© 2004 IXYS All rights reserved
High Voltage IGBT VCES = 1200 V
IC25 = 50 A
VCE(sat) = 3.5 V
tfi(typ) = 160 ns
IXGH 28N120B
IXGT 28N120B
C (TAB)
G = Gate, C = Collector,
E = Emitter, TAB = Collector
GCE
TO-247 AD (IXGH)
Features
High Voltage IGBT for resonant
power supplies
- Induction heating
- Rice cookers
International standard packages
JEDEC TO-268 and
JEDEC TO-247 AD
Low switching losses, low V(sat)
MOS Gate turn-on
- drive simplicity
Advantages
High power density
Suitable for surface mounting
Easy to mount with 1 screw,
(isolated mounting screw hole)
DS98987E(04/04)
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
BVCES IC= 250 µA , VGE = 0 V 1200 V
VGE(th) IC= 250 µA, VCE = VGE 2.5 5 V
ICES VCE = VCES, VGE= 0 V TJ = 25°C25µA
IGES VCE = 0 V, VGE = ±20 V ±100 nA
VCE(sat) IC= 28A, VGE = 15 V 2.8 3.5 V
TJ = 125°C 2.75 V
Symbol Test Conditions Maximum Ratings
VCES TJ= 25°C to 150°C 1200 V
VCGR TJ= 25°C to 150°C; RGE = 1 MΩ1200 V
VGES Continuous ±20 V
VGEM Transient ±30 V
IC25 TC= 25°C50A
IC110 TC= 110°C28A
ICM TC= 25°C, 1 ms 150 A
SSOA VGE = 15 V, TVJ = 125°C, RG = 5 Ω ICM = 120 A
(RBSOA) Clamped inductive load @ 0.8 VCES
PCTC= 25°C 250 W
TJ-55 ... +150 °C
TJM 150 °C
Tstg -55 ... +150 °C
Maximum Lead temperature for soldering 300 °C
1.6 mm (0.062 in.) from case for 10 s
Maximum Tab temperature for soldering SMD devices for 10 s 260 °C
MdMounting torque (M3) (TO-247) 1.13/10Nm/lb.in.
Weight TO-247 AD 6 g
TO-268 4 g
TO-268 (IXGT)
G
EC (TAB)
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343 6,583,505
of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 6,683,344
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
gfs IC= 28A; VCE = 10 V, 15 23 S
Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %
Cies 1700 pF
Coes VCE = 25 V, VGE = 0 V, f = 1 MHz 120 pF
Cres 45 pF
Qg92 nC
Qge IC = 28A, VGE = 15 V, VCE = 0.5 VCES 13 nC
Qgc 35 nC
td(on) 30 ns
tri 20 ns
td(off) 210 280 ns
tfi 170 320 ns
Eoff 2.2 5.0 mJ
td(on) 35 ns
tri 28 ns
Eon 28N120B 0.3 mJ
28N120BD1 1.4 mJ
td(off) 250 ns
tfi 340 ns
Eoff 4.6 mJ
RthJC 0.5 K/W
RthCK (TO-247) 0.25 K/W
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.7 5.3 .185 .209
A12.2 2.54 .087 .102
A22.2 2.6 .059 .098
b 1.0 1.4 .040 .055
b11.65 2.13 .065 .084
b22.87 3.12 .113 .123
C .4 .8 .016 .031
D 20.80 21.46 .819 .845
E 15.75 16.26 .610 .640
e 5.20 5.72 0.205 0.225
L 19.81 20.32 .780 .800
L1 4.50 .177
∅P 3.55 3.65 .140 .144
Q 5.89 6.40 0.232 0.252
R 4.32 5.49 .170 .216
S 6.15 BSC 242 BSC
e
∅ P
TO-247 AD Outline
Inductive load, TJ = 125°°
°°
°C
IC = 28A, VGE = 15 V
VCE = 0.8 VCES, RG = Roff = 5 Ω
Inductive load, TJ = 25°°
°°
°C
IC = 28 A, VGE = 15 V
VCE = 0.8 VCES, RG = Roff = 5 Ω
Min Recommended Footprint
IXGH 28N120B
IXGT 28N120B
TO-268 Outline
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.9 5.1 .193 .201
A12.7 2.9 .106 .114
A2.02 .25 .001 .010
b 1.15 1.45 .045 .057
b21.9 2.1 .75 .83
C .4 .65 .016 .026
D 13.80 14.00 .543 .551
E 15.85 16.05 .624 .632
E113.3 13.6 .524 .535
e 5.45 BSC .215 BSC
H 18.70 19.10 .736 .752
L 2.40 2.70 .094 .106
L1 1.20 1.40 .047 .055
L2 1.00 1.15 .039 .045
L3 0.25 BSC .010 BSC
L4 3.80 4.10 .150 .161
© 2004 IXYS All rights reserved
IXGH 28N120B
IXGT 28N120B
Fig. 2. Extended Output Characteristics
