MEDIUM POWER THYRISTORS Stud Version
10RIA SERIES
1
10A
Bulletin I2405 rev. A 07/00
IT(AV) 10 A
@ TC85 °C
IT(RMS) 25 A
ITSM @
50Hz 225 A
@ 60Hz 240 A
I2t@
50Hz 255 A2s
@ 60Hz 233 A2s
VDRM/VRRM 100 to 1200 V
tqtypical 110 µs
TJ- 65 to 125 °C
Parameters 10RIA Unit
Major Ratings and Characteristics
Features
Improved glass passivation for high reliability
and exceptional stability at high temperature
High di/dt and dv/dt capabilities
Standard package
Low thermal resistance
Metric threads version available
Types up to 1200V VDRM/ VRRM
Typical Applications
Medium power switching
Phase control applications
Can be supplied to meet stringent military,
aerospace and other high-reliability requirements
Case Style
TO-208AA (TO-48)
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10RIA Series
Bulletin I2405 rev. A 07/00
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IT(AV) Max. average on-state current 10 A 180° conduction, half sine wave
@ Case temperature 85 °C
IT(RMS) Max. RMS on-state current 25 A
ITSM Max. peak, one-cycle 225 t = 10ms No voltage
non-repetitive surge current 240 t = 8.3ms reapplied
190 t = 10ms 100% VRRM
200 t = 8.3ms reapplied Sinusoidal half wave,
I2t Maximum I2t for fusing 255 t = 10ms No voltage Initial TJ = TJ max.
233 t = 8.3ms reapplied
180 t = 10ms 100% VRRM
165 t = 8.3ms reapplied
I2√t Maximum I2√t for fusing 2550 A2√s t = 0.1 to 10ms, no voltage reapplied
VT(TO)1 Low level value of threshold 1.10 (16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max.
voltage
VT(TO)2High level value of threshold 1.39 (I > π x IT(AV)), TJ = TJ max.
voltage
rt1 Low level value of on-state 24.3 (16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max.
slope resistance
rt2 High level value of on-state 16.7 (I > π x IT(AV)), TJ = TJ max.
slope resistance
VTM Max. on-state voltage 1.75 V Ipk= 32A, TJ = 25°C tp = 10ms sine pulse
IHMaximum holding current 130
ILTypical latching current 200
Parameter 10RIA Units Conditions
On-state Conduction
A2s
mΩ
V
A
mA TJ = 25°C, anode supply 12V resistive load
Voltage VDRM/VRRM, max. repetitive VRSM , maximum non- IDRM/IRRM max.
Type number Code peak and off-state voltage (1) repetitive peak voltage (2) @ TJ = TJ max.
VVmA
10 100 150 20
20 200 300
40 400 500
60 600 700
10RIA 80 800 900 10
100 1000 1100
120 1200 1300
ELECTRICAL SPECIFICATIONS
Voltage Ratings
(1) Units may be broken over non-repetitively in the off-state direction without damage, if dI/dt does not exceed 20A/µs
(2) For voltage pulses with tp ≤ 5ms
10RIA Series
Bulletin I2405 rev. A 07/00
3
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dv/dt Max. critical rate of rise of 100 TJ = TJ max. linear to 100% rated VDRM
off-state voltage 300 (*) TJ = TJ max. linear to 67% rated VDRM
V/µs
Parameter 10RIA Units Conditions
Blocking
PGM Maximum peak gate power 8.0 TJ = TJ max.
PG(AV) Maximum average gate power 2.0
IGM Max. peak positive gate current 1.5 A TJ = TJ max.
-VGM Maximum peak negative 10 V TJ = TJ max.
gate voltage
IGT DC gate current required 90 TJ = - 65°C
to trigger 60 mA TJ = 25°C
35 TJ = 125°C
VGT DC gate voltage required 3.0 TJ = - 65°C
to trigger 2.0 V TJ = 25°C
1.0 V TJ = 125°C
IGD DC gate current not to trigger 2.0 mA TJ = TJ max., VDRM = rated value
VGD DC gate voltage not to trigger 0.2 V TJ = TJ max.
VDRM = rated value
W
Max. required gate trigger current/
voltage are the lowest value which
will trigger all units 6V anode-to-
cathode applied
Max. gate current/ voltage not to
trigger is the max. value which
will not trigger any unit with rated
VDRM anode-to-cathode applied
Parameter 10RIA Units Conditions
Triggering
di/dt Max. rate of rise of turned-on TJ = TJ max., VDM = rated VDRM
current VDRM ≤ 600V 200 A/µs Gate pulse = 20V, 15Ω, tp = 6µs, tr = 0.1µs max.
VDRM ≤ 800V 180 ITM = (2x rated di/dt) A
VDRM ≤ 1000V 160
VDRM ≤ 1600V 150
tgt Typical turn-on time 0.9 TJ = 25°C,
at = rated VDRM/VRRM, TJ = 125°C
trr Typical reverse recovery time 4 µs TJ = TJ max.,
ITM = IT(AV), tp > 200µs, di/dt = -10A/µs
tqTypical turn-off time 110 TJ = TJ max., ITM = IT(AV), tp > 200µs, VR = 100V,
di/dt = -10A/µs, dv/dt = 20V/µs linear to
67% VDRM, gate bias 0V-100W
Parameter 10RIA Units Conditions
Switching
(**) Available with: dv/dt = 1000V/µs, to complete code add S90 i.e. 10RIA120S90.
(*) tq = 10µsup to 600V, tq = 30µs up to 1600V available on special request.
