S51E D MM 4146671 0003886 GTO MESEKG ~~ SEMIKRON INC SEMIKRON Rectifier Diodes ; VRSM Irav (sin. 180; Tease = ...) VrrRM V 4000 A (50 C) 6000 A (85C) 100 SKN 4000/01 - 200 SKN 4000/02 SKN 6000/02 400 SKN 4000/04 SKN 6000/04 600 SKN 4000/06 - Symbol | Conditions SKN 4000 SKN 6000 lrav Toase = 50C;DSC" 4000 A = 85C;pDsc") 6000 A . = 100C;Dsc" 2740 A 5400 A IFsm Ty = 25C 10 ms 60 kA Ty = 180C 5OkA it Ty = 25C 18-10A?s Ty =180C 12,5 -10As IR Ty = 25C; Vr = VRaM 4mA Ty =180C; VR = Varo 100 mA Ve Ty = 25C; Ip =14kA;max. 1,35") 13V7) Viro) Ty =180C 0,7V 0,7V rT Ty =180C 0,04 mQ 0,04 mQ Rihjc psc 0,030 C/W 0,012C/W ssc?) 0,060 C/W 0,024 C/W Ritch psc? 0,005 C/W 0,005 C/W - ssc 0,010C/W 0,010C/w Tw -40 ... +180 C Tetg -40 ... +150 C F SI units 24... 30 KN 24... 30 KN a US units 5400 ... 6750 Ibs. |5400 ... 6750 Ibs, w 129g 130 g Case E22 E35 1) 2) DSC = Double sided cooling; SSC = Single sided cooling For parallel connections selected devices are available on request SKN 4000 | -O1 23) SKN 6000 Features Capsule type metal-ceramic packages with precious metal pressure contacts Medium voltage, high current rectifier diodes with slim package for lowest thermal! resistance. Low power dissipation. Especially suited for water cooling. Forward selections for paralleling available Typical Applications Welding Electroplating _ by SEMIKRON B8-47SLE D MM 8136671 0003887 437 MESEKG - ~ SEMIKRON INC T-01~23 kW oO Fray o lea 1 2 3 kA 0 Tomb 50 700 150 5 kw Fav oO C 200 Fig. 2a Power dissipation vs. forward current and ambient temperature 7.6 - SKN 6000 - kW 5 2.5 Feav 9 Igay 1 2 3 4 5 kA 0 76 kW 25 Fray 50 100 150 Cc 200 Fig. 2b Power dissipation vs. forward current and ambient temperature kA hay 6 Tease 50 100 150 C: 200 Fig.3.a Rated forward current vs. case temperature 15 EPLtr iy SKN 6000 kA 2.5 | - trav %% Toaso 50 100 150 S200 Fig. 3b Rated forward current vs. case temperature B8-48 by SEMIKRONS1E D MM 4136671 0003688 773 MESEKG SEMIKRON 40 % kW SKN 4000 30 20 2th s 10? 10-2 io77 10 101 Fig. 5a Transient thermal impedance vs. time 0 tos t 20 i i-SKN 6000 cu 18 10 5 Zh 0 10-3 10-2 1071 40 jot s 102 Fig. 5c Transient thermal impedance vs. time 20 kA 4000 15 10 ip 0 oO -; 0,5 1 15 Vv 2 Fig. 6 a Forward characteristics T-01-23 C_ kW . i . SKN 4000 y thlh SSC " 50 25 Z, th | 0 to-3 10-2 4071 10 10! s 162 Fig. 5 b Transient thermal impedance vs. time 40 SKN 6000 CG. kW 30 20 th s 162 10-2 1071 109 107 Fig. 5d Transient thermal impedance vs. time 0 1o-3 20 i SKN 6000 15 10 ip %5 Vp 0.5 1 v 15 Fig. 6 b Forward characteristics by SEMIKRON B8-49SIE D MM 6136671 SEMIKRON INC tErovi IFSM 1.8 lIesm (kA} TyJ=25 C | T2180 C SKN 4000 60 50 SKN 6000 60 50 4.2 0.8 0.6 0.4 t ms 109 Fig. 7 Surge overload current vs. time 40 kA SKN 40007 *}.. A A ff. t 1 fo ig et r i DSC Tease: 50C ne ~-! 18. 4009 30 ED~ {2 -100% tonn-ts 20 lem 10 1 &D 3 5 10 30 50 % 100 Fig. 12 a Rated peak forward current vs. duty cycle 40 kA 3 SKN 6000 60% 36 30 25 te 20 fra e0=12..100% sp fgenety 'FM 15 4+ ED 3 10 30 50 % 100 Fig. 12 c Rated peak forward current vs. duty cycle B 8-50 0003869 BOT MMSEKG J-01-23 30 kar SKN 4000-,"1., i psc to0re "Y/\ V\ {* [\ ns t t t t 20 BD=72- 100% tonnirty le 1 ED 3 5 10 30 660 6% 100 Fig. 12 b Rated peak forward current vs. duty cycle 35 we SKN 6000- osc 100 *C 30 ED= 2.100% ap tonnety 25 20 lem 15 1 ED 3 10 Fig. 12 d Rated peak forward current vs. duty cycle 30 50 % 100 by SEMIKRONSUE ) MM 8136672 0003890 321 MBSEKG SEWIKRON INC SEMIKRON ' J-01-23 25 kA| 2eSKN 4000 * kA| 2SSKN 4000 * DSC 100C. DSC Tease= 50C ns 20 3 ats] te 3 ED=; 100% sp te=nets 6 15 *l, eke, . lg No_o lg Noo 54 ED 3 10 30 50 % 100 aa ED 3 5 10 30 50 % 100 Fig. 13 a Rated direct output current vs. duty cycle Fig. 13 b Rated direct current vs. duty cycle 26 26 ka 2SKN 6000 bsc 100 kA ~3.2*SKN 6000 50C n t = 1 20 3 ED=42_-100% Sp to=n-ts 20 ep=12_.190% Sp te=n-ts ED 3 5 10 30 50 % 100 1 ED 3 10 30 50 % 100 Fig. 13 Rated direct output current vs. duty cycle Fig. 13d Rated direct current vs. duty cycle by SEMIKRON B8-51