3875081 GE SOLID STATE Standard Power MOSFETs OL DE 3675081 0018269 4 I o7-39-/) OiE 18269 IRF130, IRF131, (RF132, IRF133 File Number 1566 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors 12A and 14A, 60V-100V fps(on) = 0.18 O and 0.250 Features: @ SOA fs power-dissipation limited @ Nanosecond switching speeds @ Linear transfer characteristics High input impedance Majority carrier device The IRF130, 1RF131, IRF132 and IRF133 are n-channel enhancement-mode silicon-gate power field- effect transistors designed for applications such as switch- ing regulators, switching converters, motor drivers, relay drivers, and drivers for high-power bipolar switching tran- sistors requiring high speed and low gate-drive power. These types can be operated directly from integrated circuits, The IRF-types are supplied in the JEDEC TO-204AA steel package. Absolute Maximum Ratings Parameter Drain - Source =20 Ovain Current inductive Operating Storage Tempsrature Range head N-CHANNEL ENHANCEMENT MODE o $ 92CS-33741 TERMINAL DIAGRAM TERMINAL DESIGNATION DRAIN SOURCE (FLANGE) @) %) GATE 92cs-3780) JEDEC TO-204AA IRFI31 IRF132 60 100 12 48 14) and L= 48 ~55 to 160 from case for 108} 2123875081 GE SOLID STATE U1 eff Electrical Characteristics @Tc = 25C (Unless Otherwise Specified) Parameter Type Min. | Typ. | Max. Units Test Conditions BVpgg Orain- Source Breakdown Voltage IRF 130 100 _ - Vv Veg = OV tAF132 IAFT3t wnevaa | | - | ~ v Ip = 250xA Vasieny_ Gate Threshold Voltage ALL 2.0 - 4.0 Vv Vos = Vos: lo = 250nA loss Gate-Saurce Leakage Forward ALL - - 100 nA Ves = 20V ess Gate-Source Laskage Revarse ALL ~ 4-100 nA Ves = -20V Ipsg Zero Gate Voltage Drain Current ALL _ - 250 BA Vos = Max. Rating, Vgsg = OV = __|.1000 pA Vs = Max. Rating x 0.8, Vgg = OV, Te = 128C Ipfon) On State Drain Current IRF130 14 _ _ A IRF t34 Vos >| a, Vgg = 10V DS ?'Olon) * "OS(on} mex. GS IRFI32 | 49 _ _ A (RF133 Roston} Static Drein Rource On-State Rel 0 _ 0.14 | 0.18 o Vgg = 10V.Ip = 8.0A E132. | _ozofoas | IRF133 * * Gis Forward Tensconductance au | 40 }86 |] | s@) | ps Toron)*Apston) max. tp = 8.08 Cigg input au" | 600 { 00_ | PF] Vas = OV. Vos = 28V, = 1.0 MHz Coss Output Capacitance ALL = 300 | S00 pF SeeFig 10 Cras Reverse Transfer Capacitance ALL - 100 | 150 pF tyton) _ Turp-On Delay Time ALL _ = 30 ns Vop * 96. Ip = 8.04.2, = 150 te Rise Time ALL - - 75 |- ons See Fig. 17 tafofty Turn-OFf Dafay Time ALL = = 40 ns (MOSFET switching times are essentially u Fall Time ALL = ~ 45 ne independent of operating temperature.) Oo Total Gate Charge _ Ves = 10V, Ip = 1BA, Vpg = 0.8 Max. Rating. (Gate-Source Pius Gate-Drain} ALL 18 30 nc See Fig. 18 for test circuit. (Gate charge is essantially Q s Gate Source Charge ALL _ 9.0 _ nc independent of operating temperature.) | Q5g _ Gato-Drain ((Miller] Charge ALL - 9.0 - nc to Internal Drein inductance ALL - 5.0 - nH Measured batween Modified MOSFET the contact screw on symbol showing the haader thatis closer to internal device source and gate pins Inductances. and canter of die. o ls Internal Source Inductance ALL ~- 12.5 | oH Measured from the to source pin, 6mm (0.28 in.] from header G Ss and source bonding pad. $s Thermal Resistance Finsc Junction-to-Case ALL = - 1.67 | C/W Rincg _ Casa-to-Sink ALL = 0.1 = SC Mounung surface flat, smooth, and greased. ipsa _Junction-to-Ambiant ALL = = 30 AL Free Air Operation Source-Drain Diode Ratings and Characteristics Ig Contnuous Source Current IRF130 _ _ 14 A Modified MOSFET symbol (Body Diode} IRF134 showing the integra! IRF132 teverse P-N junction rectifier, D weiga | ~ | ~ | | A ism Pulse Source Current (AF 130 - _ 56 A G (Body Dicdel @ IRF131 TAF 132 $ inFi33 | ~ | ~ | 8 | 4 Vsp _ Diode Forward Veltage @ 1RFISO | _ _ = - - IRFI31 25 v Te = 25C. lg = 144, Vgg = OV IAFI32 _ _ _ inFiaa | - | 23 v Te = 25C, Ig = 12A, Vgg = OV ter Reverse Recovery Time ALL - 360] ns Ty = 180C, (5 = 144, dipfdt = 100A/ys Opn Reverse Recovered Charge ALL - 2.1 - ac Ty = 160C. Ip = 144A, dig/dt = 100A/ps ton Forward Turn on Time ALL Intnnsic tum on time is neghigible. Turn-on speed is substantially controlled by Lg + Lp. @Ty = 25C to 150C. @Pulse Test Pulse width < 300us. Duty Cycle < 2%. Repetiuve Rating: Pulse width limited by max junction temperature See Transient Thermal Impedance Curve (Fig. 5). 3875081 Oo1ae70 S 1 5.7-39-// Standard Power MOSFETs IRF130, IRF131, IRF132, IRF133 213 wae enbnenay3875081 GE SOLID STATE Standard IRF130, Zhoclt/Aingc, NOAMALIZED EFFECTIVE TRANSIENT THERMAL IMPEDANCE (PER UNIT) 214_. Power MOSFETs oO. de Bp sazsoas go1ae71 7 iE T-39-/] IRF131, IRF132, IRF133 20 a = = = 12 = 5 = 3 z& = 5 3 4 a 10 20 0 40 ps DRAIN TO SOURCE VOLTAGE {VOLTS) Fig. 1 Typical Output Characteristics WO sPULSE TEST a = = = = z = = 3 = < S 3 a o4 98 az 16 Vos DRAIN TO SOURCE VOLFAGE IVOLTS) Fig. 3 Typical Saturation Characteristics 2 8: R Bow & a a 001 wh 2 5 we 2 5 jo3 2 40 Ip, ORAIN CURRENT (AMPERES) ip, DRAIN CURRENT {AMPERES) > 'ton} * Ty? Tys Q 2 4 6 8 10 Vas. GATE TO SOURCE VOLTAGE (V0.5) Fig. 2 - Typical Transfer Characteristics Roston} 10 us I 100 ys Tet Ty= 1509C MAX 31 SINGLE PULSE 10 2 4 a 20 50 100 200 Vg. DRAIN TO SOURCE VOLTAGE [VOLTS} Fig. 4 Maximum Safe Operating Area | 1 DUTY FACTOR, 0 = z 2 PERUNIT BASE= Ryne * 167 DEG.CW. 2 Tyy- Tes Zunycttl. 5 10-1 2 5 10 2 5 10 ty, SQUARE WAVE PULSE DURATION (SECONDS) Fig. S Maximum Effective Transient Thermal Impedance, Junction-to-Case Vs. Pulse DurationOL DEM 3875081 O01ae?e 4 i 3875081 GE SOLID STATE O1E 18272 bp T39-/1 Standard Power MOSFETs IRF130, IRF134, IRF132, IRF133 {y. TRANSCONDUCTANCE (SIEMENS) tpr. REVERSE ORAIN CURRENT (AMPERES) 3 g 5 10 15 20 wu oO 1 2 3 4 Ip, DRAIN CURRENT {AMPERES) Vgo. SDURCE-TO ORAIN VOLTAGE (VDLTS) Fig. 6 Typical Transconductance Vs. Drain Current Fig. 7 Typical Source-Drain Diode Forward Voltage ass es BVogg, ORAIN TO-SOURCE BREAKDOWN VOLTAGE (NOAMALIZED} Fosion). DRAIN TO-SOURCE ON RESISTANCE (NORMALIZED) 4g 0 aa 80 0 160 40 0 40 80 120 Ty, JUNCTION TEMPERATURE (9C) Ty. JUNCTION TEMPERATURE (C) Fig. 8 Breakdown Voltage Vs. Temperature Fig. 3 Normalized On-Resistance Vs. Temperature C, CAPACITANCE {pF} Vgs GATE TO SOURCE VOLTAGE [VOLTS] Ip# FOR TEST CIRCUIT FIGUAE 8 o 10 20 ww a4 50 a 8 16 a 32 a Vos. ORAIN-TO SOUACE VOLTAGE [VOLTS) Q,, TOTAL GATE CHARGE {nC] Fig. 10 Typical Capacitance Vs. Drain-to-Source Voltage Fig. 11 Typical Gate Charge Vs. Gate-to-Source VoltageOl DE s8?soal o01ac73 GO i 3875081 GE SOLID STATE O1E 18273 o7-397-// Standard Power MOSFETs IRF130, IRF131, [RF132, IRF133 ag Fosters MEASURED WITH PULSE OF 20 ps OUAATION. INITIAL Ty {HEATING 05 OF 2.0 os PULSE Oz Rosfon ORAIN-TO-SOURCE ON RESISTANCE (OHMS) lp, ORAIN CURRENT (AMPERES) Q a 10 20 0 0 50 be 5 50 8 100 15 150 Ip. ORAIN CURAENT {AMPERES} To, CASE TEMPERATURE (C) Fig. 12 Typical On-Resistance Vs. Drain Current Fig. 13 Maximum Drain Current Vs. Case Temperature to 10 Fp, POWER DISSIPATION (WAFTS} ~ = 0 a 4g 6a 0 100 WO 140 Te, CASE TEMPERATURE (C} Fig. 14 Power Vs. Temperature Derating Curve VARY ty TO OBTAIN AEQUIRED FEAK 1, = h Fig. 15 Clamped Inductive Test Circuit Fig. 16 Clamped Inductive Waveforms *Yos CURRENT (ISOLATED REGULATOR SUPPLY) Vop =v SAME TYPE Iv T ou AS OUT BATTERY | PRE = EkHz Ve tre tas TO SCOPE Fig. 17 Switching Time Text Circuit Vos 'c a (0 CURRENT = CURRENT SHUNT SHUNT Fig. 18 Gate Charge Test Circuit 216