BCM857BS,135 - NEXPERIA

Important notice

Dear Customer,

On 7 February 2017 the former NXP Standard Product business became a new company with the

tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS

semiconductors with its focus on the automotive, industrial, computing, consumer and wearable

application markets

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use

the references to Nexperia, as shown below.

Instead of http://www.nxp.com, http://www.philips.com/ or http://www.semiconductors.philips.com/,

use http://www.nexperia.com

Instead of sales.addresses@www.nxp.com or sales.addresses@www.semiconductors.philips.com, use

salesaddresses@nexperia.com (email)

Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on

the version, as shown below:

reserved

Should be replaced with:

If you have any questions related to the data sheet, please contact our nearest sales office via e-mail

or telephone (details via salesaddresses@nexperia.com). Thank you for your cooperation and

understanding,

Kind regards,

Team Nexperia

1. Product proﬁle

1.1 General description

PNP/PNP matched double transistors in small Surface-Mounted Device (SMD) plastic

packages. The transistors are fully isolated internally.

1.2 Features

nCurrent gain matching

nBase-emitter voltage matching

nDrop-in replacement for standard double transistors

1.3 Applications

nCurrent mirror

nDifferential ampliﬁer

1.4 Quick reference data

BCM857BV; BCM857BS;

BCM857DS

PNP/PNP matched double transistors

Rev. 06 — 28 August 2009 Product data sheet

Table 1. Product overview

Type number Package NPN/NPN

complement Matched version of

NXP JEITA

BCM857BV SOT666 - BCM847BV BC857BV

BCM857BS SOT363 SC-88 BCM847BS BC857BS

BCM857DS SOT457 SC-74 BCM847DS -

Table 2. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

Per transistor

VCEO collector-emitter voltage open base - - −45 V

ICcollector current - - −100 mA

hFE DC current gain VCE =−5V;

IC=−2mA 200 290 450

Product data sheet Rev. 06 — 28 August 2009 2 of 15

NXP Semiconductors BCM857BV/BS/DS

PNP/PNP matched double transistors

[1] The smaller of the two values is taken as the numerator.

[2] The smaller of the two values is subtracted from the larger value.

2. Pinning information

3. Ordering information

4. Marking

[1] * = -: made in Hong Kong

* = p: made in Hong Kong

* = t: made in Malaysia

* = W: made in China

Per device

hFE1/hFE2 hFE matching VCE =−5V;

IC=−2mA [1] 0.9 1 -

VBE1−VBE2 VBE matching VCE =−5V;

IC=−2mA [2] --2mV

Table 2. Quick reference data

…continued

Symbol Parameter Conditions Min Typ Max Unit

Table 3. Pinning

Pin Description Simpliﬁed outline Symbol

1 emitter TR1

2 base TR1

3 collector TR2

4 emitter TR2

5 base TR2

6 collector TR1

001aab555

6 45

1 32

sym018

TR1 TR2

Table 4. Ordering information

Type number Package

Name Description Version

BCM857BV - plastic surface-mounted package; 6 leads SOT666

BCM857BS SC-88 plastic surface-mounted package; 6 leads SOT363

BCM857DS SC-74 plastic surface-mounted package (TSOP6); 6 leads SOT457

Table 5. Marking codes

Type number Marking code[1]

BCM857BV 3B

BCM857BS A9*

BCM857DS R8

Product data sheet Rev. 06 — 28 August 2009 3 of 15

NXP Semiconductors BCM857BV/BS/DS

PNP/PNP matched double transistors

5. Limiting values

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard

footprint.

[2] Reﬂow soldering is the only recommended soldering method.

