150 A

Surge current (Non-Repetitive) IFSM 10ms, Tj=150°C

half sine wave

780 A

I2t (Non-Repetitive) I2t 3000 A2s

Junction temperature Tj Inverter, Brake 175

°C

Converter 150

Operating junciton temperature

(under switching conditions) Tjop Inverter, Brake 150

Converter 150

Case temperature Tc 125

Storage temperature Tstg -40 to +125

Isolation voltage

between terminal and copper base (*1)

between thermistor and others (*2)

Viso AC : 1min. 2500 VAC

Screw torque Mounting (*3) - M5 3.5 N m

7MBR150VN120-50

http://www.fujielectric.com/products/semiconductor/

IGBT Modules

Electrical characteristics (at Tj= 25°C unless otherwise specied)

Items Symbols Conditions Characteristics Units

min. typ. max.

Inverter

Zero gate voltage collector current ICES VGE = 0V, VCE = 1200V - - 1.0 mA

Gate-Emitter leakage current IGES VGE = 0V, VGE = ±20V - - 200 nA

Gate-Emitter threshold voltage VGE (th) VCE = 20V, IC = 150mA 6.0 6.5 7.0 V

Collector-Emitter saturation voltage

VCE (sat)

(terminal)

VGE = 15V

IC = 150A

Tj=25°C - 2.45 2.90

Tj=125°C - 2.80 -

Tj=150°C - 2.85 -

VCE (sat)

(chip)

VGE = 15V

IC = 150A

Tj=25°C - 1.85 2.30

Tj=125°C - 2.20 -

Tj=150°C - 2.25 -

Internal gate resistance Rg (int) - - 5 - Ω

Input capacitance Cies VCE = 10V, VGE = 0V, f = 1MHz - 12.5 - nF

Turn-on time

ton

VCC = 600V

IC = 150A

VGE = +15 / -15V

RG = 1.8Ω

- 0.39 1.20

µs

tr - 0.09 0.60

tr (i) - 0.03 -

Turn-off time toff - 0.53 1.00

tf - 0.06 0.30

Forward on voltage

(terminal) IF = 150A

Tj=25°C - 2.50 2.95

Tj=125°C - 2.80 -

Tj=150°C - 2.75 -

(chip) IF = 150A

Tj=25°C - 1.90 2.35

Tj=125°C - 2.20 -

Tj=150°C - 2.15 -

Reverse recovery time trr IF = 150A - - 0.35 µs

Brake

Zero gate voltage collector current ICES VGE = 0V

VCE = 1200V - - 1.0 mA

Gate-Emitter leakage current IGES VCE = 0V

VGE = +20 / -20V - - 200 nA

Collector-Emitter saturation voltage

VCE (sat)

(terminal)

VGE = 15V

IC = 100A

Tj=25°C - 2.15 2.60

Tj=125°C - 2.45 -

Tj=150°C - 2.50 -

VCE (sat)

(chip)

VGE = 15V

IC = 100A

Tj=25°C - 1.75 2.20

Tj=125°C - 2.05 -

Tj=150°C - 2.10 -

Internal gate resistance Rg (int) - - 7.5 - Ω

Turn-on time ton VCE = 600V

IC = 100A

VGE = +15 / -15V

RG = 1.6Ω

- 0.39 1.20

µs

tr - 0.09 0.60

Turn-off time toff - 0.53 1.00

tf - 0.06 0.30

Reverse current IRRM VR = 1200V - - 1.00 mA

Converter

Forward on voltage VFM

(chip) IF = 150A terminal - 2.00 2.45 V

chip - 1.40 -

Reverse current IRRM VR = 1600V - - 1.0 mA

Thermistor

Resistance RT = 25°C - 5000 - Ω

T = 100°C 465 495 520

B value B T = 25 / 50°C 3305 3375 3450 K

Thermal resistance characteristics

Items Symbols Conditions Characteristics Units

min. typ. max.

Thermal resistance (1device) Rth(j-c)

Inverter IGBT - - 0.17

°C/W

Inverter FWD - - 0.31

Brake IGBT - - 0.29

Converter Diode - - 0.24

Contact thermal resistance (1device) (*4) Rth(c-f) with Thermal Compound - 0.05 -

Note *4: This is the value which is dened mounting on the additional cooling n with thermal compound.

IGBT Modules

http://www.fujielectric.com/products/semiconductor/

7MBR150VN120-50

Characteristics (Representative)

Collector - Emitter voltage: V

[V]

[ Inverter ]

Dynamic gate charge (typ.)

Vcc=600V , Ic=150A , Tj= 25°C

C o l l e c t o r - E m i t t e r v o l t a g e : V

C E

[ 2 0 0 V / d i v ]

G a t e - E m i t t e r v o l t a g e : V

G E

[ 5 V / d i v ]

[ Inverter ]

Gate - Emitter voltage: V

[V]

[ Inverter ]

Tj= 25

C / chip

Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)

C o l l e c t o r c u r r e n t : I

[ A ]

[ Inverter ]

Collector current vs. Collector-Emitter voltage (typ.)

