TQP7M9105
1W High Linearity Amplifier
Datasheet, December 15, 2017 | Subject to change without notice
www.qorvo.com
®
3-pin SOT−89 Package
Applications
• Repeaters
• BTS Transceivers
• BTS High Power Amplifiers
• CDMA / WCDMA / LTE
• General Purpose Wireless
• ISM Equipment
Product Overview
The TQP7M9105 is a high linearity, high gain 1 W driver
amplifier in industry standard, RoHS compliant, SOT-89
surface mount package. This InGaP / GaAs HBT delivers
high performance across 0.05 to 1.5 GHz while achieving
+47 dBm OIP3 and +30 dBm P1dB at 940 MHz while only
consuming 220 mA quiescent current. All devices are
100% RF and DC tested.
The TQP7M9105 incorporates on-chip features that
differentiate it from other products in the market. The
amplifier has a dynamic active bias circuit that enable
stable operation over bias and temperature variations and
can provide a high linearity at back-off operation
The TQP7M9105 is targeted for use as a driver amplifier in
wireless infrastructure where high linearity, medium power,
and high efficiency are required. The device an excellent
candidate for transceiver line cards and high power
amplifiers in current and next generation multi-carrier
3G / 4G base stations.
Functional Block Diagram
Top View
Key Features
• 50 – 1500 MHz
• +30 dBm P1dB at 940 MHz
• +47 dBm Output IP3 at 940 MHz
• 19.5 dB Gain at 940 MHz
• +5 V Single Supply, 220 mA Current
• Internal RF Overdrive Protection
• Internal DC Overvoltage Protection
• On Chip ESD Protection
• SOT-89 Package
Ordering Information
Part No.
Description
TQP7M9105
1 W High Linearity Amplifier
TQP7M9105-PCB900
920 – 960 MHz Evaluation Board
Standard T/R size = 1000 pieces on a 7” reel
RF IN GND RF OUT
GND
1
2
3
4
TQP7M9105
1W High Linearity Amplifier
Datasheet, December 15, 2017 | Subject to change without notice
www.qorvo.com
®
Absolute Maximum Ratings
Parameter
Rating
Storage Temperature
−65 to 150 °C
RF Input Power, CW, 50 Ω, T=+25 °C
+30 dBm
Device Voltage (VCC)
+8 V
Operation of this device outside the parameter ranges given
above may cause permanent damage.
Recommended Operating Conditions
Parameter
Min
Typ
Max
Units
Device Voltage (VCC)
+5.0
+5.25
V
TCASE
−40
+105
°C
Tj for >106 hours MTTF
+170
°C
Electrical specifications are measured at specified test conditions.
Specifications are not guaranteed over all recommended operating
conditions.
Electrical Specifications
Test conditions unless otherwise noted: VCC = +5.0 V, Temp= +25 °C
Parameter
Conditions
Min
Typ
Max
Units
Operational Frequency Range
50
1500
MHz
Test Frequency
940
MHz
Gain
17.5
19.4
20.5
dB
Input Return Loss
14
dB
Output Return Loss
15
dB
Output P1dB
+28.7
+30
dBm
Output IP3
Pout = +15 dBm/tone, ∆f = 1 MHz
+43.5
+47
dBm
WCDMA Output Power
−50 dBc ACLR (1)
+20.5
dBm
Noise Figure
6.3
dB
Quiescent Current, ICQ
195
220
245
mA
Thermal Resistance, θjc
Module (junction to case)
27.3
°C/W
Notes:
ACLR Test set-up: 3GPP WCDMA, TM1+64 DPCH, +5 MHz offset, PAR = 10.2 dB at 0.01% Prob.
TQP7M9105
1W High Linearity Amplifier
Datasheet, December 15, 2017 | Subject to change without notice
www.qorvo.com
®
Device Characterization Data
Note: The gain for the unmatched device in 50 ohm system is shown as the trace in black color, [gain (S(21)]. For a tuned circuit for a particular
frequency, it is expected that actual gain will be higher, up to the maximum stable gain. The maximum stable gain is shown as the blue trace [Gmax].
