MCP1402T-E/OT - MICROCHIP

MCP1401/02

Features

• High Peak Output Current: 500 mA (typical)

• Wide Input Supply Voltage Operating Range:

- 4.5V to 18V

• Low Shoot-Through/Cross-Conduction Current in

Output Stage

• High Capacitive Load Drive Capability:

- 470 pF in 19 ns (typical)

- 1000 pF in 34 ns (typical)

• Short Delay T i mes: 35 ns (typical)

• Matched Rise/Fall Times

• Low Supply Current:

- With Logic ‘1’ In put – 0.85 mA (typ ical)

- With Logic ‘0’ Input – 0.1 mA (typical)

• Latch-Up Protected: Will Withstand 500 mA

Reverse Current

• Logic Input Will Withstand Negative Swing Up To 5V

• Space-saving 5-Lead SOT-23 Package

Applications

• Switch Mode Power Supplie s

• Pulse Transformer Drive

• Line Drivers

• Motor and Solenoid Drive

General Description

The MCP1401/02 are high speed MOSFET drivers

capable of providing 500 mA of peak current. The

inverting or non-inverting single channel output is

directly controlled from either TTL or CMOS (3V to

18V). These devices also feature low shoot-through

current, matched rise/fall times and propagation delays

which make them ideal for high switching frequency

applications.

The MCP1401/02 devices ope rate from a 4.5V to 18V

single power supply and can easily charge and

discharge 470 pF gate capacitance in under 19 ns

(typical). They provide low enough impedances in both

the on and off states to ensure the MOSFETs intended

state will not be affected, even by large transients.

These devices are h ighly latch-up resistant under any

conditions within their power and voltage ratings. They

are not subject to damage when up to 5V of noise

spiking (of either polarity) occurs on the ground pin.

They can accept, without damage or lo gic u pset, up to

500 mA of reverse current being forced back in to their

outputs. All terminals are fully protect against

Electrostatic Discharge (ESD) up to 3 kV (HBM) and

400V (MM).

Package Types

VDD

GND

OUT

GND

OUT

GND

MCP1401 MCP1402

SOT-23-5

Tiny 500 mA, High-Speed Power MOSFET Driver

MCP1401/02

Functional Block Diagram

Effective

Input C = 25 pF

MCP1401 Inverting

MCP1402 Non-inverting

Input

GND

VDD

300 mV

4.7V

Inverting

Non-inverting

850 µA

Output

(Each Input)

MCP1401/02

1.0 ELECTRICAL

CHARACTERISTICS

Absolute Maximum Ratings †

Supply Voltage................................................................+20V

Input Voltage...............................(VDD + 0.3V) to (GND – 5V)

Input Current (VIN>VDD)................................................50 mA

Package Power Dissipation (TA = 50oC)

SOT-23-5...................................................................0.39W

† Notice: Stresses above those listed under "Maximum

Ratings" may cause permanent damage to the device. This is

a stress rating only and functional operation of the device at

those or any other conditions above those indicated in the

operational sections of this specification is not intended.

Exposure to maximum rating conditions for extended per iods

may affect device reliability.

DC CHARACTERISTICS (NOTE 2)

Electrical Specifications: Unless otherwise indicated, TA = +25°C, with 4.5V ≤ VDD ≤ 18V.

Parameters Sym Min Typ Max Units Conditions

Input

Logic ‘1’, High In put Voltage VIH 2.4 1.5 — V

Logic ‘0’, Low Input Voltage VIL —1.30.8V

Input Current IIN –1 — 1 µA 0V ≤ VIN ≤ VDD

Input Vo ltage VIN -5 — VDD+0.3 V

Output

High Output Voltage VOH VDD – 0.025 — — V DC Test

Low Output Volt age VOL — — 0.025 V DC Test

Output Resistance, High ROH —1218ΩIOUT = 10 mA, VDD = 18V

Output Resi stance, Low ROL —1016ΩIOUT = 10 mA, VDD = 18V

Peak Output Current IPK —0.5—AV

DD = 18V (Note 2)

Latch-Up Protection With-

stand Reverse Current IREV — >0.5 — A Duty cycle ≤ 2%, t ≤ 300 µs

Switching Time (Note 1)

Rise Time tR—1925nsFigure 4-1, Figure 4-2

CL = 470 pF

Fall Time tF—1520nsFigure 4-1, Figure 4-2

CL = 470 pF

Delay Time tD1 —3540nsFigure 4-1, Figure 4-2

Delay Time tD2 —3540nsFigure 4-1, Figure 4-2

Power Supply

Supply Voltage VDD 4.5 — 18.0 V

Power Supply Current IS— 0.85 1.1 mA VIN = 3V

IS— 0.10 0.20 mA VIN = 0V

Note 1: Switching times ensured by design.

