DPZ512X16IA3-17M - DPAC Technologies Corp.

8 Megabit FLASH EEPROM

DPZ512X16In3

DESCRIPTION:

The DPZ512X16In3 ‘’STACK’’ modules are a revolutionary new

memory subsystem using Dense-Pac Microsystems’ ceramic

Stackable Leadless Chip Carriers (SLCC). Available in straight

leaded, ‘’J’’ leaded or gullwing leaded packages, or mounted on a

50-pin PGA co-fired ceramic substrate. The module packs

8-Megabits of FLASH EEPROM in an area as small as 0.463 in2,

while maintaining a total height as low as 0.349 inches.

The DPZ512X16In3 STACK modules contain four individual SLCC

packages each containing two 128K x 8 FLASH memory devices.

Each SLCC is hermetically sealed making the module suitable for

commercial, industrial and military applications.

By using SLCCs, the ‘’Stack’’ family of modules offer a higher board

density of memory than available with conventional through-hole,

surface mount or hybrid techniques.

FEATURES:

•Organization:

512K x 16 or 1 Meg x 8

•Fast Access Times (max.):

120, 150, 170, 200, 250ns

•Fully Static Operation - No clock or refresh required

•TTL Compatible Inputs and Outputs

•Common Data Inputs and Outputs

•10,000 Erase/Program Cycles (min.)

•Packages Available:

48 - Pin SLCC Stack

48 - Pin Straight Leaded Stack

48 - Pin ‘’J’’ Leaded Stack

48 - Pin Gullwing Leaded Stack

50 - Pin PGA Dense-Stack

DPZ512X16IH3

DPZ512X16IJ3

DPZ512X16IA3

DPZ512X16IY3

DPZ512X16II3

This document contains information on a product that is currently released

to production at Dense-Pac Microsystems, Inc. Dense-Pac reserves the

right to change products or specifications herein without prior notice.

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PIN-OUT DIAGRAM

FUNCTIONAL BLOCK DIAGRAM

48 - PIN LEADLESS STACK

48 - PIN STRAIGHT LEADED STACK

48 - PIN ‘’J’’ LEADED STACK

48 - PIN GULLWING LEADED STACK

50 - PIN PGA

DENSE-STACK

PIN NAMES

A0 - A16 Address Inputs

I/O0 - I/O15 Data

Input/Output

CE0 - CE7Chip Enables *

WE Write Enable

OE Output Enable

Programming Voltage

VPP (+12.0V)

VDD Power (+5V)

VSS Ground

N.C. No Connect

*CE0, CE2, CE4 and CE6 control I/O0 - I/O7,

CE1, CE3, CE5 and CE7 control I/O8 - I/O15.

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DEVICE OPERATION:

The FLASH devices are electrically erasable and

programmable memories that function similarly to an EPROM

device, but can be erased without being removed from the

system and exposed to ultraviolet light. Each 128K x 8 device

can be erased individually eliminating the need to re-program

the entire module when partial code changes are required.

READ:

With VPP = 0V to VDD (VPPLO), the devices are read-only

memories and can be read like a standard EPROM. By

selecting the device to be read (see Truth Table and

Functional Block Diagram), the data programmed into the

device will appear on the appropriate I/O pins.

When VPP = +12.0V ± 0.6V (VPPHI), reads can be

accomplished in the same manner as described above but

must be preceded by writing 00H1 to the command register

prior to reading the device. When VPP is raised to VPPHI the

contents of the command register default to 00H1 and remain

that way until the command register is altered.

STANDBY:

When the appropriate CE‘s are raised to a logic-high level, the

standby operation disables the FLASH devices reducing the

power consumption substantially. The outputs are placed in

a high- impedance state, independent of the OE input. If the

module is deselected during programming or erase, the

device upon which the operation was being performed will

continue to draw active current until the operation is

completed.

PROGRAM:

The programming and erasing functions are accessed via the

command register when high voltage is applied to VPP. The

contents of the command register control the functions of the

memory device (see Command Definition Table).

The command register is not an addressable memory

location. The register stores the address, data, and command

information required to execute the command. When VPP =

VPPLO the command register is reset to 00H1 returning the

device to the read-only mode.

The command register is written by enabling the device upon

which that the operation is to be performed (see Functional

Block Diagram). While the device is enabled bring WE to a

logic-low (VIL). The address is latched on the falling edge of

WE and data is latched on the rising edge of WE.

