UNISONIC TECHNOLOGIES CO., LTD
2N6718 NPN SILICON TRANSISTOR
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Copyright © 2005 Unisonic Technologies Co., Ltd QW-R201-056.C
NPN GENERAL PLANAR
TRANSISTOR
DESCRIPTION
The UTC 2N6718 is designed for general purpose medium
power amplifier and switching applications.
FEATURES
* High Power: 850mW
* High Current: 1A
*Pb-free plating product number: 2N6718L
*Pb-free plating product number: 2N6718G
ORDERING INFORMATION
Ordering Number Pin Assignment
Normal Lead Free Plating Halogen Free Package 12 3 Packing
2N6718-x-AB3-R 2N6718L-x-AB3-R 2N6718G-x-AB3-R SOT-89 B C E Tape Reel
2N6718-x-T6C-K 2N6718L-x-T6C-K 2N6718G-x-T6C-K TO-126C E C B Bulk
2N6718-x-T92-B 2N6718L-x-T92-B 2N6718G-x-T92-B TO-92 E C B Tape Box
2N6718-x-T92-K 2N6718L-x-T92-K 2N6718G-x-T92-K TO-92 E C B Bulk
2N6718 NPN SILICON TRANSISTOR
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ABSOLUTE MAXIMUM RATING (Ta=25℃, unless otherwise specified)
PARAMETER SYMBOL RATINGS UNIT
Collector-Base Voltage VCBO 100 V
Collector-Emitter Voltage VCEO 100 V
Emitter-Base Voltage VEBO 5 V
Collector Current (Continue) IC 1 A
Collector Current (Pulse) IC 2 A
SOT-89 0.5 W
TO-126C 1.6 W
Total Power Dissipation
TO-92
PD
850 mW
Junction Temperature TJ +150
℃
Storage Temperature TSTG -55 ~ +150 ℃
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (Ta=25℃, unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
Collector-Base Breakdown Voltage BVCBO IC=100uA 100 V
Collector-Emitter Breakdown Voltage (note) BVCEO IC=1mA 100 V
Emitter-Base Breakdown Voltage BVEBO IE=10μA 5 V
Collector-Emitter Saturation Voltage VCE(SAT) IC=350mA, IB=35mA 350 mV
Collector Cut-Off Current ICBO V
CB=80V 100 nA
hFE1 V
CE=1V, IC=50mA 80
hFE2 V
CE=1V, IC=250mA 50 300
DC Current Gain
hFE3 V
CE=1V, IC=500mA 20
Current Gain - Bandwidth Product fT VCE=10V, IC=50mA,
f=100MHz 50 MHz
Output Capacitance Cob VCB=10V, IE=0, f=1MHz 20 pF
Note: Pulse test: PulseWidth≤380μs, Duty Cycle≤2%
CLASSIFICATION OF hFE2
RANK A B
RANGE 50~115 95~300
2N6718 NPN SILICON TRANSISTOR
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TYPICAL CHARACTERISTICS
Current Gain, hFE
Saturation Voltage (mV)
110100
1000 10000
100
Collector Current, Ic (mA)
Saturation Voltage
vs. Collector Current
Saturation Voltage (mV)
10
0.1 1 100
Collector Output Capacitance
Capacitance (pF)
10000 100
Cob
1000
1
10
Collector Base Voltage (V)
VBE(SAT)@Ic=10IB
Safe Operating Area
Forward Voltage, VCE(V)
Collector Current, Ic(A)
0.01
0.1
1
10
Cutoff Frequency
vs. Collector Current
Collector Current, Ic(mA)
Cutoff Frequency (MHz)
100
1000
110
100 1 10 100
1s
1ms
100ms
fT@VCE=10V
2N6718 NPN SILICON TRANSISTOR
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TYPICAL CHARACTERISTICS
Power Derating
Ambient Temperature, Ta(℃)
Power Dissipation, PD(mW)
0
500
1000
1500
10050 150 200
0
2000
TO-126C
TO-92
SOT-89
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