6. Thermal characteristics

Table 6. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

Per transistor

VCBO collector-base voltage open emitter - −50 V

VCEO collector-emitter voltage open base - −45 V

VEBO emitter-base voltage open collector - −5V

ICcollector current - −100 mA

ICM peak collector current single pulse;

tp≤1ms -−200 mA

Ptot total power dissipation Tamb ≤25 °C

SOT666 [1][2] - 200 mW

SOT363 [1] - 200 mW

SOT457 [1] - 250 mW

Per device

Ptot total power dissipation Tamb ≤25 °C

SOT666 [1][2] - 300 mW

SOT363 [1] - 300 mW

SOT457 [1] - 380 mW

Tjjunction temperature - 150 °C

Tamb ambient temperature −65 +150 °C

Tstg storage temperature −65 +150 °C

Table 7. Thermal characteristics

Symbol Parameter Conditions Min Typ Max Unit

Per transistor

Rth(j-a) thermal resistance from

junction to ambient in free air

SOT666 [1][2] - - 625 K/W

SOT363 [1] - - 625 K/W

SOT457 [1] - - 500 K/W

Product data sheet Rev. 06 — 28 August 2009 4 of 15

NXP Semiconductors BCM857BV/BS/DS

PNP/PNP matched double transistors

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

[2] Reﬂow soldering is the only recommended soldering method.

7. Characteristics

Per device

Rth(j-a) thermal resistance from

junction to ambient in free air

SOT666 [1][2] - - 416 K/W

SOT363 [1] - - 416 K/W

SOT457 [1] - - 328 K/W

Table 7. Thermal characteristics

…continued

Symbol Parameter Conditions Min Typ Max Unit

Table 8. Characteristics

amb

=25

C unless otherwise speciﬁed

Symbol Parameter Conditions Min Typ Max Unit

Per transistor

ICBO collector-base cut-off

current VCB =−30 V;

IE=0A --−15 nA

VCB =−30 V;

IE=0A;

Tj= 150 °C

--−5µA

IEBO emitter-base cut-off

current VEB =−5V;

IC=0A --−100 nA

hFE DC current gain VCE =−5V;

IC=−10 µA- 250 -

VCE =−5V;

IC=−2mA 200 290 450

VCEsat collector-emitter

saturation voltage IC=−10 mA;

IB=−0.5 mA -−50 −200 mV

IC=−100 mA;

IB=−5mA -−200 −400 mV

VBEsat base-emitter

saturation voltage IC=−10 mA;

IB=−0.5 mA [1] -−760 - mV

IC=−100 mA;

IB=−5mA [1] -−920 - mV

VBE base-emitter voltage VCE =−5V;

IC=−2mA [2] −600 −650 −700 mV

VCE =−5V;

IC=−10 mA [2] --−760 mV

Cccollector capacitance VCB =−10 V;

IE=i

e=0A;

f=1MHz

- - 2.2 pF

Ceemitter capacitance VEB =−0.5 V;

IC=i

c=0A;

f=1MHz

-10-pF

Product data sheet Rev. 06 — 28 August 2009 5 of 15

NXP Semiconductors BCM857BV/BS/DS

PNP/PNP matched double transistors

[1] VBEsat decreases by about 1.7 mV/K with increasing temperature.

[2] VBE decreases by about 2 mV/K with increasing temperature.

[3] The smaller of the two values is taken as the numerator.

[4] The smaller of the two values is subtracted from the larger value.

fTtransition frequency VCE =−5V;

IC=−10 mA;

f = 100 MHz

100 175 - MHz

NF noise ﬁgure VCE =−5V;

IC=−0.2 mA;

RS=2kΩ;

f = 10 Hz to

15.7 kHz

- 1.6 - dB

VCE =−5V;

IC=−0.2 mA;

RS=2kΩ;

f = 1 kHz;

B = 200 Hz

- 3.1 - dB

Per device

hFE1/hFE2 hFE matching VCE =−5V;

IC=−2mA [3] 0.9 1 -

VBE1−VBE2 VBE matching VCE =−5V;

IC=−2mA [4] --2mV

Table 8. Characteristics

…continued

amb

=25

C unless otherwise speciﬁed

Symbol Parameter Conditions Min Typ Max Unit

Product data sheet Rev. 06 — 28 August 2009 6 of 15

NXP Semiconductors BCM857BV/BS/DS

PNP/PNP matched double transistors

Tamb =25°CV

CE =−5V

(1) Tamb = 100 °C

(2) Tamb =25°C

(3) Tamb =−55 °C

Fig 1. Collector current as a function of

collector-emitter voltage; typical values Fig 2. DC current gain as a function of collector

current; typical values

IC/IB=20

(1) Tamb =−55 °C

(2) Tamb =25°C

(3) Tamb = 100 °C

IC/IB=20

(1) Tamb = 100 °C

(2) Tamb =25°C

(3) Tamb =−55 °C

Fig 3. Base-emitter saturation voltage as a function

of collector current; typical values Fig 4. Collector-emitter saturation voltage as a

function of collector current; typical values

006aaa540

VCE (V)

0−10−8−4−6−2

−0.08

−0.12

−0.04

−0.16

−0.20

(A)

−0.25

IB (mA) = −2.5

−0.5

−0.75

−1.0

−1.25

−1.5

−1.75

−2.0

−2.25

006aaa541

200

400

600

hFE

IC (mA)

−10−2−103

−102

−10−1−10−1

(1)

(2)

(3)

006aaa542

IC (mA)

−10−1−103

−102

−1−10

−0.5

−0.9

−1.3

−0.3

−0.7

−1.1

VBEsat

(V)

−0.1

(1)

(2)

(3)

006aaa543

−1

−10−1

−10

VCEsat

(V)

−10−2

IC (mA)

−10−1−103

−102

−1−10

(1)

(2)

(3)

Product data sheet Rev. 06 — 28 August 2009 7 of 15

NXP Semiconductors BCM857BV/BS/DS

PNP/PNP matched double transistors

VCE =−5 V; Tamb =25°CV

CE =−5 V; Tamb =25°C

Fig 5. Base-emitter voltage as a function of collector

current; typical values Fig 6. Transition frequency as a function of collector

current; typical values

f = 1 MHz; Tamb =25°C f = 1 MHz; Tamb =25°C

Fig 7. Collector capacitance as a function of

collector-base voltage; typical values Fig 8. Emitter capacitance as a function of

emitter-base voltage; typical values

006aaa544

−0.6

−0.8

−1

VBE

(V)

−0.4

IC (mA)

−10−1−103

−102

−1−10 IC (mA)

−1−102

−10

006aaa545

102

103

(MHz)

VCB (V)

0−10−8−4−6−2

006aaa546

(pF)

006aaa547

VEB (V)

0−6−4−2

(pF)

Product data sheet Rev. 06 — 28 August 2009 8 of 15

NXP Semiconductors BCM857BV/BS/DS

PNP/PNP matched double transistors

8. Application information

9. Package outline

Fig 9. Current mirror Fig 10. Differential ampliﬁer

006aaa524

VCC

lout

TR2TR1

006aaa526

IN2IN1 TR2TR1

OUT2

V−

V+

OUT1

Fig 11. Package outline SOT666 Fig 12. Package outline SOT363 (SC-88)

Fig 13. Package outline SOT457 (SC-74)

Dimensions in mm 04-11-08

1.7

1.5

1.7

1.5

1.3

1.1

0.18

0.08

0.27

0.17

0.5

pin 1 index

123

456

0.6

0.5

0.3

0.1

06-03-16Dimensions in mm

0.25

0.10

0.3

0.2

pin 1

index

1.3

0.65

2.2

2.0 1.35

1.15

2.2

1.8 1.1

0.8

0.45

0.15

132

465

04-11-08Dimensions in mm

3.0

2.5 1.7

1.3

3.1

2.7

pin 1 index

1.9

0.26

0.10

0.40

0.25

0.95

1.1

0.9

0.6

0.2

132

Product data sheet Rev. 06 — 28 August 2009 9 of 15

NXP Semiconductors BCM857BV/BS/DS

PNP/PNP matched double transistors

10. Packing information

[1] For further information and the availability of packing methods, see Section 14.

[2] T1: normal taping

[3] T2: reverse taping

Table 9. Packing methods

The indicated -xxx are the last three digits of the 12NC ordering code.

[1]

Type number Package Description Packing quantity

3000 4000 8000 10000

BCM857BV SOT666 2 mm pitch, 8 mm tape and reel - - -315 -

4 mm pitch, 8 mm tape and reel - -115 - -

BCM857BS SOT363 4 mm pitch, 8 mm tape and reel; T1 [2] -115 - - -135

4 mm pitch, 8 mm tape and reel; T2 [3] -125 - - -165

BCM857DS SOT457 4 mm pitch, 8 mm tape and reel; T1 [2] -115 - - -135

4 mm pitch, 8 mm tape and reel; T2 [3] -125 - - -165

Product data sheet Rev. 06 — 28 August 2009 10 of 15

NXP Semiconductors BCM857BV/BS/DS

PNP/PNP matched double transistors

11. Soldering

Reﬂow soldering is the only recommended soldering method.