The impedance plots are shown from 0.01– 4 GHz.
S-Parameters
Test Conditions: VCC=+5 V, ICQ=220 mA, T=+25°C, unmatched 50 ohm system, calibrated to device leads
Freq (GHz)
S11 (dB)
S11 (ang)
S21 (dB)
S21 (ang)
S12 (dB)
S12 (ang)
S22 (dB)
S22 (ang)
0.05
−1.06
−178.68
17.88
154.59
−36.95
1.89
−3.39
−171.92
0.1
−1.08
−179.98
16.04
154.96
−37.20
3.77
−3.00
−176.29
0.2
−1.01
179.18
15.20
150.91
−37.52
7.85
−2.91
−179.66
0.4
−0.75
176.01
14.04
134.55
−36.48
11.27
−2.73
176.91
0.6
−0.57
171.34
12.73
120.33
−35.65
11.92
−2.52
173.48
0.8
−0.51
166.55
11.29
108.35
−35.14
9.35
−2.51
169.15
1.0
−0.51
163.55
10.11
98.59
−34.89
11.74
−2.50
165.78
1.2
−0.54
161.26
8.87
90.63
−34.56
11.00
−2.52
163.07
1.4
−0.57
157.96
7.85
82.50
−34.07
10.99
−2.61
160.70
1.6
−0.62
154.88
7.10
75.78
−33.47
10.29
−2.57
158.17
1.8
−0.66
150.04
6.35
67.47
−33.19
11.13
−2.66
155.39
2.0
−0.60
144.26
5.75
59.82
−32.84
4.95
−2.64
151.03
2.2
−0.56
139.27
4.95
51.93
−32.47
3.98
−2.59
146.61
2.4
−0.75
135.92
3.91
45.80
−32.62
1.55
−2.57
141.55
2.6
−0.58
132.79
3.16
40.57
−32.36
2.07
−2.28
139.39
2.8
−0.55
132.30
2.52
36.55
−32.25
2.62
−2.33
138.20
3.0
−0.64
129.89
2.01
31.75
−31.94
0.51
−2.37
136.78
3.2
−0.69
126.19
1.69
26.65
−31.44
1.40
−2.40
135.83
3.4
−0.84
121.41
1.48
20.86
−30.84
−2.57
−2.54
133.06
3.6
−0.93
115.44
1.06
12.97
−30.84
−4.71
−2.68
126.60
3.8
−0.85
110.18
0.51
5.81
−30.20
−10.30
−2.63
119.65
4.0
−0.80
106.76
−0.04
−0.51
−30.40
−11.85
−2.51
114.02
0
5
10
15
20
25
30
0 0.5 1 1.5 2 2.5 3 3.5 4
Gain (dB)
Frequency (GHz)
Gain & Max Stable Gain
Gain
Gmax
-1
-0.8
-0.6
-0.4
-0.2
0
0.2
0.4
0.6
0.8
1
-1 -0.75 -0.5 -0.25 0 0.25 0.5 0.75 1
Input reflection coefficients
-1
-0.8
-0.6
-0.4
-0.2
0
0.2
0.4
0.6
0.8
1
-1 -0.75 -0.5 -0.25 0 0.25 0.5 0.75 1
Output reflection coefficients
TQP7M9105
1W High Linearity Amplifier
Datasheet, December 15, 2017 | Subject to change without notice
www.qorvo.com
®
Evaluation Board  615 – 655 MHz Reference Design
Notes:
1. Components shown on the silkscreen but not on the schematic are not used.
2. 0 Ω resistor can be replaced with copper trace in the target application layout.
