VISHAY
TLSV5100
Document Number 83052
Rev. 1.4, 20-Aug-04
Vishay Semiconductors
www.vishay.com
1
96 11496
Bicolor Symbol LED in 2.5 x 5 mm Untinted Top-Diffused
Package
Features
• Even luminance of the emitting surface
• Ideal as flush mounted panel indicators
• For DC and pulse operation
• Color mixing possible due to separate anode
terminals
• Luminous intensity selected into groups
• Categorized for green color
• Wide viewing angle
• Common cathode
• Lead-free device
Applications
Indicating and illumination purposes
Parts Table
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
TLSV5100
Part Color, Luminous Intensity Angle of Half Intensity (±ϕ)Technology
TLSV5100 Green, IV > 0.63 mcd 50 ° GaP on GaP
TLSV5100 Red, IV > 0.63 mcd 50 ° GaAsP on GaP
Parameter Test condition Symbol Value Unit
Reverse voltage per diode VR6V
DC Forward current per diode IF30 mA
Surge forward current per diode tp ≤ 10 µsI
FSM 1A
Power dissipation per diode Tamb ≤ 55 °C PV100 mW
Total power dissipation Tamb ≤ 55 °C Ptot 150 mW
Junction temperature Tj100 °C
Operating temperature range Tamb - 40 to + 100 °C
Storage temperature range Tstg - 55 to + 100 °C
Soldering temperature t ≤ 5 s, 2 mm from body Tsd 260 °C
Thermal resistance junction/
ambient per diode
RthJA 450 K/W
Thermal resistance junction/
ambient total
RthJA 300 K/W
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Document Number 83052
Rev. 1.4, 20-Aug-04
VISHAY
TLSV5100
Vishay Semiconductors
Optical and Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Red
TLSV5100R
1) in one Packing Unit IVmin/IVmax ≤ 0.5
Green
TLSV5100G
1) in one Packing Unit IVmin/IVmax ≤ 0.5
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
Parameter Test condition Symbol Min Ty p. Max Unit
Per diode
Luminous intensity 1) IF = 10 mA IV0.63 1 mcd
Dominant wavelength IF = 10 mA λd612 625 nm
Peak wavelength IF = 10 mA λp635 nm
Angle of half intensity IF = 10 mA ϕ± 50 deg
Forward voltage IF = 20 mA VF23V
Reverse voltage IR = 10 µAV
R615 V
Junction capacitance VR = 0, f = 1 MHz Cj50 pF
Parameter Test condition Symbol Min Ty p. Max Unit
Per diode
Luminous intensity 1) IF = 10 mA IV0.63 1 mcd
Dominant wavelength IF = 10 mA λd562 575 nm
Peak wavelength IF = 10 mA λp565 nm
Angle of half intensity IF = 10 mA ϕ± 50 deg
Forward voltage IF = 20 mA VF2.4 3 V
Reverse voltage IR = 10 µAV
R615 V
Junction capacitance VR = 0, f = 1 MHz Cj50 pF
Figure 1. Power Dissipation vs. Ambient Temperature
P - Power Dissipation ( mW )
V
95 9983
0
25
50
75
125
100
Tamb - Ambient Temperature ( °C)
02040 60 80 100
Figure 2. Forward Current vs. Ambient Temperature for InGaN
0
10
20
30
40
60
I - Forward Current ( mA )
F
Tamb - Ambient Temperature ( °C)
95 9984
50
0 20 40 60 80 100
VISHAY
TLSV5100
Document Number 83052
Rev. 1.4, 20-Aug-04
Vishay Semiconductors
www.vishay.com
3
Figure 3. Forward Current vs. Pulse Length
Figure 4. Rel. Luminous Intensity vs. Angular Displacement
Figure 5. Forward Current vs. Forward Voltage
tp/T = 0.01 0.02
0.05
0.1
0.2
1
0.5
0.01 0.1 1 10
1
10
100
1000
10000
tp- Pulse Length ( ms )
100
95 10085
I - Forward Current ( mA )
F
Tamb 55 °C
≤
0.4 0.2 0 0.2 0.4 0.6
95 10082
0.6
0.9
0.8
0°°
30°
10 20
40°
50°
60°
70°
80°
0.7
1.0
I - Relative Luminous Intensity
V rel
°
Red
tp/T = 0.001
tp=10µs
0.1
1
10
100
1000
95 10026
V
F
- Forward Voltage(V)
I - Forward Current ( mA )
F
1086420
Figure 6. Rel. Luminous Intensity vs. Ambient Temperature
Figure 7. Rel. Lumin. Intensity vs. Forw. Current/Duty Cycle
Figure 8. Relative Luminous Intensity vs. Forward Current
0
0
0.4
0.8
1.2
1.6
95 10027
20 40 60 80 100
I - Relative Luminous Intensity
v rel
Tamb - Ambient Temperature ( °C)
I
F
=10mA
Red
10 20 50 100 200
0
0.4
0.8
1.2
1.6
2.4
95 10321
500
0.5 0.2 0.1 0.05 0.021
IF(mA)
tp/T
2.0
Red
I - Relative Luminous Intensity
Vre l
0.01
0.1
1
10
IF- Forward Current ( mA )
10010
95 10029
I - Relative Luminous Intensity
v rel
Red
1
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Document Number 83052
Rev. 1.4, 20-Aug-04
VISHAY
TLSV5100
Vishay Semiconductors
Figure 9. Relative Intensity vs. Wavelength
Figure 10. Forward Current vs. Forward Voltage
Figure 11. Rel. Luminous Intensity vs. Ambient Temperature
590 610 630 650 670
0
0.2
0.4
0.6
0.8
1.2
690
95 10040
ıλ- Wavelength ( nm )
1.0
Red
I - Relative Luminous Intensity
Vre l
0.1
1
10
100
1000
1086420
95 10034
VF- Forward Voltage(V)
I - Forward Current ( mA )
F
Green
tp/T = 0.001
tp=10µs
0
0.4
0.8
1.2
1.6
95 10035
I - Relative Luminous Intensity
v rel
Green
IF=10mA
Tamb - Ambient Temperature ( °C)
20 40 60 800 100
Figure 12. Specific Luminous Intensity vs. Forward Current
Figure 13. Relative Luminous Intensity vs. Forward Current
Figure 14. Relative Intensity vs. Wavelength
10 20 50 100 200
0
0.4
0.8
1.2
1.6
2.4
95 10263
500
v rel
2.0
Green
I - Specific Luminous Intensity
IF(mA)
0.5 0.2 0.1 0.05 0.021 tp/T
IF- Forward Current ( mA )
100
Green
0.1
1
10
95 10037
I - Relative Luminous Intensity
v rel
101
520 540 560 580 600
0
0.2
0.4
0.6
0.8
1.2
620
95 10038
λ-- Wavelength ( nm )
1.0
Green
I - Relative Luminous Intensity
Vrel
VISHAY
TLSV5100
Document Number 83052
Rev. 1.4, 20-Aug-04
Vishay Semiconductors
www.vishay.com
5
Package Dimensions in mm
95 11327
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Document Number 83052
Rev. 1.4, 20-Aug-04
VISHAY
TLSV5100
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the
use of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
