GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter Lead (Pb) Free Product - RoHS Compliant LD 242 Wesentliche Merkmale Features * Hergestellt im Schmelzepitaxieverfahren * Kathode galvanisch mit dem Gehauseboden verbunden * Hohe Zuverlassigkeit * Groer Offnungskegel * Gehausegleich mit BP 103, BPX 63, SFH 464, SFH 483 * Anwendungsklasse nach DIN 40 040 GQC * * * * * Anwendungen Applications * Lichtschranken fur Gleich- und Wechsellichtbetrieb * Sensorik * Lichtgitter * Photointerrupters * Sensor technology * Light-grille barrier Fabricated in a liquid phase epitaxy process Cathode is electrically connected to the case High reliability Wide beam Same package as BP 103, BPX 63, SFH 464, SFH 483 * DIN humidity caregory in acc. with DIN 40 040 GQG Typ Type Bestellnummer Ordering Code Strahlstarkegruppierung 1) (IF = 100mA, tp = 20 ms) Radiant Intensity Grouping 1) Ie (mW/sr) LD 242 Q62703Q0151 4-8 LD 242-2/3 Q62703Q4749 > 6.3 LD 242 E7800 Q62703Q3509 1 - 3.2 1) gemessen bei einem Raumwinkel = 0.01 sr measured at a solid angle of = 0.01 sr 2005-02-22 1 LD 242 Grenzwerte Maximum Ratings Bezeichnung Parameter Symbol Symbol Wert Value Einheit Unit Betriebs- und Lagertemperatur Operating and storage temperature range Top; Tstg - 40 ... + 80 C Sperrspannung Reverse voltage VR 5 V Durchlassstrom, TC = 25 C Forward current IF 300 mA Stostrom, 10 s, D = 0 Surge current IFSM 3 A Verlustleistung, TC = 25 C Power dissipation Ptot 470 mW Warmewiderstand Thermal resistance RthJA RthJC 450 160 K/W K/W Bezeichnung Parameter Symbol Symbol Wert Value Einheit Unit Wellenlange der Strahlung Wavelength at peak emission IF = 100 mA, tp = 20 ms peak 950 nm Spektrale Bandbreite bei 50% von Imax Spectral bandwidth at 50% of Imax IF = 100 m A, tp = 20 ms 55 nm Abstrahlwinkel Half angle 40 Grad deg. Aktive Chipflache Active chip area A 0.25 mm2 Abmessungen der aktiven Chipflache Dimension of the active chip area LxB LxW 0.5 x 0.5 mm Abstand Chipoberflache bis Linsenscheitel Distance chip surface to lens top H 0.3 ... 0.7 mm Kennwerte (TA = 25 C) Characteristics 2005-02-22 2 LD 242 Kennwerte (TA = 25 C) Characteristics (cont'd) Bezeichnung Parameter Symbol Symbol Wert Value Einheit Unit Schaltzeiten, Ie von 10% auf 90% und von 90% auf 10%, bei IF = 100 mA, RL = 50 Switching times, Ie from 10% to 90% and from 90% to 10%, IF = 100 mA, RL = 50 tr, tf 1 s Kapazitat Capacitance VR = 0 V Co 40 pF VF VF 1.3 ( 1.5) 1.9 ( 2.5) V V Sperrstrom, VR = 5 V Reverse current IR 0.01 ( 1) A Gesamtstrahlungsfluss Total radiant flux IF = 100 mA, tp = 20 ms e 16 mW Temperaturkoeffizient von Ie bzw. e, IF = 100 mA Temperature coefficient of Ie or e, IF = 100 mA TCI - 0.55 %/K Temperaturkoeffizient von VF, IF = 100 mA Temperature coefficient of VF, IF = 100 mA TCV - 1.5 mV/K Temperaturkoeffizient von peak, IF = 100 mA Temperature coefficient of peak, IF = 100 mA TC 0.3 nm/K Durchlassspannung Forward voltage IF = 100 mA IF = 1 A, tp = 100 s 2005-02-22 3 LD 242 Gruppierung der Strahlstarke Ie in Achsrichtung gemessen bei einem Raumwinkel = 0.01 sr Grouping of Radiant Intensity Ie in Axial Direction measured at a solid angle of = 0.01 sr Bezeichnung Parameter Strahlstarke Radiant intensity IF = 100 mA, tp = 20 ms IF = 1 A, tp = 100 s Symbol Ie Ie typ. Werte Values Einheit Unit -2 -3 78001) 4...8 50 > 6.3 75 1 ... 3.2 - mW/sr mW/sr 1) Die Messung der Strahlstarke und des Halbwinkels erfolgt mit einer Lochblende vor dem Bauteil (Durchmesser der Lochblende: 1,1 mm; Abstand Lochblende zu Gehauseruckseite: 4,0 mm). Dadurch wird sichergestellt, dass bei der Strahlstarkemessung nur diejenige Strahlung in Achsrichtung bewertet wird, die direkt von der Chipoberflache austritt. Von der Bodenplatte reflektierte Strahlung (vagabundierende Strahlung) wird dagegen nicht bewertet. Diese Reflexionen sind besonders bei Abbildungen der Chipoberflache uber Zusatzoptiken storend (z.B. Lichtschranken groer Reichweite). In der Anwendung werden im allgemeinen diese Reflexionen ebenfalls durch Blenden unterdruckt. Durch dieses der Anwendung