2: Tested during characterization, not production tested.

MCP1401/02

DC CHARACTERISTICS (OVER OPERATING TEMPERATURE RANGE)

TEMPERATURE CHARACTERISTICS

Electrical Specifications: Unless otherwise indicated, operating temperature range with 4.5V ≤ VDD ≤ 18V.

Parameters Sym Min Typ Max Units Conditions

Input

Logic ‘1’, High In put Voltage VIH 2.4 — — V

Logic ‘0’, Low Input Volt age VIL ——0.8V

Input Current IIN –10 — +10 µA 0V ≤ VIN ≤ VDD

Input Vo ltage VIN -5 — VDD+0.3 V

Output

High Output Voltage VOH VDD – 0.025 — — V DC TEST

Low Output Voltage VOL — — 0.025 V DC TEST

Output Resistance, High ROH —1218ΩIOUT = 10 mA, VDD = 18V

Output Resistance, Low ROL —1016ΩIOUT = 10 mA, VDD = 18V

Switching Time (Note 1)

Rise Time tR—2030nsFigure 4-1, Figure 4-2

CL = 470 pF

Fall Time tF—1828nsFigure 4-1, Figure 4-2

CL = 470 pF

Delay T ime tD1 —4051nsFigure 4-1, Figure 4-2

Delay T ime tD2 —4051nsFigure 4-1, Figure 4-2

Power Supply

Supply Voltage VDD 4.5 — 18.0 V

Power Supply Current IS—

—0.90

0.11 1.10

0.20 mA

mA VIN = 3V

VIN = 0V

Note 1: Switching times ensured by design.

2: Tested during characterization, not production tested.

Electrical Specifications: Unless otherwise noted, all parameters apply with 4.5V ≤ VDD ≤ 18V.

Parameters Sym Min Typ Max Units Conditions

Temperature Ranges

Specified Temperature Range TA–40 — +125 °C

Maximum Junction Temperature TJ— — +150 °C

Storage Temperature Range TA–65 — +150 °C

Package Thermal Resistances

Thermal Resistance, 5L-SOT-23 θJA —256 —°C/W

MCP1401/02

2.0 TYPICAL PERFORMANCE CURVES

Note: Unless otherwise indicated, TA = +25°C with 4.5V ≤ VDD ≤ 18V.

FIGURE 2-1: Rise Time vs. Supply

Voltage.

FIGURE 2-2: Rise Time vs. Capacitive

Load.

FIGURE 2-3: Rise and Fall Times vs.

Temperature.

FIGURE 2-4: Fall Time vs. Supply

Voltage.

FIGURE 2-5: Fall Time vs. Capacitive

Load.

FIGURE 2-6: Propagation Delay vs. Input

Amplitude.

Note: The graphs and tables provided following this note are a statistical summary based on a limited number of

samples and are provided for informational purposes only . The performance characteristics listed herein are

not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified

operating range (e.g., outside specified pow er supply range) and therefore outside the warranted range.

100

150

200

250

300

350

4 6 8 1012141618

Supply Voltage (V)

Rise TIme (ns)

3300 pF

470 pF 100 pF

1000 pF

100

150

200

250

100 1000 10000

Capacitive Load (pF)

Rise Time (ns)

18V

12V

-40 -25 -10 5 20 35 50 65 80 95 110 125

Temperature (oC)

Time (ns)

CLOAD = 470 pF

VDD = 12V

tFALL

tRISE

100

150

200

250

300

350

4 6 8 1012141618

Supply Voltage (V)

Fall Time (ns)

3300 pF

470 pF

100 pF

1000 pF

100

150

200

250

100 1000 10000

Capacitve Load (pF)

Fall Time (ns)

18V

12V

45678910

Input Amplitude (V)

Propagation Delay (ns)

tD2

tD1

VDD= 12V

MCP1401/02

Typical Performance Curves (Continued)

Note: Unless otherwise indicated, TA = +25°C with 4.5V ≤ VDD ≤ 18V.

FIGURE 2-7: Propagation Delay Time vs.

Supply Voltage.

FIGURE 2-8: Propagation Delay Time vs.

Temperature.

FIGURE 2-9: Quiescent Current vs.

Supply Voltage.

FIGURE 2-10: Quiescent Current vs.

Temperature.

