© 2006 IXYS All rights reserved
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified) Min. Typ. Max.
BVDSS VGS = 0 V, ID = 250 μA 200 V
VGS(th) VDS = VGS, ID = 4 mA 2.5 5.0 V
IGSS VGS = ±20 VDC, VDS = 0 ±100 nA
IDSS VDS = VDSS 25 μA
VGS = 0 V TJ = 125°C 250 μA
RDS(on) VGS = 10 V, ID = 37 A 36 mΩ
Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %
Symbol Test Conditions Maximum Ratings
VDSS TJ= 25°C to 175°C 200 V
VDGR TJ= 25°C to 175°C; RGS = 1 MΩ200 V
VGS Continuous ±20 V
VGSM Transient ±30 V
ID25 TC= 25°C35A
IDM TC= 25°C, pulse width limited by TJM 200 A
IAR TC= 25°C60A
EAR TC= 25°C40mJ
EAS TC= 25°C 1.0 J
dv/dt IS≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ V DSS, 10 V/ns
TJ≤ 150°C, RG = 4 Ω
PDTC= 25°C 120 W
TJ-55 ... +175 °C
TJM 175 °C
Tstg -55 ... +150 °C
TL1.6 mm (0.062 in.) from case for 10 s 300 °C
VISOL 50/60 Hz, RMS, IISOL ≤ 1 mA, t = 1 minute 2500 V~
FCMounting Force 11..65 / 2.5..15 N/lb
Weight 3g
G = Gate D = Drain
S = Source
DS99243E(03/06)
PolarHTTM HiPerFET
Power MOSFET
ISOPLUS220TM
(Electrically Isolated Back Surface)
VDSS = 200 V
ID25 =35A
RDS(on) =36m
ΩΩ
ΩΩ
Ω
trr ≤≤
≤≤
≤200 ns
N-Channel Enhancement Mode
Fast Recovery Diode, Avalanche
Rated
IXFC 74N20P
GDS
ISOPLUS 220TM
E153432
Isolated back surface*
Features
zSilicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
zLow drain to tab capacitance(<35pF)
zLow RDS (on) HDMOSTM process
zRugged polysilicon gate cell structure
zUnclamped Inductive Switching (UIS)
rated
zFast intrinsic Rectifier
Applications
zDC-DC converters
zBattery chargers
zSwitched-mode and resonant-mode
power supplies
zDC choppers
zAC motor control
Advantages
zEasy assembly: no screws, or isolation
foils required
zSpace savings
zHigh power density
zLow collector capacitance to ground
(low EMI)
IXYS reserves the right to change limits, test conditions, and dimensions.
IXFC 74N20P
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min. Typ. Max.
gfs VDS= 10 V; ID = 37 A, pulse test 30 44 S
Ciss 3300 pF
Coss VGS = 0 V, VDS = 25 V, f = 1 MHz 770 pF
Crss 190 pF
td(on) 23 ns
trVGS = 10 V, VDS = 0.5 VDSS, ID = 74 A 21 ns
td(off) RG = 4 Ω (External) 60 ns
tf21 ns
Qg(on) 107 nC
Qgs VGS= 10 V, VDS = 0.5 VDSS, ID = 37 A 24 nC
Qgd 52 nC
RthJC 1.25K/W
RthCS 0.21 K/W
Source-Drain Diode Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol Test Conditions Min. Typ. Max.
ISVGS = 0 V 74 A
ISM Repetitive 180 A
VSD IF = IS, VGS = 0 V, 1.5 V
Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %
trr IF = 25 A, -di/dt = 100 A/μs 200 ns
QRM VR = 100 V, VGS = 0 V 0.4 μC
IRM 6A
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585
one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2 6,759,692
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2
ISOPLUS220TM (IXFC) Outline
Ref: IXYS CO 0177 R0
Note:
Bottom heatsink (Pin 4) is
electrically isolated from Pin
1,2, or 3.