@ 25
º
C
0
30
60
90
120
150
180
210
240
0 2 4 6 8 101214161820
V
C E
- Volts
I
C
- Amperes
V
GE
= 17V
7V
9V
11V
13V
15V
Fig. 3. Output Characteristics
@ 125
º
C
0
7
14
21
28
35
42
49
56
11.522.533.544.55
V
CE
- Volts
I
C
- Amperes
V
GE
= 15V
13V
11V
7V
5V
9V
Fig. 1. Output Characteristics
@ 25
º
C
0
7
14
21
28
35
42
49
56
11.522.533.544.55
V
C E
- Volts
I
C
- Amperes
V
GE
= 15V
13V
11V
5V
7V
9V
Fig. 4. Dependence of V
CE( sat )
on
Temperature
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
-50 -25 0 25 50 75 100 125 150
T
J
- Degrees Centigrade
V
C E (sat)
- Normalize
d
I
C
= 28A
I
C
= 14A
V
GE
= 15V
I
C
= 56A
Fig. 5. Collector-to-Em itter Voltage
vs. Gate-to-Emitter voltage
2
3
4
5
6
7
8
6 7 8 9 10 11 12 13 14 15 16 17
V
G E
- Volts
V
C E
- Volts
T
J
= 25
º
C
I
C
= 56A
28A
14A
Fig. 6. Input Adm ittance
0
10
20
30
40
50
60
70
80
90
100
45678910
V
G E
- Volts
I
C
- Amperes
T
J
= 125
º
C
25
º
C
-40
º
C
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343 6,583,505
of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 6,683,344
IXGH 28N120B
IXGT 28N120B
Fig. 7. Transconductance
0
5
10
15
20
25
30
35
0 102030405060708090100
I
C
- Amperes
g
f s
- Siemens
T
J
= -40
º
C
25
º
C
125
º
C
Fig. 8. Dependence of Turn-off
Energy Loss on R
G
0
2
4
6
8
10
12
14
16
18
0 102030405060708090100
R
G
- Ohms
E
o f f
- milliJoules
I
C
= 14
A
T
J
= 125
º
C
V
GE
= 15V
V
CE
= 960V
I
C
= 28A
I
C
= 56A
Fig. 9. Dependence of Turn-Off
Energy Loss on I
C
0
1
2
3
4
5
6
7
8
9
10
10 15 20 25 30 35 40 45 50 55 60
I
C
- Amperes
E
o f f
- MilliJoules
R
G
= 5Ω
V
GE
= 15V
V
CE
= 960V
T
J
= 125
º
C
T
J
= 25
º
C
Fig. 10. Dependence of Turn-off
Energy Loss on Temperature
0
1
2
3
4
5
6
7
8
9
10
11
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
E
o f f
- milliJoules
I
C
= 56A
R
G
= 5Ω
V
GE
= 15V
V
CE
= 960V
I
C
= 28A
I
C
= 14A
Fig. 11. Dependence of Turn-off
Sw itching Tim e on R
G
200
400
600
800
1000
1200
1400
0 102030405060708090100
R
G
- Ohms
Switching Time - nanoseconds
I
C
= 14A
t
d(off)
t
fi
- - - - - -
T
J
= 125ºC
V
GE
= 15V
V
CE
= 960V
I
C
= 28A I
C
= 56A
Fig. 12. Dependence of Turn-off
Sw itching Tim e
on I
C
100
150
200
250
300
350
400
450
10 15 20 25 30 35 40 45 50 55 60
I
C
- Amperes
Switching Time - nanoseconds
t
d(off)
t
fi
- - - - - -
R
G
= 5Ω
V
GE
= 15V
V
CE
= 960V
T
J
= 125
º
C
T
J
= 25
º
C
© 2004 IXYS All rights reserved
IXGH 28N120B
IXGT 28N120B
Fig. 17. Maxim um Transient Therm al Res is tance
0.10
1.00
1 10 100 1000
Pulse Width - milliseconds
R
( t h ) J C
-
ºC / W
0.50
Fig. 14. Gate Charge
0
2
4
6
8
10
12
14
16
0 1020 3040 5060 7080 90100
Q
G
- nanoCoulombs
V
G E
- Volts
VCE
= 600V
I C
= 28A
I G
= 10mA
Fig. 15. Capacitance
10
100
1000
10000
0 5 10 15 20 25 30 35 40
V
C E
- Volts
Capacitance - p F
C
ies
C
oes
C
res
f = 1 MHz
Fig. 13. Dependence of Turn-off
Sw itching Time on Temperature
100
150
200
250
300
350
400
450
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
Switching Time - nanoseconds
IC = 14A
t
d(off)
t
fi
- - - - - -
RG = 5Ω
VGE = 15V
VCE = 960V
IC = 28A
IC = 14A
IC = 56A
IC = 56A
Fig. 16. Reverse-Bias Safe
Ope r ating Ar e a
0
20
40
60
80
100
120
140
100 300 500 700 900 1100 1300
V
C E
- Volts
I
C
- Amperes
TJ = 125
º
C
RG = 5Ω
dV/dT < 10V/ns
