TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841 Gort Road Business Park, Ennis, Co. Clare, Ireland
1-800-446-1158 / (978) 620-2600 / Fax: ( 978) 689-0803 Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
Website: http: //www.microsemi.com
LOW POWER PNP SILICONTRANSISTOR
Qualified per MIL-PRF-19500/177
T4-LDS-0 18 7 Rev . 1 (1 0 18 8 2) Page 1 of 3
DEVICES LEVELS
2N1131 2N1132 JAN
2N1131L 2N1132L JANTX
JANTXV
ABSOLUTE MAXIMUM RATI NG S (TC = +25°C unless otherwise noted)
Parameters / Test Conditions Symbol Value Unit
Collector-Emitter Voltage VCEO 40 Vdc
Collector-Base Voltage VCBO 50 Vdc
Emitter-Base Voltage VEBO 5.0 Vdc
Collector Current IC 600 mAdc
Total Power Dissipation
@ TA = +25°C (1)
@ TC = +25°C (2) PT 0.6
2.0 W
Operating & Storage Junction Temperature Range TJ, Tstg -65 to +200 °C
NOTES:
1/ Derate linearly 3.43mW/°C for TA > +25°C
2/ Derate linearly 11.4mW/°C for TC > +25°C
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)
Parameters / Test Conditions Symbol Min. Max. Unit
OFF CHARACTERTICS
Collector-Emitter Breakdown Voltage
V(BR)CEO
Vdc
IC = 10mAdc 40
Collector- Base Breakdown Voltage
V(BR)CBO
Vdc
IC = 10µAdc 50
Emitter-Base Cutoff Current
IEBO
VEB = 5.0Vdc 100 µAdc
Collector-Emitter Cutoff Current
ICER
mAdc
VCE = 50Vdc, RBE ≤ 10 ohms 10
Collector-Base Cutoff Current
ICBO
VCB = 50Vdc
VCB = 30Vdc 10
1.0
µAdc
TO-39
2N1131, 2N1 132
TO-5
2N1131L, 2N1132L
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841 Gort Road Business Park, Ennis, Co. Clare, Ireland
1-800-446-1158 / (978) 620-2600 / Fax: ( 978) 689-0803 Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
Website: http: //www.microsemi.com
T4-LDS-0 18 7 Rev . 1 (1 0 18 8 2) Page 2 of 3
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted) (CONT.)
Parameters / Test Conditions Symbol Min. Max. Unit
ON CHARACTERTICS (3)
Forward-Current Transfer Ratio
hFE
IC = 150mAdc, VCE = 10Vdc 2N1131, L
2N1132, L
20
30
45
90
IC = 5.0mAdc, VCE = 10Vdc 2N1131, L
2N1132, L
15
25
Collector-Emitter Saturation Voltage
VCE(sat)
Vdc
IC = 150mAdc, IB = 15mAdc 1.3
Base-Emitter Saturation Voltage
VBE(sat)
Vdc
IC = 150mAdc, IB = 15mAdc 1.5
DYNAMIC CHARACTERISTICS
Parameters / Test Conditions Symbol Min. Max. Unit
Small-Signal Short-Circuit Forward-Current Transfer Ratio
IC = 1.0mAdc, VCE = 5.0Vdc, f = 1.0kHz 2N1131, L
2N1132, L
hfe
15
30
50
90
IC = 5.0mAdc, VCE = 10Vdc, f = 1.0kHz 2N1131, L
2N1132, L
20
30
Small-Signal Open-Circuit Output Admittance
hob
µmho
IC = 1.0mAdc, VCE = 5.0Vdc, f = 1.0kHz
IC = 5.0mAdc, VCE = 10Vdc, f = 1.0kHz
1.0
5.0
Small-Signal Short-Circuit Input Impedance
Ω
IC = 1.0mAdc, VCE = 5.0Vdc, f = 1.0kHz
IC = 5.0mAdc, VCE = 10Vdc, f = 1.0kHz
hib
25 35
10
Magnitude of Common Emitter Small-Signal Short Circuit
Forward-Current Transfer Ratio |hfe|
IC = 50mAdc, VCE = 10Vdc, f = 20MHz 2N1131, L
2N1132, L
2.5
3.0
20
20
Output Capacitance Cobo
pF
VCB = 10Vdc, IE = 0, 100 kHz ≤ f ≤ 1.0MHz 4.5
Iutput Capacitance Cibo pF
VEB = 0.5Vdc, IC = 0, 100 kHz ≤ f ≤ 1.0MHz 80
SWITCHING CHARACTERISTICS
Parameters / Test Conditions Symbol Min. Max. Unit
Turn-On Time + Turn-Off Time
(See figure 2 of MIL-PRF-177)
ton + toff 50 ηs
(3) Pulse Test: Pulse Width = 300μs, Duty Cycle ≤ 2.0%
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841 Gort Road Business Park, Ennis, Co. Clare, Ireland
1-800-446-1158 / (978) 620-2600 / Fax: ( 978) 689-0803 Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
Website: http: //www.microsemi.com
T4-LDS-0 18 7 Rev . 1 (1 0 18 8 2) Page 3 of 3
NOTES:
1. Dimensions are in inches.
2. Millimeters are given for general information only.
3. Beyond r (radius) maximum, TW shall be held for a minimum length of .011 inch (0.28 mm).
4. Dimension TL measured from maximum HD.
5. Body contour optional within zone defined by HD, CD, and Q.
6. CD shall not vary more than .010 inch (0.25 mm) in zone P. This zone is controlled for automatic handling.
7. Leads at gauge plane .054 +.001, -.000 inch (1.37 +0.03, -0.00 mm) below seating plane shall be within .007 inch (0.18
mm) radius of true position (TP) at maximum material condition (MMC) relative to tab at MMC. The device may be
measured by direct methods or by gauging procedure.
8. Dimension LU applies between L1 and L2. Dimension LD applies between L2 and LL minimum. Diameter is
uncontrolled in and beyond LL minimum.
9. All three leads.
10. The collector shall be internally connected to the case.
11. Dimension r (radius) applies to both inside corners of tab.
12. In accordance with ASME Y14.5M, diameters are equivalent to φx symbology.
13. Lead 1 = emitter, lead 2 = base, lead 3 = collector.
14. * For L-suffix or non-S-suffix devices (TO-5), dimension LL = 1.5 inches (38.10 mm) min. and 1.75 inches (44.45 mm)
max. For non-L suffix types (TO-39), dimension LL = .5 inch (12.70 mm) min. and .750 inch (19.05 mm) max..
* FIGURE 1. Physical dimensions 2N1131 and 2N1132 ( TO-39), 2N1131L and 2N1132L (TO-5).
PACKAGE DIMENSIONS
Dimensions
Symbol Inches Millimeters Note
Min Max Min Max
CD .305 .335 7.75 8.51
CH .240 .260 6.10 6.60
HD .335 .370 8.51 9.40
LC .200 TP 5.08 TP 6
LD .016 .021 0.41 0.53 7, 8
LL .500 .750 12.70 19.05 7, 8, 12
LU .016 .019 0.41 0.48 7, 8
L1 .050 1.27 7, 8
L2 .250 6.35 7, 8
P .100 2.54
Q .050 1.27 5
TL .029 .045 0.74 1.14 4
TW .028 .034 0.71 0.86 3
r .010 0.25 10
α45° TP 45° TP 6
