MJ802
SI LICON NPN POWER TRANSISTOR
■STMicroelec tronic s PREF ERRE D
SALESTYPE
DESCRIPTION
The MJ802 is a silicon Epitaxial-Base power
transistor mounted in Jedec TO-3 metal case. It
is intended for general purpose power amplifier
and switching applications.
®
October 2003
A BSO LUT E MAX IMU M RAT IN GS
Symbol Parameter Value Unit
VCEO Collector-emitter Voltage (IB = 0) 90 V
VCBO Collector-base Voltage (IE = 0) 100 V
VEBO Emitter-Base Voltage (IC = 0) 4 V
ICCollector Current 30 A
IBBase Current 7.5 A
Ptot Total Dissipation at Tc ≤ 25 oC200 W
Tstg Storage Temperature -65 to 200 oC
TjMax. Operating Junction Temperature 200 oC
12
TO-3
INTERNAL SCHEMATIC DIAGRAM
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THERMAL DATA
Rthj-case Thermal Resistance Junction-case Max 0.875 oC/W
ELE CT RICAL CHAR ACT ERIST I CS (Tcase = 25 oC unless otherwise specif ied)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
ICBO Collector Cut-off
Current (IE = 0) VCB = 100 V
VCB = 100 V Tcase = 150 oC1
5mA
mA
IEBO Emitter Cut-off Current
(IC = 0) VEB = 4 V 1 mA
VCEO(sus)∗Collector-Emitter
Sustaining Voltage
(IB = 0)
IC = 200 mA 90 V
VCER(sus)∗Collector-emitter
Sustaining Voltage
(RBE = 100 Ω)
IC = 200 mA 100 V
VCE(sat)∗Collector-Emitter
Saturation Voltage IC = 7.5 A IB = 0.75 A 0.8 V
VBE(sat)∗Base-Emitter
Saturation Voltage IC = 7.5 A IB = 0.75 A 1.3 V
VBE∗Base-Emitter Voltage IC = 7.5 A VCE = 2 V 1.3 V
hFE∗DC Current Gain IC = 7.5 A VCE = 2 V 25 100
fTTransition Frequency IC = 1 A VCE = 10 V
f = 1 MHz 2 MHz
∗ P ulsed: P ulse durat ion = 300 µs, d uty cy cle 1.5 %
MJ802
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DIM. mm inch
MIN. TYP. MAX. MIN. TYP. MAX.
A 11.00 13.10 0.433 0.516
B 0.97 1.15 0.038 0.045
C 1.50 1.65 0.059 0.065
D 8.32 8.92 0.327 0.351
E 19.00 20.00 0.748 0.787
G 10.70 11.10 0.421 0.437
N 16.50 17.20 0.649 0.677
P 25.00 26.00 0.984 1.023
R 4.00 4.09 0.157 0.161
U 38.50 39.30 1.515 1.547
V 30.00 30.30 1.187 1.193
E
B
R
C
D
A
P
G
N
V
U
O
P003F
TO-3 MECHANICAL DATA
MJ802
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of use of such inform ation nor for any infringe ment o f patents or other rig hts o f th ird part ies which may resu lt from its use . No li cen se is
granted by implication or otherwise under any patent or patent rights of STM icroelectronics. Specif ication mentioned in this publication are
subject t o cha nge without notice. This publication supersedes and r ep laces all information previously s upplied. STMicroelectronics pr oducts
ar e not aut horized for use as critical compo nents in life support devices or systems without express written approval of S TMicroel ectronics.
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MJ802
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