3. All components are of 0603 size unless stated on the schematic.
4. The recommended component values are dependent upon the frequency of operation.
5. Critical component placement locations:
• Distance between U1 Pin 1 Pad left edge to L1 (right edge): 100 mil
• Distance between U1 Pin 1 Pad left edge to C3 (right edge): 200 mil
• Distance between U1 Pin 3 Pad right edge to C5 (left edge): 210 mil
• Distance between U1 Pin 3 Pad right edge to L2 (left edge): 120 mil
Bill of Material  615 – 655 MHz
Reference Des.
Value
Description
Manuf.
Part Number
n/a
n/a
Printed Circuit Board
Qorvo
U1
n/a
1 W High Linearity Amplifier
Qorvo
TQP7M9105
C3
15 pF
CAP, 0603, ± 0.05 pF, 50V, NPO
AVX
06032U150J
C5
10 pF
CAP, 0603, ± 0.05 pF, 50V, NPO
AVX
06032U100J
C1, C2
100 pF
CAP, 0603, 5%, 50V, NPO/COG
various
C6
1000 pF
CAP, chip
various
C7
0.1 uF
CAP, 0603, 10%, X5R , 10V
various
L1
2.2 nH
IND, 0603, +/-0.3nH
TOKO
LL1608-FSL2N2S
L2
3.3 nH
IND, 0603, +/-0.3nH
TOKO
LL1608-FSL3N3S
L3
12 nH
IND, 0805, 5%, Wirewound
Coilcraft
0805CS-120XJL
J4 J3
U1
C5
L3
C2
C6
C7
C3
C1 L1 L2
U1
TQP7M9103
J4 GND
J3 +5V
1
2,4
3
C3
15 pF
J1
RF
Input
J2
RF
Output
L3
12 nH
C2
100 pF
C1
100 pF
C7
0.1 uF
C6
1000 pF
C5
10 pF
L1
2.2 nH
L2
3.3 nH
TQP7M9105
1W High Linearity Amplifier
Datasheet, December 15, 2017 | Subject to change without notice
www.qorvo.com
®
Typical Performance 615 – 655 MHz
 
Test conditions unless otherwise noted: VC C= +5 V, ICQ = 235 mA, Temp. = +25 °C
Parameter
Conditions
Typical Value
Units
Frequency
617
635
652
MHz
Gain
21.6
21.6
21.6
dB
Input Return Loss
10.5
11
11
dB
Output Return Loss
17
16.5
17.5
dB
Output P1dB
+30.3
+30.5
+30.8
dBm
OIP3
Pout = +16 dBm / tone, Δf =1 MHz
+44.7
+43.8
+42.7
dBm
WCDMA Channel Power (1)
ACLR = −50 dBc
+18
+17.5
+16.8
dBm
Notes:
1. 1C 20MHz LTE signal, PAR=9.5dB
Performance Plots 615 – 655 MHz
Test conditions unless otherwise noted: VC C= +5 V, ICQ = 235 mA, Temp. = +25 °C
18
19
20
21
22
23
600 610 620 630 640 650 660 670
Gain (dB)
Frequency (MHz)
Gain vs. Frequency
-20
-15
-10
-5
0
600 610 620 630 640 650 660 670
|S11| & |S22| (dB)
Frequency (MHz)
Return Loss vs. Frequency
Input Return Loss
Output Return Loss
35
39
43
47
51
55
12 13 14 15 16 17
OIP3 (dBm)
Pout/Tone (dBm)
OIP3 vs. Pout/tone
617 MHz
635 MHz
652 MHz
-60
-55
-50
-45
-40
-35
12 13 14 15 16 17 18 19 20 21 22
ACPR (dBc)
Pout (dBm)
ACPR vs Pout
617 MHz
635 MHz
652 MHz
1C 20MHz LTE signal, PAR = 9.5dB
TQP7M9105
1W High Linearity Amplifier
Datasheet, December 15, 2017 | Subject to change without notice
www.qorvo.com
®
Evaluation Board – TQP7M9105-PCB900 (860 – 960 MHz)
Notes:
• See Evaluation Board PCB Information section for PCB material and stack-up.