FIGURE 2-11 : Input Threshold vs. Supply

Voltage.

FIGURE 2-12: Input Threshold vs.

Temperature.

4 6 8 1012141618

Supply Voltage (V)

Propagation Delay (ns)

tD2

tD1

-40 -25 -10 5 20 35 50 65 80 95 110 125

Temperature (oC)

Propagation Delay (ns)

VDD = 12V

tD2

tD1

0.0

0.2

0.4

0.6

0.8

1.0

1.2

4 6 8 1012141618

Supply Voltage (V)

Quiescent Current (mA)

Input = 1

Input = 0

0.0

0.2

0.4

0.6

0.8

1.0

1.2

-40 -25 -10 5 20 35 50 65 80 95 110 125

Temperature (oC)

Quiescent Current (mA)

VDD = 18V

Input = 1

Input = 0

1.5

1.6

1.7

1.8

1.9

2.1

2.2

4 6 8 10 12 14 16 18

Supply Voltage (V)

Input Threshold (V)

VLO

VHI

1.6

1.7

1.8

1.9

2.1

2.2

2.3

2.4

-40 -25 -10 5 20 35 50 65 80 95 110 125

Temperature (oC)

Input Threshold (V)

VDD = 12V

VLO

VHI

MCP1401/02

Typical Performance Curves (Continued)

Note: Unless otherwise indicated, TA = +25°C with 4.5V ≤ VDD ≤ 18V.

FIGURE 2-13: Supply Current vs.

Capacitive Load.

FIGURE 2-14: Supply Current vs.

Capacitive Load.

FIGURE 2-15: Supply Current vs.

Capacitive Load.

FIGURE 2-16: Supply Current vs.

Frequency.

FIGURE 2-17: Supply Current vs.

Frequency.

FIGURE 2-18: Supply Current vs.

Frequency.

100

125

150

100 1000 10000

Capacitive Load (pF)

Supply Current (mA)

100 kHz

VDD = 18V 2 MHz

1 MHz

200 kHz

50 kHz

100 1000 10000

Capacitive Load (pF)

Supply Current (mA)

100 kHz

VDD = 12V 2 MHz

1 MHz

200 kHz

50 kHz

100 1000 10000

Capacitive Load (pF)

Supply Current (mA)

100 kHz

VDD = 6V 2 MHz

1 MHz

200 kHz

50 kHz

10 100 1000

Frequency (kHz)

Supply Current (mA)

VDD = 18V 6,800 pF

3,300 pF

1,000 pF

470 pF

100 pF

10 100 1000

Frequency (kHz)

Supply Voltage (V)

VDD = 12V 6,800 pF

3,300 pF

1,000 pF

470 pF

100 pF

10 100 1000

Frequency (kHz)

Supply Current (mA)

VDD = 6V 6,800 pF

3,300 pF

1,000 pF

470 pF

100 pF

MCP1401/02

Typical Performance Curves (Continued)

Note: Unless otherwise indicated, TA = +25°C with 4.5V ≤ VDD ≤ 18V.

FIGURE 2-19: Output Resistance (Output

High) vs. Supply V oltage.

FIGURE 2-20: Output Resistance (Output

Low) vs. Supply V oltage.

FIGURE 2-21: Crossover Energy vs.

Supply Voltage.

4 6 8 1012141618

Supply Voltage (V)

ROUT-HI (mΩ)

VIN = 0V (MCP1401)

VIN = 5V (MCP1402)

TJ = +125oC

TJ = +25oC

4 6 8 1012141618

Supply Voltage (V)

ROUT-LO (mΩ)

VIN

= 5V (MCP1401)

VIN

= 0V (MCP1402)

TJ = +125oC

TJ = +25oC

1E-10

1E-9

1E-8

1E-7

4 6 8 1012141618

Supply Voltage (V)

Crossover Energy (A*sec)

MCP1401/02

3.0 PIN DESCRIPTIONS

The descriptions of the pins are listed in Table 3-1.

TABLE 3-1: PIN FUNCTION TABLE (1)

3.1 Supply Input (VDD)

VDD is the bias supply input for the MOSFET driver and

has a voltage range of 4.5V to 18V. This input must be

decoupled to ground with a local capacitor . This bypass

capacitor provides a localized low-impe dance path for

the peak currents that are to be provided to the load.

3.2 Control Input (IN)

The MOSFET driver input is a high-impedance, TTL/

CMOS-compatible input. The input also has hysteresis

between the high and low input levels, allowing them to

be driven from slow rising and falling signals, and to

provide noise immunity.