Fig 14. Reﬂow soldering footprint SOT666

Fig 15. Reﬂow soldering footprint SOT363 (SC-88)

solder lands

placement area

occupied area

solder paste

sot666_fr

2.75

2.45

2.1

1.6

0.4

(6×)

0.55

(2×)

0.25

(2×)

0.6

(2×)

0.65

(2×)

0.3

(2×)

0.325

(4×)

0.45

(4×)

0.5

(4×)

0.375

(4×)

1.72

1.7

1.0750.538

Dimensions in mm

solder lands

solder resist

occupied area

solder paste

sot363_fr

2.65

2.35 0.4 (2×)

0.6

(2×)

0.5

(4×)

0.5

(4×)

0.6

(4×)

0.6

(4×)

1.5

1.8

Dimensions in mm

Product data sheet Rev. 06 — 28 August 2009 11 of 15

NXP Semiconductors BCM857BV/BS/DS

PNP/PNP matched double transistors

Fig 16. Wave soldering footprint SOT363 (SC-88)

Dimensions in mm

Fig 17. Reﬂow soldering footprint SOT457 (SC-74)

sot363_fw

solder lands

solder resist

occupied area

preferred transport

direction during soldering

5.3

1.3 1.3

1.5

0.3

1.5

4.5

2.45

2.5

Dimensions in mm

solder lands

solder resist

occupied area

solder paste

0.95

2.825 0.45 0.55

1.60

1.95

3.45

1.70

3.10

3.20

3.30

msc422

Product data sheet Rev. 06 — 28 August 2009 12 of 15

NXP Semiconductors BCM857BV/BS/DS

PNP/PNP matched double transistors

Dimensions in mm

Fig 18. Wave soldering footprint SOT457 (SC-74)

1.40

4.30

5.30

0.45

msc423

1.45 4.45

5.05

solder lands

solder resist

occupied area

Product data sheet Rev. 06 — 28 August 2009 13 of 15

NXP Semiconductors BCM857BV/BS/DS

PNP/PNP matched double transistors

12. Revision history

Table 10. Revision history

Document ID Release date Data sheet status Change notice Supersedes

BCM857BV_BS_DS_6 20090828 Product data sheet - BCM857BV_BS_DS_5

Modiﬁcations: •This data sheet was changed to reﬂect the new company name NXP Semiconductors,

including new legal deﬁnitions and disclaimers. No changes were made to the technical

content.

•Figure 12 “Package outline SOT363 (SC-88)”: updated

•Figure 14 “Reﬂow soldering footprint SOT666”: updated

•Figure 15 “Reﬂow soldering footprint SOT363 (SC-88)”: updated

•Figure 16 “Wave soldering footprint SOT363 (SC-88)”: updated

•Figure 18 “Wave soldering footprint SOT457 (SC-74)”: updated

BCM857BV_BS_DS_5 20060627 Product data sheet - BCM857BS_DS_4

BCM857BS_DS_4 20060216 Product data sheet - BCM857BS_DS_3

BCM857BS_DS_3 20060130 Product data sheet - BCM857BS_2

BCM857BS_2 20050411 Product data sheet - BCM857BS_1

BCM857BS_1 20040914 Product data sheet - -

Product data sheet Rev. 06 — 28 August 2009 14 of 15

NXP Semiconductors BCM857BV/BS/DS

PNP/PNP matched double transistors

13. Legal information

13.1 Data sheet status

[1] Please consult the most recently issued document before initiating or completing a design.

[2] The term ‘short data sheet’ is explained in section “Deﬁnitions”.

[3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status

information is available on the Internet at URL http://www.nxp.com.

13.2 Deﬁnitions

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in

modiﬁcations or additions. NXP Semiconductors does not give any

representations or warranties as to the accuracy or completeness of

information included herein and shall have no liability for the consequences of

use of such information.