Programming is initiated by writing 40H1 (program setup

command) to the command register. On the next falling edge

of WE the address to be programmed will be latched,

followed by the data being latched on the rising edge of WE

(see AC Operating and Characteristics Table).

PROGRAM VERIFY:

The FLASH devices are programmed one location at a time.

Each location may be programmed sequentially or at random.

Following each programming operation, the data written

must be verified.

To initiate the program-verify mode, C0H1 must be written to

the command register of the device just programmed. The

programming operation is terminated on the rising edge of

WE. The program-verify command is then written to the

command register.

After the program-verify command is written to the command

margin voltage to the location just written. After waiting 6µs

the data written can be verified by doing a read. If true data

is read from the device, the location write was successful and

the next location may be programmed.

If the device fails to verify, the program/verify operation is

repeated up to 25 times.

ERASE:

The erase function is a command-only operation and can only

be executed while VPP = VPPHI.

To setup the chip-erase, 20H1 must be written to the

command register. The chip-erase is then executed by once

again writing 20H1 to the command register (see AC

Operating and Characteristics Table).

To ensure a reliable erasure, all bits in the device to be erased

should be programmed to their charged state (data = 00H)

prior to starting the erase operation. With the algorithm

provided, this operation should typically take 2 seconds.

HIGH PERFORMANCE PARALLEL ERASURE:

Dense-Pac recommends that all users implement the

following Intel High Performance Parallel Erase algorithm

in order to avoid the possibility of over erasing these parts.

In applications containing more than one FLASH memory,

you can erase each device serially or you can reduce total

erase time by implementing a parallel erase algorithm. You

may save time by erasing all devices at the same time.

However, since FLASH memories may erase at different rates,

you must verify each device separately. This can be done in

a word-wise fashion with the Command Register Reset

Command and a special masking algorithm.

Take for example the case of two-device (parallel) erasure.

The CPU first writes the data word erase command 2020H

twice in succession. This starts erasure. After 10ms, the CPU

writes the data word verify command A0A0H to stop erasure

and setup erase verification. If both one or both bytes are not

erased at the given address, the CPU implements the erase

sequence again without incrementing the address.

Suppose at the given address only the low byte verifies FFH

data? Could the whole chip be erased? The answer is yes.

Rather than check the rest of the low byte addresses

independently of the high byte, simply use the reset

command to mask the low byte from erasure and erase

verification on the next erase loop. In this example the erase

command would be 20FFH and the verify command would

be A0FFH. Once the high byte verifies at the address, the

CPU modifies the command back to the default 2020H and

A0A0H, increments to the next address, and then writes the

verify command.

See Figure 4 for a conceptual view of the parallel erase flow

chart and Figure 4 for the detailed version. These flow charts

are for the 16-bit systems and can be expanded for 32-bit

designs.

ERASE VERIFY:

The erase operation erases all locations in the device selected

in parallel. Upon completion of the erase operation, each

location must be verified. This operation is initiated by writing

A0H1 to the command register. The address to be verified

must be supplied in order to be latched on the falling edge of

WE.

The memory device internally generates a margin voltage and

applies it to the addressed location. If FFH is read from the

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device, it indicates the location is erased. The erase/verify

command is issued prior to each location verification to latch

the address of the location to be verified. This continues until

FFH is not read from the device or the last address for the

device being erased is read.

If FFH is not read from the location being verified, an

additional erase operation is performed. Verification then

resumes from the last location verified. Once all locations in

the device being erased are verified, the erase operation is

complete. The verify operation should now be terminated by

writing a valid command such as program set-up to the

command register.

PRODUCT I.D. OPERATION:

The product I.D. operation outputs the manufacturer code

(89H) and the device code (B4H). This allows programming

equipment to match the device with the proper erase and

programming algorithms.

With CE and OE at a logic low level, raising A9 to VID (see

DC Operating Characteristics) will initiate the operation. The

manufacturer’s code can then be read from address location

0000H and the device code can be read from address

location 0001H.

The I.D. codes can also be accessed via the command

a read from address location 0000H outputs the

manufacturer’s code (89H). A read from address location

0001H outputs the device code (B4H). To terminate the

operation, it is necessary to write another valid command into

the register.

