TQP7M9105 1W High Linearity Amplifier (R) Product Overview The TQP7M9105 is a high linearity, high gain 1W driver amplifier in industry standard, RoHS compliant, SOT-89 surface mount package. This InGaP/GaAs HBT delivers high performance across 0.05 to 1.5GHz while achieving +47dBm OIP3 and +30dBm P1dB at 940MHz while only consuming 220mA quiescent current. All devices are 100% RF and DC tested. The TQP7M9105 incorporates on-chip features that differentiate it from other products in the market. The amplifier has a dynamic active bias circuit that enable stable operation over bias and temperature variations and can provide a high linearity at back-off operation The TQP7M9105 is targeted for use as a driver amplifier in wireless infrastructure where high linearity, medium power, and high efficiency are required. The device an excellent candidate for transceiver line cards and high power amplifiers in current and next generation multi-carrier 3G/4G base stations. Functional Block Diagram 3-pin SOT-89 Package Key Features * * * * * * * * * Applications * * * * * GND 4 50-1500MHz +30dBm P1dB at 940MHz +47dBm Output IP3 at 940MHz 19.5dB Gain at 940MHz +5V Single Supply, 220mA Current Internal RF Overdrive Protection Internal DC Overvoltage Protection On Chip ESD Protection SOT-89 Package Repeaters BTS Transceivers BTS High Power Amplifiers CDMA / WCDMA / LTE General Purpose Wireless * ISM Equipment 1 2 3 RF IN GND RF OUT Top View Ordering Information Part No. Description TQP7M9105 TQP7M9105-PCB900 1 W High Linearity Amplifier 920-960MHz Evaluation Board Standard T/R size = 1000 pieces on a 7" reel Datasheet, December 15, 2017 | Subject to change without notice 1 of 13 www.qorvo.com TQP7M9105 1W High Linearity Amplifier (R) Absolute Maximum Ratings Parameter Storage Temperature RF Input Power, CW, 50, T=+25C Device Voltage (VCC) Recommended Operating Conditions Parameter Rating -65 to 150C +30dBm +8V Device Voltage (VCC) TCASE Tj for >106 hours MTTF Operation of this device outside the parameter ranges given above may cause permanent damage. Min Typ Max Units +5.0 +5.25 +105 +170 -40 V C C Electrical specifications are measured at specified test conditions. Specifications are not guaranteed over all recommended operating conditions. Electrical Specifications Test conditions unless otherwise noted: VCC = +5.0V, Temp= +25C Parameter Operational Frequency Range Test Frequency Gain Input Return Loss Output Return Loss Output P1dB Output IP3 WCDMA Output Power Noise Figure Quiescent Current, ICQ Thermal Resistance, jc Conditions Min Typ 50 17.5 Pout = +15 dBm/tone, f = 1 MHz -50 dBc ACLR(1) +28.7 +43.5 195 Module (junction to case) Max Units 1500 940 19.4 14 15 +30 +47 +20.5 6.3 220 27.3 20.5 245 MHz MHz dB dB dB dBm dBm dBm dB mA C/W Notes: ACLR Test set-up: 3GPP WCDMA, TM1+64 DPCH, +5 MHz offset, PAR = 10.2 dB at 0.01% Prob. Datasheet, December 15, 2017 | Subject to change without notice 2 of 13 www.qorvo.com TQP7M9105 1W High Linearity Amplifier (R) Device Characterization Data 25 Gain (dB) Input reflection coefficients Gain & Max Stable Gain 30 Output reflection coefficients 1 Gain Gmax 20 15 1 0.8 0.8 0.6 0.6 0.4 0.4 0.2 0.2 0 -1 -0.75 -0.5 -0.25 10 5 0 0 0.5 1 1.5 2 2.5 3 3.5 4 0 0 