© Semiconductor Components Industries, LLC, 1994
November, 2016 − Rev. 9 1Publication Order Number:
BCX17LT1/D
BCX17LT1G, PNP
BCX18LT1G, PNP
BCX19LT1G, NPN
SBCX19LT1G, NPN
General Purpose
Transistors
Voltage and Current are Negative for
PNP Transistors
Features
•S and NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
•These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector − Emitter Voltage
BCX17, BCX19
BCX18
VCEO 45
25
Vdc
Collector − Base Voltage
BCX17, BCX19
BCX18
VCBO 50
30
Vdc
Emitter − Base Voltage VEBO 5.0 Vdc
Collector Current − Continuous IC500 mAdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR−5 Board
(Note 1), TA = 25°C
Derate above 25°C
PD225
1.8
mW
mW/°C
Thermal Resistance,
Junction−to−Ambient RqJA 556 °C/W
Total Device Dissipation Alumina
Substrate, (Note 2) TA = 25°C
Derate above 25°C
PD300
2.4 mW
mW/°C
Thermal Resistance,
Junction−to−Ambient RqJA 417 °C/W
Junction and Storage Temperature TJ, Tstg −55 to +150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be af fected.
1. FR−5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in 99.5% alumina.
SOT−23
(TO−236)
CASE 318−08
STYLE 6
MARKING DIAGRAM
COLLECTOR
3
1
BASE
2
EMITTER
PNP NPN
1
XX M G
G
(Note: Microdot may be in either location)
XX = T1, T2 or U1
M = Date Code*
G= Pb−Free Package
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
ORDERING INFORMATION
COLLECTOR
3
1
BASE
2
EMITTER
www.onsemi.com
BCX17LT1G, PNP BCX18LT1G, PNP BCX19LT1G, NPN SBCX19LT1G, NPN
www.onsemi.com
2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage
(IC = 10 mAdc, IB = 0)
BCX17, BCX19, SBCX19
BCX18
V(BR)CEO
45
25 −
−−
−
Vdc
Collector−Emitter Breakdown Voltage
(IC = 10 mAdc, IC = 0)
BCX17, BCX19, SBCX19
BCX18
V(BR)CES
50
30 −
−−
−
Vdc
Collector Cutoff Current
(VCB = 20 Vdc, IE = 0)
(VCB = 20 Vdc, IE = 0, TA = 150°C)
ICBO −
−−
−100
5.0 nAdc
mAdc
Emitter Cutoff Current
(VEB = 5.0 Vdc, IC = 0) IEBO − − 10 mAdc
ON CHARACTERISTICS
DC Current Gain
(IC = 100 mAdc, VCE = 1.0 Vdc)
(IC = 300 mAdc, VCE = 1.0 Vdc)
(IC = 500 mAdc, VCE = 1.0 Vdc)
hFE 100
70
40
−
−
−
600
−
−
−
Collector−Emitter Saturation Voltage
(IC = 500 mAdc, IB = 50 mAdc) VCE(sat) − − 0.62 Vdc
Base−Emitter On Voltage
(IC = 500 mAdc, VCE = 1.0 Vdc) VBE(on) − − 1.2 Vdc
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
ORDERING INFORMATION
Device Specific Marking Package Shipping†
BCX17LT1G T1 SOT−23
(Pb−Free) 3,000 / Tape & Reel
NSVBCX17LT1G* T1 SOT−23
(Pb−Free) 3,000 / Tape & Reel
BCX18LT1G T2 SOT−23
(Pb−Free) 3,000 / Tape & Reel
BCX19LT1G U1 SOT−23
(Pb−Free) 3,000 / Tape & Reel
SBCX19LT1G* U1 SOT−23
(Pb−Free) 3,000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
*S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable.
BCX17LT1G, PNP BCX18LT1G, PNP BCX19LT1G, NPN SBCX19LT1G, NPN
www.onsemi.com
3
IC, COLLECTOR CURRENT (mA)
Figure 1. DC Current Gain
hFE, DC CURRENT GAIN
1000
10
10000.1 10 100
100
1.0
VCE = 1 V
TJ = 25°C
IB, BASE CURRENT (mA)
Figure 2. Saturation Region
IC, COLLECTOR CURRENT (mA)
Figure 3. “On” Voltages
100
10
1
VR, REVERSE VOLTAGE (VOLTS)
Figure 4. Temperature Coefficients
+1
IC, COLLECTOR CURRENT (mA)
Figure 5. Capacitances
0.1 11 10 100 1000
-2
-1
0
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
V, VOLTAGE (VOLTS)
V, TEMPERATURE COEFFICIENTS (mV/ C)°θ
C, CAPACITANCE (pF)
1.0
0.8
0.6
0.4
0.2
0
0.01 0.1 10 1001
1.0
0.8
0.6
0.4
0.2
0
1 10 1000100
10 100
TJ = 25°C
IC = 10 mA
TA = 25°CVBE(sat) @ IC/IB = 10
VBE(on) @ VCE = 1 V
VCE(sat) @ IC/IB = 10
qVC for VCE(sat)
qVB for VBE
Cob
Cib
100 mA 300 mA 500 mA
BCX17LT1G, PNP BCX18LT1G, PNP BCX19LT1G, NPN SBCX19LT1G, NPN
www.onsemi.com
4
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AR
D
A1
3
12
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.
MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF
THE BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
SOLDERING FOOTPRINT*
VIEW C
L
0.25
L1
e
EE
b
A
SEE VIEW C
DIM
AMIN NOM MAX MIN
MILLIMETERS
0.89 1.00 1.11 0.035
INCHES
A1 0.01 0.06 0.10 0.000
b0.37 0.44 0.50 0.015
c0.08 0.14 0.20 0.003
D2.80 2.90 3.04 0.110
E1.20 1.30 1.40 0.047
e1.78 1.90 2.04 0.070
L0.30 0.43 0.55 0.012
0.039 0.044
0.002 0.004
0.017 0.020
0.006 0.008
0.114 0.120
0.051 0.055
0.075 0.080
0.017 0.022
NOM MAX
L1
H
2.10 2.40 2.64 0.083 0.094 0.104
HE0.35 0.54 0.69 0.014 0.021 0.027
c0 −−− 10 0 −−− 10
T°°°°
T
3X
TOP VIEW
SIDE VIEW END VIEW
2.90
0.80
DIMENSIONS: MILLIMETERS
0.90
PITCH
3X
3X 0.95
RECOMMENDED
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
STYLE 6:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
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P
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Phone: 81−3−5817−1050
BCX17LT1/D
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