© Semiconductor Components Industries, LLC, 2010
February, 2010 − Rev. 10
1Publication Order Number:
MCR100/D
MCR100 Series
Sensitive Gate
Silicon Controlled Rectifiers
Reverse Blocking Thyristors
PNPN devices designed for high volume, line-powered consumer
applications such as relay and lamp drivers, small motor controls, gate
drivers for larger thyristors, and sensing and detection circuits.
Supplied in an inexpensive plastic TO-226AA package which is
readily adaptable for use in automatic insertion equipment.
Features
•Sensitive Gate Allows Triggering by Microcontrollers and Other
Logic Circuits
•Blocking Voltage to 600 V
•On−State Current Rating of 0.8 A RMS at 80°C
•High Surge Current Capability − 10 A
•Minimum and Maximum Values of IGT, VGT and IH Specified
for Ease of Design
•Immunity to dV/dt − 20 V/msec Minimum at 110°C
•Glass-Passivated Surface for Reliability and Uniformity
•Pb−Free Packages are Available*
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
SCRs
0.8 A RMS
100 thru 600 V
TO−92
CASE 29
STYLE 10
PIN ASSIGNMENT
1
2
3
Gate
Anode
Cathode
K
G
A
See detailed ordering and shipping information on page 5 of
this data sheet.
ORDERING INFORMATION
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x = Specific Device Code
A = Assembly Location
Y = Year
WW = Work Week
G= Pb−Free Package
MARKING DIAGRAM
MCR
100−x
AYWWG
G
123
12
BENT LEAD
TAPE & REEL
AMMO PACK
STRAIGHT LEAD
BULK PACK
3
(Note: Microdot may be in either location)
MCR100 Series
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2
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating Symbol Value Unit
Peak Repetitive Off−State Voltage (Notes 1 and 2)
(TJ = *40 to 110°C, Sine Wave, 50 to 60 Hz; RGK = 1 kW)
MCR100−3
MCR100−4
MCR100−6
MCR100−8
VDRM,
VRRM
100
200
400
600
V
On-State RMS Current, (TC = 80°C) 180° Conduction Angles IT(RMS) 0.8 A
Peak Non-Repetitive Surge Current, (1/2 Cycle, Sine Wave, 60 Hz, TJ = 25°C) ITSM 10 A
Circuit Fusing Consideration, (t = 8.3 ms) I2t 0.415 A2s
Forward Peak Gate Power, (TA = 25°C, Pulse Width v 1.0 ms) PGM 0.1 W
Forward Average Gate Power, (TA = 25°C, t = 8.3 ms) PG(AV) 0.01 W
Forward Peak Gate Current, (TA = 25°C, Pulse Width v 1.0 ms) IGM 1.0 A
Reverse Peak Gate Voltage, (TA = 25°C, Pulse Width v 1.0 ms) VGRM 5.0 V
Operating Junction Temperature Range @ Rate VRRM and VDRM TJ−40 to 110 °C
Storage Temperature Range Tstg −40 to 150 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate
voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current
source such that the voltage ratings of the devices are exceeded.
2. See ordering information for exact device number options.
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance,Junction−to−Case
Junction−to−Ambient
RqJC
RqJA
75
200
°C/W
Lead Solder Temperature
(t1/16″ from case, 10 secs max)
TL260 °C
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Peak Repetitive Forward or Reverse Blocking Current (Note 3)
TC = 25°C
(VD = Rated VDRM and VRRM; RGK = 1 kW)T
C = 110°C
IDRM, IRRM
−
−
−
−
10
100
mA
ON CHARACTERISTICS
Peak Forward On−State Voltage*
(ITM = 1.0 A Peak @ TA = 25°C)
VTM − − 1.7 V
Gate Trigger Current (Note 4) TC = 25°C
(VAK = 7.0 Vdc, RL = 100 W)
IGT −40 200 mA
Holding Current (Note 3) TC = 25°C
(VAK = 7.0 Vdc, Initiating Current = 20 mA, RGK = 1 kW)T
C = −40°C
IH−
−
0.5
−
5.0
10
mA
Latch Current (Note 4) TC = 25°C
(VAK = 7.0 V, Ig = 200 mA) TC = −40°C
IL−
−
0.6
−
10
15
mA
Gate Trigger Voltage (Note 4) TC = 25°C
(VAK = 7.0 Vdc, RL = 100 W)T
C = −40°C
VGT −
−
0.62
−
0.8
1.2
V
DYNAMIC CHARACTERISTICS
Critical Rate of Rise of Off−State Voltage
(VD = Rated VDRM, Exponential Waveform, RGK = 1 kW,TJ = 110°C)
dV/dt 20 35 −V/ms
Critical Rate of Rise of On−State Current
(IPK = 20 A; Pw = 10 msec; diG/dt = 1 A/msec, Igt = 20 mA)
di/dt − − 50 A/ms
*Indicates Pulse Test: Pulse Width ≤ 1.0 ms, Duty Cycle ≤ 1%.