Short data sheet — A short data sheet is an extract from a full data sheet

with the same product type number(s) and title. A short data sheet is intended

for quick reference only and should not be relied upon to contain detailed and

full information. For detailed and full information see the relevant full data

sheet, which is available on request via the local NXP Semiconductors sales

ofﬁce. In case of any inconsistency or conﬂict with the short data sheet, the

full data sheet shall prevail.

13.3 Disclaimers

General — Information in this document is believed to be accurate and

reliable. However, NXP Semiconductors does not give any representations or

warranties, expressed or implied, as to the accuracy or completeness of such

information and shall have no liability for the consequences of use of such

information.

Right to make changes — NXP Semiconductors reserves the right to make

changes to information published in this document, including without

limitation speciﬁcations and product descriptions, at any time and without

notice. This document supersedes and replaces all information supplied prior

to the publication hereof.

Suitability for use — NXP Semiconductors products are not designed,

authorized or warranted to be suitable for use in medical, military, aircraft,

space or life support equipment, nor in applications where failure or

malfunction of an NXP Semiconductors product can reasonably be expected

to result in personal injury, death or severe property or environmental

damage. NXP Semiconductors accepts no liability for inclusion and/or use of

NXP Semiconductors products in such equipment or applications and

therefore such inclusion and/or use is at the customer’s own risk.

Applications — Applications that are described herein for any of these

products are for illustrative purposes only. NXP Semiconductors makes no

representation or warranty that such applications will be suitable for the

speciﬁed use without further testing or modiﬁcation.

Limiting values — Stress above one or more limiting values (as deﬁned in

the Absolute Maximum Ratings System of IEC 60134) may cause permanent

damage to the device. Limiting values are stress ratings only and operation of

the device at these or any other conditions above those given in the

Characteristics sections of this document is not implied. Exposure to limiting

values for extended periods may affect device reliability.

Terms and conditions of sale — NXP Semiconductors products are sold

subject to the general terms and conditions of commercial sale, as published

at http://www.nxp.com/proﬁle/terms, including those pertaining to warranty,

intellectual property rights infringement and limitation of liability, unless

explicitly otherwise agreed to in writing by NXP Semiconductors. In case of

any inconsistency or conﬂict between information in this document and such

terms and conditions, the latter will prevail.

No offer to sell or license — Nothing in this document may be interpreted

or construed as an offer to sell products that is open for acceptance or the

grant, conveyance or implication of any license under any copyrights, patents

or other industrial or intellectual property rights.

Export control — This document as well as the item(s) described herein

may be subject to export control regulations. Export might require a prior

authorization from national authorities.

Quick reference data — The Quick reference data is an extract of the

product data given in the Limiting values and Characteristics sections of this

document, and as such is not complete, exhaustive or legally binding.

13.4 Trademarks

Notice: All referenced brands, product names, service names and trademarks

are the property of their respective owners.

14. Contact information

For more information, please visit: http://www.nxp.com

For sales ofﬁce addresses, please send an email to: salesaddresses@nxp.com

Document status[1][2] Product status[3] Deﬁnition

Objective [short] data sheet Development This document contains data from the objective speciﬁcation for product development.

Preliminary [short] data sheet Qualiﬁcation This document contains data from the preliminary speciﬁcation.

Product [short] data sheet Production This document contains the product speciﬁcation.

NXP Semiconductors BCM857BV/BS/DS

PNP/PNP matched double transistors

For more information, please visit: http://www.nxp.com

For sales office addresses, please send an email to: salesaddresses@nxp.com

Date of release: 28 August 2009

Document identifier: BCM857BV_BS_DS_6

Please be aware that important notices concerning this document and the product(s)

described herein, have been included in section ‘Legal information’.

15. Contents

1 Product proﬁle . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.1 General description. . . . . . . . . . . . . . . . . . . . . . 1

1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.4 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1

2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2

3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2

4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3

6 Thermal characteristics. . . . . . . . . . . . . . . . . . . 3

7 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 4

8 Application information. . . . . . . . . . . . . . . . . . . 8

9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8

10 Packing information. . . . . . . . . . . . . . . . . . . . . . 9

11 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

12 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 13

13 Legal information. . . . . . . . . . . . . . . . . . . . . . . 14

13.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 14

13.2 Deﬁnitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

13.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 14

13.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 14

14 Contact information. . . . . . . . . . . . . . . . . . . . . 14

15 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15