10RIA Series
Bulletin I2405 rev. A 07/00
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TJMax. operating temperature range - 65 to 125 °C
Tstg Max. storage temperature range - 65 to 125 °C
RthJC Max. thermal resistance, 1.85 K/W DC operation
junction to case
RthCS Max. thermal resistance, 0.35 K/W Mounting surface, smooth, flat and greased
case to heatsink
T Mounting torque to nut to device
20(27.5) 25 lbf-in Lubricated threads
0.23(0.32) 0.29 kgf.m (Non-lubricated threads)
2.3(3.1) 2.8 Nm
Case style TO-208AA (TO-48) See Outline Table
Parameter 10RIA Units Conditions
Thermal and Mechanical Specification
∆RthJC Conduction
(The following table shows the increment of thermal resistence RthJC when devices operate at different conduction angles than DC)
180° 0.44 0.32 K/W TJ = TJ max.
120° 0.53 0.56
90° 0.68 0.75
60° 1.01 1.05
30° 1.71 1.73
Conduction angle Sinusoidal conduction Rectangular conduction Units Conditions
Ordering Information Table
1
10 RIA 120 M S90
Device Code
4
3
2
1- Current code
2- Essential part number
3- Voltage code: Code x 10 = VRRM (See Voltage Rating Table)
4- None = Stud base TO-208AA (TO-48) 1/4" 28UNF-2A
M = Stud base TO-208AA (TO-48) M6 X 1
5- Critical dv/dt: None = 300V/µs (Standard value)
S90 = 1000V/µs (Special selection)
5
wt Approximate weight 14 (0.49) g (oz)
10RIA Series
Bulletin I2405 rev. A 07/00
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Outline Table
Fig. 1 - Current Ratings Characteristic Fig. 2 - Current Ratings Characteristic
Case Style TO-208AA (TO-48)
All dimensions in millimeters (inches)
40
50
60
70
80
90
100
110
120
130
0 2 4 6 8 1012141618
30° 60°
90°
120°
180°
Average On-state Current (A)
Maximum Allowable Case Temperature (°C)
Conduction Angle
10RIA Series
R (DC) = 1.85 K/W
thJC
40
50
60
70
80
90
100
110
120
130
0 5 10 15 20 25 30
DC
30°
60°
90°
120°
180°
Average On-state Current (A)
Maximum Allowable Case Temperature (°C)
Conduction Period
10RIA Series
R (DC) = 1.85 K/W
thJC
10RIA Series
Bulletin I2405 rev. A 07/00
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Fig. 3 - On-state Power Loss Characteristics
Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 6 - Maximum Non-Repetitive Surge Current
Fig. 4 - On-state Power Loss Characteristics
0255075100125
Maximum Allowable Ambient Temperature (°C)
10 K/W
7 K
/W
5 K
/W
4 K/W
3 K/W
2 K/W
R = 1 K/W
- Delta R
thS
A
0
5
10
15
20
25
30
35
0 2 4 6 8 10 12 14 16 18
RMS Limit
Conduction Angle
Maximum Average On-state Power Loss (W)
Average On-state Current (A)
180°
120°
90°
60°
30°
10RIA Series
T = 125°C
J
0255075100125
Maximum Allowable Ambient Temperature (°C)
10
K/W
7 K/W
5 K
/W
4 K/W
3 K/W
2 K/W
R
= 1 K/W
- D
elta R
th
SA
0
5
10
15
20
25
30
35
40
45
0 5 10 15 20 25 30
DC
180°
120°
90°
60°
30°
RMS Limit
Conduction Period
Maximum Average On-state Power Loss (W)
Average On-state Current (A)
10RIA Series
T = 125°C
J
90
100
110
120
130
140
150
160
170
180
190
200
1 10 100
Number Of Equal Amplitude Half Cycle Current Pulses (N)
At Any Rated Load Condition And With
Rated V Applied Following Surge.
Peak Half Sine Wave On-state Current (A)
10RIA Series
Initial T = 125°C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
RRM
J
80
100
120
140
160
180
200
220
240
0.01 0.1 1
Peak Half Sine Wave On-state Current (A)
Pulse Train Duration (s)
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration. Control
Of Conduction May Not Be Maintained.
Initial T = 125°C
No Voltage Reapplied
Rated V Reapplied
J
RRM
10RIA Series
10RIA Series
Bulletin I2405 rev. A 07/00
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Fig. 7 - Forward Voltage Drop Characteristics
Fig. 8 - Thermal Impedance ZthJC Characteristics
Fig. 9 - Gate Characteristics
0.1
1
10
0.001 0.01 0.1 1 10
Square Wave Pulse Duration (s)
thJC
Transient Thermal Impedance Z (K/W)
Steady State Value
R = 1.85 K/W
(DC Operation)
thJC
10RIA Series
0.1
1
10
100
0.001 0.01 0.1 1 10 100
VGD
IGD
(b)
(a)
(1) (2)
Instantaneous Gate Current (A)
Instantaneous Gate Voltage (V)
a) Recommended load line for
b) Recommended load line for
Rectangular gate pulse
tr<=1 µs, tp >= 6 µs
rated di/dt : 10V, 20ohms
<=30% rated di/dt : 10V, 65ohms
(1) PGM = 16W, tp = 4ms
(2) PGM = 30W, tp = 2ms
(3) PGM = 60W, tp = 1ms
(4) PGM = 60W, tp = 1ms
tr <=0.5 µs, tp >= 6 µs
(3) (4)
Tj = -65 °C
Tj = 25 °C
Tj = 125 °C
10RIA Series Frequency Limited by PG(AV)
1
10
100
1000
0.5 1 1.5 2 2.5 3 3.5 4
Instantaneous On-state Current (A)
Instantaneous On-state Voltage (V)
10RIA Series
T = 125 C
J
T = 25 C
J
10RIA Series
Bulletin I2405 rev. A 07/00
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http://www.irf.com Fax-On-Demand: +44 1883 733420 Data and specifications subject to change without notice.