POWER UP/DOWN PROTECTION:

The FLASH devices are designed to protect against accidental

erasure or programming during power transitions. It makes

no difference as to which power supply, VPP or VDD, powers

up first. Power supply sequencing is not required. Internal

circuitry ensures that the command register is reset to the read

mode upon power up.

POWER SUPPLY DECOUPLING:

VPP traces should use trace widths and layout considerations

comparable to that of the VDD power bus. The VPP supply

traces should also be decoupled to help decrease voltage

spikes.

While the memory module has high-frequency,

low-inductance decoupling capacitors mounted on the

substrate connected to VDD and VSS, it is recommended that

a 4.7µF to 10µF electrolytic capacitor be placed near the

memory module connected across VDD and VSS for bulk

storage. Decoupling capacitors should also be placed near

the module, connected across VPP and VSS.

COMMAND DEFINITION TABLE

Command

Bus

Cycles

Req’d

First Bus Cycle Second Bus Cycle

Operation Address Data 1Operation Address Data 1

Read Memory 1Write X00H - - -

Setup Erase / Erase 2Write X20H Write X20H

Erase Verify 2Write EA A0H Read XEVD

Setup Program / Program 2Write X40H Write PA PD

Program Verify 2Write XC0H Read XPVD

Reset 2Write XFFH Write XFFH

Read Product I.D. Codes 3Write X90H Read IA ID

EA =Address to Verify PA =Address to Program

EVD =Data Read from Location EA PD =Data to be Programmed at Location PA

IA =Address: 0000H for manufacturing code, 0001H for device code PVA =Data to be Read from Location PA at Program Verify

ID =ID data read from IA during product ID operation

(Manufacturer = 89H, Device = B4H)

TRUTH TABLE

Mode Description CEnWE OE A0 A9 VPP I/O Pins Supply Current

READ

ONLY

Not Selected HXXXXVPPLO HIGH-Z Standby

Output Disable LH H X X VPPLO HIGH-Z Active

Read LHLA0 A9 VPPLO DOUT Active

I.D. (Mfr.) LHLLVID VPPLO DOUT =89H Active

I.D. (Device) LHLHVID VPPLO DOUT = B4H Active

COMMAND

PROGRAM

Not Selected HXXXXVPPHI HIGH-Z Standby

Output Disable LH H X X VPPHI HIGH-Z Active

Read LHLA0 A9 VPPHI DOUT Active

Write L L HA0 A9 VPPHI DIN Active

L = LOW, H = HIGH, X = Don’t Care

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DC OPERATING CHARACTERISTICS: Over operating ranges

Symbol Characteristics Test Conditions Limits Unit

Min. Max.

