S G S-THOMSON -74c D 2929237 ooo4azy oO Tr ei- 07 THORISON SEMICONDUCTORS FO 8-87. germanium signal diodes Types Ve lo Ip IR / Ver Case @Ve= 1V max max min max (Vv) {mA} (mA) (A) (Vv) gold bond Tamb = 25C IN 270 * 100 90 200 : 100 50 DO7 glass (CB-26) silicon signal diodes Types Vr-VRM lo Ve / ste Ip / Vp Ip / VR Cc te / If Case (1) Tamb 150C max max | max max max max | max (v) (mA}] (V) (mA) | (nA) (V) (nA) (V} | (pF) | (ns) (mA) high speed switching ; - Tamb = 25C ove IN 4148 75-100 75 1 10 25 20 50 20 4 4 10 (IN 914) low leakage, high conductance DO 35 glass (CB-102) IN 3595 DHD 125-125 150 1 200 1 125 3 125 8 | 3000 10, 1N 3595 E DHD 125-150 150 1 200 (2) 1 125 3 125 8 | 3000 10 (1) Pulse test tp < 300 ps 8 < 2%, 2) Vp @ 1 mA = 0,56...0,72V; 0,52...0,68V. ( VE @ 5 mA = 0,63...0,78V instead of 9'20"'9. 75V. 2 Device under CCQ/CCT. Device under CCQ/CECC. o CNES qualified product. 68S G S-THOMSON vac o ff 2929237 goo4a7s 2 | 7-02-69 - THORISON SEMICONDUCTORS schottky small signal diodes Types VRRM If Ip(]}) / Ve | Vp(/ te C / Vp Dynamic parameters Case . fo* max max max ~ (V) (mA) (A} (Vv) | (Y) (mA) | (pF) (V) UHF and ultra fast switching Tamb = 25C BAR 19 4 30 0,25 3 0,6 10 1 1 = 6dB / 1GHz BAT 29 5 30 0,05 1 0,55 10 1 0 Q,<3pC /10mA BAT 19 10 30 0,1 5 0,4 1 1,2 0 T<100ps /20mA BAT 45 15 30 0,1 6 | 05 1 | a1 tie <ins / 3mA BAR 10 20 35 0,1 15 0,41 1 1,2 0 T<100ps /5mA BAR 71 15 20 0,1 8 0,41 1 1,2 0 T<100ps / 5mA IN 5712 20 35 0,15 16 0,55 j 1,2 0 t<100ps /5mA DO 35 ! BAR 28 70 15 02 50 | 0,41 1 2 0 T<100ps /5mA (CB.102) 1N 5711 70 5 0,2 50 0,41 1 2 0 T<1W0ps / 5mA IN 6263 | 60 15 0,2 50 0,41 1 2,2 0 T<100ps /5mA general purpose Tamb = 25C 0,4 10 BAT 42 30 100 0,5 25 0,65 50 7 #1 ter <5 ns NOmA 1 250 0,45 5 BAT 43 30 100 0,5 25 1 250 7 1 >80% 1/45 MHz 0,25 0,1 BAT 47 ~20 350 4 10 0,4 10 12 #1 typ <10ns /10mA 1 300 0,25 0,1 BAT 48 40 350 2 10 0,4 10 122 #1 frp <10ns = /10mA 0,9 500 po 35 BAT 41 0,45 1 / glass (IN 270) 100 100 01 50 { 1 200 | 2 8 } : (CB-102) 0,25 0,1 BAT 46 100 150 2 50 0,45 10 6 1 qu 250 0,32 10 Dy BAT 49 80 1000 200 80 0,42 100 120 O 1 1000 BYV 10-208 { 0,45 1000 (IN 5817) 20 1000* 300 20 0,75 3000 330 O 0,55 1000 BYV 10-20 . 20 1000* 500 20 {oes 3000 220 O BYV 10-30 * 0,55 1000 (IN 5818) 30 | 1000" | 500 30 l{o'es 3000 | 220 0 D9 41 BYV 10-40 . 0,55 1000 glass (IN 5819) 40 | 1000" | 500 40 {038 3000 | 220 9 (CB-101) : 0,70 1000 Di BYV 10-60 60 1000* 500 60 { 0.90 3000 150 - 0 F : Mixer noise figure. Q, : Stored charge (B-line). 1] : Detection efficiency. . T : Minority carrier life time (Krakauer method). (1) Pulse test tp <300ps 8 <2%. Typical value. N: New product. D: Product in development. 69