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Toshiba Electronic Devices & Storage Corporation
TOSHIBA Diode Silicon Epitaxial Planar Type
1SS397
High Voltage, High Speed Switching Applications
Small package : SC-70
Low forward voltage : VF = 1.0 V (typ.)
High voltage : VR = 400 V (min)
Fast reverse recovery time : trr = 0.5 μs (typ.)
Small total capacitance : CT = 2.5 pF (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic Symbol Rating Unit
Maximum (peak) reverse Voltage VRM 420 V
Reverse voltage VR 400 V
Maximum (peak) forward current IFM 300 mA
Average forward current IO 100 mA
Surge current (10ms) IFSM 2 A
Power dissipation PD (Note 1) 200 mW
Junction temperature Tj 150 °C
Storage temperature range Tstg −55 to 150 °C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant
change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated
failure rate, etc).
Note 1： Mounted on a FR4 board. (25.4 mm × 25.4 mm × 1.6 mm, Cu pad: 0.5 mm2 × 3)
Electrical Characteristics (Ta = 25°C)
Characteristic Symbol Test Condition Min Typ. Max Unit
Forward voltage VF (1) IF = 10 mA ― 0.8 ―
V
VF (2) IF = 100 mA ― 1.0 1.3
Reverse current
IR (1) VR = 300 V ― ― 0.1
μA
IR (2) VR = 400 V ― ― 1.0
Total capacitance CT VR = 0 V, f = 1 MHz ― 2.5 5.0 pF
Reverse recovery time trr IF = 10 mA (Fig.1) ― 0.5 ― μs
JEDEC
―
JEI TA
SC-70
TOSHIBA
1-2P1D
Weight: 0.006g (typ.)
Start of commercial production
1995-10
Unit: mm
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Fig.1 Reverse Recovery Time (trr) Test Circuit
Equivalent Circuit (Top View)
Marking
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Characteristics Curves
The above characteristics curves are presented for reference only and not guaranteed by production test,
unless otherwise noted.
0
50
100
150
200
250
300
025 50 75 100 125 150
POWER DISSIPATION
PD(mW)
AMBIENT TEMPERATURE Ta(℃)
PD- Ta
Mounted on an FR4 board
(25.4 mm ×25.4 mm ×1.6 mm,
Cu pad: 0.5 mm2×3)
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Toshiba Electronic Devices & Storage Corporation
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