EGP30A-EGP30K
EGP30A - EGP30K, Rev. A
EGP30A - EGP30K
3.0 Ampere Glass Passivated High Efficiency Rectifiers
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Electrical Characteristics TA = 25°C unless otherwise noted
1999 Fairchild Semiconductor Corporation
Symbol Parameter Value Units
IOAverage Rectified Current
.375 " lead length @ TA = 55°C3.0 A
if(surge) Peak Forward Surge Current
8.3 ms single half-sine-wave
Superimposed on rated l oad (JEDEC method)
125 A
PDTotal Device Dissipation
Derate above 25°C6.25
50 W
mW/°C
RθJA Thermal Resistance, Junction to Ambient 20 °C/W
RθJL Thermal Resistance, Junction to Lead 8.5 °C/W
TstgStorage Temperature Range -65 to +150 °C
TJOperating Junction Temperature -65 to +150 °C
Features
•Glass passivated cavity-free junction.
•High surge current capability.
•Low leakage current.
•Superfast recovery time for high
efficiency.
•Low forward voltage, high current
capability.
Parameter Device Units
30A 30B 30C 30D 30F 30G 30J 30K
Peak Repeti tive Reverse Voltage 50 100 150 200 300 400 600 800 V
Maximum RMS Voltage 35 70 105 140 210 280 420 560 V
DC Reverse Voltage (Rated VR) 50 100 150 200 300 400 600 800 V
Maximum Reverse Current
@ rated VR TA = 25°C
TA = 125°C5.0
100 µA
µA
Maximum Reverse Recovery Time
IF = 0.5 A, IR = 1.0 A, I rr = 0.25 A 50 75 nS
Maximum Forward Voltage @ 3.0 A 0.95 1.25 1.7 V
Typical Junction Capacitance
VR = 4.0 V, f = 1.0 MHz 95 75 pF
DO-201AD
COLOR BAND DENOTES CATHODE
Dimensions in inches (mm)
0.052(1.32)
0.048(1.22)
1.0 min(25.4)
0.210(5.33)
0.190(4.83)
0.375(9.53)
0.285(7.24)
Discrete POWER & Signal
Technologies
EGP30A-EGP30K
EGP30A - EGP30K, Rev. A
Typical Characteristics
For ward Current Derating Curve
0 25 50 75 100 125 150 175
0
1
2
3
AM BIEN T TE MPERATURE ( C)
FORWARD CURRE NT (A)
º
SINGLE PHA SE
HALF WAVE
60 HZ
RESISTIV E OR
INDU CTIVE LOAD
.375 " (9 .0 mm ) LEAD
LENGTHS
Non-Repetitive Su rge Cu rrent
12 51020 50100
0
25
50
75
100
125
150
175
NUMBE R OF CYCLES AT 60H z
PEA K FORWARD SURGE CURRE NT (A)
F orward Characteris tics
0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8
0.01
0.1
1
10
50
FORWARD VOLTAGE (V)
FORWARD CURRENT (A)
Puls e Width = 300µs
2% Duty Cycle
T = 25 C
º
A
EGP30A-EGP30D
EGP30F-EGP30K
T = 150 C
º
A
Junction Capacitance
0.1 1 10 100 1000
0
30
60
90
120
150
180
210
REVERSE VOLTAGE (V)
C A PACI TANC E ( p F)
EGP30F-EGP30K
EGP30A-EGP30D
Pulse
Generator
(Note 2)
50
Ω
NONINDUCTIVE 50
Ω
NONINDUCTIVE
DUT
(-)
(+)
OSCILLOSCOPE
(Note 1)
50
Ω
NONINDUCTIVE
50V
(approx)
NOTES:
1. Rise time = 7.0 ns max; Input impedance = 1.0 megaohm 22 pf.
2. Rise time = 10 ns max; Source impedance = 50 ohms.
Reverse Recovery Time Characterstic and Test Circuit Diagram
1.0cm SET TIME BASE FOR
trr
+0.5A
0
-0.25A
-1.0A
5/ 10 ns/ cm
Rev erse Charac teristics
0 20 40 60 80 100 120 140
0.001
0.01
0.1
1
10
100
PERCENT OF RATE D PEAK REVERSE VOL TAGE (%)
REVERSE CURRENT ( A)
µ
T = 25 C
º
A
T = 75 C
º
A
T = 125 C
º
A
T = 150 C
º
A
TRADEMARKS
ACEx™
CoolFET™
CROSSVOLT™
E2CMOSTM
FACT™
FACT Quiet Series™
FAST®
FASTr™
GTO™
HiSeC™
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This datasheet contains the design specifications for
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