PROFET® BTS 307
Semiconductor Group 1 of 12 2003-Oct-01
Smart Highside Power
Switch
Features
• Overload protection
• Current limitation
• Short circuit protection
• Thermal shutdown
• Overvoltage protection
• Fast demagnetization of inductive loads
• Reverse battery protection1)
• Open drain diagnostic output
• Open load detection in OFF-state
• CMOS compatible input
• Loss of ground and loss of Vbb protection
• Electrostatic discharge (ESD) protection
Application
• µC compatible power switch with diagnostic feedback for 12 V and 24 V DC grounded loads
• Most suitable for inductive loads
• Replaces electromechanical relays, fuses and discrete circuits
General Description
N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic
feedback, monolithically integrated in Smart SIPMOS technology. Providing embedded protective functions.
+ Vbb
IN
ST
Signal GND
ESD
PROFET
OUT
GND
Logic
Voltage
sensor
Voltage
source
Open load
detection
Short circuit
detection
Charge pump
Level shifter Temperature
sensor
Rectifier
Limit for
unclamped
ind. loads
Gate
protection
Current
limit
2
4
1
3
5
Load GND
Load
VLogic
Overvoltage
protection
1) With external current limit (e.g. resistor RGND=150 Ω) in GND connection, resistor in series with ST
connection, reverse load current limited by connected load.
Product Summary
Overvoltage protection Vbb(AZ) 65 V
Operating voltage Vbb(on) 5.8 ... 58 V
On-state resistance RON 250 mΩ
Load current (ISO) IL(ISO) 1.7 A
TO-220AB/5
5
Standard
1
5
Straight leads
1
5
SMD
BTS 307
Semiconductor Group 2 2003-Oct-01
Pin Symbol Function
1 GND - Logic ground
2 IN I Input, activates the power switch in case of logical high signal
3 Vbb + Positive power supply voltage,
the tab is shorted to this pin
4 ST S Diagnostic feedback
5 OUT
(Load, L) O Output to the load
Maximum Ratings at Tj = 25 °C unless otherwise specified
Parameter Symbol Values Unit
Supply voltage (overvoltage protection see page 3) Vbb 65 V
Supply voltage for full short circuit protection2)
Tj Start=-40 ...+150°C Vbb 40 V
Load current (Short circuit current, see page 4) IL self-limited A
Operating temperature range
Storage temperature range Tj
Tstg -40 ...+150
-55 ...+150 °C
Power dissipation (DC), TC ≤ 25 °C Ptot 50 W
Electrostatic discharge capability (ESD) IN, ST:
(Human Body Model) all other pins: VESD 1.0
tbd (>1.0) kV
Input voltage (DC) VIN -0.5 ... +36 V
Current through input pin (DC)
Current through status pin (DC)
see internal circuit diagrams page 5
IIN
IST ±2.0
±5.0 mA
Thermal Characteristics
Parameter and Conditions Symbol Values Unit
min typ max
Thermal re sistance chip - case:
junction - ambient (free air): RthJC
RthJA --
-- --
-- 2.5
75 K/W
2) Status fault signal in case of short to GND. Internal thermal shutdown after several milliseconds. External
shutdown in response to the status fault signal in less than about 1 ms necessary, if the device is used with
higher Vbb.
BTS 307
Semiconductor Group 3 2003-Oct-01
Electrical Characteristics
Parameter and Conditions Symbol Values Unit
at Tj = 25 °C, Vbb = 12 V unless otherwise specified min typ max
Load Switching Capabilities and Characteristics
On-state resistance (pin 3 to 5)
IL = 2 A, Vbb = 24 V Tj=25 °C:
Tj=150 °C:
RON
--
220
390 250
500 mΩ
Nominal load current, ISO Norm (pin 3 to 5)
VON = 0.5 V, TC = 85 °C
IL(ISO) 1.4 1.7 -- A
Output current (pin 5) while GND disconnected or
GND pulled up, Vbb=32 V, VIN= 0, see diagram
page 6
IL(GNDhigh) -- -- 1.1 mA
Turn-on time to 90% VOUT:
Turn-off time to 10% VOUT:
RL = 12 Ω, Vbb = 20V, Tj =-40...+150°C
ton
toff 15
20 --
-- 80
70 µs
Slew rate on, 10 to 30% VOUT,
RL = 12 Ω, Vbb = 20V, Tj =-40...+150°C dV /dton -- -- 6 V/µs
Slew rate off, 10 to 30% VOUT,
RL = 12 Ω, Vbb = 20V, Tj =-40...+150°C -dV/dtoff -- -- 7 V/µs
Operating Parameters
Operating voltage 3) Tj =-40...+150°C: Vbb(on) 5.8 -- 58 V
Undervoltage shutdown Tj =-40...+150°C: Vbb(under) 2.7 -- 4.7 V
Undervoltage restart Tj =-40...+150°C: Vbb(u rst) -- -- 4.9 V
Undervoltage restart of charge pump
see diagram page 10 Tj =-40...+150°C: Vbb(ucp) -- 5.6 7.5 V
Undervoltage hysteresis
∆Vbb(under) = Vbb(u rst) - Vbb(under) ∆Vbb(under) -- 0.4 -- V
Overvoltage protection4) Tj =-40...+150°C:
Ibb=40 mA Vbb(AZ) 65 70 -- V
Standby current (pin 3),
VIN=0 Tj=-40...+150°C: Ibb(off)
--
10 50 µA
Operating current (Pin 1)5), VIN=5 V IGND -- 2.2 -- mA
3) At supply voltage increase up to Vbb= 5.6 V typ without charge pump, VOUT ≈Vbb - 2 V
4) See also VON(CL) in table of protection functions and circuit diagram page 6.
