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SENSITRON
SEMICONDUCTOR
TECHNICAL DATA
DATASHEET 4298, Rev-
SILICON ULTRA-FAST RECOVERY EPITAXIAL RECTIFIER DIE
Applications:
• Switching Power Supply • Converters • Free-Wheeling Diodes • Polarity Protection Diode
Features:
• Glasspassivated Epitaxial Diode with Mesa Structure
• Soft Reverse Recovery at Low and High Temperature
• Low Forward Voltage Drop and Low Reverse Current
• Electrically and Mechanically Stable during and after Packaging
Maximum Ratings: All ratings are at TA = 25oC unless otherwise specified
Characteristics Symbol Condition Max. Units
Peak Inverse Voltage VRWM - 600 V
Max. Output Current IO 50% duty cycle, rectangular
wave form; TA = 25 oC
30 A
Non-repetitive Peak Forward
Current
IFSM(1) t = 8.3 ms, sine waveform; TA
= 25 oC
200 A
Max. Junction Temperature TJ - -65 to +175 °C
Max. Storage Temperature Tstg - -65 to +175 °C
Reverse Recovery Time trr I
F=0.5A, IR=1.0A, IRM=0.25A 30 nS
Electrical Characteristics:
Characteristics Symbol Condition Max. Units
Max. Forward Voltage Drop VF 30A, pulse, TJ = 25 °C 2.6 V
Max. Reverse Current IR1 VR = VRWM, pulse(2), TJ = 25°C 50.0 µA
I
R2 VR = VRWM, pulse(2), TJ = 150°C500 µA
(1) in TO package
(2) Pulse test: tp = 300 µs, duty cycle ≤ 2.0%
Mechanical Dimensions: In Inches (mm)
SD165UF600A30
SD165UF600B30
Bottom side metalization: Ti/Ni/Ag - 30 kÅ minimum.
Top side metalization: Al – 25 kÅ minimum or
Ti/Ni/Ag - 30 kÅ minimum
Bottom side is cathode, top side is anode.
Cathode
Anode
0.014 ± 0.001
0.356 ± 0.025
ANODE 0.165 ± 0.003
0.131 ± 0.003
Part number call out:
SD165UF600A30 for Al top – 25 kÅ minimum
SD165UF600B30 for Ti/Ni/Ag top – 30 kÅ minimum
Bottom side metallization: Ti/Ni/Ag – 30 kÅ minimum
Top – Anode, Bottom - Cathode