CREAT BY ART
- Low profile package
- Ideal for automated placement
- Glass passivated junction
- Excellent clamping capability
- Halogen-free according to IEC 61249-2-21
Molding compound: UL flammability classification rating 94V-0
Packing code with suffix "G" means green compound (halogen-free)
Terminal: Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test
SYMBOL UNIT
P
PK
W
P
D
W
T
J
°C
T
STG
°C
Note 2: For V
WM
≤250V only
Devices for Bipolar Applications
2. Electrical characteristics apply in both directions
PART NO.
Note 1: "xxxx" defines voltage from 180V (SMBJ180A) to 440V (SMBJ440A)
PART NO.
SMBJ200A
Version: E1602
3,000 / 13" Plastic reel
EXAMPLE
SMBJ200A R5G R5 G Green compound
EXAMPLE
PART NO. PACKING CODE PACKING CODE
SUFFIX DESCRIPTION
SMBJxxxx
(Note 1)
R5
G
SMB 850 / 7" Plastic reel
R4 SMB 3,000 / 13" Paper reel
M4 SMB
Note 1: Non-repetitive current pulse per fig. 3 and derated above T
A
=25°C per fig. 2
Operating junction temperature range - 55 to +150
1. For bidirectional use CA suffix
ORDERING INFORMATION
PACKING CODE PACKING CODE
SUFFIX PACKAGE PACKING
Maximum instantaneous forward voltage at 50 A for
Unidirectional only V
F
5V
Storage temperature range - 55 to +150
Steady state power dissipation 5
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load (Note 2) I
FSM
100 A
Polarity: Indicated by cathode band
Weight: 0.09 g (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T
A
=25°C unless otherwise noted)
PARAMETER VALUE
Peak power dissipation at T
A
=25°C, tp=1ms (Note 1) 600
SMBJ HV SERIES
Taiwan Semiconductor
600W, 180V - 440V Surface Mount Transient Voltage Suppressor
FEATURES
- Fast response time: Typically less than 1.0ps
Moisture sensitivity level: level 1, per J-STD-020
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
DO-214AA (SMB)
MECHANICAL DATA
Case: DO-214AA (SMB)
Not Recommended
CREAT BY ART
(T
A
=25°C unless otherwise noted)
Version: E1602
RATINGS AND CHARACTERISTICS CURVES
Taiwan Semiconductor
SMBJ HV SERIES
0
25
50
75
100
125
0 25 50 75 100 125 150 175 200
PEAK PULSE POWER(PPP) OR CURRENT (IPP) A
DERATING IN PERCENTAGE (%)
TA, AMBIENT TEMPERATURE (°C)
FIG.2 PULSE DERATING CURVE
10
100
1 10 100
IFSM, PEAK FORWARD SURGE CURRENT (A)
NUMBER OF CYCLES AT 60 Hz
FIG. 4 MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
8.3ms single half sine wave
For VWM ≤ 250V only
0
20
40
60
80
100
120
140
00.511.522.533.54
PEAK PULSE CURRENT (%)
t, TIME ms
FIG. 3 CLAMPING POWER PULSE WAVEFORM
td
Peak value
IPPM
tr=10
μ
s
Half value-IPPM/2
10/1000μs waveform
as defined by R.E.A.
Pulse width(td) is defined
as the point where the peak
current decays to 50% of IPPM
10
100
1000
10000
1 10 100
CJ, JUNCTION CAPACITANCE (pF) A
V(BR), BREAKDOWN VOLTAGE (V)
FIG. 5 TYPICAL JUNCTION CAPACITANCE
f=1.0MHz
Vsig=50mVp-p
Measured at
zero bias
Measured at
VWM
0.1
1
10
100
0.1 1 10 100 1000 10000
PPPM, PEAK PULSE POWER, KW
tp, PULSE WIDTH, (μs)
FIG. 1 PEAK PULSE POWER RATING CURVE
Non-repetitive
pulse waveform
shown in fig.3
Not Recommended
CREAT BY ART
Test
Current
Working
Peak
Reverse
Voltage
Maximum
Reverse
Leakage
@ V
WM
Maximum
Peak
Pulse
Current
Maximum
Clamping
Voltage
@ I
PPM
I
T
V
WM
I
R
I
PPM
Vc
mA V μAA V
Min. Max. (Note 2)
SMBJ180A SMBJ180CA PT PTC 201 222 1 180 1 2.1 292
SMBJ200A SMBJ200CA PV PVC 224 247 1 200 1 1.2 324
SMBJ220A SMBJ220CA PX PXC 246 272 1 220 1 1.1 356
SMBJ250A SMBJ250CA PZ PZC 279 309 1 250 1 1.0 405
SMBJ300A SMBJ300CA QE QEC 335 371 1 300 1 0.8 486
SMBJ350A SMBJ350CA QG QGC 391 432 1 350 1 0.7 567
SMBJ400A SMBJ400CA QK QKC 447 494 1 400 1 0.6 648
SMBJ440A SMBJ440CA QM QMC 492 543 1 440 1 0.6 713
Notes:
1. V
BR
measure after I
T
applied for 300μs, I
T
=square wave pulse or equivalent.
2. Surge current waveform per figure. 3 and derate per figure. 2.
Version: E1602
V
SMBJ HV SERIES
Taiwan Semiconductor
Device
Device
Marking
Code
UNI BI UNI BI
Breakdown
Voltage
(Note 1)
V
BR
Not Recommended
Min Max Min Max
A 1.95 2.20 0.077 0.087
B 4.06 4.60 0.160 0.181
C 3.30 3.94 0.130 0.155
D 2.13 2.68 0.084 0.106
E 0.76 1.52 0.030 0.060
F 5.21 5.59 0.205 0.220
G - 0.203 - 0.008
H 0.152 0.305 0.006 0.012
P/N = Device Marking Code
G = Green Compound
YW = Date Code
F = Factory Code
Note: Cathode band for uni-directional products only
Version: E1602
E 6.8 0.268
2.5 0.098
C 4.3 0.169
D 1.8 0.071
MARKING DIAGRAM
DO-214AA (SMB)
SUGGESTED PAD LAY OUT
Symbol Unit (mm) Unit (inch)
A 2.3 0.091
B
SMBJ HV SERIES
Taiwan Semiconductor
PACKAGE OUTLINE DIMENSIONS
DIM. Unit (mm) Unit (inch)
Not Recommended
CREAT BY ART
assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, to
any intellectual property rights is granted by this document. Except as provided in TSC's terms and conditions of
sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty,
relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose,
merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify TSC for any damages resulting from such improper use or sale.
Version: E1602
SMBJ HV SERIES
Taiwan Semiconductor
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,
Not Recommended
