53 RadHard MSI Logic
UT54ACS85/UT54ACTS85
RADIATION HARDNESS SPECIFICATIONS 1
Notes:
1. Logic will not latchup during radiation exposure within the limits defined in the table.
2. Device storage elements are immune to SEU affects.
ABSOLUTE MAXIMUM RATINGS
Note:
1. Stresses outside the listed absolute maximum ratings may cause permanent damage to the device. This is a stress rating only, functional operation of the device
at these or any other conditions beyond limits indicated in the operational sections is not recommended. Exposure to absolute maximum rating conditions for
extended periods may affect device reliability.
RECOMMENDED OPERATING CONDITIONS
PARAMETER LIMIT UNITS
Total Dose 1.0E6 rads(Si)
SEU Threshold 280 MeV-cm2/mg
SEL Threshold 120 MeV-cm2/mg
Neutron Fluence 1.0E14 n/cm2
SYMBOL PARAMETER LIMIT UNITS
VDD Supply voltage -0.3 to 7.0 V
VI/O Voltage any pin -.3 to VDD +.3 V
TSTG Storage Temperature range -65 to +150 C
TJMaximum junction temperature +175 C
TLS Lead temperature (soldering 5 seconds) +300 C
JC Thermal resistance junction to case 20 C/W
IIDC input current 10 mA
PDMaximum power dissipation 1W
SYMBOL PARAMETER LIMIT UNITS
VDD Supply voltage 4.5 to 5.5 V
VIN Input voltage any pin 0 to VDD V
TCTemperature range -55 to + 125 C