1
Rectifier Device Data
. . . using the Schottky Barrier principle with a platinum barrier metal. These
state–of–the–art devices have the following features:
•Guardring for Stress Protection
•Low Forward Voltage
•150°C Operating Junction Temperature
•Guaranteed Reverse Avalanche
•Epoxy Meets UL94, VO at 1/8″
Mechanical Characteristics:
•Case: Epoxy, Molded
•Weight: 1.9 grams (approximately)
•Finish: All External Surfaces Corrosion Resistant and Terminal Leads are
Readily Solderable
•Lead Temperature for Soldering Purposes: 260°C Max. for 10 Seconds
•Shipped 50 units per plastic tube
•Marking: B2035, B2045
MAXIMUM RATINGS
Rating
Symbol
MBR2035CT
MBR2045CT
Unit
Rating
Symbol
MBR2035CT
MBR2045CT
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
35 45 Volts
Average Rectified Forward Current (Rated VR)
TC = 135°CIF(AV) 20 20 Amps
Peak Repetitive Forward Current Per Diode Leg
(Rated VR, Square Wave, 20 kHz) TC = 135°CIFRM 20 20 Amps
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions halfwave, single phase, 60 Hz) IFSM 150 150 Amps
Peak Repetitive Reverse Surge Current
(2.0 µs, 1.0 kHz) See Figure 11 IRRM 1.0 1.0 Amp
Operating Junction Temperature TJ
*
65 to +150
*
65 to +150 °C
Storage Temperature Tstg
*
65 to +175
*
65 to +175 °C
Voltage Rate of Change (Rated VR) dv/dt 1000 1000 V/µs
THERMAL CHARACTERISTICS
Maximum Thermal Resistance, Junction to Case RθJC 2.0 2.0 °C/W
ELECTRICAL CHARACTERISTICS
Maximum Instantaneous Forward Voltage (1)
(iF = 10 Amps, TC = 125°C)
(iF = 20 Amps, TC = 125°C)
(iF = 20 Amps, TC = 25°C)
vF0.57
0.72
0.84
0.57
0.72
0.84
Volts
Maximum Instantaneous Reverse Current (1)
(Rated dc Voltage, TC = 125°C)
(Rated dc Voltage, TC = 25°C)
iR15
0.1 15
0.1
mA
(1) Pulse Test: Pulse Width = 300 µs, Duty Cycle ≤2.0%.
SWITCHMODE is a trademark of Motorola, Inc.
Preferred devices are Motorola recommended choices for future use and best overall value.
Motorola, Inc. 1996
Order this document
by MBR2035CT/D
SEMICONDUCTOR TECHNICAL DATA
1
32, 4
SCHOTTKY BARRIER
RECTIFIERS
20 AMPERES
35 and 45 VOLTS
CASE 221A–06
TO–220AB
PLASTIC
MBR2045CT is a
Motorola Preferred Device
1
3
4
2
Rev 2
2Rectifier Device Data
Figure 1. Maximum Forward Voltage
1.2
vF, INSTANTANEOUS VOLTAGE (VOLTS)
100
70
5.0
10
3.0
5.0 150
VR, REVERSE VOLTAGE (VOLTS)
10
1.0
0.1
0.01
0.001
NUMBER OF CYCLES AT 60 Hz
101.0
200
100
50
30
20 3.010
iF, INSTANTANEOUS FORWARD CURRENT (AMPS)
1.0
0.60.2 0.4 0.8 1.0 1.4
, REVERSE CURRENT (mA)IR
20 3025
100
2.0 100
70
IFSM, PEAK HALF–W AVE CURRENT (AMPS)
2.0
20
0.1
0.5
0.7
30
7.0
0.3
50
35 40 5045
TJ = 150
°
C
Figure 2. Typical Forward Voltage
Figure 3. Maximum Reverse Current Figure 4. Maximum Surge Capability
7.05.0 3020 7050
TJ = 150
°
C
125
°
C
100
°
C
75
°
C
25
°
C
0.2
1.2
vF, INSTANTANEOUS VOLT AGE (VOLTS)
100
70
5.0
10
3.0
iF, INSTANTANEOUS FORWARD CURRENT (AMPS)
1.0
0.60.2 0.4 0.8 1.0 1.4
2.0
20
0.1
0.5
0.7
30
7.0
0.3
50
TJ = 150
°
C
0.2
100
°
C25
°
C100
°
C25
°
C
3
Rectifier Device Data
(CAPACITIVE LOAD)IPK
IAV
+
5
110
TC, CASE TEMPERATURE (
°
C)
20
15
10
5.0
0
TA, AMBIENT TEMPERATURE (
°
C)
800
32
16
8.0
4.0
040120
, A VERAGE FORWARD CURRENT (AMPS)IF(AV)
130 140
40
20 160
12
150 160
Figure 5. Current Derating, Infinite Heatsink Figure 6. Current Derating, R
q
JA = 16°C/W
60 120100 140
4.00
IF(AV), A VERAGE FORW ARD CURRENT (AMPS)
16
10
8.0
4.0
0
TA, AMBIENT TEMPERATURE (
°
C)
800
10
8.0
4.0
2.0
0408.0
, AVERAGE FORW ARD POWER DISSIPATION (W ATTS)P F(AV)
12 2016
20
20 160
6.0
IF(AV), A VERAGE FORW ARD CURRENT (AMPS)
24 3228
Figure 7. Forward Power Dissipation Figure 8. Current Derating, Free Air
60 120100 140
35
30
25
, A VERAGE FORWARD CURRENT (AMPS)IF(AV)
28
20
24
6.0
2.0
18
14
12
r(t), TRANSIENT THERMAL RESIST ANCE
(NORMALIZED)
0.01 0.1 1.0 10 100
0.05
0.03
0.02
0.01
0.1
t, TIME (ms)
0.5
0.3
0.2
1.0
Ppk Ppk
tp
t1TIME
DUTY CYCLE, D = tp/t1
PEAK POWER, Ppk, is peak of an
equivalent square power pulse.
