Absolute Maximum Ratings
Parameter Units
ID @ VGS = 10V, TC = 25°C Continuous Drain Current 38
ID @ VGS = 10V, TC = 100°C Continuous Drain Current 24
IDM Pulsed Drain Current ➀152
PD @ TC = 25°C Max. Power Dissipation 150 W
Linear Derating Factor 1.2 W/°C
VGS Gate-to-Source Voltage ±20 V
EAS Single Pulse A valanche Energy ➁150 mJ
IAR A valanche Current ➀38 A
EAR Repetitive Av alanche Energy ➀15 mJ
dv/dt Peak Diode Recovery dv/dt ➂5.5 V/ns
TJOperating Junction -55 to 150
TSTG Storage T emperature Range
Lead Temperature 300 (0.063 in. (1.6mm) from case for 10s)
Weight 11.5 (typical) g
PD - 90337G
oC
A
08/21/01
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Product Summary
Part Number BVDSS RDS(on) ID
IRF150 100V 0.055Ω 38A
For footnotes refer to the last page
REPETITIVE AVALANCHE AND dv/dt RATED IRF150
HEXFETTRANSISTORS
JANTX2N6764
THRU-HOLE (TO-204AA/AE)
JANTXV2N6764
[REF:MIL-PRF-19500/543]
The HEXFETtechnology is the key to International
Rectifier’ s advanced line of power MOSFET transistors.
The efficient geometry and unique processing of this latest
“State of the Art” design achieves: very low on-state resis-
tance combined with high transconductance; superior re-
verse energy and diode recovery dv/dt capability .
The HEXFET transistors also feature all of the well estab-
lished advantages of MOSFETs such as voltage control,
very fast switching, ease of paralleling and temperature
stability of the electrical parameters.
They are well suited for applications such as switching
power supplies, motor controls, inverters, choppers, audio
amplifiers and high energy pulse circuits.
Features:
nRepetitive Avalanche Ratings
nDynamic dv/dt Rating
nHermetically Sealed
nSimple Drive Requirements
nEase of Paralleling
TO-3
100V, N-CHANNEL
IRF150
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Thermal Resistance
Parameter Min Typ Max Units T est Conditions
RthJC Junction to Case — — 0.83
RthJA Junction to Ambient — — 30 Typical socket mount
°C/W
Source-Drain Diode Ratings and Characteristics
Parameter Min Typ Max Units T est Conditions
ISContinuous Source Current (Body Diode) — — 38
ISM Pulse Source Current (Body Diode) ➀— — 152
VSD Diode Forward Voltage — — 1.9 V Tj = 25°C, IS =38A, VGS = 0V ➃
trr Reverse Recovery Time — — 500 nS Tj = 25°C, IF = 38A, di/dt ≤100A/µs
QRR Reverse Recovery Charge — — 2.9 µc VDD ≤ 30V ➃
ton Forward Turn-On Time Intrinsic tur n-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
A
For footnotes refer to the last page
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter Min Typ Max Units T est Conditions
BVDSS Drain-to-Source Breakdown Voltage 100 — — V VGS = 0V, ID = 1.0mA
∆BVDSS/∆TJTemperature Coefficient of Breakdown — 0.13 — V/°C Reference to 25°C, ID = 1.0mA
Voltage
RDS(on) Static Drain-to-Source On-State — — 0.055 VGS = 10V, ID =24A➃
Resistance — — 0.065 VGS =10V, ID =38A ➃
VGS(th) Gate Threshold Voltage 2.0 — 4.0 V VDS = VGS, ID =250µA
gfs Forward Transconductance 9.0 — — S ( ) VDS > 15V, I DS =24A➃
IDSS Zero Gate Voltage Drain Current — — 25 VDS=80V, VGS=0V
— — 250 VDS =80V
VGS = 0V, TJ = 125°C
IGSS Gate-to-Source Leakage Forward — — 100 VGS =20V
IGSS Gate-to-Source Leakage Reverse — — -100 VGS =-20V
QgTotal Gate Charge 50 — 125 VGS =10V, ID= 38A
Qgs Gate-to-Source Charge 8.0 — 22 nC VDS =50V
Qgd Gate-to-Drain (‘Miller’) Charge 25 — 65
td(on) Turn-On Delay Time — — 35 VDD =50V, I D =38A,
trRise Time — — 1 90 VGS =10V,RG =2.35Ω
td(off) Turn-Off Delay Time — — 170
tfFall Time — — 130
LS + LDTotal Inductance — 6.1 —
Ciss Input Capacitance — 3700 VGS = 0V , VDS =25V
Coss Output Capacitance — 1100 — pF f = 1.0MHz
Crss Reverse Transfer Capacitance — 200 —
nA
Ω
nH
ns
µA
Ω
Measured from the center of
drain pad to center of source
pad
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IRF150
Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
IRF150
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Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
13 a& b
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IRF150
Fig 10a. Switching Time Test Circuit
V
DS
90%
10%
V
GS t
d(on)
t
r
t
d(off)
t
f
Fig 10b. Switching Time Waveforms
VDS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
RD
VGS
RGD.U.T.
+
-
VDD
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 9. Maximum Drain Current Vs.
Case Temperature
VGS
IRF150
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QG
QGS QGD
VG
Charge
D.U.T. V
DS
I
D
I
G
3mA
V
GS
.3µF
50KΩ
.2µF
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
10 V
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
Fig 12b. Unclamped Inductive Waveforms
Fig 12a. Unclamped Inductive Test Circuit
tp
V
(BR)DSS
I
AS
R
G
I
AS
0.01
Ω
t
p
D.U.T
L
VDS
+
-V
DD
DRIVER
A
15V
20V
.
VGS
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IRF150
Foot Notes: ➂ ISD ≤ 38A, di/dt ≤300A/µs,
VDD≤ 100V, TJ ≤ 150°C
Suggested RG =2.35 Ω
➀ Repetitive Rating; Pulse width limited by
maximum junction temperature.
➁ VDD =50V, starting TJ = 25°C,
Peak IL = 38A, VGS =10V ➃ Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
Case Outline and Dimensions —TO-204AE (Modified TO-3)
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 08/01
