Preliminary Technical Information IXFA26N50P3 IXFP26N50P3 IXFQ26N50P3 IXFH26N50P3 Polar3TM HiperFETTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier VDSS ID25 = 500V = 26A 240m RDS(on) TO-220AB (IXFP) TO-263 AA (IXFA) G G S DS D (Tab) TO-3P (IXFQ) D (Tab) Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 500 V VDGR TJ = 25C to 150C, RGS = 1M 500 V VGSS VGSM Continuous Transient 30 40 V V ID25 TC = 25C 26 A IDM TC = 25C, Pulse Width Limited by TJM 78 A IA TC = 25C 13 A EAS TC = 25C 300 mJ dv/dt IS IDM, VDD VDSS, TJ 150C 35 V/ns PD TC = 25C 500 W -55 ... +150 C TJM 150 C Tstg -55 ... +150 C TJ TL TSOLD Maximum Lead Temperature for Soldering Plastic Body for 10s 300 260 C C FC Md Mounting Force (TO-263) 10..65 / 2.2..14.6 Mounting Torque (TO-220, TO-3P & TO-247) 1.13 / 10 N/lb Nm/lb.in Weight TO-263 TO-220 TO-3P TO-247 G D g g g g G Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 1mA 500 VGS(th) VDS = VGS, ID = 4mA 3.0 IGSS VGS = 30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) VGS = 10V, ID = 0.5 * ID25, Note 1 TJ = 125C (c) 2013 IXYS CORPORATION, All Rights Reserved 5.0 V 100 nA 25 A 750 A 240 m S D (Tab) D = Drain Tab = Drain Features Fast Intrinsic Rectifier Avalanche Rated Low RDS(ON) and QG Low Package Inductance Advantages V D G = Gate S = Source Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) D (Tab) TO-247 (IXFH) 2.5 3.0 5.5 6.0 S High Power Density Easy to Mount Space Savings Applications Switch-Mode and Resonant-Mode Power Supplies DC-DC Converters Laser Drivers AC and DC Motor Drives Robotics and Servo Controls DS100457A(10/13) IXFA26N50P3 IXFP26N50P3 IXFQ26N50P3 IXFH26N50P3 Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) gfs Characteristic Values Min. Typ. Max. VDS = 20V, ID = 0.5 * ID25, Note 1 14 Ciss Coss 23 S 2220 pF 280 pF 8 pF VGS = 0V, VDS = 25V, f = 1MHz Crss RGi Gate Input Resistance td(on) Resistive Switching Times tr td(off) tf 2.1 21 ns ns 5 ns 42 nC 11 nC 15 nC 0.50 0.25 0.25 C/W C/W C/W RG = 3 (External) VGS = 10V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 TO-220 TO-247 & TO-3P ns 7 Qgd RthJC RthCS 38 VGS = 10V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 Qg(on) Qgs Source-Drain Diode Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) IS VGS = 0V ISM VSD trr IRM QRM Note Characteristic Values Min. Typ. Max. 26 A Repetitive, Pulse Width Limited by TJM 104 A IF = IS, VGS = 0V, Note 1 1.4 V 250 ns IF = 13A, -di/dt = 100A/s VR = 100V, VGS = 0V 10.2 A 0.9 C 1. Pulse test, t 300s, duty cycle, d 2%. PRELIMINARYTECHNICALINFORMATION The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFA26N50P3 IXFP26N50P3 IXFQ26N50P3 IXFH26N50P3 Fig. 1. Output Characteristics @ T J = 25C Fig. 2. Extended Output Characteristics @ T J = 25C 28 VGS = 10V 8V 7V 24 7V 40 20 6V ID - Amperes ID - Amperes VGS = 10V 8V 