DATA SH EET
Product specification
Supersedes data of 1996 Mar 19 1999 May 06
DISCRETE SEMICONDUCTORS
BAT54 series
Schottky barrier (double) diodes
o
ok, halfpage
M3D088
1999 May 06 2
Philips Semiconductors Product specification
Schottky barrier (double) diodes BAT54 series
FEATURES
•Low forward voltage
•Guard ring protected
•Small plastic SMD package.
APPLICATIONS
•Ultra high-speed switching
•Voltage clamping
•Protection circuits
•Blocking diodes.
DESCRIPTION
Planar Schottky barrier diodes
encapsulated in a SOT23 small
plastic SMD package. Single diodes
and double diodes with different
pinning are available.
MARKING
Note
1. ∗= p : Made in Hong Kong.
∗= t : Made in Malaysia.
TYPE NUMBER MARKING
CODE(1)
BAT54 L4∗
BAT54A L42
BAT54C L43
BAT54S L44
PINNING
PIN BAT54
ACS
1ak
1a
1a
1
2 n.c. k2a2k2
3ka
1
,a
2k
1
,k
2k
1
,a
2
Fig.1 Simplified outline
(SOT23) and pin
configuration.
handbook, 2 columns
21
3
MGC421
Top view
Fig.2 BAT54 single diode
configuration (symbol).
3
12
n.c.
MLC357
Fig.3 BAT54A diode
configuration (symbol).
3
12
MLC360
Fig.4 BAT54C diode
configuration (symbol).
3
12
MLC359
Fig.5 BAT54S diode
configuration (symbol).
3
12
MLC358
1999 May 06 3
Philips Semiconductors Product specification
Schottky barrier (double) diodes BAT54 series
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
ELECTRICAL CHARACTERISTICS
Tamb =25°C unless otherwise specified.
THERMAL CHARACTERISTICS
Note
1. Refer to SOT23 standard mounting conditions.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
Per diode
VRcontinuous reverse voltage −30 V
IFcontinuous forward current −200 mA
IFRM repetitive peak forward current tp≤1s;δ≤0.5 −300 mA
IFSM non-repetitive peak forward current tp<10ms −600 mA
Ptot total power dissipation (per package) Tamb ≤25 °C−230 mW
Tstg storage temperature −65 +150 °C
Tjjunction temperature −125 °C
SYMBOL PARAMETER CONDITIONS MAX. UNIT
Per diode
VFforward voltage see Fig.6
IF= 0.1 mA 240 mV
IF=1mA 320 mV
IF=10mA 400 mV
IF=30mA 500 mV
IF= 100 mA 800 mV
IRreverse current VR= 25 V; see Fig.7 2µA
trr reverse recovery time when switched from IF=10mA
to IR= 10 mA; RL= 100 Ω;
measured at IR= 1 mA;
see Fig.9
5ns
C
ddiode capacitance f = 1 MHz; VR= 1 V; see Fig.8 10 pF
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth j-a thermal resistance from junction to
ambient note 1 500 K/W
1999 May 06 4
Philips Semiconductors Product specification
Schottky barrier (double) diodes BAT54 series
GRAPHICAL DATA
handbook, halfpage
10
IF
VF (V)
3
10
(mA)
2
10
1
10
1
1.20.80.40
MSA892
(3)(2)(1)
(3)(2)(1)
(1) Tamb = 125 °C.
(2) Tamb =85°C.
(3) Tamb =25°C.
Fig.6 Forward current as a function of forward
voltage; typical values.
0102030
V (V)
R
10
3
IR
(µA)
10
2
10
1
10
1
(1)
(2)
(3)
MSA893
(1) Tamb = 125 °C.
(2) Tamb =85°C.
(3) Tamb =25°C.
Fig.7 Reverse current as a function of reverse
voltage; typical values.
0102030
0
5
10
15
V (V)
R
Cd
(pF)
MSA891
Fig.8 Diode capacitance as a function of reverse
voltage; typical values.
f = 1 MHz; Tamb =25°C.
Fig.9 Reverse recovery definitions.
h
andbook, halfpage
90%
10%
tf
Q
dI
dt
t
IF
IR
MRC129 - 1
F
r
1999 May 06 5
Philips Semiconductors Product specification
Schottky barrier (double) diodes BAT54 series
PACKAGE OUTLINE
UNIT A1
max. bpcDE e1HELpQwv
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
97-02-28
IEC JEDEC EIAJ
mm 0.1 0.48
0.38 0.15
0.09 3.0
2.8 1.4
1.2 0.95
e
1.9 2.5
2.1 0.55
0.45 0.1
0.2
DIMENSIONS (mm are the original dimensions)
0.45
0.15
SOT23
bp
D
e1
e
A
A1
Lp
Q
detail X
HE
E
wM
vMA
B
AB
0 1 2 mm
scale
A
1.1
0.9
c
X
12
3
Plastic surface mounted package; 3 leads SOT23
1999 May 06 6
Philips Semiconductors Product specification
Schottky barrier (double) diodes BAT54 series
DEFINITIONS
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
Data sheet status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
1999 May 06 7
Philips Semiconductors Product specification
Schottky barrier (double) diodes BAT54 series
NOTES
© Philips Electronics N.V. SCA
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Internet: http://www.semiconductors.philips.com
1999 64
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Printed in The Netherlands 115002/00/02/pp8 Date of release: 1999 May 06 Document order number: 9397 750 05917
