MDD95-08N1B Standard Rectifier Module VRRM = 2x 800 V I FAV = 120 A VF = 1.13 V Phase leg Part number MDD95-08N1B Backside: isolated 2 1 3 Features / Advantages: Applications: Package: TO-240AA Package with DCB ceramic Improved temperature and power cycling Planar passivated chips Very low forward voltage drop Very low leakage current Diode for main rectification For single and three phase bridge configurations Supplies for DC power equipment Input rectifiers for PWM inverter Battery DC power supplies Field supply for DC motors Isolation Voltage: 3600 V~ Industry standard outline RoHS compliant Soldering pins for PCB mounting Base plate: DCB ceramic Reduced weight Advanced power cycling IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20130702a MDD95-08N1B Ratings Rectifier Conditions Symbol VRSM Definition max. non-repetitive reverse blocking voltage TVJ = 25C max. 900 Unit V VRRM max. repetitive reverse blocking voltage TVJ = 25C 800 V IR reverse current VF forward voltage drop min. typ. VR = 800 V TVJ = 25C 200 A VR = 800 V TVJ = 150C 15 mA I F = 150 A TVJ = 25C 1.20 V 1.43 V 1.13 V I F = 300 A TVJ = 125 C I F = 150 A I F = 300 A I FAV average forward current TC = 100C 180 sine I F(RMS) RMS forward current VF0 threshold voltage rF slope resistance R thJC thermal resistance junction to case for power loss calculation only R thCH thermal resistance case to heatsink Ptot total power dissipation I FSM max. forward surge current It CJ value for fusing junction capacitance IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved 1.46 V T VJ = 150 C 120 A 180 A TVJ = 150 C 0.75 V 1.95 m 0.26 K/W K/W 0.20 TC = 25C 481 W t = 10 ms; (50 Hz), sine TVJ = 45C 2.80 kA t = 8,3 ms; (60 Hz), sine VR = 0 V 3.03 kA t = 10 ms; (50 Hz), sine TVJ = 150 C 2.38 kA t = 8,3 ms; (60 Hz), sine VR = 0 V 2.57 kA t = 10 ms; (50 Hz), sine TVJ = 45C 39.2 kAs t = 8,3 ms; (60 Hz), sine t = 10 ms; (50 Hz), sine VR = 0 V 38.1 kAs TVJ = 150 C 28.3 kAs t = 8,3 ms; (60 Hz), sine VR = 0 V VR = 400 V; f = 1 MHz TVJ = 25C 27.5 kAs 116 Data according to IEC 60747and per semiconductor unless otherwise specified pF 20130702a MDD95-08N1B Package Ratings TO-240AA Symbol I RMS Definition Conditions RMS current per terminal Tstg storage temperature T VJ virtual junction temperature min. typ. max. 200 Unit A -40 125 C -40 150 C Weight 90 MD mounting torque MT terminal torque d Spp/App d Spb/Apb VISOL creepage distance on surface | striking distance through air t = 1 minute 2.5 4 2.5 4 Nm Nm terminal to terminal 13.0 9.7 mm terminal to backside 16.0 16.0 mm 3600 V 3000 V t = 1 second isolation voltage g 50/60 Hz, RMS; IISOL 1 mA Circuit Diagram Part Number YYYYWWx Date Code FKT Production Code Ordering Standard Data Matrix Part Number MDD95-08N1B Equivalent Circuits for Simulation I V0 R0 Marking on Product MDD95-08N1B * on die level Delivery Mode Box Code No. 453102 T VJ = 150 C Rectifier V 0 max threshold voltage 0.75 V R 0 max slope resistance * 0.76 m IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved Quantity 6 Data according to IEC 60747and per semiconductor unless otherwise specified 20130702a MDD95-08N1B Outlines TO-240AA 2 IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved 1 3 Data according to IEC 60747and per semiconductor unless otherwise specified 20130702a MDD95-08N1B Rectifier 250 105 3000 VR = 0 V 50 Hz, 80% V RRM 2500 DC 180 sin 120 60 30 200 2000 IFSM 150 I2t TVJ = 45C IFAVM TVJ = 45C 1500 [A] 100 [A2s] [A] 1000 TVJ = 150C TVJ = 150C 50 500 0 10-3 104 10-2 10-1 100 101 0 1 2 3 6 8 10 0 t [s] Fig. 1 Surge overload current ITSM, IFSM: Crest value, t: duration 100 150 200 Fig. 3 Maximum forward current at case temperature Fig. 2 I2t versus time (1-10 ms) 200 50 TC [C] t [ms] RthJA [K/W] 0.4 0.6 150 0.8 1 PT 1.2 100 1.5 [W] 2 DC 180 sin 120 60 30 50 0 0 50 100 150 3 0 50 ITAVM, IFAVM [A] 100 150 200 TA [C] Fig. 4 Power dissipation vs. onstate current and ambient temperature (per diode) 800 RthKA [K/W] 0.1 0.15 600 0.2 R L 0.3 Ptot 0.4 400 0.5 [W] 0.6 0 0.7 Circuit B2 2x MDD95 200 0 50 100 150 200 250 IdAVM [A] 0 50 100 150 200 TA [C] Fig. 6 Single phase rectifier bridge: Power dissipation versus direct output current and ambient temperature; R = resistive load,L = inductive load IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20130702a MDD95-08N1B Rectifier 1000 RthJA [KW] 0.03 0.06 800 0.08 0.12 Ptot 600 [W] 400 0.15 0.3 0.5 Circuit B6 3x MDD95 200 0 0 100 200 300 0 50 100 IDAVM [A] 150 200 TA [C] Fig. 6 Three phase rectifier bridge: Power dissipation versus direct output current and ambient temperature 0.4 RthJC for various conduction angles d: d RthJC [K/W] 30 60 120 0.3 180 DC ZthJC 0.2 [K/W] DC 0.26 180 0.28 120 0.30 60 0.34 30 0.38 Constants for ZthJC calculation: i Rthi [K/W] 0.1 0 10-3 10-2 10-1 100 101 102 ti [s] 1 0.013 0.0012 2 0.072 0.0470 3 0.175 0.3940 103 t [s] Fig. 7 Transient thermal impedance junction to case (per diode) RthJK for various conduction angles d: d RthJC [K/W] DC 0.46 180 0.48 120 0.50 60 0.54 30 0.58 0.6 30 0.5 60 120 180 0.4 DC ZthJK 0.3 Constants for ZthJC calculation: [K/W] 0.2 i Rthi [K/W] 1 2 3 4 0.1 0 10-3 10-2 10-1 100 101 102 103 0.013 0.072 0.175 0.200 ti [s] 0.0012 0.0470 0.3940 1.3200 104 t [s] Fig. 8 Transient thermal impedance junction to heatsink (per thyristor) IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20130702a