TLSV5100 VISHAY Vishay Semiconductors Bicolor Symbol LED in 2.5 x 5 mm Untinted Top-Diffused Package Features * * * * * * * * * Even luminance of the emitting surface Ideal as flush mounted panel indicators For DC and pulse operation Color mixing possible due to separate anode terminals Luminous intensity selected into groups Categorized for green color Wide viewing angle Common cathode Lead-free device 96 11496 Applications Indicating and illumination purposes Parts Table Part Color, Luminous Intensity Angle of Half Intensity () Technology TLSV5100 Green, IV > 0.63 mcd 50 GaP on GaP TLSV5100 Red, IV > 0.63 mcd 50 GaAsP on GaP Absolute Maximum Ratings Tamb = 25 C, unless otherwise specified TLSV5100 Symbol Value Reverse voltage per diode Parameter VR 6 V DC Forward current per diode IF 30 mA Surge forward current per diode tp 10 s Power dissipation per diode Tamb 55 C IFSM 1 A PV 100 mW Tamb 55 C Ptot 150 mW Total power dissipation Test condition Junction temperature Unit Tj 100 C Operating temperature range Tamb - 40 to + 100 C Storage temperature range Tstg - 55 to + 100 C t 5 s, 2 mm from body Tsd 260 C Thermal resistance junction/ ambient per diode RthJA 450 K/W Thermal resistance junction/ ambient total RthJA 300 K/W Soldering temperature Document Number 83052 Rev. 1.4, 20-Aug-04 www.vishay.com 1 TLSV5100 VISHAY Vishay Semiconductors Optical and Electrical Characteristics Tamb = 25 C, unless otherwise specified Red TLSV5100R Parameter Test condition Symbol Min Typ. 1 Max Unit Per diode Luminous intensity 1) IF = 10 mA IV 0.63 612 mcd Dominant wavelength IF = 10 mA d Peak wavelength IF = 10 mA p 635 nm Angle of half intensity IF = 10 mA 50 deg Forward voltage IF = 20 mA VF Reverse voltage IR = 10 A VR Junction capacitance VR = 0, f = 1 MHz Cj 1) 625 2 6 3 nm V 15 V 50 pF in one Packing Unit IVmin/IVmax 0.5 Green TLSV5100G Parameter Test condition Symbol Min Typ. 1 Max Unit Per diode Luminous intensity 1) IF = 10 mA IV 0.63 562 mcd Dominant wavelength IF = 10 mA d Peak wavelength IF = 10 mA p 565 nm Angle of half intensity IF = 10 mA 50 deg Forward voltage IF = 20 mA VF Reverse voltage IR = 10 A VR Junction capacitance VR = 0, f = 1 MHz Cj 1) 575 2.4 6 3 nm V 15 V 50 pF in one Packing Unit IVmin/IVmax 0.5 125 60 100 50 IF - Forward Current ( mA ) PV - Power Dissipation ( mW ) Typical Characteristics (Tamb = 25 C unless otherwise specified) 75 50 25 0 95 9983 0 20 40 60 80 Figure 1. Power Dissipation vs. Ambient Temperature www.vishay.com 2 30 20 10 0 100 Tamb - Ambient Temperature ( C ) 40 0 95 9984 20 40 60 80 100 Tamb - Ambient Temperature ( C ) Figure 2. Forward Current vs. Ambient Temperature for InGaN Document Number 83052 Rev. 1.4, 20-Aug-04 TLSV5100 VISHAY Vishay Semiconductors I v rel - Relative Luminous Intensity t p /T = 0.01 1000 0.02 0.05 0.1 100 0.2 0.5 1 10 Tamb 55 C 0.1 1 10 I V rel - Relative Luminous Intensity 0 20 10 30 40 1.0 0.9 50 0.8 60 70 0.7 80 0.4 0.2 0 0.2 0.4 0.4 I F = 10 mA 0 Figure 4. Rel. Luminous Intensity vs. Angular Displacement Red 100 t p /T = 0.001 t p = 10 s 1 60 80 100 2.4 Red 2.0 1.6 1.2 0.8 0.4 0 10 20 50 100 200 500 I F (mA) 1 0.5 0.2 0.1 0.05 0.02 tp /T Figure 7. Rel. Lumin. Intensity vs. Forw. Current/Duty Cycle I v rel - Relative Luminous Intensity 1000 40 Tamb - Ambient Temperature ( C ) 95 10321 10 20 Figure 6. Rel. Luminous Intensity vs. Ambient Temperature 0.6 95 10082 I F - Forward Current ( mA ) 0.8 95 10027 Figure 3. Forward Current vs. Pulse Length 10 Red 1 0.1 0.01 0.1 0 95 10026 Red 1.2 100 t p - Pulse Length ( ms ) 95 10085 0.6 1.6 0 1 0.01 I V re l - Relative Luminous Intensity I F - Forward Current ( mA ) 10000 2 4 6 8 V F - Forward Voltage ( V ) Figure 5. Forward Current vs. Forward Voltage Document Number 83052 Rev. 1.4, 20-Aug-04 1 10 95 10029 10 100 I F - Forward Current ( mA ) Figure 8. Relative Luminous Intensity vs. Forward Current www.vishay.com 3 TLSV5100 VISHAY Vishay Semiconductors 2.4 Red I v rel - Specific Luminous Intensity I V re l - Relative Luminous Intensity 1.2 1.0 0.8 0.6 0.4 0.2 0 590 630 650 670 1.2 0.8 0.4 690 -i Wavelength ( nm ) 95 10040 95 10263 Figure 9. Relative Intensity vs. Wavelength I v rel - Relative Luminous Intensity Green 100 t p /T = 0.001 t p = 10 s 10 1 10 1 20 0.5 50 0.2 100 0.1 500 IF(mA) 0.02 tp/T 200 0.05 Figure 12. Specific Luminous Intensity vs. Forward Current 1000 I F - Forward Current ( mA ) 1.6 0 610 Green 2.0 10 Green 1 0.1 0.1 0 2 4 6 8 V F - Forward Voltage ( V ) 95 10034 0.8 95 10035 I F = 10 mA 0 20 40 60 80 100 T amb - Ambient Temperature ( C ) Figure 11. Rel. Luminous Intensity vs. Ambient Temperature www.vishay.com 4 Figure 13. Relative Luminous Intensity vs. Forward Current IVrel - Relative Luminous Intensity I v rel - Relative Luminous Intensity 1.2 0 100 1.2 Green 0.4 10 I F - Forward Current ( mA ) 95 10037 Figure 10. Forward Current vs. Forward Voltage 1.6 1 10 Green 1.0 0.8 0.6 0.4 0.2 0 520 95 10038 540 560 580 600 620 - Wavelength ( nm ) Figure 14. Relative Intensity vs. Wavelength Document Number 83052 Rev. 1.4, 20-Aug-04 TLSV5100 VISHAY Vishay Semiconductors Package Dimensions in mm 95 11327 Document Number 83052 Rev. 1.4, 20-Aug-04 www.vishay.com 5 TLSV5100 VISHAY Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423 www.vishay.com 6 Document Number 83052 Rev. 1.4, 20-Aug-04