0.25 0.5 0.75 1 -1 -0.75 -0.5 -0.25 0 -0.2 -0.2 -0.4 -0.4 -0.6 -0.6 -0.8 -0.8 -1 -1 0.25 0.5 0.75 1 Frequency (GHz) Note: The gain for the unmatched device in 50 ohm system is shown as the trace in black color, [gain (S(21)]. For a tuned circuit for a particular frequency, it is expected that actual gain will be higher, up to the maximum stable gain. The maximum stable gain is shown as the blue trace [Gmax]. The impedance plots are shown from 0.01- 4 GHz. S-Parameters Test Conditions: VCC=+5 V, ICQ=220 mA, T=+25C, unmatched 50 ohm system, calibrated to device leads Freq (GHz) 0.05 0.1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0 3.2 3.4 3.6 3.8 4.0 S11 (dB) -1.06 -1.08 -1.01 -0.75 -0.57 -0.51 -0.51 -0.54 -0.57 -0.62 -0.66 -0.60 -0.56 -0.75 -0.58 -0.55 -0.64 -0.69 -0.84 -0.93 -0.85 -0.80 S11 (ang) -178.68 -179.98 179.18 176.01 171.34 166.55 163.55 161.26 157.96 154.88 150.04 144.26 139.27 135.92 132.79 132.30 129.89 126.19 121.41 115.44 110.18 106.76 S21 (dB) 17.88 16.04 15.20 14.04 12.73 11.29 10.11 8.87 7.85 7.10 6.35 5.75 4.95 3.91 3.16 2.52 2.01 1.69 1.48 1.06 0.51 -0.04 Datasheet, December 15, 2017 | Subject to change without notice S21 (ang) 154.59 154.96 150.91 134.55 120.33 108.35 98.59 90.63 82.50 75.78 67.47 59.82 51.93 45.80 40.57 36.55 31.75 26.65 20.86 12.97 5.81 -0.51 3 of 13 S12 (dB) -36.95 -37.20 -37.52 -36.48 -35.65 -35.14 -34.89 -34.56 -34.07 -33.47 -33.19 -32.84 -32.47 -32.62 -32.36 -32.25 -31.94 -31.44 -30.84 -30.84 -30.20 -30.40 S12 (ang) 1.89 3.77 7.85 11.27 11.92 9.35 11.74 11.00 10.99 10.29 11.13 4.95 3.98 1.55 2.07 2.62 0.51 1.40 -2.57 -4.71 -10.30 -11.85 S22 (dB) -3.39 -3.00 -2.91 -2.73 -2.52 -2.51 -2.50 -2.52 -2.61 -2.57 -2.66 -2.64 -2.59 -2.57 -2.28 -2.33 -2.37 -2.40 -2.54 -2.68 -2.63 -2.51 S22 (ang) -171.92 -176.29 -179.66 176.91 173.48 169.15 165.78 163.07 160.70 158.17 155.39 151.03 146.61 141.55 139.39 138.20 136.78 135.83 133.06 126.60 119.65 114.02 www.qorvo.com TQP7M9105 1W High Linearity Amplifier (R) Evaluation Board615 - 655 MHz Reference Design J4 C7 J3 J3 +5V 0.1 uF C6 J4 GND C7 C6 L1 L2 C5 C3 C1 1000 pF L3 U1 L3 12 nH C2 J1 C1 L1 TQP7M9103 RF Input 100 pF C3 2.2 nH C2 L2 U1 1 2,4 3 3.3 nH C5 100 pF J2 RF Output 10 pF 15 pF Notes: 1. 2. 3. 4. 5. Components shown on the silkscreen but not on the schematic are not used. 0 resistor can be replaced with copper trace in the target application layout. All components are of 0603 size unless stated on the schematic. The recommended component values are dependent upon the frequency of operation. Critical component placement locations: * Distance between U1 Pin 1 Pad left edge to L1 (right edge): 100 mil * Distance between U1 Pin 1 Pad left edge to C3 (right edge): 200 mil * Distance between U1 Pin 3 Pad right edge to C5 (left edge): 210 mil * Distance between U1 Pin 3 Pad right edge to L2 (left edge): 120 mil Bill of Material615 - 655 MHz Reference Des. n/a Value Description Manuf. Part Number n/a Printed Circuit Board Qorvo U1 n/a 1 W High Linearity Amplifier Qorvo TQP7M9105 C3 15 pF CAP, 0603, 0.05 pF, 50V, NPO AVX 06032U150J C5 10 pF CAP, 0603, 0.05 pF, 50V, NPO AVX 06032U100J C1, C2 100 pF CAP, 0603, 5%, 50V, NPO/COG various C6 1000 pF CAP, chip various C7 0.1 uF CAP, 0603, 10%, X5R , 10V various L1 2.2 nH IND, 0603, +/-0.3nH TOKO LL1608-FSL2N2S L2 3.3 nH IND, 0603, +/-0.3nH TOKO LL1608-FSL3N3S L3 12 nH IND, 0805, 5%, Wirewound Coilcraft 0805CS-120XJL Datasheet, December 15, 2017 | Subject to change without notice 4 of 13 www.qorvo.com TQP7M9105 1W High Linearity Amplifier (R) Typical Performance 615-655 MHz Test conditions unless otherwise noted: VCC=+5V, ICQ=235 mA, Temp.