TIP30C — PNP Epit axial Silicon Transistor
© 2000 Fairchild Semiconductor Corporation www.fairchildsemi.com
TIP30C Rev. 1.1.0
November 2014
TIP30C
PNP Epitaxial Silicon Transistor
Features
• Medium Power Linear Switching Applications
• Complementary to TIP29 Series
Ordering Information
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the re co mmen ded operating conditions an d s tres si ng the parts to these lev el s i s n ot re co mme nde d. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TC = 25°C unless otherwise noted.
Part Number Top Mark Package Packing Method
TIP30C TIP30C TO-220 3L (Single Gauge) Bulk
TIP30CTU TIP30C TO-220 3L (Single Gauge) Rail
Symbol Parameter Value Unit
VCBO Collector-Base Voltage -100 V
VCEO Collector-Emitter Voltage -100 V
VEBO Emitter-Base Voltage -5 V
ICCollector Current (DC) -1 A
ICP Collector Current (Pulse) -3 A
IBBase Current -0.4 A
TJJunction Temperature 150 °C
TSTG Storage Temperature Range -65 to 150 °C
1.Base 2.Collector 3.Emitter
1TO-220
TIP30C — PNP Epit axial Silicon Transistor
© 2000 Fairchild Semiconductor Corporation www.fairchildsemi.com
TIP30C Rev. 1.1.0 2
Thermal Characteristics
Values are at TC = 25°C unless otherwise noted.
Electrical Characteristics
Va lues are at TC = 25°C unless otherwise noted.
Note:
1. Pulse test: pw ≤ 300 μs, duty cycle ≤ 2%.
Symbol Parameter Value Unit
PC Collector Dissipation (TA = 25°C) 2 W
Collector Dissipation (TC = 25°C) 30
Symbol Parameter Conditions Min. Max. Unit
VCEO(sus) Collector-Emitter Sustaining Voltage(1) IC = -30 mA, IB = 0 -100 V
ICEO Collector Cut-Off Current VCE = -60 V, IB = 0-0.3mA
ICES Collector Cut-Off Current VCE = -100 V, VEB = 0 -200 μA
IEBO Emitter Cut-Off Current VEB = -5 V, IC = 0 -1.0 mA
hFE DC Current Gain(1) VCE = -4 V, IC = -0.2 A 40
VCE = -4 V, IC = -1 A 15 75
VCE(sat) Collector-Emitter Saturation Voltage(1) IC = -1 A, IB = -125 mA -0.7 V
VBE(on) Base-Emitter On Voltage(1) VCE = -4 V, IC = -1 A -1.3 V
fT Current Gain Bandwidth Product VCE = -10 V, IC = -200 mA,
f = 1 MHz 3.0 MHz
TIP30C — PNP Epit axial Silicon Transistor
© 2000 Fairchild Semiconductor Corporation www.fairchildsemi.com
TIP30C Rev. 1.1.0 3
Typical Performance Characteristics
Figure 1. DC Current Gain Figure 2. Base-Emitter Saturation Voltage and
Collector-Emitter Saturation Voltage
Figure 3. Safe Operating Area Figure 4. Power Derating
-1 -10 -100 -1000 -10000
1
10
100
1000 VCE = -4V
hFE, DC CURRENT GAIN
IC[mA], COLLECTOR CURRENT
-1 -10 -100 -1000 -10000
-10
-100
-1000
-10000 IC/IB = 10
VCE(sat)
VBE(sat)
VBE(sat), VCE(sat)[mV], SATURATION VOLTAGE
IC[mA], COLLECTOR CURRENT
-10 -100
-0.1
-1
-10
DC
TIP30C VCEO MAX.
TIP30B VCEO MAX.
TIP30A VCEO MAX.
TIP30 VCEO MAX.
IC(MAX) (DC)
IC(MAX) (PULSE)
5ms
1ms
IC[A], COLLECTOR CURRENT
VCE[V], COLLECTOR-EMITTER VOLTAGE
0 25 50 75 100 125 150 175 200
0
5
10
15
20
25
30
35
40
PC[W], POWER DISSIPATION
TC[oC], CASE TEMPERATURE
TIP30C — PNP Epit axial Silicon Transistor
© 2000 Fairchild Semiconductor Corporation www.fairchildsemi.com
TIP30C Rev. 1.1.0 4
Physical Dimensions
Figure 5. TO-220, MOLDED, 3LEAD, JEDEC VARIATION AB
© Fairchild Semiconductor Corporation www.fairchildsemi.com
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Rev. I72
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