2N6036 - ON Semiconductor

December, 2013 − Rev. 15 1Publication Order Number:

2N6035/D

2N6034G, 2N6035G,

2N6036G (PNP),

2N6038G,2N6039G (NPN)

Plastic Darlington

Complementary Silicon

Power Transistors

Plastic Darlington complementary silicon power transistors are

designed for general purpose amplifier and low−speed switching

applications.

Features

•ESD Ratings: Machine Model, C; > 400 V

Human Body Model, 3B; > 8000 V

•Epoxy Meets UL 94 V−0 @ 0.125 in

•These Devices are Pb−Free and are RoHS Compliant*

MAXIMUM RATINGS

Rating Symbol Value Unit

Collector−Emitter Voltage

2N6034G

2N6035G, 2N6038G

2N6036G, 2N6039G

VCEO 40

Vdc

Collector−Base Voltage

2N6034G

2N6035G, 2N6038G

2N6036G, 2N6039G

VCBO 40

Vdc

Emitter−Base Voltage VEBO 5.0 Vdc

Collector Current − Continuous IC4.0 Adc

Collector Current − Peak ICM 8.0 Apk

Base Current IB100 mAdc

Total Device Dissipation

@ TC = 25°C

Derate above 25°C

PD40

320 W

mW/°C

Total Device Dissipation

@ TC = 25°C

Derate above 25°C

PD1.5

12 W

mW/°C

Operating and Storage Junction

Temperature Range TJ, Tstg –65 to +150 °C

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be af fected.

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance, Junction−to−Case RqJC 3.12 °C/W

Thermal Resistance, Junction−to−Ambient RqJA 83.3 °C/W

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

http://onsemi.com

4.0 AMPERES DARLINGTON

COMPLEMENTARY SILICON

POWER TRANSISTORS

40, 60, 80 VOLTS, 40 WATTS

Y = Year

WW = Work Week

2N603x = Device Code

x = 4, 5, 6, 8, 9

G = Pb−Free Package

MARKING DIAGRAM

See detailed ordering and shipping information in the package

dimensions section on page 5 of this data sheet.

ORDERING INFORMATION

TO−225

CASE 77−09

STYLE 1

123

YWW

N603xG

COLLECTOR 2, 4

BASE

EMITTER 1

COLLECTOR 2, 4

BASE

EMITTER 1

NPN PNP

2N6038 2N6034

2N6039 2N6035

2N6036

2N6034G, 2N6035G, 2N6036G (PNP), 2N6038G, 2N6039G (NPN)

http://onsemi.com

ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)

Characteristic Symbol Min Max Unit

OFF CHARACTERISTICS

Collector−Emitter Sustaining Voltage

(IC = 100 mAdc, IB = 0)

2N6034G

2N6035G, 2N6038G

2N6036G, 2N6039G

VCEO(sus)

−

Vdc

Collector−Cutoff Current

(VCE = 40 Vdc, IB = 0)

2N6034G

(VCE = 60 Vdc, IB = 0)

2N6035G, 2N6038G

(VCE = 80 Vdc, IB = 0)

2N6036G, 2N6039G

ICEO

−

100

Collector−Cutoff Current

(VCE = 40 Vdc, VBE(off) = 1.5 Vdc)

2N6034G

(VCE = 60 Vdc, VBE(off) = 1.5 Vdc)

2N6035G, 2N6038G

(VCE = 80 Vdc, VBE(off) = 1.5 Vdc)

2N6036G, 2N6039G

(VCE = 40 Vdc, VBE(off) = 1.5 Vdc, TC = 125_C)

2N6034G

(VCE = 60 Vdc, VBE(off) = 1.5 Vdc, TC = 125_C)

2N6035G, 2N6038G

(VCE = 80 Vdc, VBE(off) = 1.5 Vdc, TC = 125_C)

2N6036G, 2N6039G

ICEX

−

100

500

Collector−Cutoff Current

(VCB = 40 Vdc, IE = 0)

2N6034G

(VCB = 60 Vdc, IE = 0)

2N6035G, 2N6038G

(VCB = 80 Vdc, IE = 0)

2N6036G, 2N6039G

ICBO

−

0.5

mAdc

Emitter−Cutoff Current

(VBE = 5.0 Vdc, IC = 0) IEBO − 2.0 mAdc

ON CHARACTERISTICS

DC Current Gain

(IC = 0.5 Adc, VCE = 3.0 Vdc)

(IC = 2.0 Adc, VCE = 3.0 Vdc)