• Components shown on the silkscreen but not on the schematic are not used.
• The recommended component values are dependent upon the frequency of operation.
• All components are of 0603 size unless stated on the schematic.
• Critical component placement locations:
Distance from U1 Pin 1 Pad (left edge) to R1 (right edge): 100 Mils (4.85° at 940 MHz)
Distance from U1 Pin 1 Pad (left edge) to C6 (right edge): 270 Mils (13.1° at 940 MHz)
Distance from U1 Pin 3 Pad (right edge) to C7 (left edge): 40 Mils (1.94° at 940 MHz)
Distance from U1 Pin 3 Pad (right edge) to L2 (left edge): 120 Mils (5.82° at 940 MHz)
• Distance from U1 Pin 3 Pad (right edge) to C8 (left edge): 260 Mils (12.6° at 940 MHz)
Bill of Material  TQP7M9105-PCB900
Reference Des.
Value
Description
Manuf.
Part Number
n/a
n/a
Printed Circuit Board
Qorvo
U1
n/a
TQP7M9105 Amplifier, SOT-89 pkg.
Qorvo
C1
3.3 pF
Cap., Chip, 0603, ±0.1 pF, 50 V, Accu-P
AVX
06035J3R3ABSTR
C2
100 pF
Cap., Chip, 0603, 5%, 50 V, NPO/COG
various
C3
1000 pF
Cap., Chip, 0603, 5%, 50 V, NPO/COG
various
C4
0.1 μF
Cap., Chip, 0603, 10%, 16 V, X7R
various
C5
1.0 μF
Cap., Chip, 0603, 10%, 10 V, X5R
various
C7
1.5 pF
Cap., Chip, 0603, ±0.05 pF, 50 V, Accu-P
AVX
06035J1R5ABSTR
C6, C8
4.7 pF
Cap., Chip, 0603, ±0.05 pF, 50 V, Accu-P
AVX
06035J4R7ABSTR
L1
10 nH
Inductor, 0805, 5%, Coilcraft CS Series
Coilcraft
0805CS-100XJLB
L2
2.2 nH
Inductor, 0603, ±0.3 nH
Toko
LL1608-FSL2N2S
R1
1 Ω
Resistor, Chip, 0603, 5%, 1/16 W
various
J4 J3
U1
C7
L1
C2
C3
C4
R1
C1
C6
C5
C8
L2
U1
TQP7M9105
J4 GND
J3 Vcc
1
2,4
3
C6
4.7pF
J1
RF
Input
J2
RF
Output
L1
10nH
0805
C2
100pF
C5
1.0uF
C4
0.1uF
C8
4.7pF
C3
1000pF
C7
1.5pF
C1
3.3pF
L2
2.2nH
R1
1
TQP7M9105
1W High Linearity Amplifier
Datasheet, December 15, 2017 | Subject to change without notice
www.qorvo.com
®
Typical Performance 860 – 960 MHz (TQP7M9105-PCB900)
Test conditions unless otherwise noted: VC C= +5 V, ICQ = 220 mA, Temp. = +25 °C
Parameter
Typical Value
Units
Frequency
860
880
900
920
940
960
MHz
Gain
18.9
19.2
19.3
19.4
19.4
19.3
dB
Input Return Loss
7.9
9.5
11.3
13
14
13
dB
Output Return Loss
16.2
16.7
16.8
15
15
14
dB
Output P1dB 
+29
+29.2
+29.5
+29.9
+30.0
+29.8
dBm
Output IP3 (1)
+48
+50.2
+50.6
+49.5
+49.2
+49
dBm
WCDMA Channel Power (2,3)
20
20.2
20.5
+20.5
+20.5
+20.5
dBm
Noise figure
6.8
6.6
6.4
6.4
6.4
6.3
dB
Notes:
1. +15 dBm/tone, ∆f = 1 MHz
2. At −50 dBc ACLR
3. 3GPP WCDMA, TM1+64 DPCH, +5 MHz offset, PAR = 10.2 dB at 0.01% Prob.