3. RGK = 1000 W included in measurement.
4. Does not include RGK in measurement.
MCR100 Series
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3
+ Current
+ Voltage
VTM
IDRM at VDRM
IH
Symbol Parameter
VDRM Peak Repetitive Off State Forward Voltage
IDRM Peak Forward Blocking Current
VRRM Peak Repetitive Off State Reverse Voltage
IRRM Peak Reverse Blocking Current
VTM Peak on State Voltage
IHHolding Current
Voltage Current Characteristic of SCR
Anode +
on state
Reverse Blocking Region
(off state)
Reverse Avalanche Region
Anode −
Forward Blocking Region
IRRM at VRRM
(off state)
Figure 1. Typical Gate Trigger Current versus
Junction Temperature
TJ, JUNCTION TEMPERATURE (°C)
100
90
80
70
60
50
40
30
1105035205−10−25−40
GATE TRIGGER CURRENT ( A)
Figure 2. Typical Gate Trigger Voltage versus
Junction Temperature
TJ, JUNCTION TEMPERATURE (°C)
110655035205−10−25−40
0.8
0.7
0.6
0.5
0.4
0.3
GATE TRIGGER VOLTAGE (VOLTS)
0.2
20
10
0.9
1.0
958065
m
9580
MCR100 Series
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4
DC
Figure 3. Typical Holding Current versus
Junction Temperature
TJ, JUNCTION TEMPERATURE (°C)
1000
100
110655035205−10−25−40
HOLDING CURRENT ( A)
Figure 4. Typical Latching Current versus
Junction Temperature
10
Figure 5. Typical RMS Current Derating
IT(RMS), RMS ON-STATE CURRENT (AMPS)
120
110
100
90
80
70
60
50
0.50.40.30.20.10
TC, MAXIMUM ALLOWABLE CASE TEMPERATURE ( C)°
Figure 6. Typical On−State Characteristics
VT
, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS)
3.53.22.32.01.71.41.10.80.5
1
IT, INSTANTANEOUS ON-STATE CURRENT (AMPS)
0.140
10
9580
m
TJ, JUNCTION TEMPERATURE (°C)
1000
100
110655035205−10−25−40
LATCHING CURRENT ( A)
10 9580
m
30°60°90°120°
180°
2.92.6
MAXIMUM @ TJ = 110°C
MAXIMUM @ TJ = 25°C
MCR100 Series
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5
ORDERING INFORMATION
Device Package Code Shipping†
MCR100−003
TO−92 (TO−226)
5000 Units / Box
MCR100−004
MCR100−006
MCR100−008
MCR100−3RL
2000 / Tape & Reel
MCR100−6RL
MCR100−6RLRA
MCR100−6RLRM
2000 / Tape & Ammo Pack
MCR100−6ZL1
MCR100−8RL 2000 / Tape & Reel
MCR100−3G
TO−92 (TO−226)
(Pb−Free)
5000 Units / Box
MCR100−4G
MCR100−6G
MCR100−8G
MCR100−3RLG
2000 / Tape & Reel
MCR100−6RLG
MCR100−6RLRAG
MCR100−4RLRMG
2000 / Tape & Ammo Pack
MCR100−6RLRMG
MCR100−6ZL1G
MCR100−8RLG 2000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
MCR100 Series
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6
TO−92 EIA RADIAL TAPE IN BOX OR ON REEL
H2A H2A
H
F1
F2
P2 P2
P1 P
D
W
W1
L1
W2
H2B H2B
T1
T
T2
H4 H5
H1
L
Figure 7. Device Positioning on Tape
Symbol Item
Specification
Inches Millimeter
Min Max Min Max
DTape Feedhole Diameter 0.1496 0.1653 3.8 4.2
D2 Component Lead Thickness Dimension 0.015 0.020 0.38 0.51
F1, F2 Component Lead Pitch 0.0945 0.110 2.4 2.8
HBottom of Component to Seating Plane .059 .156 1.5 4.0
H1 Feedhole Location 0.3346 0.3741 8.5 9.5
H2A Deflection Left or Right 0 0.039 0 1.0