© 2006 IXYS All rights reserved
IXFC 74N20P
Fig. 6. Drain Curr ent vs. Cas e
Temperature
0
5
10
15
20
25
30
35
40
-50 -25 0 25 50 75 100 125 150 175
TC - Degrees Centigrade
I D - Amperes
Fig. 2. Extended Output Cha rac teristics
@ 25
º
C
0
20
40
60
80
100
120
140
160
180
200
0 2 4 6 8 101214161820
VD S - V olts
I D - Am peres
V
GS
= 10V
9V
7V
6V
8V
5V
Fig. 3. Output Charac terist ics
@ 150
º
C
0
10
20
30
40
50
60
70
80
01234567
VD S - V olts
I D - Amperes
V
GS
= 10 V
9V
8V
5V
6V
7V
Fig. 1. Output Char acter istics
@ 25
º
C
0
10
20
30
40
50
60
70
80
0 0.5 1 1.5 2 2.5 3 3.5
VD S - Volts
I D - Amperes
V
GS
= 10V
9V
8V
7V
6V
5V
Fig. 4. RDS(on
)
Normalized to 0.5 ID25
Value vs . Junction Temper ature
0.6
1
1.4
1.8
2.2
2.6
3
-50 -25 0 25 50 75 100 125 150 175
TJ
- Degr ees Centigrade
R D S ( o n ) - Normalize d
I
D
= 74A
I
D
= 37 A
V
GS
= 10 V
Fig. 5. RDS(on) Normalized to
0.5 ID25 Value v s. ID
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
0 20 40 60 80 100 120 140 160 180 200
I D - Amperes
R D S ( o n ) - Normalized
T
J
= 175ºC
T
J
= 25 ºC
V
GS
= 10 V
V
GS
= 15 V
IXYS reserves the right to change limits, test conditions, and dimensions.
IXFC 74N20P
Fig. 11. Capacitance
100
1000
10000
0 5 10 15 20 25 30 35 40
V
D S
- Volts
Capacitance - picoFarads
Ciss
Coss
Crss
f = 1MHz
Fig. 10. Gate Charge
0
1
2
3
4
5
6
7
8
9
10
0 102030405060708090100110
Q
G
- nanoCoulombs
V
G S
- Vo l t s
V
DS
= 100V
I
D
= 37 A
I
G
= 10 mA
Fig. 7. Input Admittanc e
0
10
20
30
40
50
60
70
80
90
100
3.544.555.566.57
V
G S
- Volts
I
D
- Amp ere s
T
J
= 150ºC
25ºC
-40ºC
Fig. 8. Transconducta n ce
0
10
20
30
40
50
60
0 20406080100120
I
D
- Amperes
g
f s
- Siem ens
T
J
= -4 0ºC
25ºC
150ºC
Fig. 9. Source Current vs.
Source-To-Drain Voltage
0
20
40
60
80
100
120
140
160
180
200
0.4 0.6 0.8 1 1.2 1.4
V
S D
- Volts
I
S
- Amp ere s
T
J
= 150ºC
T
J
= 25ºC
Fig. 12. F orward-Bias
Safe Operating Area
1
10
100
1000
10 100 1000
V
D S
- Volts
I
D
- Amperes
100µs
1ms
DC
T
J
= 175ºC
T
C
= 2 5ºC
R
DS(on)
Lim it
10ms
25
µ
s
Fi g. 12. Forw ard-Bi as
Safe Operating Area
1
10
100
1000
1 10 100 1000
VD S - Volts
I D - Amperes
100µs
1ms
DC
TJ = 175ºC
TC = 25ºC
RDS(on) Lim it
10ms
25
µ
s
Fi g. 12. Forw ard-Bias
Safe Ope rating Area
1
10
100
1000
1 10 100 1000
VD S - V olts
I D - Amperes
100µs
1ms
DC
TJ = 175ºC
TC = 25ºC
RDS(on) Lim it
10ms
25
µ
s
© 2006 IXYS All rights reserved
IXFC 74N20P
Fig. 13. Maximum Transient Thermal Resistance
0.01
0.10
1.00
10.00
0.1 1 10 100 1000
Pulse Width - milliseconds
R( t h ) J C - ºC / W
IXYS REF: T_74N20P (6S) 6-15-05-D.xls