5) Add IST, if IST > 0, add IIN, if VIN>5.5 V
BTS 307
Semiconductor Group 4 2003-Oct-01
Parameter and Conditions Symbol Values Unit
at Tj = 25 °C, Vbb = 12 V unless otherwise specified min typ max
Protection Functions6)
Initial peak short circuit current limit (pin 3 to 5) IL(SCp)
Tj =-40°C:
Tj =25°C:
Tj =+150°C:
--
--
4.0
--
10
--
19
--
--
A
Output clamp (inductive load switch off)
at VOUT = Vbb - VON(CL) IL= 1 A, Tj =-40..+150°C:
VON(CL)
59
-- 75 V
Thermal overload trip temperature Tjt 150 -- -- °C
Thermal hysteresis
∆
Tjt -- 10 -- K
Reverse battery (pin 3 to 1) 7) -Vbb -- -- 32 V
Diagnostic Characteristics
Open load detection current
(included in standby current Ibb(off)) IL(off) -- 6 -- µA
Open load detection voltage Tj=-40..150°C: VOUT(OL) 2.4 3 4V
Short circuit detection voltage
(pin 3 to 5)
VON(SC)
--
2.5 -- V
Input and Status Feedback8)
Input resistance
see circuit page 5 RI -- 20 -- kΩ
Input turn-on threshold voltage VIN(T+) 1 -- 2.5 V
Input turn-off threshold voltage VIN(T-) 0.8 -- -- V
Input threshold hysteresis ∆ VIN(T) -- 0.5 -- V
Off state input current (pin 2), VIN = 0.4 V IIN(off) 1 -- 30 µA
On state input current (pin 2), VIN = 3.5? V IIN(on) 10 25 70 µA
Delay time for status with open load
after Input neg. slope (see diagram page 10) td(ST OL3) -- 200 -- µs
Status output (open drain)
Zener lim it voltage T
j =-40...+150°C, IST = +1.6 mA:
ST low voltage Tj =-40...+150°C, IST = +1.6 mA: VST(high)
VST(low) 5.4
-- 6.1
-- --
0.4 V
6) Integrated protection functions are designed to prevent IC destruction under fault conditions described in the
data sheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not
designed for continuous repetitive operation.
7) Requires 150 Ω resistor in GND connection. The reverse load current through the intrinsic drain-source
diode has to be limited by the connected load. Note that the power dissipation is higher compared to normal
operating conditions due to the voltage drop across the intrinsic drain-source diode. The temperature
protection is not active during reverse current operation! Input and Status currents have to be limited (see
max. ratings page 2 and circuit page 6).
8) If a ground resistor RGND is used, add the voltage drop across this resistor.
BTS 307
Semiconductor Group 5 2003-Oct-01
Truth Table
Input- Output Status
level level BTS 307
BTS 707
Normal
operation L
H L
H L
H
Open load L
H
9)
H H
H
Short circuit
to GND L
H L
L L
L
Short circuit
to Vbb L
H H
H H
H
Overtem-
perature L
H L
L L
L
Under-
voltage L
H L
L L
L
Overvoltage no overvoltage shutdown,
see normal operation
L = "Low" Level X = don't care Z = high impedance, potential depends on external circuit
H = "High" Level Status signal after the time delay shown in the diagrams (see fig 5. page 10)
9) Power Transistor off, high impedance, internal pull up current source for open load detection.