=+25C Parameter Conditions Frequency Gain Input Return Loss Output Return Loss Output P1dB OIP3 WCDMA Channel Power(1) Typical Value 617 21.6 10.5 17 +30.3 +44.7 +18 Pout=+16dBm/tone, f=1MHz ACLR=-50dBc 635 21.6 11 16.5 +30.5 +43.8 +17.5 Units 652 21.6 11 17.5 +30.8 +42.7 +16.8 MHz dB dB dB dBm dBm dBm Notes: 1. 1C 20MHz LTE signal, PAR=9.5dB Performance Plots 615-655 MHz Test conditions unless otherwise noted: VCC=+5V, ICQ=235 mA, Temp.=+25C Gain vs. Frequency 23 Return Loss vs. Frequency 0 OIP3 vs. Pout/tone 55 22 51 21 20 OIP3 (dBm) |S11| & |S22| (dB) Gain (dB) -5 -10 47 43 Input Return Loss -15 Output Return Loss 19 39 617 MHz 635 MHz 652 MHz 18 -20 600 610 620 630 640 650 660 670 35 600 610 620 Frequency (MHz) 630 640 650 660 670 Frequency (MHz) 12 13 14 15 16 17 Pout/Tone (dBm) ACPR vs Pout -35 1C 20MHz LTE signal, PAR = 9.5dB ACPR (dBc) -40 -45 -50 -55 617 MHz 635 MHz 652 MHz -60 12 13 14 15 16 17 18 19 20 21 22 Pout (dBm) Datasheet, December 15, 2017 | Subject to change without notice 5 of 13 www.qorvo.com TQP7M9105 1W High Linearity Amplifier (R) Evaluation Board-TQP7M9105-PCB900 (860 - 960 MHz) C5 J4 1.0uF J3 C5 C4 C4 J3 Vcc 0.1uF C3 C3 J4 GND L1 U1 L2 C8 R1 C7 C6 C1 1000pF C2 L1 10nH 0805 J1 C1 R1 L2 U1 1 TQP7M9105 RF Input 3.3pF 1 C6 4.7pF 2,4 C2 3 2.2nH C7 C8 1.5pF 4.7pF Notes: * See Evaluation Board PCB Information section for PCB material and stack-up. * Components shown on the silkscreen but not on the schematic are not used. * The recommended component values are dependent upon the frequency of operation. * All components are of 0603 size unless stated on the schematic. * Critical component placement locations: Distance from U1 Pin 1 Pad (left edge) to R1 (right edge): 100 Mils (4.85 at 940MHz) Distance from U1 Pin 1 Pad (left edge) to C6 (right edge): 270 Mils (13.1 at 940MHz) Distance from U1 Pin 3 Pad (right edge) to C7 (left edge): 40 Mils (1.94 at 940MHz) Distance from U1 Pin 3 Pad (right edge) to L2 (left edge): 120 Mils (5.82 at 940MHz) * Distance from U1 Pin 3 Pad (right edge) to C8 (left edge): 260 Mils (12.6 at 940MHz) Bill of MaterialTQP7M9105-PCB900 Reference Des. Value Description Manuf. n/a U1 C1 C2 n/a n/a 3.3pF 100pF Printed Circuit Board TQP7M9105 Amplifier, SOT-89 pkg. Cap., Chip, 0603, 0.1pF, 50V, Accu-P Cap., Chip, 0603, 5%, 50V, NPO/COG Qorvo Qorvo AVX various C3 C4 C5 C7 C6, C8 L1 1000pF 0.1F 1.0F 1.5pF 4.7pF 10nH Cap., Chip, 0603, 5%, 50V, NPO/COG Cap., Chip, 0603, 10%, 16V, X7R Cap., Chip, 0603, 10%, 10V, X5R Cap., Chip, 0603, 0.05pF, 50V, Accu-P Cap., Chip, 0603, 0.05pF, 50V, Accu-P Inductor, 0805, 5%, Coilcraft CS Series various various various AVX AVX Coilcraft Inductor, 0603, 0.3nH Resistor, Chip, 0603, 5%, 1/16W Toko various L2 R1 2.2nH 1 Datasheet, December 15, 2017 | Subject to change without notice 6 of 13 J2 100pF RF Output Part Number 06035J3R3ABSTR 06035J1R5ABSTR 06035J4R7ABSTR 0805CS-100XJLB LL1608-FSL2N2S www.qorvo.com TQP7M9105 1W High Linearity Amplifier (R) Typical Performance 860-960MHz (TQP7M9105-PCB900) Test conditions unless otherwise noted: VCC=+5V, ICQ=220mA, Temp.