2011-09-15
1
BCW67, BCW68
1
2
3
PNP Silicon AF Transistors
• For general AF applications
• High current gain
• Low collector-emitter saturation voltage
• Complementary types: BCW66... (NPN)
• Pb-free (RoHS compliant) package
• Qualified according AEC Q101
Type Marking Pin Configuration Package
BCW67A
BCW67B
BCW67C
BCW68F
BCW68G
BCW68H
DAs
DBs
DCs
DFs
DGs
DHs
1=B
1=B
1=B
1=B
1=B
1=B
2=E
2=E
2=E
2=E
2=E
2=E
3=C
3=C
3=C
3=C
3=C
3=C
SOT23
SOT23
SOT23
SOT23
SOT23
SOT23
2011-09-15
2
BCW67, BCW68
Maximum Ratings
Parameter Symbol Value Unit
Collector-emitter voltage
BCW67
BCW68
VCEO
32
45
V
Collector-base voltage
BCW67
BCW68
VCBO
45
60
Emitter-base voltage VEBO 5
Collector current IC800 mA
Peak collector current, tp ≤ 10 ms ICM 1 A
Base current IB100 mA
Peak base current IBM 200
Total power dissipation, TS ≤ 79°C Ptot 330 mW
Junction temperature Tj150 °C
Storage temperature Tst
g
-65 ... 150
Thermal Resistance
Parameter Symbol Value Unit
Junction - soldering point1) RthJS ≤ 215 K/W
1For calculation of RthJA please refer to Application Note AN077 (Thermal Resistance Calculation)
2011-09-15
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BCW67, BCW68
Electrical Characteristics at T
A
= 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
IC = 10 mA, IB = 0 , BCW67
IC = 10 mA, IB = 0 , BCW68
V(BR)CEO
32
45
-
-
-
-
V
Collector-base breakdown voltage
IC = 10 µA, IE = 0 , BCW67
IC = 10 µA, IE = 0 , BCW68
V(BR)CBO
45
60
-
-
-
-
Emitter-base breakdown voltage
IE = 10 µA, IC = 0
V(BR)EBO 5 - -
Collector-base cutoff current
VCB = 32 V, IE = 0
VCB = 45 V, IE = 0
VCB = 32 V, IE = 0 , TA = 150 °C; BCW67
VCB = 45 V, IE = 0 , TA = 150 °C; BCW68
ICBO
-
-
-
-
-
-
-
-
0.02
0.02
20
20
µA
Emitter-base cutoff current
VEB = 4 V, IC = 0
IEBO - - 20 nA
DC current gain1)
IC = 100 µA, VCE = 10 V, hFE-grp.A/F
IC = 100 µA, VCE = 10 V, hFE-grp.B/G
IC = 100 µA, VCE = 10 V, hFE-grp.C/H
IC = 10 mA, VCE = 1 V, hFE-grp.A/F
IC = 10 mA, VCE = 1 V, hFE-grp.B/G
IC = 10 mA, VCE = 1 V, hFE-grp.C/H
IC = 100 mA, VCE = 1 V, hFE-grp.A/F
IC = 100 mA, VCE = 1 V, hFE-grp.B/G
IC = 100 mA, VCE = 1 V, hFE-grp.C/H
IC = 500 mA, VCE = 2 V, hFE-grp.A/F
IC = 500 mA, VCE = 2 V, hFE-grp.B/G
IC = 500 mA, VCE = 2 V, hFE-grp.C/H
hFE
35
50
80
75
120
180
100
160
250
35
60
100
-
-
-
-
-
-
160
250
350
-
-
-
-
-
-
-
-
-
250
400
630
-
-
-
-
2011-09-15
4
BCW67, BCW68
DC Electrical Characteristics
Parameter Symbol Values Unit
min. typ. max.