RF Performance Plots 860 – 960 MHz (TQP7M9105-PCB900)
Test conditions unless otherwise noted: VC C= +5 V, ICQ = 235 mA, Temp. = +25 °C
17
18
19
20
21
22
0.86 0.88 0.90 0.92 0.94 0.96
Gain (dB)
Frequency (GHz)
Gain vs. Frequency
-40°C
+25°C
+85°C
-20
-15
-10
-5
0
0.86 0.88 0.90 0.92 0.94 0.96
Return Loss (dB)
Frequency (GHz)
Input Return Loss vs. Frequency
-40°C
+25°C
+85°C
-20
-15
-10
-5
0
0.86 0.88 0.90 0.92 0.94 0.96
Return Loss (dB)
Frequency (GHz)
Output Return Loss vs. Frequency
-40°C
+25°C
+85°C
TQP7M9105
1W High Linearity Amplifier
Datasheet, December 15, 2017 | Subject to change without notice
www.qorvo.com
®
Performance Plots 860 – 960 MHz (TQP7M9105-PCB900)
Test conditions unless otherwise noted: VC C= +5 V, ICQ = 235 mA, Temp. = +25 °C
-65
-60
-55
-50
-45
16 17 18 19 20 21
ACLR (dBm)
Output Power (dBm)
ACLR vs. Output Power vs. Frequency
W-CDMA 3GPP Test Model 1+64 DPCH
PAR = 9.7dB @ 0.01% Probability
3.84 MHz BW
Temp.=+25oC
860 MHz
880 MHz
900 MHz
920 MHz
940 MHz
960 MHz
-65
-60
-55
-50
-45
16 17 18 19 20 21
ACLR (dBm)
Output Power (dBm)
ACLR vs. Output Power at 940MHz
W-CDMA 3GPP Test Model 1+64 DPCH
PAR = 9.7dB @ 0.01% Probability
3.84 MHz BW
Frequency : 940 MHz
-40 °C
+25°C
+85 °C
30
35
40
45
50
55
12 13 14 15 16 17 18
OIP3 (dBm)
Output Power / Tone(dBm)
OIP3 vs. Output Power vs. Frequency
1MHz Tone Spacing
Temp.=+25oC
860 MHz
880 MHz
900 MHz
920 MHz
940 MHz
960 MHz
30
35
40
45
50
55
12 13 14 15 16 17 18
OIP3 (dBm)
Output Power / Tone(dBm)
OIP3 vs. Output Power at 940MHz
1MHz Tone Spacing
-40 °C
+25°C
+85 °C
23
25
27
29
31
33
860 880 900 920 940 960
P1dB (dBm)
Frequency (MHz)
P1dB vs. Temperature
+85°C
+25°C
−40°C
0
100
200
300
400
500
600
21 23 25 27 29 31
Icc (mA)
Output Power (dBm)
Icc vs. Output Power
Temp.=+25oC
Frequency : 940 MHz CW Signal
TQP7M9105
1W High Linearity Amplifier
Datasheet, December 15, 2017 | Subject to change without notice
www.qorvo.com
®
Evaluation Board  700 – 1000 MHz Reference Design
Notes:
6. Components shown on the silkscreen but not on the schematic are not used.
7. All components are of 0603 size unless stated on the schematic.
8. The recommended component values are dependent upon the frequency of operation.
9. Critical component placement locations:
• Distance between U1 Pin 1 Pad to R1 (right edge): 45 mil
• Distance between U1 Pin 1 Pad to C1 (right edge): 370 mil
• Distance between U1 Pin 1 Pad to C2 (right edge): 195 mil
• Distance between U1 Pin 3 Pad to C4 (left edge): 395 mil
Bill of Material  700 – 1000 MHz
Reference Des.
Value
Description
Manuf.
