Document Number: 83666 For technical questions, contact: optocoupler.answers@vishay.com www.vishay.com
Rev. 2.0, 10-Dec-08 607
Optocoupler, Phototransistor Output,
High Reliability, 5300 VRMS
SFH610A, SFH6106
Vishay Semiconductors
DESCRIPTION
The SFH610A (DIP) and SFH6106 (SMD) feature a high
current transfer ratio, low coupling capacitance and high
isolation voltage. These couplers have a GaAs infrared diode
emitter, which is optically coupled to a silicon planar
phototransistor detector, and is incorporated in a plastic
DIP-4 or SMD package.
The coupling devices are designed for signal transmission
between two electrically separated circuits.
The couplers are end-stackable with 2.54 mm spacing.
Creepage and clearance distances of > 8.0 mm are achieved
with option 6. This version complies with IEC 60950
(DIN VDE 0805) for reinforced insulation up to an operation
voltage of 400 VRMS or DC. Specifications subject to change.
FEATURES
Good CTR linearity depending on forward
current
Isolation test voltage, 5300 VRMS
High collector emitter voltage, VCEO = 70 V
Low saturation voltage
Fast switching times
Low CTR degradation
Temperature stable
Low coupling capacitance
End stackable, 0.100" (2.54 mm) spacing
High common mode interference immunity
Lead (Pb)-free component
Component in accordance to RoHS 2002/95/EC and
WEEE 2002/96/EC
AGENCY APPROVALS
UL1577, file no. E52744 system code H or J, double
protection
DIN EN 60747-5-5 (VDE 0884) available with option 1
CSA 93751
BSI IEC 60950; IEC 60065
Note
For additional information on the available options refer to option information.
1
2
4
3
E
C
A
C
S
FH610A
i179056
E
C
A
C
1
2
4
3
SFH6106
ORDER INFORMATION
PART REMARKS
SFH610A-1 CTR 40 % to 80 %, DIP-4
SFH610A-2 CTR 63 % to 125 %, DIP-4
SFH610A-3 CTR 100 % to 200 %, DIP-4
SFH610A-4 CTR 160 % to 320 %, DIP-4
SFH610A-5 CTR 250 % to 500 %, DIP-4
SFH6106-1 CTR 40 % to 80 %, SMD-4
SFH6106-2 CTR 63 % to 125 %, SMD-4
SFH6106-3 CTR 100 % to 200 %, SMD-4
SFH6106-4 CTR 160 % to 320 %, SMD-4
SFH6106-5T CTR 250 % to 500 %, SMD-4, tape and reel
SFH610A-1X006 CTR 40 % to 80 %, DIP-4 400 mil
SFH610A-1X018T CTR 40 % to 80 %, SMD-4 400 mil, wide leadspread
SFH610A-2X006 CTR 63 % to 125 %, DIP-4 400 mil
SFH610A-3X006 CTR 100 % to 200 %, DIP-4 400 mil
SFH610A-3X007 CTR 100 % to 200 %, SMD-4
SFH610A-4X006 CTR 160 % to 320 %, DIP-4 400 mil
www.vishay.com For technical questions, contact: optocoupler.answers@vishay.com Document Number: 83666
608 Rev. 2.0, 10-Dec-08
SFH610A, SFH6106
Vishay Semiconductors Optocoupler, Phototransistor Output,
High Reliability, 5300 VRMS
Notes
(1) Tamb = 25 °C, unless otherwise specified.
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum
ratings for extended periods of the time can adversely affect reliability.
(2) Refer to reflow profile for soldering conditions for surface mounted devices (SMD). Refer to wave profile for soldering conditions for through
hole devices (DIP).