(IC = 4.0 Adc, VCE = 3.0 Vdc)

hFE 500

750

100

−

15,000

−

Collector−Emitter Saturation Voltage

(IC = 2.0 Adc, IB = 8.0 mAdc)

(IC = 4.0 Adc, IB = 40 mAdc)

VCE(sat) −

−2.0

3.0

Vdc

Base−Emitter Saturation Voltage

(IC = 4.0 Adc, IB = 40 mAdc) VBE(sat) − 4.0 Vdc

Base−Emitter On Voltage

(IC = 2.0 Adc, VCE = 3.0 Vdc) VBE(on) − 2.8 Vdc

DYNAMIC CHARACTERISTICS

Small−Signal Current−Gain

(IC = 0.75 Adc, VCE = 10 Vdc, f = 1.0 MHz) |hfe| 25 − −

Output Capacitance

(VCB = 10 Vdc, IE = 0, f = 0.1 MHz)

2N6034G, 2N6035G, 2N6036G

2N6038G, 2N6039G

Cob

−

−200

100

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

*Indicates JEDEC Registered Data.

2N6034G, 2N6035G, 2N6036G (PNP), 2N6038G, 2N6039G (NPN)

http://onsemi.com

Figure 1. Switching Times Test Circuit

4.0

0.04

Figure 2. Switching Times

IC, COLLECTOR CURRENT (AMP)

t, TIME (s)μ

2.0

1.0

0.6

0.2 0.06 0.1 0.2 0.4 0.6 1.0 2.0 4.0

0.4

0.8

PNP

NPN

td @ VBE(off) = 0

approx

+8.0 V

approx

-12 V

tr, tf ≤ 10 ns

DUTY CYCLE = 1.0%

25 ms

51 D1

+4.0 V

VCC

-30 V

TUT

≈ 8.0 k ≈ 60

SCOPE

for td and tr, D1 is disconnected

and V2 = 0, RB and RC are varied

to obtain desired test currents.

For NPN test circuit, reverse diode,

polarities and input pulses.

RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS

D1 MUST BE FAST RECOVERY TYPE, eg:

1N5825 USED ABOVE IB ≈ 100 mA

MSD6100 USED BELOW IB ≈ 100 mA

VCC = 30 V

IC/IB = 250

IB1 = IB2

TJ = 25°C

Figure 3. Thermal Response

t, TIME (ms)

1.0

0.01

0.5

0.2

0.1

0.05

0.02

r(t), TRANSIENT THERMAL RESISTANCE,

NORMALIZED

0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 100

500

qJC(t) = r(t) qJC

qJC = 3.12°C/W MAX

D CURVES APPLY FOR POWER

PULSE TRAIN SHOWN

READ TIME AT t1

TJ(pk) - TC = P(pk) qJC(t)

P(pk)

DUTY CYCLE, D = t1/t2

D = 0.5

0.2

0.05

0.02

0.01

SINGLE PULSE

0.1

0.7

0.3

0.07

0.03

0.02 0.03 0.3 3.0 30 300

2N6034G, 2N6035G, 2N6036G (PNP), 2N6038G, 2N6039G (NPN)

http://onsemi.com

ACTIVE−REGION SAFE−OPERATING AREA

1.0

5.0

Figure 4. 2N6035, 2N6036

VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

7.0

5.0

3.0

2.0

0.1 7.0 10 30 50 100

BONDING WIRE LIMITED

THERMALLY LIMITED

1.0

IC, COLLECTOR CURRENT (AMP)

TJ = 150°C

1.0ms 100 ms

Figure 5. 2N6038, 2N6039

0.7

0.5

0.2

2N6036

2N6035

0.3

1.0

5.0

VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

7.0

5.0

3.0

2.0

0.1 7.0 10 30 50 10070

1.0

IC, COLLECTOR CURRENT (AMP)

0.7

0.5

0.2

2N6039

2N6038

0.3

5.0ms

@ TC = 25°C (SINGLE PULSE)

SECOND BREAKDOWN LIMITED

100 ms

1.0ms

5.0ms

BONDING WIRE LIMITED

THERMALLY LIMITED

TJ = 150°C

@ TC = 25°C (SINGLE PULSE)

SECOND BREAKDOWN LIMITED

There are two limitations on the power handling ability of

a transistor: average junction temperature and second

breakdown. Safe operating area curves indicate IC − VCE

limits of the transistor that must be observed for reliable

operation; i.e., the transistor must not be subjected to greater

dissipation than the curves indicate.