Part Number
n/a
n/a
Printed Circuit Board
Qorvo
1100415
U1
n/a
1 W High Linearity Amplifier
Qorvo
TQP7M9105
C1
3.9 pF
CAP, 0603, ± 0.1 pF, 100V, NPO/COG
AVX
06035J3R9ABSTR
C2, C4
5.6 pF
CAP, 0603, ± 0.1 pF, 100V, NPO/COG
AVX
06035J5R6ABSTR
C5, C6
100 pF
CAP, 0603, 5%, 50V, NPO/COG
various
C7
22 pF
CAP, 0603, 5%, 50V, NPO/COG
Various
C8
0.1 uF
CAP, 0603, 5%, 50V, NPO/COG
various
C9
1.0 uF
CAP, 0603, 10%, X5R , 10V
various
R1
2.4 Ω
RES, 0603, 5%, 1/16W, Chip
various
L1
18 nH
IND, 0805, 5%, Ceramic
Coilcraft
0805CS-180XJL
J1 J2
J4 J3
U1
C4
L1
C6
C7
C9
C5
C1
C8
R1
C2
U1
TQP7M9105
J4 GND
J3 Vcc
1
2,4
3
C1
3.9pF
J1
RF
Input
J2
RF
Output
L1
18nH
C6
100pF
C9
1.0uF
C8
0.1uF
C4
5.6pF
C7
22pF
C5
100pF C2
5.6pF
R1
2.4
TQP7M9105
1W High Linearity Amplifier
Datasheet, December 15, 2017 | Subject to change without notice
www.qorvo.com
®
Typical Performance 700 – 1000 MHz
Test Conditions: VCC=+5 V, Temp.=+25°C, 50Ω System
Parameter
Conditions
Typical Value
Units
Frequency
700
800
900
1000
MHz
Gain
17.2
17.9
18
16.9
dB
Input Return Loss
7.7
13.3
15.3
7.8
dB
Output Return Loss
8.5
10.9
14
15.7
dB
Output P1dB
+28.5
+29.5
+30.5
+30.5
dBm
Output IP3
Pout= +15 dBm/tone, f= 1 MHz
+45
+47
+44
+42.6
dBm
Quiescent Collector Current, ICQ
225
mA
Performance Plots  700 – 1000 MHz
15
16
17
18
19
20
700 800 900 1000
Gain (dB)
Frequency (MHz)
Gain vs. Frequency
-20
-15
-10
-5
0
700 800 900 1000
Return Loss (dB)
Frequency (MHz)
Return Loss vs. Frequency
Input Return Loss
Output return Loss
35
40
45
50
55
910 11 12 13 14 15 16 17 18 19
OIP3 (dBm)
Pout/tone (dBm)
OIP3 vs Pout/tone
700 MHz
800 MHz
900 MHz
1000 MHz
TQP7M9105
1W High Linearity Amplifier
Datasheet, December 15, 2017 | Subject to change without notice
www.qorvo.com
®
Pin Configuration and Description
Pin No.
Label
Description
1
RF IN
RF Input. Requires external match for optimal performance. External DC Block required.
2, 4
GND
RF/DC Ground Connection
3
RF OUT
RF Output and VCC. Requires external match for optimal performance. External DC Block,
RF chock and supply voltage is required.
Evaluation Board PCB Information
Qorvo PCB 1080068 Material and Stack-up
50 ohm line dimensions: width = .028”, spacing = .028”.
RF IN GND RF OUT
GND
1
2
3
4
1 oz. Cu bottom layer
Nelco N-4000-13
Core
Nelco N-4000-13 1 oz. Cu top layer
1 oz. Cu inner layer
1 oz. Cu inner layer
0.062" ± 0.006"
Finished Board
Thickness
0.014"
0.014"
TQP7M9105
1W High Linearity Amplifier
Datasheet, December 15, 2017 | Subject to change without notice
www.qorvo.com
®
Package Marking and Dimensions
Marking:
Part Number – 7M9105
Trace Code – XXXX
Notes:
1. The terminal #1 identifier and terminal numbering conform to JESD 95-1 SPP-012.
2. Trace code up to 4 characters assigned by subcontractor
3. Contact plating: Annealed Matte Tin or Nickel Palladium Gold (NiPdAu)
PCB Mounting Pattern
7M9105
XXXX
3.86 [0.152]
0.64 [0.025] 2X 0.86 [0.034]
0.76 [0.030]
0.63 [0.025]
Ø.254 (.010) PLATED THRU VIA HOLES
1.26 [0.050]
2X 1.27 [0.050]
0.86 [0.034]
2X 0.58 [0.023]
4.50 [0.177]
2.65 [0.104]
PACKAGE OUTLINE
3.86 [0.152]
29X 3
NOTES:
1. All dimensions are in millimeters [inches]. Angles are in degrees.
2. Use 1 oz. copper minimum for top and bottom layer metal.
3. Via holes are required under the backside paddle of this device for proper RF/DC grounding and thermal dissipation. We
recommend a 0.35mm (#80/.0135") diameter bit for drilling via holes and a final plated thru diameter of 0.25mm (0.10”).
4. Ensure good package backside paddle solder attach for reliable operation and best electrical performance.
TQP7M9105
1W High Linearity Amplifier
Datasheet, December 15, 2017 | Subject to change without notice
www.qorvo.com
®
Handling Precautions
Parameter
Rating
Standard
Caution!
ESD-Sensitive Device
ESD – Human Body Model (HBM)
2
ESDA / JEDEC JS-001-2012
ESD – Charged Device Model (CDM)
C3
JEDEC JESD22-C101F
MSL – Moisture Sensitivity Level
Level 1
IPC/JEDEC J-STD-020
Solderability
Compatible with both lead-free (260°C max. reflow temp.) and tin/lead (245°C max. reflow temp.) soldering processes.
Solder profiles available upon request.
Contact plating: Annealed Matte Tin or Nickel Palladium Gold (NiPdAu)
RoHS Compliance
This part is compliant with the 2011/65/EU RoHS directive (Restrictions on the Use of Certain Hazardous Substances in Electrical and
Electronic Equipment) as amended by Directive 2015/863/EU. This product also has the following attributes:
• Product uses RoHS Exemption 7c-I to meet RoHS Compliance requirements.
• Halogen Free (Chlorine, Bromine)
• Antimony Free
• TBBP-A (C15H12Br402) Free
• PFOS Free
• SVHC Free
Contact Information
For the latest specifications, additional product information, worldwide sales and distribution locations:
Web: www.qorvo.com Tel: 1-844-890-8163
Email: customer.support@qorvo.com
For technical questions and application information:
Email: appsupport@qorvo.com
Important Notice
The information contained herein is believed to be reliable; however, Qorvo makes no warranties regarding the information contained
herein and assumes no responsibility or liability whatsoever for the use of the information contained herein. All information contained
herein is subject to change without notice. Customers should obtain and verify the latest relevant information before placing orders for
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patent rights, licenses, or any other intellectual property rights, whether with regard to such information itself or anything described by
such information. THIS INFORMATION DOES NOT CONSTITUTE A WARRANTY WITH RESPECT TO THE PRODUCTS DESCRIBED
HEREIN, AND QORVO HEREBY DISCLAIMS ANY AND ALL WARRANTIES WITH RESPECT TO SUCH PRODUCTS WHETHER
EXPRESS OR IMPLIED BY LAW, COURSE OF DEALING, COURSE OF PERFORMANCE, USAGE OF TRADE OR OTHERWISE,
INCLUDING THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE.
Without limiting the generality of the foregoing, Qorvo products are not warranted or authorized for use as critical components in medical,
life-saving, or life-sustaining applications, or other applications where a failure would reasonably be expected to cause severe personal
injury or death.
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