ABSOLUTE MAXIMUM RATINGS (1)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
INPUT
Reverse voltage VR6V
DC forward current IF60 mA
Surge forward current t 10 µs IFSM 2.5 A
Power dissipation Pdiss 100 mW
OUTPUT
Collector emitter voltage VCE 70 V
Emitter collector voltage VEC 7V
Collector current IC50 mA
tp 1.0 ms IC100 mA
Power dissipation Pdiss 150 mW
COUPLER
Isolation test voltage
between emitter and detector VISO 5300 VRMS
Creepage distance 7mm
Clearance distance 7mm
Insulation thickness between
emitter and detector 0.4 mm
Comparative tracking index per DIN
IEC112/VDE 0303 part 1 175
Isolation resistance VIO = 500 V, Tamb = 25 °C RIO 1012 Ω
VIO = 500 V, Tamb = 100 °C RIO 1011 Ω
Storage temperature range Tstg - 55 to + 150 °C
Ambient temperature range Tamb - 55 to + 100 °C
Soldering temperature (2) max. 10 s, dip soldering distance
to seating plane 1.5 mm Tsld 260 °C
ELECTRICAL CHARACTERISTICS
PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT
INPUT
Forward voltage IF = 60 mA VF1.25 1.65 V
Reverse current VR = 6 V IR0.01 10 µA
Capacitance VR = 0 V, f = 1 MHz CO13 pF
Thermal resistance Rthja 750 K/W
OUTPUT
Collector emitter capacitance VCE = 5 V, f = 1 MHz CCE 5.2 pF
Thermal resistance Rthja 500 K/W
Collector emitter leakage current VCE = 10 V
SFH610A-1 ICEO 250nA
SFH6106-1 ICEO 250nA
SFH610A-2 ICEO 250nA
SFH6106-2 ICEO 250nA
SFH610A-3 ICEO 5 100 nA
SFH6106-3 ICEO 5 100 nA
SFH610A-4 ICEO 5 100 nA
SFH6106-4 ICEO 5 100 nA
SFH610A-5 ICEO 5 100 nA
SFH6106-5T ICEO 5 100 nA
Document Number: 83666 For technical questions, contact: optocoupler.answers@vishay.com www.vishay.com
Rev. 2.0, 10-Dec-08 609
SFH610A, SFH6106
Optocoupler, Phototransistor Output,
High Reliability, 5300 VRMS
Vishay Semiconductors
Note
Tamb = 25 °C, unless otherwise specified.
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
COUPLER
Collector emitter saturation
voltage IF = 10 mA, IC = 2.5 mA VCEsat 0.25 0.4 V
Coupling capacitance f = 1 MHz CC0.4 pF
CURRENT TRANSFER RATIO
PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT
IC/IF
IF = 10 mA, VCE = 5.0 V
SFH610A-1 CTR 40 80 %
SFH6106-1 CTR 40 80 %
SFH610A-2 CTR 63 125 %
SFH6106-2 CTR 63 125 %
SFH610A-3 CTR 100 200 %
SFH6106-3 CTR 100 200 %
SFH610A-4 CTR 160 320 %
SFH6106-4 CTR 160 320 %
SFH610A-5 CTR 250 500 %
SFH6106-5T CTR 250 500 %
IF = 1 mA, VCE = 5 V
SFH610A-1 CTR 13 30 %
SFH6106-1 CTR 13 30 %
SFH610A-2 CTR 22 45 %
SFH6106-2 CTR 22 45 %
SFH610A-3 CTR 34 70 %
SFH6106-3 CTR 34 70 %
SFH610A-4 CTR 56 90 %
SFH6106-4 CTR 56 90 %
SWITCHING CHARACTERISTICS
PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT
NON-SATURATED
Current VCC = 5 V, RL = 75 ΩIF10 mA
Rise time VCC = 5 V, RL = 75 Ωtrs
Fall time VCC = 5 V, RL = 75 Ωtfs
Turn-on time VCC = 5 V, RL = 75 Ωton s
Turn-off time VCC = 5 V, RL = 75 Ωtoff 2.3 µs
Cut-off frequency VCC = 5 V FCO 250 kHz
SATURATED
Current
SFH610A-1 IF20 mA
SFH6106-1
SFH610A-2 IF10 mA
SFH6106-2
SFH610A-3 IF10 mA
SFH6106-3
SFH610A-4 IF5mA
SFH6106-4
ELECTRICAL CHARACTERISTICS
PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT
www.vishay.com For technical questions, contact: optocoupler.answers@vishay.com Document Number: 83666
610 Rev. 2.0, 10-Dec-08
SFH610A, SFH6106
Vishay Semiconductors Optocoupler, Phototransistor Output,
High Reliability, 5300 VRMS
Note
All values presented are typical values.