∆
TJL = Ppk
•
R
θ
JL [D + (1 – D)
•
r(t1 + tp) + r(tp) – r(t1)] where:
∆
TJL = the increase in junction temperature above the lead temperature.
r(t) = normalized value of transient thermal resistance at time, t, i.e.:
r(t1 + tp) = normalized value of transient thermal resistance at time,
t1 + tp, etc.
1000
Figure 9. Thermal Response
dc
TJ = 150
°
C
SINE W AVE
RESISTIVE LOAD
SQUARE
WAVE
(CAPACITIVE LOAD)IPK
IAV
+
5
20
10
RATED VOLTAGE APPLIED
dc
SQUARE
WAVE
20
10
IPK
IAV
+
p
(RESISTIVE LOAD)
(CAPACITIVE LOAD)IPK
IAV
+
20,10,5
RATED VOLTAGE APPLIED
dc
SQUARE
WAVE
IPK
IAV
+
p
(RESISTIVE LOAD)
dc
SQUARE
WAVE
IPK
IAV
+
p
(RESISTIVE LOAD)
(CAPACITIVE LOAD)IPK
IAV
+
20,10,5
RATED VOLTAGE APPLIED
R
q
JA = 60
°
C/W
0.07
0.7
4Rectifier Device Data
HIGH FREQUENCY OPERATION
Since current flow in a Schottky rectifier is the result of majority
carrier conduction, it is not subject to junction diode forward and
reverse recovery transients due to minority carrier injection and
stored charge. Satisfactory circuit analysis work may be performed
by using a model consisting of an ideal diode in parallel with a
variable capacitance. (See Figure 10.)
Rectification efficiency measurements show that operation will
be satisfactory up to several megahertz. For example, relative
waveform rectification efficiency is approximately 70 percent at
2.0 MHz, e.g., the ratio of dc power to RMS power in the load is
0.28 at this frequency, whereas perfect rectification would yield
0.406 for sine wave inputs. However, in contrast to ordinary
junction diodes, the loss in waveform efficiency is not indicative of
power loss; it is simply a result of reverse current flow through the
diode capacitance, which lowers the dc output voltage.
2.0
µ
s
1.0 kHz
12 V 100
VCC 12 Vdc
2N2222
CURRENT
AMPLITUDE
ADJUST
0–10 AMPS
100
CARBON
2N6277
1.0 CARBON
1N5817
D.U.T.
2.0 k
Ω
+150 V, 10 mAdc
4.0
µ
F
+
VR, REVERSE VOLT AGE (VOLTS)
0.5
1500
1000
500
300
150 0.10.05 50
700
C, CAPACITANCE (pF)
Figure 10. Capacitance
0.2 2.01.0 5.0
200
MAXIMUM
TYPICAL
10 20
Figure 11. Test Circuit for dv/dt and
Reverse Surge Current
5
Rectifier Device Data
PACKAGE DIMENSIONS
CASE 221A–06
(TO–220AB)
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.570 0.620 14.48 15.75
B0.380 0.405 9.66 10.28
C0.160 0.190 4.07 4.82
D0.025 0.035 0.64 0.88
F0.142 0.147 3.61 3.73
G0.095 0.105 2.42 2.66
H0.110 0.155 2.80 3.93
J0.018 0.025 0.46 0.64
K0.500 0.562 12.70 14.27
L0.045 0.060 1.15 1.52
N0.190 0.210 4.83 5.33
Q0.100 0.120 2.54 3.04
R0.080 0.110 2.04 2.79
S0.045 0.055 1.15 1.39
T0.235 0.255 5.97 6.47
U0.000 0.050 0.00 1.27
V0.045 ––– 1.15 –––
Z––– 0.080 ––– 2.04
B
Q
H
Z
L
V
G
N
A
K
F
123
4
D
SEATING
PLANE
–T–
C
S
T
U
R
J
ISSUE Y
6Rectifier Device Data
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the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
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MBR2035CT/D
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