1N5817 – 1N5819 1 of 4 © 2006 Won-Top Electronics
Pb
1N5817 – 1N5819
1.0A SCHOTTKY BARRIER DIODE
Features
! Schottky Barrier Chip
! Guard Ring Die Construction for
Transient Protection
! High Current Capability A B A
! Low Power Loss, High Eff icienc y
! High Surge Current Capability
! For Use in Low Voltage, High Frequency
Inverters, Free Wheeling, and Polarity
Protection Applications C
D
Mechanical Data
! Case: DO-41, Molded Plastic
! Terminals: Plated Leads Solderable per
MIL-STD- 202, Met hod 208
! Polarity: Cathode Band
! Weight: 0.34 grams (approx.)
! Mounting Position: Any
! Marking: Type Number
! Lead Free: For RoHS / Lead Free Version,
Add “-LF” Suffix to Part Number, See Page 4
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified
Single Phase, half wave, 60Hz, resistive or inductive load.
For capaciti ve load, derate current by 20%.
Characteristic Symbol 1N5817 1N5818 1N5819 Unit
Peak Repetit i ve Revers e Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR20 30 40 V
RMS Reverse Voltage VR(RMS) 14 21 28 V
Average Rectified Output Current (Note 1) @TL = 90°C IO1.0 A
Non-Repetiti ve P eak Forward Surge Current 8.3ms
Single half sine-wave superimposed on rated load
(JEDEC Method) IFSM 25 A
Forward Voltage @IF = 1.0A
@I
F = 3.0A VFM 0.450
0.750 0.550
0.875 0.60
0.90 V
Peak Reverse Current @T
A = 25°C
At Rated DC Blocking Voltage @TA = 100°C IRM 1.0
10 mA
Typic al Junction Capacitance (Note 2) Cj110 pF
Typical Therm al Res istance Junction to Lead (Note 1) RJL 15 °C/W
Operating and Storage Temperature Range Tj, TSTG -65 to +150 °C
Note: 1. Valid provided that leads are kept at ambient t emperature at a distance of 9.5mm from the case.
2. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.
WTE
POWER SEMICONDUCTORS
DO-41
Dim Min Max
A25.4 —
B4.06 5.21
C0.71 0.864
D2.00 2.72
All Dimensions in mm