H2B Deflection Front or Rear 0 0.051 0 1.0
H4 Feedhole to Bottom of Component 0.7086 0.768 18 19.5
H5 Feedhole to Seating Plane 0.610 0.649 15.5 16.5
LDefective Unit Clipped Dimension 0.3346 0.433 8.5 11
L1 Lead Wire Enclosure 0.09842 — 2.5 —
PFeedhole Pitch 0.4921 0.5079 12.5 12.9
P1 Feedhole Center to Center Lead 0.2342 0.2658 5.95 6.75
P2 First Lead Spacing Dimension 0.1397 0.1556 3.55 3.95
TAdhesive Tape Thickness 0.06 0.08 0.15 0.20
T1 Overall Taped Package Thickness — 0.0567 — 1.44
T2 Carrier Strip Thickness 0.014 0.027 0.35 0.65
WCarrier Strip Width 0.6889 0.7481 17.5 19
W1 Adhesive Tape Width 0.2165 0.2841 5.5 6.3
W2 Adhesive Tape Position .0059 0.01968 .15 0.5
NOTES:
1. Maximum alignment deviation between leads not to be greater than 0.2 mm.
2. Defective components shall be clipped from the carrier tape such that the remaining protrusion (L) does not exceed a maximum of 11 mm.
3. Component lead to tape adhesion must meet the pull test requirements.
4. Maximum non−cumulative variation between tape feed holes shall not exceed 1 mm in 20 pitches.
5. Hold down tape not to extend beyond the edge(s) of carrier tape and there shall be no exposure of adhesive.
6. No more than 1 consecutive missing component is permitted.
7. A tape trailer and leader, having at least three feed holes is required before the first and after the last component.
8. Splices will not interfere with the sprocket feed holes.
MCR100 Series
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7
PACKAGE DIMENSIONS
TO−92 (TO−226)
CASE 29−11
ISSUE AM
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
BEYOND DIMENSION K MINIMUM.
R
A
P
J
L
B
K
G
H
SECTION X−X
C
V
D
N
N
XX
SEATING
PLANE DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.175 0.205 4.45 5.20
B0.170 0.210 4.32 5.33
C0.125 0.165 3.18 4.19
D0.016 0.021 0.407 0.533
G0.045 0.055 1.15 1.39
H0.095 0.105 2.42 2.66
J0.015 0.020 0.39 0.50
K0.500 --- 12.70 ---
L0.250 --- 6.35 ---
N0.080 0.105 2.04 2.66
P--- 0.100 --- 2.54
R0.115 --- 2.93 ---
V0.135 --- 3.43 ---
1
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. CONTOUR OF PACKAGE BEYOND
DIMENSION R IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P
AND BEYOND DIMENSION K MINIMUM.
RA
P
J
B
K
G
SECTION X−X
C
V
D
N
XX
SEATING
PLANE DIM MIN MAX
MILLIMETERS
A4.45 5.20
B4.32 5.33
C3.18 4.19
D0.40 0.54
G2.40 2.80
J0.39 0.50
K12.70 ---
N2.04 2.66
P1.50 4.00
R2.93 ---
V3.43 ---
1
T
STRAIGHT LEAD
BULK PACK
BENT LEAD
TAPE & REEL
AMMO PACK
STYLE 10:
PIN 1. CATHODE
2. GATE
3. ANODE
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
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PUBLICATION ORDERING INFORMATION
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5773−3850
MCR100/D
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: orderlit@onsemi.com
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
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