3.3 Ground (GND)

Ground is the device return pin. The ground pin should

have a low impedance connection to the bias supply

source return. High peak currents will flow out the

ground pin when the capacitive load is being

discharged.

3.4 Output (OUT)

The output is a CMOS push-pull output that is capable

of sourcing and sinking 0.5A of peak current

(VDD = 18V). The low output impedance ensures the

gate of the external MOSFET will stay in the intended

state even during large transients. This output also has

a reverse current latch-up rating of 0.5A.

SOT-23-5 Symbol Description

1 GND Ground

DD Supply Input

3 IN Control Input

4 GND Ground

5 OUT Output

Note 1: Duplicate pins must be connected for proper operation.

MCP1401/02

4.0 APPLICATION INFORMATION

4.1 General Information

MOSFET drivers are hi gh-speed, high current devices

which are intended to source/sink high peak currents to

charge/discharge the gate capacitance of external

MOSFETs or IGBTs. In high frequency switching power

supplies, the PWM controller may not have the drive

capability to directly drive the power MOSFET. A

MOSFET driver like the MCP1401/02 family can be

used to provide additional source/sink current

capability.

4.2 MOSFET Driver Timing

The ability of a MOSFET driver to transition from a fully

off state to a fully on state are characterized by the

drivers rise time (tR), fall time (tF), and propagation

delays (tD1 and tD2). The MCP1401/02 family of drivers

can typically charge and discharge a 470 pF load

capacitance in 19 ns along with a typical matched

propagation delay of 35 ns. Figure 4-1 and Figure 4-2

show the test circuit and timing waveform used to verify

the MCP1401/0 2 timing.

FIGURE 4-1: Inverting Driver Timi ng

Waveform.

FIGURE 4-2: Non-Inverting Driver Timing

Waveform.

4.3 Decoupling Capacitors

Careful layout and decoupling capacitors are highly

recommended when using MOSFET drivers. Large

currents are required to charge and discharge

capacitive loads quickly. For example, approximately

550 mA are needed to charge a 470 pF load with 18V

in 15 ns.

To operate the MOSFET driver over a wide frequency

range with low supply impedance, a ceramic and low

ESR film capacitor is recommended to be placed in

parallel between the driver VDD and GND. A 1.0 µF low

ESR film capacitor and a 0.1 µF ceramic capacitor

placed between pins 2 and 1 should be used. These

capacitors should be placed close to the driver to

minimized circuit board parasitics and provide a local

source for the required current.

4.4 PCB Layout Considerations

Proper PCB layout is important in a high current, fast

switching circuit to provide proper device operation and

robustness of design. PCB trace loop area and

inductance should be minimized by the use of ground

planes or trace under MOSFET gate drive signals,

separate analog and power grounds, and local driver

decoupling.

Placing a ground plane beneath the MCP1401/02 will

help as a radiated noise shield as well as providing

some heat sinking for power dissipated within the

device.

0.1 µF

+5V

10%

90%

10%

90%

10%

90%

18V

1µF

MCP1401

CL = 470 pF

Input

Output

tD1 tFtD2

Output

VDD = 18V

Ceramic

90%

Input

tD1 tF

tD2

Output tR

10%

10% 10%

+5V

18V

90%

0.1 µF

1µF

MCP1402

CL = 470 pF

Input Output

VDD = 18V

Ceramic

MCP1401/02

4.5 Power Dissipation

The total internal power dissipation in a MOSFET driver

is the summation of three separate power dissipation

elements.

EQUATION 4-1:

4.5.1 CAPACITIVE LOAD DISSIPATION

The power dissipation caused by a capacitive load is a

direct function of frequency, total capacitive load, and

supply voltage. The power lost in the MOSFET driver

for a complete charging and discharging cycle of a

MOSFET is shown in Equation 4-2.

EQUATION 4-2:

4.5.2 QUIESCENT POWER DISSIPATION

The power dissipation associated with the quiescent

current draw depends upon the state of the input pin.

The MCP1401/02 devices have a quiescent current

draw when the input is high of 0.85 mA (typical) and

0.1 mA (typical) when the input is low. The quiescent

power dissipation is shown in Equation 4-3.

EQUATION 4-3:

4.5.3 OPERATING POWER DISSIPATION

The operating powe r dissipation occurs each time the

MOSFET driver output transitions because for a very

short period of time both MOSFETs in the output stage

are on simultaneously. This cross-conduction current

leads to a power dissipation described in Equation 4-4.