IIN Input Leakage Current VIN = 0V to VDD -8 +8 µA

IOUT Output Leakage Current VI/O = 0V to VDD,

CE or OE = VIH, or WE = VIL -40 +40 µA

ICC1 Operating Supply Current CE = VIL, VIN = VIL or VIH,

IOUT = 0mA, f = 8MHz 70 mA

ICC2 VDD Programming Current Programming in Progress 70 mA

ICC3 VDD Erase Current Erasure in Progress 70 mA

ISB1 Standby Current (TTL) CE = VIH 8mA

ISB2 Full Standby Supply Current (CMOS) CE = VDD -0.2V 0.8 mA

IPPS VPP Leakage Current VPP = VPPLO 80 µA

IPP1 VPP Read Current VPP = VPPHI 1.6 mA

IPP2 VPP Programming Current VPP = VPPHI, Programming in Progress 65 mA

IPP3 VPP Erase Current VPP = VPPHI, Erasure in Progress 65 mA

IID A9 I.D. Current A9 = VID, CE = OE = VIL, WE = VIH 1.0 mA

RECOMMENDED OPERATING RANGE2

Symbol Characteristic Min. Typ. Max. Unit

VDD Supply Voltage 4.5 5.0 5.5 V

VPP Programming Voltage 11.4 12.0 12.6 V

VIL Input LOW Voltage -0.530.8 V

VIH Input HIGH Voltage 2.0 VDD+0.5 V

TAOperating

Temperature

C0+25 +70

°C

I-40 +25 +85

M/B -55 +25 +125

VID A9 I.D. Input/Output 11.5 13.0 V

CAPACITANCE 7: TA = 25°C, F = 1.0MHz

Symbol Parameter Max. Unit Condition

CADR Address Input 50

pF VIN3 = 0V

CCE Chip Enable 15

CWE Write Enable 50

COE Output Enable 50

CI/O Data Input/Output 50

ABSOLUTE MAXIMUM RATINGS 7

Symbol Parameter Value Unit

TSTC Storage Temperature -65 to +150 °C

TBIAS Temperature Under Bias -55 to +125 °C

VID Voltage on A9 2-0.5 to +14.0 4, 5 V

IOUT Output Short

Circuit Current 100 6 mA

VI/O Input/Output Voltage 2 -0.5 to +7.0 3V

VPP VPP Supply Voltage 2

During Erase/Program -0.5 to +14.0 4V

VDD Supply Voltage 2 -0.6 to +7.0 4 V

DC OUTPUT CHARACTERISTICS

Symbol Parameter Condition Min. Max. Unit

VOH HIGH Voltage IOH= -2.5mA 2.4 V

VOL LOW Voltage IOL=5.8mA 0.45 V

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AC TEST CONDITIONS

Input Pulse Levels 0V to 3.0V

Input Pulse Rise and Fall Times 5ns

Input and Output

Timing Reference Levels 1.5V

Output Timing Reference

Levels During Verify 0.8V and +2.4V

OUTPUT LOAD

Load CLParameters Measured

1100 pF except tDF, tLZ and tOLZ

230pF tDF, tLZ and tOLZ

AC OPERATING CONDITIONS AND CHARACTERISTICS - READ CYCLE: Over operating ranges

No. Symbol Parameter 120ns 150ns 170ns 200ns 250ns Unit

Min. Max. Min. Max. Min. Max. Min. Max. Min. Max.

1tRC Read Cycle Time 120 150 170 200 250 ns

2tCE Chip Enable Access Time 120 150 170 200 250 ns

3tACC Address Access Time 120 150 170 200 250 ns

4tOE Output Enable Access Time 50 55 60 60 65 ns

5tLZ Chip Enable to Output in LOW-Z 7, 8 0 0 0 0 0 ns

6tOLZ Output Enable to Output in LOW-Z 7, 8 0 0 0 0 0 ns

7tDF Output Disable to Output in HIGH-Z 7, 8 30 35 40 45 60 ns

8tOH Output Hold from Address, CE or OE Change

(whichever occurs first) 0 0 0 0 0 ns

AC OPERATING CONDITIONS AND CHARACTERISTICS - WRITE CYCLE: Over operating ranges

No. Symbol Parameter 120ns 150ns 170ns 200ns 250ns Unit

Min. Max. Min. Max. Min. Max. Min. Max. Min. Max.

9tWC Write Cycle Time 120 150 170 200 250 ns

10 tAS Address Setup Time 0 0 0 0 0 ns

11 tAH Address Hold Time 60 60 60 60 60 ns

12 tDS Data Setup Time 50 50 50 50 50 ns

13 tDH Data Hold Time 10 10 10 10 10 ns

14 tWR Write Recovery Time before Read 6 6 6 6 6 µs

15 tRR Read Recover Time before Write 0 0 0 0 0 ns

16 tCS Chip Enable Setup Time before Write 20 20 20 20 20 ns

17 tCH Chip Enable Hold Time 0 0 0 0 0 ns

18 tWP Write Pulse Width 980 80 80 80 80 ns

19 tWPH Write Pulse Width HIGH 920 20 20 20 20 ns

20 tDP Duration of Programming Operation 10 10 10 10 10 µs

21 tDE Duration of Erase Operation 9.5 10.5 9.5 10.5 9.5 10.5 9.5 10.5 9.5 10.5 ms

22 tVPEL VPP Setup Time to Chip Enable LOW 41.0 1.0 1.0 1.0 1.0 µs

1.3V

3.3KΩ

1N914

CL*

DOUT

Figure 1. Output Load

* Including Probe and Jig Capacitance.

DEVICE

UNDER

TEST

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READ CYCLE

ADDRESS

DATA OUT

5.0V

VDD

ERASE CYCLE

ADDRESS

DATA I/O

5.0V

VDD

VPPH

VPP

VPPL

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PROGRAMMING CYCLE 9

ADDRESS

DATA I/O

5.0V

VDD

VPPH

VPP

VPPL

Alternative

Write Timing

NOTES:

1. Each SLCC contains two FLASH memory devices enabled by

separate chip enables. Typically this module would be used as a

x16 device with CE0 and CE1 tied together. When writing

commands to the Command Register under these conditions, the

command shown in the Command Definition Table should be

duplicated to each byte (I/O0 - I/O7, I/O8 - I/O15) of the module.