50 16 12 30 6V 20 8 10 4 5V 5V 0 0 0 1 2 3 4 5 6 7 0 5 10 15 25 30 Fig. 4. RDS(on) Normalized to ID = 13A Value vs. Junction Temperature Fig. 3. Output Characteristics @ T J = 125C 28 3.4 VGS = 10V 7V VGS = 10V 3.0 24 2.6 RDS(on) - Normalized 20 6V ID - Amperes 20 VDS - Volts VDS - Volts 16 12 5V I D = 26A 2.2 1.8 I D = 13A 1.4 8 1.0 4 0.6 4V 0 0.2 0 2 4 6 8 10 12 14 16 -50 -25 0 VDS - Volts 25 50 75 100 125 150 125 150 TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 13A Value vs. Drain Current Fig. 6. Maximum Drain Current vs. Case Temperature 3.8 28 VGS = 10V 3.4 24 TJ = 125 C 20 ID - Amperes RDS(on) - Normalized 3.0 2.6 2.2 1.8 TJ = 25 C 16 12 8 1.4 4 1.0 0 -50 0.6 0 5 10 15 20 25 30 35 ID - Amperes (c) 2013 IXYS CORPORATION, All Rights Reserved 40 45 50 55 -25 0 25 50 75 TC - Degrees Centigrade 100 IXFA26N50P3 IXFP26N50P3 IXFQ26N50P3 IXFH26N50P3 Fig. 7. Input Admittance Fig. 8. Transconductance 30 45 TJ = - 40 C 40 25 35 15 g f s - Siemens ID - Amperes 20 TJ = 125C 25C - 40 C 10 25C 30 25 125C 20 15 10 5 5 0 0 3.0 3.5 4.0 4.5 5.0 5.5 6.0 0 6.5 5 10 15 VGS - Volts 20 25 30 ID - Amperes Fig. 9. Forward Voltage Drop of Intrinsic Diode Fig. 10. Gate Charge 10 80 VDS = 250V I D = 13A I G = 10mA 9 70 8 60 7 VGS - Volts IS - Amperes 50 40 30 TJ = 125C 5 4 3 TJ = 25C 20 6 2 10 1 0 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 0 5 10 VSD - Volts 20 25 30 35 40 45 QG - NanoCoulombs Fig. 11. Capacitance Fig. 12. Forward-Bias Safe Operating Area 100 10,000 RDS(on) Limit C iss 25s 100s 1,000 10 ID - Amperes Capacitance - PicoFarads 15 Coss 100 1 10 TJ = 150 C TC = 25 C Single Pulse Crss 1ms f = 1 MHz 1 0.1 0 5 10 15 20 25 30 35 40 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 10 100 VDS - Volts 1,000 IXFA26N50P3 IXFP26N50P3 IXFQ26N50P3 IXFH26N50P3 Fig. 13. Maximum Transient Thermal Impedance 1 Z (th)JC - C / W 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds (c) 2013 IXYS CORPORATION, All Rights Reserved IXYS REF: F_26N50P3(W6) 3-26-12 IXFA26N50P3 IXFP26N50P3 IXFQ26N50P3 IXFH26N50P3 TO-3P Outline TO-263 Outline 1. 2. 3. 4. Gate Drain Source Drain Dim. Millimeter Min. Max. Inches Min. Max. A b b2 4.06 0.51 1.14 4.83 0.99 1.40 .160 .020 .045 .190 .039 .055 c c2 0.40 1.14 0.74 1.40 .016 .045 .029 .055 D D1 8.64 8.00 9.65 8.89 .340 .280 .380 .320 E 9.65 10.41 .380 .405 E1 e L L1 L2 L3 L4 6.22 2.54 14.61 2.29 1.02 1.27 0 8.13 BSC 15.88 2.79 1.40 1.78 0.13 .270 .100 .575 .090 .040 .050 0 .320 BSC .625 .110 .055 .070 .005 1. 2. 3. 4. Gate Drain Source Drain TO-247 Outline TO-220 Outline 1 2 P 3 Pins: 1 - Gate 2 - Drain 3 - Source e Terminals: 1 - Gate 3 - Source Dim. Millimeter Min. Max. A 4.7 5.3 A1 2.2 2.54 A2 2.2 2.6 b 1.0 1.4 1.65 2.13 b1 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 2 - Drain Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC