2 2016-06-22
IRFM9140
JANTX2N7236 / JANTXV2N7236 / JANS2N7236
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter Min. Typ. Max. Units Test Conditions
BVDSS Drain-to-Source Breakdown Voltage -100 ––– ––– V VGS = 0V, ID = -1.0mA
BVDSS/TJ Breakdown Voltage Temp. Coefficient ––– -0.087 ––– V/°C Reference to 25°C, ID = -1.0mA
Static Drain-to-Source On-State ––– ––– 0.20 VGS = -10V, ID = -11A
Resistance ––– –––
0.22 VGS = -10V, ID = -18A
VGS(th) Gate Threshold Voltage -2.0 ––– -4.0 V VDS = VGS, ID = -250µA
Gfs Forward Transconductance 6.2 ––– ––– S VDS = -15V, ID = -11A
IDSS Zero Gate Voltage Drain Current ––– ––– -25 µA VDS = -80V, VGS = 0V
––– ––– -250 VDS = -80V,VGS = 0V,TJ =125°C
IGSS Gate-to-Source Leakage Forward ––– ––– -100 nA VGS = -20V
Gate-to-Source Leakage Reverse ––– ––– 100 VGS = 20V
QG Total Gate Charge ––– ––– 60
nC
ID = -18A
QGS Gate-to-Source Charge ––– ––– 13 VDS = -50V
QGD Gate-to-Drain (‘Miller’) Charge ––– ––– 35.2 VGS = -10V
td(on) Turn-On Delay Time ––– ––– 35
ns
VDD = -50V
tr Rise Time ––– ––– 85 ID = -11A
td(off) Turn-Off Delay Time ––– ––– 85 RG = 9.1
tf Fall Time ––– ––– 65 VGS = -10V
Ls +LD Total Inductance ––– 6.8 ––– nH
Measured from Drain lead (6mm / 0.25 in
from package) to Source lead (6mm/ 0.25 in
from package) with Source wire internally
bonded from Source pin to Drain pad
Ciss Input Capacitance ––– 1400 –––
pF
VGS = 0V
Coss Output Capacitance ––– 600 ––– VDS = -25V
Crss Reverse Transfer Capacitance ––– 200 ––– ƒ = 1.0MHz
RDS(on)
Source-Drain Diode Ratings and Characteristics
Parameter Min. Typ. Max. Units Test Conditions
IS Continuous Source Current (Body Diode) ––– ––– -18
ISM Pulsed Source Current (Body Diode) ––– ––– -72
VSD Diode Forward Voltage ––– ––– -5.0 V TJ = 25°C,IS = -18A, VGS = 0V
trr Reverse Recovery Time ––– ––– 280 ns TJ = 25°C, IF = -18A, VDD ≤-50V
Qrr Reverse Recovery Charge ––– ––– 3.6 µC di/dt = 100A/µs
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
A
Footnotes:
Repetitive Rating; Pulse width limited by maximum junction temperature.
VDD = -25V, starting TJ = 25°C, L = 3.1mH, Peak IL = -18A, VGS = -10V
ISD -18A, di/dt -100A/µs, VDD -100V, TJ 150°C
Pulse width 300 µs; Duty Cycle 2%.
Thermal Resistance
Parameter Typ. Max. Units
RJC Junction-to-Case ––– 1.0
°C/W
RCS Case -to-Sink 0.21 –––
RJA Junction-to-Ambient (Typical socket mount) ––– 48
Min.
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