XU1000 - Mimix Broadband

Mimix Broadband’s 17.0-27.0 GHz GaAs MMIC up-

converter has a typical small signal gain of 0 dB with a

typical third order intercept of +12 dBm across the

band. The device is a single fundamental mixer followed

by a single stage amplifier. This MMIC uses Mimix

Broadband’s 0.15 m GaAs PHEMT device model

technology, and is based upon electron beam

lithography to ensure high repeatability and uniformity.

The chip has surface passivation to protect and provide

a rugged part with backside via holes and gold

metallization to allow either a conductive epoxy or

eutectic solder die attach process. This device is well

suited for Millimeter-wave Point-to-Point Radio, LMDS,

SATCOM and VSAT applications.

17.0-27.0 GHz GaAs MMIC

Up-Converter

U1000

June 2001 - Rev 6/06/01

Absolute Maximum Ratings

Frequency Range RF/LO (f) IF=DC-2.0 GHz

Input/Output Return Loss RF (S11,S22)

Input/Output Return Loss LO (S11,S22)

Small Signal Gain RF/IF (S21)

LO Input Drive (Pin)

Isolation LO/RF (S12)

Input Power for 1 dB Compression (P1dB)*

Input Third Order Intercept (IP3)*

Drain Bias Voltage (Vd)

Gate Bias Voltage (Vg)

Supply Current (Id) (Vd=3.0V, Vg=-0.3V Typical)

Page 1 of 4

Mimix Broadband, 520 W. NASA Road One, Webster, Texas 77598

Tel: 281.526.0536 Fax: 281.526.0541 mimixbroadband.com

Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers

accept their obligation to be compliant with U.S. Export Laws.

17.0-27.0 GHz Frequency Range

0 dB Typical Small Signal Gain

+12 dBm Typical Third Order Intercept

Low DC Power Consumption

Operates at +3.0 VDC

2.66 mm X 2.50 mm Die Size

100% On-Wafer RF, DC and Output Power Testing

100% Visual Inspection to MIL-STD-883

Method 2010

Features

General Description

Electrical Characteristics (Ambient Temperature T = 25 oC)

Parameter Units

GHz

dBm

VDC

Min.

17.0

-3.0

-1.0

Typ.

7.0

8.0

0.0

+12.0

10.0

+2.0

+12.0

+3.0

-0.3

Max.

27.0

+3.0

+5.5

+0.3

Supply Voltage (Vd)

Supply Current (Id)

Gate Bias Voltage (Vg)

Input Power (Pin)

Storage Temperature (Tstg)

Operating Temperature (Ta)

Channel Temperature (Tch)

Thermal Resistance (θjc)

+5.5 VDC

46 mA

+0.3 VDC

+10 dBm

-65 to +165 OC

-55 to +75 OC

125 OC

460 OC/W

Chip Device Layout

* Optional power bias Vd=5.5V, Id=45mA will typically yield improved P1dB.

17.0-27.0 GHz GaAs MMIC

Up-Converter

U1000

Page 2 of 4

Mimix Broadband, 520 W. NASA Road One, Webster, Texas 77598

Tel: 281.526.0536 Fax: 281.526.0541 mimixbroadband.com

Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers

accept their obligation to be compliant with U.S. Export Laws.

June 2001 - Rev 6/06/01

App Note [1] Biasing - As shown in the bonding diagram, this device has a single gain stage. Nominal

bias is Vd=3V, Id=23mA. Power bias may be as high as Vd=5.5V, Id=45mA. It is recommended to use

active biasing to keep the currents constant as the RF power and temperature vary, this gives the

most reproducible results. Depending on the supply voltage available and the power dissipation

constraints, the bias circuit may be a single transistor or a low power operational amplifier, with a low

value resistor in series with the drain supply used to sense the current. The gate of the pHEMT is

controlled to maintain correct drain current and thus drain voltage. The typical gate voltage needed to

do this is -0.5V. Typically the gate is protected with Silicon diodes to limit the applied voltage. Also

make sure to sequence the applied voltage to ensure negative gate bias is available before applying

the positive drain supply.