=+25C Parameter Units Typical Value Frequency Gain Input Return Loss Output Return Loss Output P1dB Output IP3(1) WCDMA Channel Power(2,3) Noise figure 860 18.9 7.9 16.2 +29 +48 20 6.8 880 19.2 9.5 16.7 +29.2 +50.2 20.2 6.6 900 19.3 11.3 16.8 +29.5 +50.6 20.5 6.4 920 19.4 13 15 +29.9 +49.5 +20.5 6.4 940 19.4 14 15 +30.0 +49.2 +20.5 6.4 960 19.3 13 14 +29.8 +49 +20.5 6.3 MHz dB dB dB dBm dBm dBm dB Notes: 1. +15 dBm/tone, f = 1 MHz 2. At -50 dBc ACLR 3. 3GPP WCDMA, TM1+64 DPCH, +5 MHz offset, PAR = 10.2 dB at 0.01% Prob. RF Performance Plots 860-960MHz (TQP7M9105-PCB900) Test conditions unless otherwise noted: VCC=+5V, ICQ=235 mA, Temp.=+25C Gain vs. Frequency 22 0 Input Return Loss vs. Frequency Return Loss (dB) Gain (dB) 21 20 19 - 40C +25C +85C 18 17 0.86 0.88 0.90 0.92 0.94 0.96 - 40C +25C +85C -5 -10 -15 -20 0.86 0.88 Frequency (GHz) Return Loss (dB) 0 0.90 0.92 0.94 0.96 Frequency (GHz) Output Return Loss vs. Frequency -5 - 40C +25C +85C -10 -15 -20 0.86 0.88 0.90 0.92 0.94 0.96 Frequency (GHz) Datasheet, December 15, 2017 | Subject to change without notice 7 of 13 www.qorvo.com TQP7M9105 1W High Linearity Amplifier (R) Performance Plots 860-960MHz (TQP7M9105-PCB900) Test conditions unless otherwise noted: VCC=+5V, ICQ=235 mA, Temp.=+25C ACLR vs. Output Power vs. Frequency -45 W-CDMA 3GPP Test Model 1+64 DPCH PAR = 9.7dB @ 0.01% Probability 3.84 MHz BW W-CDMA 3GPP Test Model 1+64 DPCH PAR = 9.7dB @ 0.01% Probability 3.84 MHz BW -50 -50 ACLR (dBm) ACLR (dBm) ACLR vs. Output Power at 940MHz -45 Temp.=+25oC -55 860 MHz 880 MHz 900 MHz 920 MHz 940 MHz 960 MHz -60 Frequency : 940 MHz -55 -60 -65 -65 16 17 18 19 20 21 16 17 18 Output Power (dBm) Temp.=+25oC 19 20 OIP3 vs. Output Power at 940MHz 55 1MHz Tone Spacing 1MHz Tone Spacing 50 OIP3 (dBm) 50 45 860 MHz 880 MHz 900 MHz 920 MHz 940 MHz 960 MHz 40 35 45 40 - 40 C +25C +85 C 35 30 30 12 13 14 15 16 17 18 12 13 Output Power / Tone(dBm) 14 15 16 17 18 Output Power / Tone(dBm) P1dB vs. Temperature 33 Icc vs. Output Power 600 Temp.=+25oC Frequency : 940 MHz CW Signal 500 31 400 29 Icc (mA) P1dB (dBm) 21 Output Power (dBm) OIP3 vs. Output Power vs. Frequency 55 OIP3 (dBm) - 40 C +25C +85 C 300 27 +85C +25C -40C 25 200 100 23 0 860 880 900 920 940 960 21 Frequency (MHz) Datasheet, December 15, 2017 | Subject to change without notice 23 25 27 29 31 Output Power (dBm) 8 of 13 www.qorvo.com TQP7M9105 1W High Linearity Amplifier (R) Evaluation Board700 - 1000 MHz Reference Design C9 J4 J3 1.0uF C8 C9 J3 Vcc C8 0.1uF C7 C7 J4 GND L1 U1 R1 C4 C2 C5 C1 J1 C6 J2 22pF L1 18nH J1 C5 R1 U1 1 TQP7M9105 RF Input 100pF 2.4 C1 C2 3.9pF 5.6pF 2,4 C6 3 C4 J2 100pF RF Output 5.6pF Notes: 6. 7. 8. 