SATURATED
Rise time
SFH610A-1 trs
SFH6106-1
SFH610A-2 trs
SFH6106-2
SFH610A-3 trs
SFH6106-3
SFH610A-4 trs
SFH6106-4
Fall time
SFH610A-1 tf11 µs
SFH6106-1
SFH610A-2 tf14 µs
SFH6106-2
SFH610A-3 tf14 µs
SFH6106-3
SFH610A-4 tf15 µs
SFH6106-4
Turn-on time
SFH610A-1 ton s
SFH6106-1
SFH610A-2 ton 4.2 µs
SFH6106-2
SFH610A-3 ton 4.2 µs
SFH6106-3
SFH610A-4 ton s
SFH6106-4
Turn-off time
SFH610A-1 toff 18 µs
SFH6106-1
SFH610A-2 toff 23 µs
SFH6106-2
SFH610A-3 toff 23 µs
SFH6106-3
SFH610A-4 toff 25 µs
SFH6106-4
SWITCHING CHARACTERISTICS
PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT
Document Number: 83666 For technical questions, contact: optocoupler.answers@vishay.com www.vishay.com
Rev. 2.0, 10-Dec-08 611
SFH610A, SFH6106
Optocoupler, Phototransistor Output,
High Reliability, 5300 VRMS
Vishay Semiconductors
Note
As per IEC 60747-5-2, § 7.4.3.8.1, this optocoupler is suitable for "safe electrical insulation" only within the safety ratings. Compliance with the
safety ratings shall be ensured by means of protective circuits.
TYPICAL CHARACTERISTICS
Tamb = 25 °C, unless otherwise specified
Fig. 1 - Linear Operation (without Saturation)
Fig. 2 - Current Transfer Ratio (CTR) vs. Temperature
Fig. 3 - Switching Operation (with Saturation)
Fig. 4 - Output Characteristics (Typ.) Collector Current vs.
Collector Emitter Voltage
SAFETY AND INSULATION RATINGS
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Climatic classification
(according to IEC 68 part 1) 55/100/21
Comparative tracking index CTI 175 399
VIOTM 10000 V
VIORM 890 V
PSO 400 mW
ISI 275 mA
TSI 175 °C
Creepage distance standard DIP-4 7 mm
Clearance distance standard DIP-4 7 mm
Creepage distance 400 mil DIP-4 8 mm
Clearance distance 400 mil DIP-4 8 mm
Insulation thickness,
reinforced rated per IEC 60950 2.10.5.1 0.4 mm
isfh610a_01
R = 75 Ω
L
VCC =5V
IC
47 Ω
IF
%
103
5
102
101
- 25 7525050
5
TA (°C)
isfh610a_03
IF = 10 mA, VCC = 5.0 V
1
2
3
4
IC
IF
isfh610a_02
1. 0 k Ω
VCC =5V
47 Ω
IF
mA
30
10
20
0
015105V
I
c
V
CE
isfh610a_04
I
F
= 14 mA
I
F
= 12 mA
I
F
= 10 mA
I
F
= 6 mA
I
F
= 8 mA
I
F
= 4 mA
I
F
= 2 mAI
F
= 1 mA
www.vishay.com For technical questions, contact: optocoupler.answers@vishay.com Document Number: 83666
612 Rev. 2.0, 10-Dec-08
SFH610A, SFH6106
Vishay Semiconductors Optocoupler, Phototransistor Output,
High Reliability, 5300 VRMS
Fig. 5 - Diode Forward Voltage vs. Forward Current
Fig. 6 - Transistor Capacitance (Typ.) vs. Collector Emitter Voltage
Fig. 7 - Permissible Pulse Handling Capability Forward Current vs.
Pulse Width
Fig. 8 - Permissible Power Dissipation vs. Temperature
Fig. 9 - Permissible Diode Forward Current vs.
