©2000 Fairchild Semiconductor International Rev. A, February 2000
BD234/236/238
PNP Epitaxial Si licon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Electrical Characteristics TC=25°C unless otherwise noted
* Pulse Test: PW=300µs, duty Cycle=1.5% Pulsed
Symbol Parameter Value Units
VCBO Collector-Base Voltage : BD234
: BD236
: BD238
- 45
- 60
- 100
V
V
V
VCEO Collector-Emitter Voltage: BD234
: BD236
: BD238
- 45
- 60
- 80
V
V
V
VCER Collector-Emitter Voltage: BD234
: BD236
: BD238
- 45
- 60
- 100
V
V
V
VEBO Emitter-Base Volt age - 5 V
IC Collector Current (DC) - 2 A
ICP *Collector Current (Pulse) - 6 A
PC Collector Dissipation (TC=25°C) 25 W
TJ Junction Tempe rature 150 °C
TSTG Storage Temperature - 65 ~ 150 °C
Symbo l Param e ter Test Condition Min. Typ. Max. Units
VCEO(sus) * Collector-Emit ter Susta ining Voltage
: BD2 34
: BD2 36
: BD2 38
IC = - 100mA, IB = 0 - 45
- 60
- 80
V
V
V
ICBO Collector Cut-of f Current : BD2 34
: BD2 36
: BD2 38
VCB = - 45V, IE = 0
VCB = - 6 0V, IE = 0
VCB = - 1 00V, IE = 0
- 100
- 100
- 100
µA
µA
µA
IEBO Emitter Cut -of f Curr ent VEB = - 5V, IC = 0 - 1 mA
hFE * DC Current Gain VCE = - 2 V, IC = - 150mA
VCE = - 2 V, IC = - 1A 40
25
VCE(sat) * Collector-Emitter Saturation Voltage IC = - 1A , IB = - 0.1A - 0.6 V
VBE(on) * Base-Emitter ON Voltage VCE = - 2 V, IC = - 1A - 1.3 V
fT Current Gain Band width Product VCE = - 1 0V, IC = -250mA 3 MHz
BD234/236/238
Medium Power Linear and Switching
Applications
• Complement to BD 233/235/237 respectively
1TO-126
1. Emitter 2.Collector 3.Base
©2000 Fairchild Semiconductor International
BD234/236/238
Rev. A, February 2000
Typical Characteristics
Figure 1. DC current Gain Figure 2. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Figure 3. Safe Operating Area Figure 4. Power Derating
-0.01 -0.1 -1 -10
-1
-10
-100
-1000
VCE = -2V
hFE, DC CURRENT GAIN
IC[A], COLLECTOR CURRENT
-0.1 -1 -10
-0.01
-0.1
-1
-10
VCE(sat)
VBE(sat)
IC = 10 IB
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
IC[A], COLLECTOR CURRENT
-1 -10 -100
-0.1
-1
-10
IC MAX. (Continuous)
BD238
BD236
BD234
10µs
100
µ
s
1ms
DC
IC MAX. (Pulsed)
IC[A], COLLECTOR CURRENT
VCE[V], COL LECTOR- EMI TTE R VOLTAGE
0 25 50 75 100 125 150 175
0
5
10
15
20
25
30
35
40
PC[W], POWER DISSIPATION
TC[oC], CASE TEMPERATURE
Package Demensions
©2000 Fairchild Semiconductor International Rev. A, February 2000
BD234/236/238
Dimensions in Millimeters
3.25 ±0.20
8.00 ±0.30
ø3.20 ±0.10
0.75 ±0.10
#1
0.75 ±0.10
2.28TYP
[2.28±0.20] 2.28TYP
[2.28±0.20]
1.60 ±0.10
11.00 ±0.20
3.90 ±0.10
14.20MAX
16.10 ±0.20
13.06 ±0.30
1.75 ±0.20
(0.50)
(1.00)
0.50 +0.10
–0.05
TO-126
©2000 Fairchild Semiconductor International Rev. E
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