SMBJ HV SERIES Taiwan Semiconductor CREAT BY ART 600W, 180V - 440V Surface Mount Transient Voltage Suppressor FEATURES - Low profile package - Ideal for automated placement - Glass passivated junction - Excellent clamping capability - Fast response time: Typically less than 1.0ps - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 DO-214AA (SMB) MECHANICAL DATA Case: DO-214AA (SMB) Molding compound: UL flammability classification rating 94V-0 Moisture sensitivity level: level 1, per J-STD-020 mm en de d Packing code with suffix "G" means green compound (halogen-free) Terminal: Matte tin plated leads, solderable per JESD22-B102 Meet JESD 201 class 1A whisker test Polarity: Indicated by cathode band Weight: 0.09 g (approximately) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25C unless otherwise noted) PARAMETER Peak power dissipation at TA=25C, tp=1ms (Note 1) Steady state power dissipation VALUE UNIT PPK 600 W PD 5 W IFSM 100 A VF 5 V TJ - 55 to +150 C TSTG - 55 to +150 C tR eco Peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load (Note 2) SYMBOL Maximum instantaneous forward voltage at 50 A for Unidirectional only Operating junction temperature range Storage temperature range Note 1: Non-repetitive current pulse per fig. 3 and derated above TA=25C per fig. 2 No Note 2: For VWM250V only Devices for Bipolar Applications 1. For bidirectional use CA suffix 2. Electrical characteristics apply in both directions ORDERING INFORMATION PART NO. PACKING CODE SMBJxxxx (Note 1) PACKING CODE SUFFIX R5 R4 G M4 PACKAGE PACKING SMB 850 / 7" Plastic reel SMB 3,000 / 13" Paper reel SMB 3,000 / 13" Plastic reel Note 1: "xxxx" defines voltage from 180V (SMBJ180A) to 440V (SMBJ440A) EXAMPLE EXAMPLE PART NO. SMBJ200A R5G PART NO. PACKING CODE SMBJ200A R5 PACKING CODE SUFFIX G DESCRIPTION Green compound Version: E1602 SMBJ HV SERIES Taiwan Semiconductor CREAT BY ART RATINGS AND CHARACTERISTICS CURVES (TA=25C unless otherwise noted) FIG.2 PULSE DERATING CURVE FIG. 1 PEAK PULSE POWER RATING CURVE 125 Non-repetitive pulse waveform shown in fig.3 PEAK PULSE POWER(PPP) OR CURRENT (IPP) A DERATING IN PERCENTAGE (%) PPPM, PEAK PULSE POWER, KW 100 10 1 0.1 0.1 1 10 100 1000 100 75 50 25 0 0 10000 tp, PULSE WIDTH, (s) 10/1000s waveform as defined by R.E.A. 60 40 20 td 0 0 0.5 1 1.5 IFSM, PEAK FORWARD SURGE CURRENT (A) Half value-IPPM/2 80 2 2.5 100 125 150 175 200 mm en de d Peak value IPPM 100 tR eco PEAK PULSE CURRENT (%) 120 75 FIG. 4 MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT Pulse width(td) is defined as the point where the peak current decays to 50% of IPPM tr=10s 50 TA, AMBIENT TEMPERATURE (C) FIG. 3 CLAMPING POWER PULSE WAVEFORM 140 25 3 3.5 4 8.3ms single half sine wave For VWM 250V only 10 1 10 100 NUMBER OF CYCLES AT 60 Hz No t, TIME ms 100 FIG. 5 TYPICAL JUNCTION CAPACITANCE CJ, JUNCTION CAPACITANCE (pF) A 10000 Measured at zero bias 1000 100 f=1.0MHz Vsig=50mVp-p 10 1 Measured at VWM 10 100 V(BR), BREAKDOWN VOLTAGE (V) Version: E1602 SMBJ HV SERIES Taiwan Semiconductor CREAT BY ART Device Marking Code Device UNI BI UNI BI SMBJ180A SMBJ200A SMBJ220A SMBJ250A SMBJ300A SMBJ350A SMBJ400A SMBJ440A SMBJ180CA SMBJ200CA SMBJ220CA SMBJ250CA SMBJ300CA SMBJ350CA SMBJ400CA SMBJ440CA PT PV PX PZ QE QG QK QM PTC PVC PXC PZC QEC QGC QKC QMC Breakdown Voltage (Note 1) VBR V Min. 201 224 246 279 335 391 447 492 Test Current Working Peak Reverse Voltage Maximum Reverse Leakage @ VWM Maximum Peak Pulse Current Maximum Clamping Voltage @ IPPM IT mA VWM V IR A Vc V 1 1 1 1 1 1 1 1 180 200 220 250 300 350 400 440 1 1 1 1 1 1 1 1 IPPM A (Note 2) 2.1 1.2 1.1 1.0 0.8 0.7 0.6 0.6 Max. 222 247 272 309 371 432 494 543 292 324 356 405 486 567 648 713 Notes: 1. VBR measure after IT applied for 300s, IT=square wave pulse or equivalent. No tR eco mm en de d 2. Surge current waveform per figure. 3 and derate per figure. 2. Version: E1602 SMBJ HV SERIES Taiwan Semiconductor PACKAGE OUTLINE DIMENSIONS DO-214AA (SMB) Unit (mm) DIM. Max Min Max A 1.95 2.20 0.077 0.087 B 4.06 4.60 0.160 0.181 C 3.30 3.94 0.130 0.155 D 2.13 2.68 0.084 0.106 E 0.76 1.52 0.030 0.060 F 5.21 5.59 0.205 0.220 G - 0.203 - 0.008 H 0.152 0.305 0.006 0.012 mm en de d Min Symbol Unit (mm) Unit (inch) A 2.3 0.091 B 2.5 0.098 C 4.3 0.169 D 1.8 0.071 E 6.8 0.268 No tR eco SUGGESTED PAD LAYOUT MARKING DIAGRAM Unit (inch) P/N = Device Marking Code G= Green Compound YW = Date Code F= Factory Code Note: Cathode band for uni-directional products only Version: E1602 SMBJ HV SERIES Taiwan Semiconductor No tR eco mm en de d CREAT BY ART Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC's terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. Version: E1602