The data of Figures 4 and 5 is based on T J(pk) = 150_C;

TC is variable depending on conditions. Second breakdown

pulse limits are valid for duty cycles to 10% provided TJ(pk)

< 150_C. TJ(pk) may be calculated from the data in Figure 3.

At high case temperatures, thermal limitations will reduce

the power that can be handled to values less than the

limitations imposed by second breakdown.

200

0.04

VR, REVERSE VOLTAGE (VOLTS)

10 0.4 0.6 1.0 2.0 404.00.06 0.1 0.2

C, CAPACITANCE (pF)

100

TC = 25°C

Cib

Cob

PNP

NPN

Figure 6. Capacitance

6.0 10 20

6.0 k

0.04

Figure 7. DC Current Gain

IC, COLLECTOR CURRENT (AMP)

300 0.06 0.1 0.2 0.6 1.0 4.0

600

800

400

hFE, DC CURRENT GAIN

1.0 k

2.0 k

VCE = 3.0 V

0.4 2.0

PNP

2N6034, 2N6035, 2N6036 NPN

2N6038, 2N6039

4.0 k

3.0 k

TC = 125°C

25°C

-55°C

6.0 k

0.04

IC, COLLECTOR CURRENT (AMP)

300 0.06 0.1 0.2 0.6 1.0 4.0

600

800

400

hFE, DC CURRENT GAIN

1.0 k

2.0 k

VCE = 3.0 V

0.4 2.0

4.0 k

3.0 k

TJ = 125°C

25°C

-55°C

2N6034G, 2N6035G, 2N6036G (PNP), 2N6038G, 2N6039G (NPN)

http://onsemi.com

VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

Figure 8. Collector Saturation Region

3.4

0.1

IB, BASE CURRENT (mA)

0.6 0.2 1.0 2.0 10 100

2.2

1.8

IC =

0.5 A

TJ = 25°C

1.0 A

2.6

3.0

0.5 5.0

2.2

0.04

IC, COLLECTOR CURRENT (AMP)

0.06 0.1 0.2 0.4 0.6 2.0 4.0

1.8

1.4

1.0

0.6

0.2

TJ = 25°C

VBE(sat) @ IC/IB = 250

VCE(sat) @ IC/IB = 250

V, VOLTAGE (VOLTS)

Figure 9. “On” Voltages

VBE @ VCE = 3.0 V

1.0

20 50

1.4

1.0

2.0 A 4.0 A

3.4

0.1

IB, BASE CURRENT (mA)

0.6 0.2 1.0 2.0 10 10

2.2

1.8

IC =

0.5 A

TJ = 25°C

1.0 A

2.6

3.0

0.5 5.0 20 50

1.4

1.0

2.0 A 4.0 A

IC, COLLECTOR CURRENT (AMP)

2.2

0.04 0.06 0.1 0.2 0.4 0.6 2.0 4.0

1.8

1.4

1.0

0.6

0.2

V, VOLTAGE (VOLTS)

1.0

TJ = 25°C

VBE(sat) @ IC/IB = 250

VCE(sat) @ IC/IB = 250

VBE @ VCE = 3.0 V

ORDERING INFORMATION

Device Package Shipping

2N6034G TO−225

(Pb−Free) 500 Units / Box

2N6035G TO−225

(Pb−Free) 500 Units / Box

2N6036G TO−225

(Pb−Free) 500 Units / Box

2N6038G TO−225

(Pb−Free) 500 Units / Box

2N6039G TO−225

(Pb−Free) 500 Units / Box

2N6034G, 2N6035G, 2N6036G (PNP), 2N6038G, 2N6039G (NPN)

http://onsemi.com

PACKAGE DIMENSIONS

TO−225

CASE 77−09

ISSUE AC

DIM MIN MAX

MILLIMETERS

D10.60 11.10

E7.40 7.80

A2.40 3.00

b0.60 0.90

P2.90 3.30

L1 1.27 2.54

c0.39 0.63

L14.50 16.63

b2 0.51 0.88

Q3.80 4.20

A1 1.00 1.50

e2.04 2.54

123

NOTES:

1. DIMENSIONING AND TOLERANCING PER

ASME Y14.5M, 1994.

2. CONTROLLING DIMENSION: MILLIMETERS.

3. NUMBER AND SHAPE OF LUGS OPTIONAL.

FRONT VIEW BACK VIEW

FRONT VIEW SIDE VIEW

123321

PIN 4

BACKSIDE TAB

STYLE 1:

PIN 1. EMITTER

2., 4. COLLECTOR

3. BASE

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2N6035/D

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