QSD2030F — Plastic Silicon Photodiode
©2010 Fairchild Semiconductor Corporation www.fairchildsemi.com
QSD2030F Rev. 1.1.1
July 2010
QSD2030F
Plastic Silicon Photodiode
Features
■
PIN photodiode
■
Package type: T-1 3/4 (5mm lens diameter)
■
Wide reception angle, 40°
■
Daylight filter
■
Package material and color: black epoxy
■
High sensitivity
■
Peak sensitivity
λ
= 880nm
■
Radiant sensitive area: 1.245mm x 1.245mm
Package Dimensions
0.195 (4.95)
0.040 (1.02)
NOM
0.100 (2.54)
NOM
0.050 (1.25)
0.800 (20.3)
MIN
0.305 (7.75)
0.240 (6.10)
0.215 (5.45)
0.020 (0.51)
SQ. (2X)
REFERENCE
SURFACE
CATHODE
CATHODE
ANODE
Notes:
1. Dimensions for all drawings are in inches (mm).
2. Tolerance of ±0.010 (0.25) on all non-nominal dimensions unless otherwise specified.
Schematic
©2010 Fairchild Semiconductor Corporation www.fairchildsemi.com
QSD2030F Rev. 1.1.1 2
QSD2030F — Plastic Silicon Photodiode
Absolute Maximum Ratings
(T
A
= 25°C unless otherwise specified)
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only.
Notes:
1. Derate power dissipation linearly 1.33mW/°C above 25°C.
2. RMA flux is recommended.
3. Methanol or isopropyl alcohols are recommended as cleaning agents.
4. Soldering iron 1/16” (1.6mm) minimum from housing.
Electrical/Optical Characteristics
(T
A
=25°C)
Symbol Parameter Rating Unit
T
OPR
Operating Temperature -40 to +100 °C
T
STG
Storage Temperature -40 to +100 °C
T
SOL-I
Soldering Temperature (Iron)
(2,3,4)
240 for 5 sec °C
T
SOL-F
Soldering Temperature (Flow)
(2,3)
260 for 10 sec °C
V
BR
Reverse Breakdown Voltage 50 V
P
D
Power Dissipation
(1)
100 mW
Symbol Parameter Test Conditions Min. Typ. Max. Units
λ
PS
Peak Sensitivity Wavelength 880 nm
λ
SR
Wavelength Sensitivity Range 700 1100 nm
Θ
Reception Angle ±20 °
V
F
Forward Voltage I
F
= 80mA 1.3 V
I
D
Reverse Dark Current V
R
= 10V, Ee = 0 10 nA
I
L
Reverse Light Current Ee = 0.5mW/cm
2
, V
R
= 5V,
λ
= 950nm
15 25 µA
V
O
Open Circuit Voltage Ee = 0.5mW/cm
2
,
λ
= 880nm 420 mV
TC
V
Temperature Coefficient of V
O
+0.6 mV
/
K
I
SC
Short Circuit Current Ee = 0.5mW/cm
2
,
λ
= 880nm 50 µA
TC
I
Temperature Coefficient of I
SC
+0.3 %
/
K
C Capacitance V
R
= 0, f = 1MHz, Ee = 0 60 pF
t
r
Rise Time V
R
= 5V, R
L
= 50
Ω
,
λ
= 950nm 5 ns
t
f
Fall Time 5
©2010 Fairchild Semiconductor Corporation www.fairchildsemi.com
QSD2030F Rev. 1.1.1 3
QSD2030F — Plastic Silicon Photodiode
Typical Performance Characteristics
Figure 4. Dark Current vs. Reverse VoltageFigure 3. Capacitance vs. Reverse Voltage
Figure 1. Reverse Light Current vs. Emitter Output Power Figure 2. Angular Response
VR–Break Down Voltage (V)
ID–Dark Current (nA)
Vr–Reverse Voltage (V)
Cj–Capacitance (pF)
051015 20 25 30 35
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
T
A
= 25°C
V
R
= 5V
T
A
= 25°C
024681012141618 20
14
12
10
8
6
4
2
0
Ee–Emitter output power (mw/cm2)
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
0° 10° 20°
30°
40°
50°
60°
70°
80°
90°
1.0
0.9
0.8
0.7
IL–Reverse Light Current Voltage (µA)
0
5
10
15
20
25
30
35
40
45
50
55
©2010 Fairchild Semiconductor Corporation www.fairchildsemi.com
QSD2030F Rev. 1.1.1 4
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Definition of Terms
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in any manner without notice.
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The datasheet is for reference information only.
Rev. I49
n
QSD2030F — Plastic Silicon Photodiode