entsprechende Messverfahren ergibt sich fur die Anwender eine besser verwertbare Groe. Diese Lochblendenmessung ist gekennzeichnet durch den Eintrag E 7800", der an die Typenbezeichnung angehangt ist. 1) An aperture is used in front of the component for measurement of the radiant intensity and the half angle (diameter of the aperture: 1.1 mm; distance of aperture to case back side: 4.0 mm). This ensures that solely the radiation in axial direction emitting directly from the chip surface will be evaluated during measurement of the radiant intensity. Radiation reflected by the bottom plate (stray radiation) will not be evaluated. These reflections impair the projection of the chip surface by additional optics (e.g. long-range light reflection switches). In respect of the application of the component, these reflections are generally suppressed by apertures as well. This measuring procedure corresponding with the application provides more useful values. This aperture measurement is denoted by "E 7800" added to the type designation. 2005-02-22 4 LD 242 Relative Spectral Emission Irel = f () Single pulse, tp = 20 s OHR01938 100 e % rel Ie = f (IF ) Ie 100 mA Radiant Intensity OHR01037 10 2 Max. Permissible Forward Current IF = f (T A ) OHR00971 300 F mA e (100 mA) 250 80 R thJL = 160 K/W 200 10 1 60 150 R thJA = 450 K/W 40 10 0 100 20 50 0 880 920 960 1000 nm 10 -1 10 -2 1060 Forward Current IF = f (VE) F 10 -1 10 1 A F Permissible Pulse Handling Capability IF = f (), TC = 25 C, duty cycle D = parameter OHR01040 10 1 A F OHR01937 10 4 mA tP D= 5 typ. 10 0 10 0 tP T F T D= 0.005 0.01 0.02 0.05 0.1 max. 10 3 0.2 0.5 5 10 -1 DC 10 -2 1 1.5 2 2.5 3 3.5 10 2 10 -5 4 V 4.5 VF 10 -4 10 -3 10 -2 s Radiation Characteristics Irel = f () 40 30 20 10 0 OHR01877 1.0 50 0.8 60 0.6 70 0.4 0.2 80 0 90 100 1.0 2005-02-22 0.8 0.6 0.4 0 20 40 60 80 100 5 120 10 0 0 0 20 40 60 80 C 100 T A, T L LD 242 0.9 1.1 o4.1 (0.161) 1.1 .03 (0 3) .04 5) (0 1 0.9 2.54 (0.100) spacing o0.45 (0.018) Chip position o4.3 (0.169) 2.7 (0.106) (0 . (0 043 .03 ) 5) Mazeichnung Package Outlines 2 14.5 (0.571) 3.6 (0.142) 12.5 (0.492) 3.0 (0.118) o5.5 (0.217) o5.2 (0.205) GETY6625 Mae werden wie folgt angegeben: mm (inch) / Dimensions are specified as follows: mm (inch). Gehause Package 18 A3 DIN 41876 (TO-18), klares Epoxy-Gieharz 18 A3 DIN 41876 (TO-18), transparent epoxy resin Anschlussbelegung pin configuration 1 = Anode/ anode 2 = Kathode/ cathode 2005-02-22 6 LD 242 Lotbedingungen Soldering Conditions Wellenloten (TTW) TTW Soldering (nach CECC 00802) (acc. to CECC 00802) OHLY0598 300 C T 10 s 250 Normalkurve standard curve 235 C ... 260 C Grenzkurven limit curves 2. Welle 2. wave 200 1. Welle 1. wave 150 ca 200 K/s 2 K/s 5 K/s 100 C ... 130 C 100 2 K/s 50 Zwangskuhlung forced cooling 0 0 50 100 150 200 s 250 t Published by OSRAM Opto Semiconductors GmbH Wernerwerkstrasse 2, D-93049 Regensburg www.osram-os.com (c) All Rights Reserved. The information describes the type of component and shall not be considered as assured characteristics. Terms of delivery and rights to change design reserved. Due to technical requirements components may contain dangerous substances. For information on the types in question please contact our Sales Organization. Packing Please use the recycling operators known to you. We can also help you - get in touch with your nearest sales office. By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs incurred. Components used in life-support devices or systems must be expressly authorized for such purpose! Critical components 1 , may only be used in life-support devices or systems 2 with the express written approval of OSRAM OS. 1 A critical component is a component usedin a life-support device or system whose failure can reasonably be expected to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system. 2 Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain and sustain human life. If they fail, it is reasonable to assume that the health of the user may be endangered. 2005-02-22 7