PNP POWER TRANSISTORS 92GU55,56 2N6728,29 . -60-(-80) VOLTS COMPLEMENTARY TO THE AMES, TR WATTS 2N6716, 17/92GU05, 06 SERIES Applications: PNP , COLLECTOR e High VCE ratings: 92GU55 = 60V min. VCEO eure ease 92GU56 = 80V min. VCEO couse EMITTER @ Exceptional power-to-price ratio CASE STYLE TO-237 DIMENSIONS ARE IN INCHES AND (MILLIMETERS) .215(5.46 efaneor "| C sseen -105(2.67) .260(7.11) uo 9512.41) 2606-60) 9 1015.33) .170(4.32) .050(1.27) SEATING aon 35) PLANE 0191.48) orf 018(.46) or.41) J -$00 fo ion 016(.41) 016(.41) 014(.36) ON cs [ 022156) 4 consn ] O16(.44) O16(.41) 014.36) (5.21 44) Lan 216(.41) ~ an oe * i ar 2465(4.23) = r vee 18) ana a a | TYPE TERM.1 J TERM.2 TERM.3 TAB 3O-237 | EMITTER | BASE | COLLECTOR } COLLECTOR maximum ratings (T, = 25C) (unless otherwise specified) RATING SYMBOL 92GU55/2N6728 92GU56/2N6729 UNITS Collector-Emitter Voltage VcEO -60 -80 Volts Collector-Base Voltage Vcs -60 -80 Volts Emitter Base Voltage Ves ~4.0 -4.0 Volts Collector Current Continuous lo -2.0 -2.0 A Total Power Dissipation @ Ta = 25C Ppp 1.2 1.2 Watts Operating and Storage Junction Temperature Range Ty, Tste -55 to +150 -55 to +150 C thermal characteristics Thermal Resistance, Junction to Ambient Rava 167 167 C/W Thermal Resistance, Junction to Case Rgic 50 50 C/W *Ppp= Practical Power Dissipation, i.e., that power which can be dissipated with the device installed in a typical manner on a printed circuit board with total copper run area equal to 1.0in.2 minimum. 837electrical characteristics (Ta = 25C) (unless otherwise specified) | CHARACTERISTIC | SYMBOL | MIN | TYP | MAX | UNIT off characteristics Collector-Emitter Sustaining Voltage 92GU55,2N6728 | VCEO(sus) -60 _ _ Volts (Ig = -1.0mA, Ig = 0A) 92GU56,2N6729 -80 _ Collector Cut-off Current (Vog = -40V, le = 0)92GU55,2N6728 loBo _ _ -.1 uA (Vop = -50V, le =0) 92GU56,2N6729 _ -1 Emitter Cutoff Current (Vee = -4V, Io = 0) lEBO - -100 uA on characteristics DC Current Gain hee (Io = -50MA, Voce = -1V) -80 _ _ (Ig = -250mA, Voce = -1V) . -50 _ _ (Ic = -500mA, Vog = -1V) -20 _ _ Base-Emitter On Voltage (Io = -250mMA, Voce = -1V) VBE(on) _ _ 1.2 Vv Base-Emitter Saturation Voltage VBE(sat) (Ic = -250mA, Ip = -10mA) _ _ -.5 Volts (Ig = -250mA, Ip = -25mA) _ ~.35 dynamic characteristics Collector Capacitance _ _ (Vop = -10V, le = 0, f= 1MHz) Ceo 30 pF Current-Gain Bandwidth Product (Ig = -200mA, Vog = -5V, f = 100MHz) fr 50 -~ fo 7 MHz 838