9. Components shown on the silkscreen but not on the schematic are not used. All components are of 0603 size unless stated on the schematic. The recommended component values are dependent upon the frequency of operation. Critical component placement locations: * Distance between U1 Pin 1 Pad to R1 (right edge): 45 mil * Distance between U1 Pin 1 Pad to C1 (right edge): 370 mil * Distance between U1 Pin 1 Pad to C2 (right edge): 195 mil * Distance between U1 Pin 3 Pad to C4 (left edge): 395 mil Bill of Material700 - 1000 MHz Reference Des. Value Description Manuf. Part Number n/a n/a Printed Circuit Board Qorvo 1100415 U1 n/a 1 W High Linearity Amplifier Qorvo TQP7M9105 C1 3.9 pF CAP, 0603, 0.1 pF, 100V, NPO/COG AVX 06035J3R9ABSTR C2, C4 5.6 pF CAP, 0603, 0.1 pF, 100V, NPO/COG AVX 06035J5R6ABSTR C5, C6 100 pF CAP, 0603, 5%, 50V, NPO/COG various C7 22 pF CAP, 0603, 5%, 50V, NPO/COG Various C8 0.1 uF CAP, 0603, 5%, 50V, NPO/COG various C9 1.0 uF CAP, 0603, 10%, X5R , 10V various R1 2.4 RES, 0603, 5%, 1/16W, Chip various L1 18 nH IND, 0805, 5%, Ceramic Coilcraft Datasheet, December 15, 2017 | Subject to change without notice 9 of 13 0805CS-180XJL www.qorvo.com TQP7M9105 1W High Linearity Amplifier (R) Typical Performance 700 - 1000 MHz Test Conditions: VCC=+5 V, Temp.=+25C, 50 System Parameter Typical Value Conditions Units Frequency 700 800 900 1000 MHz Gain 17.2 17.9 18 16.9 dB Input Return Loss 7.7 13.3 15.3 7.8 dB Output Return Loss Output P1dB Pout= +15 dBm/tone, f= 1 MHz Output IP3 8.5 10.9 14 15.7 dB +28.5 +29.5 +30.5 +30.5 dBm +45 +47 +44 +42.6 dBm Quiescent Collector Current, ICQ 225 mA Performance Plots700 - 1000 MHz Gain vs. Frequency 20 Return Loss vs. Frequency 0 OIP3 vs Pout/tone 55 19 18 17 50 OIP3 (dBm) Return Loss (dB) Gain (dB) -5 -10 -15 45 700 MHz 40 16 800 MHz 900 MHz Input Return Loss 1000 MHz Output return Loss 15 -20 700 800 900 1000 Frequency (MHz) Datasheet, December 15, 2017 | Subject to change without notice 35 700 800 900 Frequency (MHz) 10 of 13 1000 9 10 11 12 13 14 15 16 17 18 19 Pout/tone (dBm) www.qorvo.com TQP7M9105 1W High Linearity Amplifier (R) Pin Configuration and Description GND 4 1 2 3 RF IN GND RF OUT Pin No. Label Description 1 2, 4 RF IN GND RF Input. Requires external match for optimal performance. External DC Block required. RF/DC Ground Connection 3 RF OUT RF Output and VCC. Requires external match for optimal performance. External DC Block, RF chock and supply voltage is required. Evaluation Board PCB Information Qorvo PCB 1080068 Material and Stack-up 1 oz. Cu top layer 0.014" Nelco N-4000-13 1 oz. Cu inner layer 0.062" 0.006" Finished Board Thickness Core 1 oz. Cu inner layer 0.014" Nelco N-4000-13 1 oz. Cu bottom layer 50 ohm line dimensions: width = .028", spacing = .028". Datasheet, December 15, 2017 | Subject to change without notice 11 of 13 www.qorvo.com TQP7M9105 1W High Linearity Amplifier (R) Package Marking and Dimensions Marking: Part Number - 7M9105 Trace Code - XXXX 7M9105 XXXX Notes: 1. The terminal #1 identifier and terminal numbering conform to JESD 95-1 SPP-012. 2. Trace code up to 4 characters assigned by subcontractor 3. Contact plating: Annealed Matte Tin or Nickel Palladium Gold (NiPdAu) PCB Mounting Pattern 3.86 [0.152] 29X 3 1.26 [0.050] 0.63 [0.025] 0.76 [0.030] 4.50 [0.177] O.254 (.010) PLATED THRU VIA HOLES PACKAGE OUTLINE 2X 1.27 [0.050] 2X 0.58 [0.023] 2.65 [0.104] 2X 0.86 [0.034] 0.64 [0.025] 0.86 [0.034] 3.86 [0.152] NOTES: 1. All dimensions are in millimeters [inches]. Angles are in degrees. 