17.0-27.0 GHz GaAs MMIC

Up-Converter

U1000

Page 3 of 4

Mimix Broadband, 520 W. NASA Road One, Webster, Texas 77598

Tel: 281.526.0536 Fax: 281.526.0541 mimixbroadband.com

Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers

accept their obligation to be compliant with U.S. Export Laws.

Mechanical Drawing

U1000

2.500

(0.098)

1.960

(0.077)

0.0

0.0 0.390

(0.015)

2.660

(0.105)

1.157

(0.046)

2.212

(0.087)

1.612

(0.064)

U1000

1800pf

Vg Vd

RF Out

1800pf

Units: millimeters (inches) Bond pad dimensions are shown to center of bond pad.

Thickness: 0.100 (0.004) (for reference only), Backside is ground, Bond Pad/Backside Metallization: Gold

All Bond Pads are 0.100 x 0.100 (0.004 x 0.004).

Bond Pad #1 (LO)

Bond Pad #2 (IF)

Bond Pad #3 (Vg)

Bond Pad #4 (Vd)

Bond Pad #5 (RF Out)

June 2001 - Rev 6/06/01

Bias Arrangement

17.0-27.0 GHz GaAs MMIC

Up-Converter

U1000

June 2001 - Rev 6/06/01

Page 4 of 4

Mimix Broadband, 520 W. NASA Road One, Webster, Texas 77598

Tel: 281.526.0536 Fax: 281.526.0541 mimixbroadband.com

Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers

accept their obligation to be compliant with U.S. Export Laws.

Handling and Assembly Information

CAUTION! - Mimix Broadband MMIC Products contain gallium arsenide (GaAs) which can be

hazardous to the human body and the environment. For safety, observe the following procedures:

Do not ingest.

Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or

chemical processing as these by products are dangerous to the human body if inhaled, ingested,

or swallowed.

Observe government laws and company regulations when discarding this product. This product

must be discarded in accordance with methods specified by applicable hazardous waste

procedures.

ESD - Gallium Arsenide (GaAs) devices are susceptible to electrostatic and mechanical damage. Die

are supplied in antistatic containers, which should be opened in cleanroom conditions at an

appropriately grounded anti-static workstation. Devices need careful handling using correctly designed

collets, vacuum pickups or, with care, sharp tweezers.

Die Attachment - GaAs Products from Mimix Broadband are 0.100 mm (0.004") thick and have vias

through to the backside to enable grounding to the circuit. Microstrip substrates should be brought

as close to the die as possible. The mounting surface should be clean and flat. If using conductive

epoxy, recommended epoxies are Ablestick 84-1LMI or 84-1LMIT cured in a nitrogen atmosphere per

manufacturer's cure schedule. Apply epoxy sparingly to avoid getting any on to the top surface of the

die. An epoxy fillet should be visible around the total die periphery. If eutectic mounting is preferred,

then a fluxless gold-tin (AuSn) preform, approximately 0.001 thick, placed between the die and the

attachment surface should be used. A die bonder that utilizes a heated collet and provides scrubbing

action to ensure total wetting to prevent void formation in a nitrogen atmosphere is recommended.

The gold-tin eutectic (80% Au 20% Sn) has a melting point of approximately 280 C (Note: Gold

Germanium should be avoided). The work station temperature should be 310 C 10 C. Exposure to

these extreme temperatures should be kept to minimum. The collet should be heated, and the die

pre-heated to avoid excessive thermal shock. Avoidance of air bridges and force impact are critical

during placement.

Wire Bonding - Windows in the surface passivation above the bond pads are provided to allow wire

bonding to the die's gold bond pads. The recommended wire bonding procedure uses 0.076 mm x

0.013 mm (0.003" x 0.0005") 99.99% pure gold ribbon with 0.5-2% elongation to minimize RF port

bond inductance. Gold 0.025 mm (0.001") diameter wedge or ball bonds are acceptable for DC Bias

connections. Aluminum wire should be avoided. Thermo-compression bonding is recommended

though thermosonic bonding may be used providing the ultrasonic content of the bond is minimized.

Bond force, time and ultrasonics are all critical parameters. Bonds should be made from the bond

pads on the die to the package or substrate. All bonds should be as short as possible.