Terms
PROFET
V
IN
ST
OUT
GND
bb
VST
VIN
IST
IIN
Vbb
Ibb
IL
VOUT
IGND
VON
1
2
4
3
5
RGND
Input circuit (ESD protection)
IN
GND
I
R
ESD-ZD
I
I
I
ESD zener diodes are not to be used as voltage clamp
at DC conditions. Operation in this mode may result in
a drift of the zener voltage (increase of up to 1 V).
Status output
ST
GND
ESD-
ZD
+5V
RST(ON)
ESD-Zener diode: 6.1 V typ., max 5 mA;
RST(ON) < 0 Ω at 1.6 mA, ESD zener diodes are not to
be used as voltage clamp at DC conditions. Operation
in this mode may result in a drift of the zener voltage
(increase of up to 1 V).
Short circuit detection
Fault Signal at ST-Pin: VON > 2.5 V typ, no switch off by
the PROFET itself, external switch off recommended!
Short circuit
detection
Logic
unit
+ Vbb
OUT
VON
BTS 307
Semiconductor Group 6 2003-Oct-01
Inductive and overvoltage output clamp
+ Vbb
OUT
GND PROFET
VZ
VON
VON clamped to -- V typ.
Overvolt. and reverse batt. protection
+ Vbb
IN
ST
ST
R
IN
R
GND
GND
R
Signal GND
Logic
PROFET
VZ2
I
R
VZ1
VZ1 = 6.2 V typ., VZ2 = 70 V typ., RGND = 150 Ω,
RST= 15 kΩ, RI= 20 kΩ typ.
Open-load detection
OFF-state diagnostic condition: VOUT > 3 V typ.; IN low
Open load
detection
Logic
unit VOUT
Signal GND
IL(OL)
OFF
GND disconnect
PROFET
V
IN
ST
OUT
GND
bb
Vbb 1
2
4
3
5
V
IN V
ST V
GND
+5V
12k
For Vbb=24V and VIN=0V: V ST>2.8V @ IST ≥ 0 if pull ed up as shown.
Any ki nd of load. I n case of I nput=high is VOUT ≈ VIN - VIN(T+) .
GND disconnect with GND pull up
PROFET
V
IN
ST
OUT
GND
bb
Vbb
1
2
4
3
5
VGND
VIN VST
Any kind of load. If VGND > VIN - VIN(T+) device stays off
Due to VGND >0, no VST = low signal av ai l abl e.
Vbb disconnect with energized inductive
load
PROFET
V
IN
ST
OUT
GND
bb
Vbb
1
2
4
3
5
high
Normal load current can be handled by the PROFET
itself.
BTS 307
Semiconductor Group 7 2003-Oct-01
Vbb disconnect with charged external
inductive load
PROFET
V
IN
ST
OUT
GND
bb
1
2
4
3
5
Vbb
high
S
D
If other external inductiv e l oads L are connect ed to the PROFE T,
additional el em ents like D are neces sary.
Inductive Load switch-off energy
dissipation
PROFET
V
IN
ST
OUT
GND
bb
=
E
E
E
EAS
bb
L
R
ELoad
L
R
L
{Z
L
Energy stored in load inductance:
EL = 1/2·L·I2
L
While demagnetizing load inductance, the energy
dissipated in PROFET is
EAS= Ebb + EL - ER= VON(CL)·iL(t) dt,
with an approximate solution for RL > 0 Ω:
EAS= IL· L
2·RL·(Vbb + |VOUT(CL)|)· ln (1+ IL·RL
|VOUT(CL)| )
BTS 307
Semiconductor Group 8 2003-Oct-01
Options Overview
all versions: High-side switch, Input protection, ESD protectionand reverse battery
protection with 150 Ω in GND connection, protection against loss of ground
Type BTS 410D2 410E2 410G2 410H2 307 308
Logic version D E G H
Overtemperatur e protection w ith hysteresi s
Tj >150 °C, latch function10)11)
Tj >150 °C, with auto-restart on cooling X
X
X X
X X
Short circuit to GND protection
switches off when VON>3.5 V typ. and Vbb> 8 V
typ10) (when first turned on after approx. 150 µs) X X
switches off when VON>8.5 V typ.10)
(when first turned on after approx. 150 µs)
Achieved through overtemperature protection
X X
X
X
Open load detection
in OFF-state with sensing current 6 µA typ.