If the command to be written is 40H like that for Setup

Program/Program, 4040H would be written to the module followed

by the 16 bit data. A single device can be programmed or erased

by writing the appropriate command to the device the operation is

to be performed on while 00H is written to the other devices that

are enabled at the same time.

Care must be taken when doing Program Verify on a single device.

Make certain that no other devices are driving the data bus of the

devices that are not being verified but are enabled along with the

device that is being verified. Any device that is enabled during

Program Verify will be driving the data bus with the data that is

programmed at that address.

2. All voltages are with respect to VSS.

3. -2.0V min. for pulse width less than 20ns (VIL min. = -0.5V at DC

level).

4. Maximum DC voltage on VPP or A9 may over shoot to +14.0V for

periods less than 20ns.

5. Output shorted for no more than 1 second. No more than one

output shorted at a time.

6. Stresses greater than those under ABSOLUTE MAXIMUM

RATINGS may cause permanent damage to the device. This is a

stress rating only and functional operation of the device at these or

any other conditions above those indicated in the operational

sections of this specification is not implied. Exposure to absolute

maximum rating conditions for extended periods may affect

reliability.

7. This parameter is guaranteed and not 100% tested.

8. Transition is measured at the point of ±500mV from steady state

voltage.

9. Chip Enable Controlled Writes: Write operations are driven by

the valid combination of Chip Enable and Write Enable. In systems

where Chip Enable defines the write pulse width (within a longer

Write Enable timing waveform) all Set-up, Hold, and inactive Write

Enable times should be measured relative to the Chip Enable

waveform.

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FIGURE 2: WRITE ALGORITHM

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FIGURE 3: ERASE ALGORITHM

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FIGURE 4: HIGH PERFORMANCE PARALLEL ERASURE (Conceptual Device)

NOTE:

[1] You mask the device by

substituting a reset

command for the erase

and verify commands,

that way the erased byte

idles through the next

erase loop.

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FIGURE 5: PARALLEL ERASE FLOW CHART

NOTES:

[1] Wait for VPP to stabilize.

[2] Use Quick-Pulse Programming algorithm.

[3] Initialize Variables:

PLSCNT_HI = High Byte Pulse Counter

PLSCNT_LO = Low Byte Pulse Counter

FLAG = Erase Error Flag

ADRS = Address

E_COM = Erase Command

V_COM = Verify Command

[4] Erase Verify Command stops erasure.

[5] See Figure 6 for subroutine.

[6] When both devices at ADRS are erased,

F_DATA = FFFFH.

[7] Reset commands to default E_COM =

2020H, V_COM = A0A0H before verifying

next ADRS.

[8] Reset device for read operation.

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FIGURE 6: DEVICE ERASE VERIFY AND MASK SUBROUTINE

NOTES:

[1] This subroutine masks the High

byte or Low Byte of the Erase and

Verify commands from executing

during the next operation.

[2] Mask the High byte with 00H.

[3] If the Low byte verifies erasure,

then mask the next erase and verify

commands with FFH (reset).

[4] If the Low byte does not verify,

increment its pulse counter.

[5] Check for max. count. FLAG = 1

denotes a Low byte error.

[6] Repeat sequence for High byte.

[7] FLAG = 2 denotes a High byte

error. FLAG = 3 denotes both High

byte and Low byte errors.

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(48 - PIN LEADLESS STACK) MECHANICAL DRAWING

(48 - PIN STRAIGHT LEADED STACK) MECHANICAL DRAWING

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(48 - PIN ‘’J’’ LEADED STACK) MECHANICAL DRAWING

(48 - PIN GULLWING LEADED STACK) MECHANICAL DRAWING

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ORDERING INFORMATION

(50 - PIN PGA) MECHANICAL DRAWING

Dense-Pac Microsystems, Inc.

7321 Lincoln Way u Garden Grove, California 92841-1428

(714) 898-0007 u (800) 642-4477 (Outside CA) u FAX: (714) 897-1772 u http://www.dense-pac.com

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