2. Use 1 oz. copper minimum for top and bottom layer metal. 3. Via holes are required under the backside paddle of this device for proper RF/DC grounding and thermal dissipation. We recommend a 0.35mm (#80/.0135") diameter bit for drilling via holes and a final plated thru diameter of 0.25mm (0.10"). 4. Ensure good package backside paddle solder attach for reliable operation and best electrical performance. Datasheet, December 15, 2017 | Subject to change without notice 12 of 13 www.qorvo.com TQP7M9105 1W High Linearity Amplifier (R) Handling Precautions Parameter Rating Standard ESD-Human Body Model (HBM) 2 ESDA/JEDEC JS-001-2012 ESD-Charged Device Model (CDM) C3 JEDEC JESD22-C101F MSL-Moisture Sensitivity Level Level 1 IPC/JEDEC J-STD-020 Caution! ESD-Sensitive Device Solderability Compatible with both lead-free (260C max. reflow temp.) and tin/lead (245C max. reflow temp.) soldering processes. Solder profiles available upon request. Contact plating: Annealed Matte Tin or Nickel Palladium Gold (NiPdAu) RoHS Compliance This part is compliant with the 2011/65/EU RoHS directive (Restrictions on the Use of Certain Hazardous Substances in Electrical and Electronic Equipment) as amended by Directive 2015/863/EU. This product also has the following attributes: * * * * * * Product uses RoHS Exemption 7c-I to meet RoHS Compliance requirements. Halogen Free (Chlorine, Bromine) Antimony Free TBBP-A (C15H12Br402) Free PFOS Free SVHC Free Contact Information For the latest specifications, additional product information, worldwide sales and distribution locations: Web: www.qorvo.com Tel: 1-844-890-8163 Email: customer.support@qorvo.com For technical questions and application information: Email: appsupport@qorvo.com Important Notice The information contained herein is believed to be reliable; however, Qorvo makes no warranties regarding the information contained herein and assumes no responsibility or liability whatsoever for the use of the information contained herein. All information contained herein is subject to change without notice. Customers should obtain and verify the latest relevant information before placing orders for Qorvo products. The information contained herein or any use of such information does not grant, explicitly or implicitly, to any party any patent rights, licenses, or any other intellectual property rights, whether with regard to such information itself or anything described by such information. THIS INFORMATION DOES NOT CONSTITUTE A WARRANTY WITH RESPECT TO THE PRODUCTS DESCRIBED HEREIN, AND QORVO HEREBY DISCLAIMS ANY AND ALL WARRANTIES WITH RESPECT TO SUCH PRODUCTS WHETHER EXPRESS OR IMPLIED BY LAW, COURSE OF DEALING, COURSE OF PERFORMANCE, USAGE OF TRADE OR OTHERWISE, INCLUDING THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE. Without limiting the generality of the foregoing, Qorvo products are not warranted or authorized for use as critical components in medical, life-saving, or life-sustaining applications, or other applications where a failure would reasonably be expected to cause severe personal injury or death. Copyright 2016 (c) Qorvo, Inc. | Qorvo is a registered trademark of Qorvo, Inc. Datasheet, December 15, 2017 | Subject to change without notice 13 of 13 www.qorvo.com