in ON-state with sensing voltage drop across
power transistor
X
X
X X X X
Undervoltage shutdown with auto restart X X X X X X
Overvoltage shutdown with auto restart X X X X - X
Status feedback for
overtemperature
short circuit to GND
short to Vbb
open load
undervoltage
overvoltage
X
X
-12)
X
X
X
X
X
-12)
X
-
-
X
-
-12)
X
-
-
X
X
X
X
-
-
X
X
X
X
X
-
X
X
X
X
-
-
Status output type
CMOS
Open drain X
X
X
X
X
X
Output negative voltage transient limit
(fast inductive load switch off)
to Vbb - VON(CL) X X X X X X
Load current limit
high level (can handl e l oads with high i nrush currents)
low level (bet ter protect i on of application) X X
X
X
X
X
Protection against loss of GND X X X X X X
10) Latch except when Vbb -VOUT < VON(SC) after shutdown. In most cases VOUT = 0 V after shutdown (VOUT ≠
0 V only if forced externally). So the device remains latched unless Vbb < VON(SC) (see page 4). No latch
between turn on and td(SC).
11) With latch function. Reseted by a) Input low, b) Undervoltage, c) Overvoltage
12) Low resistance short Vbb to output may be detected in ON-state by the no-load-detection
BTS 307
Semiconductor Group 9 2003-Oct-01
Timing diagrams
Figure 1a: Vbb turn on, :
IN
V
OUT
t
V
bb
ST open drain
A
A
d(bb IN)
t
in case of too early VIN=high the device m ay not turn on (curve A)
td(bb IN) approx. 150 µs
Figure 2a: Switching an inductive load,
IN
ST
OUT
L
t
V
I
Figure 3a: Short circuit:
shut down by overtempertature, reset by cooling
IN
ST
L
t
I
L(SCr)
I
IL(SCp)
VOUT
Output short to GND
normal
operation
Heating up requires several milliseconds , depending on external
conditi ons. Ex ternal shut down i n response to status fault signal
recommended.
Figure 4a: Overtemperature:
Reset if Tj <Tjt
IN
ST
OUT
J
t
V
T
BTS 307
Semiconductor Group 10 2003-Oct-01
Figure 5a: Open load, : detection in OFF-state, turn
on/off to open load
IN
ST
OUT
L
t
V
I
open normal
td(ST OL3)
*)
td(ST,OL3) depends on external circuitry because of high
impedance
*) IL = 6 µA typ
Figure 5b: Open load, : detection in OFF-state, open
load occurs in off-state
IN
ST
OUT
L
t
V
Iopen normal
normal
*) *)
OUT(OL)
V
*) IL = 6 µA typ
Figure 6a: Undervoltage:
IN
V
OUT
t
V
bb
ST open drain
VV
bb(under) bb(u rst)
bb(u cp )
V
Figure 6b: Undervoltage restart of charge pump
bb(under)
V
Vbb(u
Vbb(u cp)
off-state
on-state
Vbb
Von
charge pump starts at Vbb(ucp) =5.6 V typ.
BTS 307
Semiconductor Group 11 2003-Oct-01
Figure 7a: Overvoltage, no shutdown:
IN
V
OUT
t
V
bb
ST
ON(CL)
V
OUT(OL)
V
BTS 307
Semiconductor Group 12 2003-Oct-01
Package and Ordering Code
All dimensions in mm
Standard TO-220AB/5 Ordering code
BTS 307 tbd
TO-220AB/5, Option E3043 Ordering code
BTS 307 E3043 C67078-S5204-A3
SMD TO-220AB/5, Opt. E3062 Ordering code
BTS 307 E3062A T&R: C67078-S5204-A4
Published by
Infineon Technologies AG,
St.-Martin-Strasse 53,
D-81669 München
© Infineon Technologies AG 2001
All Rights Reserved.
Attention please!
The information herein is given to describe certain
components and shall not be considered as a guarantee of
characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not
limited to warranties of non-infringement, regarding circuits,
descriptions and charts stated herein.
Infineon Technologies is an approved CECC manufacturer.
Information
For further information on technology, delivery terms and
conditions and prices please contact your nearest Infineon
Technologies Office in Germany or our Infineon
Technologies Representatives worldwide (see address list).
Warnings
Due to technical requirements components may contain
dangerous substances. For information on the types in
question please contact your nearest Infineon Technologies
Office.
Infineon Technologies Components may only be used in life-
support devices or systems with the express w ritten approval
of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that life-
support device or system, or to affect the safety or
effectiveness of that device or system. Life support devices
or systems are intended to be implanted in the human body,
or to support and/or maintain and sustain and/or protect
human life. If they fail, it is reasonable to assume that the
health of the user or other persons may be endangered.
