© Semiconductor Components Industries, LLC, 2011
November, 2011 Rev. 4
1Publication Order Number:
BUV26/D
BUV26
Switchmode Series NPN
Silicon Power Transistor
Designed for highspeed applications.
Features
Switchmode Power Supplies
High Frequency Converters
Relay Drivers
Driver
PbFree Package is Available*
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating Symbol Value Unit
CollectorEmitter Voltage VCEO(sus) 90 Vdc
CollectorBase Voltage VCBO 180 Vdc
EmitterBase Voltage VEBO 7.0 Vdc
Collector Current Continuous
Collector Current Peak (pw 10 ms)
IC
ICM
20
30
Adc
Apk
Base Current Continuous IB
IBM
4.0
6.0
Adc
Adc
Total Power Dissipation @ TC = 25°C
Total Power Dissipation @ TC = 60°C
PD
PD
85
65
W
W
Operating and Storage Junction
Temperature Range
TJ, Tstg    65 to +175 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance,
JunctiontoCase
RqJC 1.76 °C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
*For additional information on our PbFree strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Device Package Shipping
ORDERING INFORMATION
BUV26 TO220 50 Units / Rail
12 AMPERES
NPN SILICON
POWER TRANSISTORS
90 VOLTS, 85 WATTS
MARKING
DIAGRAM
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BUV26G TO220
(PbFree)
50 Units / Rail
BUV26 = Device Code
A = Assembly Location
Y = Year
WW = Work Week
G = PbFree Package
BUV26G
AYWW
TO220AB
CASE 221A
STYLE 1
123
4
BUV26
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2
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
CollectorEmitter Sustaining Voltage
(IC = 200 mA, IB = 0, L = 25 mH)
VCEO(sus)
90
Vdc
Collector Cutoff Current at Reverse Bias
(VCE = 180 V, VBE = 1.5 V, TC = 125°C)
ICEX
1.0
mAdc
Emitter Base Reverse Voltage
(IE = 50 mA)
VEBO
7.0 30
V
Emitter Cutoff Current
(VEB = 5.0 V)
IEBO
1.0
mAdc
Collector Cutoff Current
(VCE = 180 V, RBE = 50 W, TC = 125°C)
ICER
3.0
mAdc
ON CHARACTERISTICS
CollectorEmitter Saturation Voltage
(IC = 6.0 A, IB = 0.4 A)
(IC = 12 A, IB = 1.2 A)
VCE(sat)
0.6
1.5
Vdc
BaseEmitter Saturation Voltage
(IC = 12 A, IB = 1.2 A)
VBE(sat)
2.0
Vdc
SWITCHING CHARACTERISTICS (Resistive Load)
Turn On Time IC = 12 A, IB = 1.2 A ton 0.6 ms
Storage Time VCC = 50 V, VBE = 6.0 V ts1.0
Fall Time RB2 = 2.5 Wtf0.15
SWITCHING CHARACTERISTICS (Inductive Load)
Storage Time VCC = 50 V, IC = 12 A
IB(end) = 1.2 A, VB = 5.0 V
LB = 0.5 pH, TJ = 125°C
Ts2.0 ms
Fall Time Tf.15
1. Pulse Test: Pulse width p 300 ms; Duty cycle p 2%.
BUV26
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3
TYPICAL CHARACTERISTICS
Figure 1. DC Current Gain Figure 2. CollectorEmitter Saturation Voltage
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (A)
1001010.1
0
20
40
80
100
140
160
180
1001010.1
0
0.1
0.2
0.3
0.4
0.5
0.6
Figure 3. BaseEmitter Saturation Voltage Figure 4. Safe Operating Area
IC, COLLECTOR CURRENT (A) VCE, COLLECTOR EMITTER VOLTAGE (V)
1001010.1
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
100101
0.01
0.1
1
10
100
hFE, DC CURRENT GAIN
VCE(sat), COLLEMIT SATURATION
VOLTAGE (V)
VBE(sat), BASEEMIT SATURATION
VOLTAGE (V)
IC, COLLECTOR CURRENT (A)
60
120
150°C
55°C
25°C
175°C
VCE = 5 V 150°C
55°C
25°C
175°C
IC/IB = 10
150°C
55°C
25°C
175°C
IC/IB = 10
100 mSec
BUV26
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4
PACKAGE DIMENSIONS
TO220
CASE 221A09
ISSUE AG
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.570 0.620 14.48 15.75
B0.380 0.405 9.66 10.28
C0.160 0.190 4.07 4.82
D0.025 0.036 0.64 0.91
F0.142 0.161 3.61 4.09
G0.095 0.105 2.42 2.66
H0.110 0.161 2.80 4.10
J0.014 0.025 0.36 0.64
K0.500 0.562 12.70 14.27
L0.045 0.060 1.15 1.52
N0.190 0.210 4.83 5.33
Q0.100 0.120 2.54 3.04
R0.080 0.110 2.04 2.79
S0.045 0.055 1.15 1.39
T0.235 0.255 5.97 6.47
U0.000 0.050 0.00 1.27
V0.045 --- 1.15 ---
Z--- 0.080 --- 2.04
B
Q
H
Z
L
V
G
N
A
K
F
123
4
D
SEATING
PLANE
T
C
S
T
U
R
J
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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BUV26/D
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