Characteristics
Collector-emitter saturation voltage1)
IC = 100 mA, IB = 10 mA
IC = 500 mA, IB = 50 mA
VCEsat
-
-
-
-
0.3
0.7
V
Base emitter saturation voltage1)
IC = 100 mA, IB = 10 mA
IC = 500 mA, IB = 50 mA
VBEsat
-
-
-
-
1.25
2
AC Characteristics
Transition frequency
IC = 50 mA, VCE = 5 V, f = 20 MHz
fT- 200 - MHz
Collector-base capacitance
VCB = 10 V, f = 1 MHz
Ccb - 6 - pF
Emitter-base capacitance
VEB = 0.5 V, f = 1 MHz
Ceb - 60 -
1Pulse test: t < 300µs; D < 2%
2011-09-15
5
BCW67, BCW68
DC current gain hFE = ƒ(IC)
VCE = 1 V
10 10 10 10
BCW 67/68 EHP00403
h
mA
-1 023
FE
3
10
102
0
10
5
5
101
1
10
5
100
25
-50
555
C
Ι
˚C
˚C
˚C
Collector-emitter saturation voltage
IC = ƒ(VCEsat), hFE = 10
10 0 600
BCW 67/68 EHP00402
VCE sat
10
mA
10
10
10
3
2
1
0
-1
5
5
5
mV
200 400 800
150
25
-50
C
Ι
˚C
˚C
˚C
Base-emitter saturation voltage
IC = ƒ(VBEsat), hFE = 10
10 03
BCW 67/68 EHP00401
V
BE sat
10
mA
10
10
10
3
2
1
0
-1
5
5
5
V
12 4
150
25
-50
C
Ι
˚C
˚C
˚C
Collector cutoff current ICBO = ƒ(TA)
VCBO = 25 V
10 0 50 100 150
BCW 67/68 EHP00400
T
A
5
10
10
nA
10
Ι
CB0
5
5
5
10
10
5
4
3
2
1
0
max
typ
˚C
2011-09-15
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BCW67, BCW68
Transition frequency fT = ƒ(IC)
VCE = 5 V
10 10 10 10
BCW 67/68 EHP00398
f
mA
MHz
0123
5
T
3
10
10
2
1
10
5
5
5
C
Ι
Collector-base capacitance Ccb = ƒ(VCB)
Emitter-base capacitance Ceb = ƒ(VEB)
0 2 4 6 8 10 12 14 16 V20
VCB/VEB
0
5
10
15
20
25
30
35
40
45
50
55
pF
65
CCB/CEB
CCB
CEB
Total power dissipation Ptot = ƒ(TS)
0 15 30 45 60 75 90 105 120 A150
0
30
60
90
120
150
180
210
240
270
300
V
360
Permissible Pulse Load
Ptotmax/PtotDC = ƒ(tp)
10
EHP00399BCW 67/68
-6
0
10
5
D
=
5
10
1
5
10
2
3
10
10
-5
10
-4
10
-3
10
-2
10
0
s
0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
t
p
=
DT
t
p
T
totmax
tot
P
DC
P
p
t
2011-09-15
7
BCW67, BCW68
Package SOT23
Package Outline
Foot Print
Marking Layout (Example)
Standard Packing
Reel ø180 mm = 3.000 Pieces/Reel
Reel ø330 mm = 10.000 Pieces/Reel
EH
s
BCW66
Type code
Pin 1
0.8
0.9 0.91.3
0.8 1.2
0.25
M
BC
1.9
-0.05
+0.1
0.4
±0.1
2.9
0.95
C
B
0...8˚
0.2 A
0.1 MAX.
10˚ MAX.
0.08...0.15
1.3
±0.1
10˚ MAX.
M
2.4
±0.15
±0.1
1
A
0.15 MIN.
1)
1) Lead width can be 0.6 max. in dambar area
12
3
3.15
4
2.65
2.13
0.9
8
0.2
1.15
Pin 1
Manufacturer
2005, June
Date code (YM)
2011-09-15
8
BCW67, BCW68
Edition 2009-11-16
Published by
Infineon Technologies AG
81726 Munich, Germany
2009 Infineon Technologies AG
All Rights Reserved.
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of conditions or characteristics. With respect to any examples or hints given herein,
any typical values stated herein and/or any information regarding the application of
the device, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation, warranties of non-infringement of
intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices,
please contact the nearest Infineon Technologies Office (<www.infineon.com>).
Warnings
Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact the nearest Infineon
Technologies Office.
Infineon Technologies components may be used in life-support devices or systems
only with the express written approval of Infineon Technologies, if a failure of such
components can reasonably be expected to cause the failure of that life-support
device or system or to affect the safety or effectiveness of that device or system.
Life support devices or systems are intended to be implanted in the human body or
to support and/or maintain and sustain and/or protect human life. If they fail, it is
reasonable to assume that the health of the user or other persons may be
endangered.