C o l l e c t o r c u r r e n t : I

[ A ]

C o l l e c t o r - E m i t t e r v o l t a g e :

C E

[ V ]

[ Inverter ]

Collector current vs. Collector-Emitter voltage (typ.)

Tj= 25

C / chip

Collector current: I

[A]

Capacitance vs. Collector-Emitter voltage (typ.)

C a p a c i t a n c e : C i e s , C o e s , C r e s [ n F ]

Gate charge: Qg [nC]

=0V, f= 1MHz, Tj= 25

=15V / chip

C o l l e c t o r c u r r e n t : I

[ A ]

Collector-Emitter voltage: V

[V]

[ Inverter ]

Tj= 150

C / chip

Collector current vs. Collector-Emitter voltage (typ.)

Collector-Emitter voltage: V

[V]

100

150

200

250

300

012345

=20V

15V

12V

10V

100

150

200

250

300

012345

15V

12V

10V

=20V

100

150

200

250

300

012345

Tj=125°C

Tj=25°C

5 10 15 20 25

Ic=300A

Ic=150A

Ic=75A

0.0

0.1

1.0

10.0

100.0

0 10 20 30

Cies

Coes

Cres

Tj=150°C

-1200 0 1200

VGE

VCE

7MBR150VN120-50

http://www.fujielectric.com/products/semiconductor/

IGBT Modules

[ Inverter ]

Vcc=600V, VGE=±15V, Rg=1.8Ω, Tj= 150°C

Switching time vs. Collector current (typ.)

Collector current: I

[A]

Vcc=600V, Ic=150A, VGE=±15V, Tj= 125°C

S w i t c h i n g t i m e : t o n , t r , t o f f , t f [ n s e c ]

Collector current: I

[A]

Switching loss vs. gate resistance (typ.)

S w i t c h i n g l o s s : E o n , E o f f , E r r [ m J / p u l s e ]

Collector-Emitter voltage : V

(Main terminals)

[V]

Vcc=600V, Ic=150A, VGE=±15V

[ Inverter ]

Switching time vs. Collector current (typ.)

Vcc=600V, VGE=±15V, Rg=1.8Ω, Tj= 125°C

Gate resistance : Rg [Ω]

S w i t c h i n g t i m e : t o n , t r , t o f f , t f [ n s e c ]

[ Inverter ]

Switching time vs. gate resistance (typ.)

S w i t c h i n g t i m e : t o n , t r , t o f f , t f [ n s e c ]

S w i t c h i n g l o s s : E o n , E o f f , E r r [ m J / p u l s e ]

Collector current: I

[A]

[ Inverter ]

Vcc=600V, VGE=±15V, Rg=1.8Ω

Switching loss vs. Collector current (typ.)

Gate resistance : Rg [Ω]

[ Inverter ]

Reverse bias safe operating area (max.)

[ Inverter ]

+VGE=15V,-VGE <= 15V, RG >= 1.8Ω ,Tj = 150°C

C o l l e c t o r c u r r e n t : I C [ A ]

100

200

300

400

0 400 800 1200

RBSOA

(Repetitive pulse)

100

1000

10000

0 100 200 300 400

toff

100

1000

10000

0 100 200 300 400

toff

100

1000

10000

0.1 1.0 10.0 100.0

toff

ton

0 100 200 300 400

Eon(125°C)

Eon(150°C)

Eoff(125°C)

Err(125°C)

Err(150°C)

Eoff(150°C)

0 1 10 100

ton

Err(150oC)

Err(125oC)

Eoff(150oC)

Eon(125oC)

Eon(150oC)

Eoff(125oC)

IGBT Modules

http://www.fujielectric.com/products/semiconductor/

7MBR150VN120-50

[ Inverter ]

Vcc=600V, VGE=±15V, Rg=1.8Ω

Reverse recovery characteristics (typ.)

Forward current : I

[A]

R e v e r s e r e c o v e r y c u r r e n t : I r r [ A ]

R e v e r s e r e c o v e r y t i m e : t r r [ n s e c ]

chip

F o r w a r d c u r r e n t : I F [ A ]

Forward on voltage : V

[V]

F o r w a r d c u r r e n t : I F [ A ]

Transient thermal resistance (max.)

T h e r m a l r e s i s t a n s e : R t h ( j - c ) [ ° C / W ]

Temperature [°C ]

[ Inverter ]

Forward current vs. forward on voltage (typ.)

chip

Forward on voltage : V

[V]

[ Converter ]

Forward current vs. forward on voltage (typ.)

Pulse width : Pw [sec]

[ Thermistor ]

Temperature characteristic (typ.)

