BB814 Silicon Variable Capacitance Diode 3 For FM radio tuners with extended frequency band High tuning ratio at low supply voltage (car radio) Monolithic chip (common cathode) for perfect dual diode tracking 2 Coded capacitance groups and group matching available 1 VPS05161 C1/C2 3 1 2 A1 A2 EHA07179 Type Marking Pin Configuration Package BB814 SH1 1=A1 2=A2 3=C1/2 SOT23 BB814 SH2 1=A1 2=A2 3=C1/2 SOT23 Maximum Ratings Parameter Symbol Diode reverse voltage VR 18 V Peak reverse voltage VRM 20 V Forward current IF 50 mA Operating temperature range Top -55 ... 125 C Storage temperature Tstg -55 ... 150 1 Value Unit Jul-05-2001 BB814 Electrical Characteristics at TA = 25C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. IR - - 20 IR - - 200 DC characteristics Reverse current nA VR = 16 V Reverse current VR = 16 V, TA = 60 C AC characteristics Diode capacitance pF CT VR = 2 V, f = 1 MHz 43 44.75 46.5 VR = 8 V, f = 1 MHz 19.1 20.8 22.7 CT2 /CT8 2.05 2.15 2.25 - CT /CT - - 3 % rs - 0.18 - Q - 200 - - Capacitance ratio VR = 2 V, VR = 8 V, f = 1 MHz Capacitance matching VR = 2 V, VR = 8 V, f = 1 MHz Series resistance VR = 2 V, f = 100 MHz Q factor VR = 2 V, f = 100 MHz CT Capacitance groups, coded 1, 2 Code CT (2V) 1 43 ... 45 2 44.5 ... 46.5 CT (8V) Unit 19.1 ... 21.95 pF 19.75 ... 22.7 pF 2 Jul-05-2001 BB814 Diode capacitance CT = f (VR) Capacitance ratio CTref / CT = f (V R) f = 1MHz per diode, Vref = parameter, f = 1MHz CT 80 pF 70 BB 814 EHD07054 C Tref 6 BB 814 EHD07057 CT 5 Vref = 1 V 60 4 2V 50 40 3V 3 30 2 20 1 10 0 10 -1 10 0 10 1 V VR 0 10 2 0 5 10 15 V 20 VR 3 Jul-05-2001