EQUATION 4-4:

PTPLPQPCC

++=

Where:

PT= Total power dissipation

PL= Load power di ssipation

PQ= Quiescent power dissipation

PCC = Operating power dissipation

PLfC

×VDD2

×=

Where:

f = Switching frequency

CT= Total load capacitance

VDD = MOSFET driver supply voltage

PQIQH DI

QL 1D–()×+×()VDD

×=

Where:

IQH = Quiescent current in the high

state

D = Duty cycle

IQL = Quiescent current in the low

state

VDD = MOSFET driver supply voltage

PCC CC f×VDD

×=

Where:

CC = Cross-conduction constant

(A*sec)

f = Switching frequency

VDD = MOSFET driver supply voltage

MCP1401/02

5.0 PACKAGING INFORMATION

5.1 Package Marking Information (Not to Scale)

Legend: XX...X Customer-specific information

Y Year code (last digit of calendar year)

YY Year code (last 2 digits of calendar year)

WW Week code (week of January 1 is week ‘01’)

NNN Alphanumeric traceability code

Pb-free JEDEC designator for Matte Tin (Sn)

*This package is Pb-free. The Pb-free JEDEC designator ( )

can be found on the outer packaging for this package.

Note: In the event the full Microchip part number cannot be marked on one line, it will

be carried over to the next line, thus limiting the number of available

characters for customer-specific information.

5-Lead SOT-23 Example:

Standard Markings for SOT-23

Part Number Code

MCP1401T-E/OT GYNN

MCP1402T-E/OT GZNN

XXNN

GYNN

MCP1401/02

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MCP1401/02

NOTES:

MCP1401/02

APPENDIX A: REVISION HISTORY

Revision B (December 2007)

• Updated the low supply curre nt values.

• Updated Section 5.1 “Package Marking Infor-

mation (Not to Scale)”.

Revision A (June 2007)

• Original Release of this Document.

MCP1401/02

NOTES:

MCP1401/02

PRODUCT IDENTIFICATION SYSTEM

To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office.

Device: MCP1401: 500 mA MOSFET Driver, Inverting

MCP1402: 500 mA MOSFET Driver, Non-Inverting

Tape and Reel T = Tape and Reel

Temperature Range: E = -40°C to +125°C

Package: * OT = Plastic Thin Small Outline Transistor (OT) , 5-Lea d

* All package offerings are Pb Free (Lead Free)

Examples:

a) MCP1401T-E/OT: 500 m A Inverting

MOSFET Driver,

5LD SOT -23 package.

a) MCP1402T-E/OT 500 mA Non-Inverting,

MOSFET Driver,

5LD SOT -23 package,

PART NO. X X

TemperatureTape & Reel

Range

Device

Package

Range

MCP1401/02

NOTES:

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applications and the like is provided only for your convenience

and may be superseded by updates. It is your responsibility to

ensure that your application meets with your specifications.

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conveyed, implicitly or otherwise, under any Microchip

intellectual property rights.

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Note the following details of the code protection feature on Microchip devices:

• Microchip products meet the specification contained in their particular Microchip Data Sheet.

• Microchip believes that its family of product s is one of the most secure families of its kind on the market today, when used in the

intended manner and under normal conditions.

• There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our

knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip’s Dat a

Sheets. Most likely, the person doing so is engaged in theft of intellectual property.

• Microchip is willing to work with the customer who is concerned about the integrity of their code.

• Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not

mean that we are guaranteeing the product as “unbreakable.”

Code protection is constantly evolving. We at Microchip are committed to continuously improving the code protection featur es of our

products. Attempts to break Microchip’ s code protection feature may be a violation of the Digit al Millennium Copyright Act. If such acts

allow unauthorized access to you r software or other copyrighted work, you may have a right to sue for relief under that Act.

Microchip received ISO/TS-16949:200 2 certif ication for its worldwide

headquarters, design and wafer fabrication facilities in Chandler and

Tempe, Arizona; Gresham, Oregon and design cent ers in California

and India. The Company’s quality system processes and procedures

are for its PIC® MCUs and dsPIC® DSCs, KEELOQ® code hopping

devices, Serial EEPROMs, microperi pherals, nonvola tile memo ry and

analog product s. In addition, Microchip ’s quality system for the desig n

and manufacture of development systems is ISO 9001:2000 certified.

AMERICAS

Corporate Office

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EUROPE

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Tel: 43-7242-2244-39

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Denmark - Copenhagen

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Netherlands - Drunen

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WORLDWIDE SALES AND SERVICE

10/05/07