R e s i s t a n c e : R [ k Ω ]

100

1000

0 100 200 300 400

Irr(150°C)

100

200

300

01234

Tj=125°C

Tj=25°C

0.1

100

-60 -40 -20 0 20 40 60 80 100 120 140 160 180

Irr(125°C)

trr(150°C)

trr(125°C)

100

150

200

250

300

01234

Tj=125oC

Tj=25oC

Tj=150oC

0.01

0.10

1.00

0.001 0.010 0.100 1.000

FWD[Inverter]

IGBT[Inverter]

Conv. Diode

IGBT[Brake]

n 1 2 3 4

[sec] 0.0023 0.0301 0.0598 0.0708

IGBT 0.01781 0.04514 0.06377 0.03928

[°C/W] FWD 0.03271 0.08294 0.11717 0.07217

B-IGBT 0.03111 0.07886 0.11141 0.06862

Conv 0.02574 0.06527 0.09220 0.05679



∑

−











−⋅=

eZth r

7MBR150VN120-50

http://www.fujielectric.com/products/semiconductor/

IGBT Modules

[ Brake ]

Tj= 150

C / chip

Collector current vs. Collector-Emitter voltage (typ.)

Collector-Emitter voltage: V

[V]

VGE=15V / chip

C o l l e c t o r c u r r e n t : I

[ A ]

Collector-Emitter voltage: V

[V]

Capacitance vs. Collector-Emitter voltage (typ.)

C a p a c i t a n c e : C i e s , C o e s , C r e s [ n F ]

Gate charge: Qg [nC]

=0V, f= 1MHz, Tj= 25

[ Brake ]

Collector current vs. Collector-Emitter voltage (typ.)

Tj= 25

C / chip

Collector-Emitter voltage: V

[V]

C o l l e c t o r c u r r e n t : I

[ A ]

[ Brake ]

Collector current vs. Collector-Emitter voltage (typ.)

C o l l e c t o r c u r r e n t : I

[ A ]

C o l l e c t o r - E m i t t e r v o l t a g e : V

C E

[ V ]

Gate - Emitter voltage: V

[V]

[ Brake ]

Tj= 25

C / chip

Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)

Collector - Emitter voltage: V

[V]

[ Brake ]

Dynamic gate charge (typ.)

Vcc=600V , Ic=100A, Tj= 25°C

C o l l e c t o r - E m i t t e r v o l t a g e : V

C E

[ 2 0 0 V / d i v ]

G a t e - E m i t t e r v o l t a g e : V

G E

[ 5 V / d i v ]

[ Brake ]

100

150

200

012345

=20V

15V

12V

10V

100

150

200

012345

15V

12V

10V

=20V

100

150

200

012345

Tj=125°C

Tj=25°C

5 10 15 20 25

Ic=200A

Ic=100A

Ic=50A

0.1

1.0

10.0

100.0

0 10 20 30

Cies

Coes

Cres

Tj=150°C

-1000 0 1000

VGE

VCE

IGBT Modules

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7MBR150VN120-50

Outline Drawings (Unit: mm)

shows theoretical dimension.

( ) shows reference dimension.

Section A-A

Weight: 310g(typ.)

[ Thermistor ][ Converter ] [ Brake] [ Inverter ]

Equivalent Circuit

7MBR150VN120-50

http://www.fujielectric.com/products/semiconductor/

IGBT Modules

WARNING

1. This Catalog contains the product specications, characteristics, data, materials, and structures as of July 2015.

The contents are subject to change without notice for specication changes or other reasons. When using a product listed in this Catalog, be

sur to obtain the latest specications.

2. All applications described in this Catalog exemplify the use of Fuji's products for your reference only. No right or license, either express or

implied, under any patent, copyright, trade secret or other intellectual property right owned by Fuji Electric Co., Ltd. is (or shall be deemed)

granted. Fuji Electric Co., Ltd. makes no representation or warranty, whether express or implied, relating to the infringement or alleged

infringement of other's intellectual property rights which may arise from the use of the applications described herein.

3. Although Fuji Electric Co., Ltd. is enhancing product quality and reliability, a small percentage of semiconductor products may become

faulty. When using Fuji Electric semiconductor products in your equipment, you are requested to take adequate safety measures to prevent

the equipment from causing a physical injury, re, or other problem if any of the products become faulty. It is recommended to make your

design failsafe, ame retardant, and free of malfunction.

4. The products introduced in this Catalog are intended for use in the following electronic and electrical equipment which has normal reliability

requirements.

• Computers • OA equipment • Communications equipment (terminal devices) • Measurement equipment

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5. If you need to use a product in this Catalog for equipment requiring higher reliability than normal, such as for the equipment listed below,

it is imperative to contact Fuji Electric Co., Ltd. to obtain prior approval. When using these products for such equipment, take adequate

measures such as a backup system to prevent the equipment from malfunctioning even if a Fuji's product incorporated in the equipment

becomes faulty.

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• Emergency equipment for responding to disasters and anti-burglary devices • Safety devices

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(without limitation).

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Neither Fuji Electric Co., Ltd. nor its agents shall be liable for any injury caused by any use of the products not in accordance with instructions

set forth herein.

Global

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North America

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Technical Information IGBT Modules

2015-10

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Please refer to URLs below for futher information about products, application manuals and technical documents.

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