©2002 Fairchild Semiconductor Corporation Rev. A1, August 2002
BC184LC
Absolute Maximum Ratings TC=25°C unless otherwise noted
Electrical Characteristics TC=25°C unless otherwise noted
Notes:
1. These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
3. These ratings are based on a maximum junction temperature of 150degrees C.
Symbol Parameter Value Units
VCBO Collector-Base Voltage 45 V
VCEO Collector-Emitter Voltage 30 V
VEBO Emitter-Base Voltage 5 V
ICCollector Current (DC) 200 mA
PCCollector Dissipation (Ta=25°C) (Note 2, 3) 625 mW
TJJunction Temperature 150 °C
TSTG Storage Temperature - 55 ~ 150 °C
Symbol Parameter Test Condition Min. Typ. Max. Units
BVCBO Collector-Base Voltage IC = 10µA45V
BVCEO Collector-E mit ter Voltage IC = 2mA 30 V
BVEBO Emitter-Base Voltage IE = 10µA5V
ICBO Collector Cut-off Current VCB = 30V 15 nA
IEBO Emitter Cut-off Current VEB = 3V 15 nA
hFE DC Current Gain VCE = 5V, IC = 1 0µA
VCE = 5V, IC = 2mA
VCE = 5V, IC = 100mA
100
250
130
VCE(sat) Collector-Emit ter Saturati on Vo ltage IC = 10mA, IB = 0.5m A
IC = 100mA, IB = 5mA 0.25
0.6 V
VBE(sat) Base-Emitter Saturat ion Voltage IC = 100mA, IB = 5mA 1.2 V
VBE(on) Base-Emit ter On Vo ltage VCE = 5V, IC = 2mA 0.55 0.7 V
COB Output Capacitance VCE = 10V, f = 1MHz 5 pF
fTCurrent gain Bandwidth Product VCE = 5V, IC = 10mA
f = 100MHz 150 MHz
hFE Small Signal Current Gain VCE = 5V, I C = 2mA
f = 1KHz 450 900
NF Noise Figure VCE = 5V, IC = 200mA
RG = 2K, f = 1KHz 4dB
BC184LC
Silicon NPN Small Signal Transistor (Note 1)
•BV
CEO = 30V (Min.)
•h
FE = 250 (Min.) @VCE = 5.0V, IC = 2mA
1. Emitter 2. Collector 3. Base
TO-92
1
Package Dimensions
BC184LC
0.46 ±0.10
1.27TYP
(R2.29)
3.86MAX
[1.27 ±0.20]1.27TYP
[1.27 ±0.20]
3.60 ±0.20
14.47 ±0.40
1.02 ±0.10
(0.25) 4.58 ±0.20
4.58 +0.25
–0.15
0.38 +0.10
–0.05
0.38 +0.10
–0.05
TO-92
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation Rev. A1, August 2002
©2002 Fairchild Semiconductor Corporation Rev. I1
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