Ambient Temperature
1.2
V
1.1
1.0
0.9
10
-1
10
1
10
2
5 mA5510
0
V
F
I
F
isfh610a_05
VF = f (IF)
25 °C
50 °C
75 °C
0
5
10
15
20
pF
10-2 10-1 100101102
V
C
Ve
isfh610a_06
f = 1.0 MHz
CCE
mA
5
5
101
5
102
103
104
10-5 10-4 10-3 10-2 10-1 100101
s
IF
tp
isfh610a_07
tp
IF
T
T
D =
tp
D = 0
0.005
0.01
0.02 Pulse cycle
D = parameter
tp
IF
0.05
0.1
0.2
0.5
DC
mA
0
30
60
90
120
0 50 1007525 °C
I
F
T
A
isfh610a_08
Ptot = f (TA)
mW
0
50
100
150
200
0 50 1007525 °C
P
tot
T
A
isfh610a_09
Transistor
Diode
Document Number: 83666 For technical questions, contact: optocoupler.answers@vishay.com www.vishay.com
Rev. 2.0, 10-Dec-08 613
SFH610A, SFH6106
Optocoupler, Phototransistor Output,
High Reliability, 5300 VRMS
Vishay Semiconductors
PACKAGE DIMENSIONS in inches (millimeters)
0.029 (0.74)
0.095 (2.41)
0.048(1.22) 0.012 (0.30)
0.110 (2.79)
Pin 1 identification
0.296 (7.52)
i178027-1
0.255 (6.48)
0.268(6.81)
0.179 (4.55)
0.190 (4.83)
0.030 (0.76)
0.045 (1.14)
typ .
0.105 (2.67)
0.130 (3.30)
0.150 (3.81)
0.020 (0.51)
0.035 (0.89)
10 °
to 9°
0.052 (1.32)
0.008(0.20)
0.033 (0.84)
0.130 (3.30)
0.250 (6.35)
0.230 (5.84)
IS OM ethod A
0.312 (7.92)
i17802 9-2
0.255 (6.48)
0.268(6.81)
0.179 (4.55)
0.190 (4.83)
0.030 (0.76)
0.045 (1.14)
typ.
0.052 (1.32)
10 °
Lead coplanarity
0.004 (0.102) max. (’K’)
SMD
ISO methodA
0.100 (2.54) R 0.010 (0.25)
0.070 (1.78)
0.030 (0.76)
0.315 (8.00) mi n. 0.060 (1.52)
0.435 (11.05)
0.048(1.22) 0.105 (2.67)
0.095 (2.41)
0.033 (0.84)
0.029 (0.74)
0.150 (3.81)
0.130 (3.30)
0.0098(0.249)
0.004 (0.102)
0.012 (0.30)
0.008(0.20)
0.296 (7.52)
0.395 (10.03)
0.375 (9.52)
PIN 1 IDENTIFICATION
0.312 (7.92)
www.vishay.com For technical questions, contact: optocoupler.answers@vishay.com Document Number: 83666
614 Rev. 2.0, 10-Dec-08
SFH610A, SFH6106
Vishay Semiconductors Optocoupler, Phototransistor Output,
High Reliability, 5300 VRMS
0.014 (0.35)
0.010 (0.25)
0.400 (10.16)
0.430 (10.92)
0.307 (7.8)
0.291 (7.4)
0.407 (10.36)
0.391 (9.96)
Option 6
0.315 (8.0)
min.
0.300 (7.62)
typ.
0.180 (4.6)
0.160 (4.1)
0.331 (8.4)
min.
0.406 (10.3)
max.
0.028 (0.7)
Option 7
18487
0.300 (7.62)
typ.
0.150 (3.81)
0.130 (3.30)
0.472 (12.00)
max.
0.365 (9.27)
min.
0.020 (0.50)
0.000 (0.00)
Option 8
Document Number: 83666 For technical questions, contact: optocoupler.answers@vishay.com www.vishay.com
Rev. 2.0, 10-Dec-08 615
SFH610A, SFH6106
Optocoupler, Phototransistor Output,
High Reliability, 5300 VRMS
Vishay Semiconductors
OZONE DEPLETING SUBSTANCES POLICY STATEMENT
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with
respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone
depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use
within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in
the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively.
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency
(EPA) in the USA.
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do
not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application by the
customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall
indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any
claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Document Number: 91000 www.vishay.com
Revision: 18-Jul-08 1
Disclaimer
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Vishay
All product specifications and data are subject to change without notice.
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(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
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